Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFG10W/X UHF power transistor Product specification 1995 Sep 22 NXP Semiconductors Product specification UHF power transistor BFG10W/X FEATURES DESCRIPTION • High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin
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BFG10W/X
OT343N
MBK523
R77/01/pp11
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BC548 TRANSISTOR REPLACEMENT
Abstract: transistor BC548 Philips Capacitor RT5880 BC548 transistor bc548 bp HE bc548 BC548 transistor bc548 equivalent MBG431
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG10W/X UHF power transistor Product specification 1995 Sep 22 NXP Semiconductors Product specification UHF power transistor BFG10W/X FEATURES DESCRIPTION • High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin
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BFG10W/X
OT343N
MBK523
R77/01/pp11
BC548 TRANSISTOR REPLACEMENT
transistor BC548
Philips Capacitor
RT5880
BC548
transistor bc548 bp
HE bc548
BC548 transistor
bc548 equivalent
MBG431
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C5 MARKING TRANSISTOR
Abstract: blf177nxp BLF177 Philips 2222-030 BLF177C
Text: BLF177 HF/VHF power MOS transistor Rev. 06 — 24 January 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact
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BLF177
El0041217
BLF177
C5 MARKING TRANSISTOR
blf177nxp
Philips 2222-030
BLF177C
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DB16
Abstract: 34S2
Text: BLF1043 UHF power LDMOS transistor Rev. 8 — 6 May 2013 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from HF to 1000 MHz. Table 1. Typical performance RF performance at Th = 25 C in a common source test circuit.
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BLF1043
DB16
34S2
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BLF3G22-30
Abstract: C3225X7R1H155M TEKELEC
Text: BLF3G22-30 UHF power LDMOS transistor Rev. 01 — 21 June 2007 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz Table 1. Typical class-AB RF performance
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BLF3G22-30
BLF3G22-30
C3225X7R1H155M
TEKELEC
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BLF177,112
Abstract: transistor list sot121B package snw-eq-608 MBK-408 TRIMMER cap no-2222 809 07015 NXPBLF177 BLF177C
Text: BLF177 HF/VHF power MOS transistor Rev. 06 — 24 January 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact
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BLF177
BLF177
771-BLF177
BLF177,112
transistor list
sot121B package
snw-eq-608
MBK-408
TRIMMER cap no-2222 809 07015
NXPBLF177
BLF177C
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Untitled
Abstract: No abstract text available
Text: BLF177 HF/VHF power MOS transistor Rev. 06 — 24 January 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact
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BLF177
BLF177
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ph98
Abstract: 597 smd transistor smd code HF transistor 2222-581 ACPR300 ACPR600 ACPR900 BLF3G21-30 PH98072 ph-98
Text: BLF3G21-30 UHF power LDMOS transistor Rev. 01 — 14 February 2007 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz. Table 1. Typical class-AB RF performance
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BLF3G21-30
ACPR600
1920ions
BLF3G21-30
ph98
597 smd transistor
smd code HF transistor
2222-581
ACPR300
ACPR600
ACPR900
PH98072
ph-98
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NF041
Abstract: BFU730F
Text: AN11006 Single stage 2.3_2.7GHz LNA with BFU730F Rev 3 — 20 November 2012 Application note Info Content Keywords BFU730F, LNA, 2.3-2.7 GHz, WiMAX, WLAN, ISM, LTE, High linearity. Abstract The document provides circuit, layout, BOM and performance information
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AN11006
BFU730F
BFU730F,
BFU730F
OM7690/BFU730F
NF041
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MGM219
Abstract: 9335 895 BC817 BFG21W DCS1800 MGM224
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BFG21W UHF power transistor Product specification Supersedes data of 1997 Nov 21 1998 Jul 06 NXP Semiconductors Product specification UHF power transistor BFG21W FEATURES PINNING • High power gain PIN High efficiency
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M3D124
BFG21W
DCS1800,
R77/03/pp11
MGM219
9335 895
BC817
BFG21W
DCS1800
MGM224
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SSB transmitter
Abstract: enamelled copper wire tables HF SSB APPLICATIONS 100b choke 4312 020 36640 ferroxcube wideband hf choke RF transmitter nxp 7540 Group mos transistor Q 371 Transistor
Text: BLF145 HF power MOS transistor Rev. 04 — 5 January 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact
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BLF145
BLF145
SSB transmitter
enamelled copper wire tables
HF SSB APPLICATIONS
100b choke
4312 020 36640
ferroxcube wideband hf choke
RF transmitter nxp
7540 Group
mos transistor
Q 371 Transistor
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burglar alarm system abstract
Abstract: AN10716 ic software program pcf8583 VARTA 3/v150h TZB04 PCF8563A UM10301 supercapacitor alternative to battery varta VARTA 3/V PCF8593
Text: UM10301 User Manual for NXP Real Time Clocks PCF85x3, PCA8565 and PCF2123, PCA2125 Rev. 01 — 23 December 2008 User manual Document information Info Content Keywords PCF8563, PCF8573, PCF8583, PCF8593, PCA8565, PCF2123, PCA2125, PCF2120, RTC, real time clock, timekeeping, crystal,
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UM10301
PCF85x3,
PCA8565
PCF2123,
PCA2125
PCF8563,
PCF8573,
PCF8583,
PCF8593,
PCA8565,
burglar alarm system abstract
AN10716
ic software program pcf8583
VARTA 3/v150h
TZB04
PCF8563A
UM10301
supercapacitor alternative to battery varta
VARTA 3/V
PCF8593
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A17200
Abstract: No abstract text available
Text: BLF145 HF power MOS transistor Rev. 04 — 5 January 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact
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BLF145
BLF145
A17200
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT M3D124 BFG21W UHF power transistor Product specification Supersedes data of 1997 Nov 21 1998 Jul 06 NXP Semiconductors Product specification UHF power transistor BFG21W FEATURES PINNING • High power gain PIN High efficiency
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M3D124
BFG21W
DCS1800,
R77/03/pp11
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Untitled
Abstract: No abstract text available
Text: BFG10; BFG10/X NPN 2 GHz RF power transistor Rev. 05 — 22 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact
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BFG10;
BFG10/X
BFG10X
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BLF147
Abstract: data sheet for BLF147
Text: BLF147 VHF power MOS transistor Rev. 06 — 5 December 2006 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact
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BLF147
BLF147
data sheet for BLF147
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Untitled
Abstract: No abstract text available
Text: BLF147 VHF power MOS transistor Rev. 06 — 5 December 2006 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact
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BLF147
Ele61108
BLF147
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BD228
Abstract: BFG10 transistor K 2937
Text: BFG10; BFG10/X NPN 2 GHz RF power transistor Rev. 05 — 22 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact
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BFG10;
BFG10/X
BFG10X
BD228
BFG10
transistor K 2937
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BLF147
Abstract: transistor C8 4312 020 36642
Text: BLF147 VHF power MOS transistor Rev. 05 — 8 November 2006 Product data sheet 1. Product profile 1.1 General description 150 W enhancement mode vertical D-MOS power transistor for HF/VHF applications. Table 1. Typical performance Typical RF performance at Th = 25 °C in a common-source test circuit.[1]
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BLF147
BLF147
transistor C8
4312 020 36642
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BFG198
Abstract: microstripline
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG198 NPN 8 GHz wideband transistor Product specification 1995 Sep 12 NXP Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended
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BFG198
OT223
MSB002
OT223.
R77/03/pp14
BFG198
microstripline
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFG198 NPN 8 GHz wideband transistor Product specification 1995 Sep 12 NXP Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended
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BFG198
OT223
MSB002
OT223.
R77/03/pp14
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BFG480W
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT M3D124 BFG480W NPN wideband transistor Product specification Supersedes data of 1998 Jul 09 1998 Oct 21 NXP Semiconductors Product specification NPN wideband transistor BFG480W FEATURES PINNING • High power gain PIN DESCRIPTION
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M3D124
BFG480W
MSB842
R77/03/pp16
BFG480W
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BFG480W
Abstract: 1184 transistor analog transistor B 1184
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BFG480W NPN wideband transistor Product specification Supersedes data of 1998 Jul 09 1998 Oct 21 NXP Semiconductors Product specification NPN wideband transistor BFG480W FEATURES PINNING • High power gain PIN DESCRIPTION
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M3D124
BFG480W
MSB842
R77/03/pp16
BFG480W
1184 transistor analog
transistor B 1184
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AN10897
Abstract: ES-3U5T-1B257-AA basics of wiring harness BV 3145 crystal washing machine service manual AA Class NXP antenna design guide emc design prtr5v0 EMC Guide for Printed Circuit Board 2002 Ford BAV99
Text: AN10897 A guide to designing for ESD and EMC Rev. 02 — 19 January 2010 Application note Document information Info Content Keywords ESD, EMC, PCB design Abstract An introductory approach to designing for ESD. Understanding the ESD pulse, how passive components react over frequency, and PCB layout
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AN10897
10e-9
0A/10e-9)
AN10897
ES-3U5T-1B257-AA
basics of wiring harness
BV 3145
crystal washing machine service manual AA Class
NXP antenna design guide
emc design
prtr5v0
EMC Guide for Printed Circuit Board 2002 Ford
BAV99
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