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    NVTFS5820NL Search Results

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    NVTFS5820NL Price and Stock

    onsemi NVTFS5820NLTWG

    MOSFET N-CH 60V 11A 8WDFN
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    DigiKey NVTFS5820NLTWG Reel
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    RS NVTFS5820NLTWG Bulk 20
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    Rochester Electronics NVTFS5820NLTWG 1
    • 1 $0.5444
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    onsemi NVTFS5820NLTAG

    MOSFET N-CH 60V 11A 8WDFN
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    Bristol Electronics NVTFS5820NLTAG 509
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    onsemi NVTFS5820NLWFTWG

    MOSFET N-CH 60V 11A 8WDFN
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    onsemi NVTFS5820NLWFTAG

    MOSFET N-CH 60V 11A 8WDFN
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    Rochester Electronics LLC NVTFS5820NLWFTWG

    POWER FIELD-EFFECT TRANSISTOR, 60V, 0.0115OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
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    Quest Components NVTFS5820NLWFTWG 199
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    NVTFS5820NL Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NVTFS5820NLTAG On Semiconductor NVTFS5820 - TRANSISTOR POWER, FET, FET General Purpose Power Original PDF
    NVTFS5820NLTWG On Semiconductor NVTFS5820 - TRANSISTOR POWER, FET, FET General Purpose Power Original PDF
    NVTFS5820NLWFTAG On Semiconductor NVTFS5820 - Power MOSFET 60V 29A 11.5 mOhm Single N-Channel u8FL Original PDF
    NVTFS5820NLWFTWG On Semiconductor NVTFS5820 - Power MOSFET 60V 29A 11.5 mOhm Single N-Channel u8FL Original PDF

    NVTFS5820NL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: NVTFS5820NL Power MOSFET 60 V, 11.5 mW, Single N−Channel, m8FL Features • • • • • • Small Footprint 3.3x3.3 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVTFS5820NLWF − Wettable Flanks Product


    Original     		PDF NVTFS5820NL NVTFS5820NLWF NVTFS5820NL/D

    NVTFS5820NL

    Abstract: No abstract text available
    Text: NVTFS5820NL Power MOSFET 60 V, 11.5 mW, Single N−Channel, m8FL Features • • • • • Small Footprint 3.3x3.3 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified These are Pb−Free Devices*


    Original     		PDF NVTFS5820NL AEC-Q101 NVTFS5820NL/D

    WDFN8

    Abstract: No abstract text available
    Text: NVTFS5820NL Product Preview Power MOSFET 60 V, 11.5 mW, Single N−Channel, m8FL Features • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified


    Original     		PDF NVTFS5820NL AEC-Q101 60cable NVTFS5820NL/D WDFN8

    Untitled

    Abstract: No abstract text available
    Text: NVTFS5820NL Power MOSFET 60 V, 11.5 mW, Single N−Channel, m8FL Features • • • • • Small Footprint 3.3x3.3 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified These are Pb−Free Devices*


    Original     		PDF NVTFS5820NL NVTFS5820NL/D

    20lw

    Abstract: No abstract text available
    Text: NVTFS5820NL Power MOSFET 60 V, 11.5 mW, Single N−Channel, m8FL Features • • • • • • Small Footprint 3.3x3.3 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVTFS5820NLWF − Wettable Flanks Product


    Original     		PDF NVTFS5820NL NVTFS5820NLWF AEC-Q101 NVTFS5820NL/D 20lw

    Untitled

    Abstract: No abstract text available
    Text: NVTFS5820NL Power MOSFET 60 V, 11.5 mW, Single N−Channel, m8FL Features • • • • • Small Footprint 3.3x3.3 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified These are Pb−Free Devices*


    Original     		PDF NVTFS5820NL AEC-Q101 NVTFS5820NL/D

    25c05

    Abstract: No abstract text available
    Text: NVTFS5820NL Power MOSFET 60 V, 11.5 mW, Single N−Channel, m8FL Features • • • • • Small Footprint 3.3x3.3 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified These are Pb−Free Devices*


    Original     		PDF NVTFS5820NL AEC-Q101 NVTFS5820NL/D 25c05

    Untitled

    Abstract: No abstract text available
    Text: Bill of Materials for the NCV898031SEPGEVB Evaluation Board Designator Quantity Description Value Tolerance Footprint Manufacturer Manufacturer Part Number C1, C11, C13 C2 C3 C4 C5 C6, C10 C7 C8 C9 C12 D1 D2, D3 L1, L2 Q1 R1 R2 R3 R4 R5 R6 R7 R8, R10 R9 TP1, 3, 4, 7, 8, 14,


    Original     		PDF NCV898031SEPGEVB 6800PF 680PF 100PF 120PF 1000/PKG K24C/M NCV898031D1R2G

    2N6284 inverter schematic diagram

    Abstract: NTD18N06 MKP9V160 sine wave inverter tl494 circuit diagram ECL IC NAND adp3121 DARLINGTON TRANSISTOR ARRAY ezairo MC74HC4538 TIP142 6403 F
    Text: ON Semiconductor Master Components Selector Guide AC−DC Controllers and Regulators; Amplifiers and Comparators; Analog Switches; Bipolar Transistors; Clock and Data Distribution; Clock Generation; Custom; DC−DC Controllers, Converters, and Regulators; Digital


    Original     		PDF SG388/D 2N6284 inverter schematic diagram NTD18N06 MKP9V160 sine wave inverter tl494 circuit diagram ECL IC NAND adp3121 DARLINGTON TRANSISTOR ARRAY ezairo MC74HC4538 TIP142 6403 F