NX5501EH Search Results

NX5501EH Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NX5501EH		NEC	1550 nm InGaAsP MQW FP laser diode for FTTH application.		Original	PDF
NX5501EH		NEC	1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE		Original	PDF
NX5501EH-AZ		California Eastern Laboratories	NECs 1550 nm InGaAsP MQW-FP LASER DIODE IN CAN PACKAGE FOR FTTH APPLICATION		Original	PDF

NX5501EH Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
NX5501EH Abstract: No abstract text available Text: NEC'S 1550 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FTTH APPLICATION NX5501EH FEATURES DESCRIPTION • OPTICAL OUTPUT POWER PO = 5.0 mW NEC's NX5501EH is a 1550 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser Diode with InGaAsP monitor	Original	PDF	NX5501EH NX5501EH
NX5306 Abstract: NX5307 NX5501EH NX6306 NX6307 NX6504 STM-16 Text: PRELIMINARY DATA SHEET LASER DIODE NX5501EH 1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5501EH is a 1 550 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. This device is ideal for fiber to the home application.	Original	PDF	NX5501EH NX5501EH NX5306 NX5307 NX6306 NX6307 NX6504 STM-16
2SK2500 Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861 Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose	Original	PDF
NX5501 Abstract: No abstract text available Text: NEC's 1550 nm InGaAsP MQW-FP LASER DIODE IN CAN PACKAGE FOR FTTH APPLICATION NX5501 Series FEATURES • OPTICAL OUTPUT POWER: PO = 5.0 mW • LOW THRESHOLD CURRENT: Ith = 8 mA • DIFFERENTIAL EFFICENCY: ηD = 0.3 W/A • WIDE OPERATING TEMPERATURE RANGE TC = -40 to +85°C	Original	PDF	NX5501
NX5501 Abstract: NX5501EH NX5501EK PX10160E Text: DATA SHEET LASER DIODE NX5501 Series 1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5501 Series is a 1 550 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. APPLICATION • FTTH (Fiber To The Home)	Original	PDF	NX5501 NX5501EH NX5501EK PX10160E
Untitled Abstract: No abstract text available Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF
NX5501 Abstract: NX5501EH NX5501EH-AZ NX5501EK NX5501EK-AZ Text: NEC's 1550 nm InGaAsP MQW-FP LASER DIODE IN CAN PACKAGE FOR FTTH APPLICATION NX5501 Series FEATURES • OPTICAL OUTPUT POWER: PO = 5.0 mW • LOW THRESHOLD CURRENT: Ith = 8 mA • DIFFERENTIAL EFFICENCY: ηD = 0.3 W/A • WIDE OPERATING TEMPERATURE RANGE TC = -40 to +85°C	Original	PDF	NX5501 NX5501 NX5501EH NX5501EH-AZ NX5501EK NX5501EK-AZ
Untitled Abstract: No abstract text available Text: DATA SHEET LASER DIODE NX5307 Series 1 310 nm FOR INTRA-OFFICE 2.5 Gb/s InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5307 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diodes with InGaAs monitor PIN-PD. These devices are ideal for Synchronous Digital Hierarchy (SDH) system, intra-office	Original	PDF	NX5307 STM-16
STM 125 Abstract: No abstract text available Text: DATA SHEET LASER DIODE NX5306 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5306 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diodes with InGaAs monitor PIN-PD. These devices are ideal for Gigabit Ethernet and Synchronous Digital Hierarchy	Original	PDF	NX5306 STM 125