NPN TRANSISTOR DC 558 Search Results

NPN TRANSISTOR DC 558 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
MX0912B251Y	Rochester Electronics LLC	MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die)
CA3083Z-G	Rochester Electronics LLC	CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY
CA3046	Rochester Electronics LLC	RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN
ISL73096EHVF	Renesas Electronics Corporation	Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays

NPN TRANSISTOR DC 558 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2N4922 Abstract: BU108 2SB655 BD390 MJ11021 2sb557 BDX54 2n6107 MOTOROLA 2SC1943 MJE2482 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV23 SWITCHMODE Series NPN Silicon Power Transistor 30 AMPERES NPN SILICON POWER METAL TRANSISTOR 325 VOLTS 250 WATTS . . . designed for high current, high speed, high power applications. • High DC current gain: HFE min. = 15 at IC = 8 A	Original	PDF	BUV23 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2N4922 BU108 2SB655 BD390 MJ11021 2sb557 BDX54 2n6107 MOTOROLA 2SC1943 MJE2482
BU108 Abstract: transistor Bc 574 2n6107 MOTOROLA 2SC1943 MJ3055 to220 2SC1419 BU326 BU100 MJ*15033 2N6277 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV21 SWITCHMODE Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min. = 20 at IC = 12 A	Original	PDF	BUV21 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 transistor Bc 574 2n6107 MOTOROLA 2SC1943 MJ3055 to220 2SC1419 BU326 BU100 MJ*15033 2N6277
TIP34C equivalent Abstract: BU108 TRANSISTOR BC 384 5D2 6 BUV11 equivalent BDX54 2N3025 equivalent BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV11 SWITCHMODE Series NPN Silicon Power Transistor 20 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 150 WATTS . . . designed for high current, high speed, high power applications. • High DC current gain; hFE min. = 20 at IC = 6 A	Original	PDF	BUV11 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 TIP34C equivalent BU108 TRANSISTOR BC 384 5D2 6 BUV11 equivalent BDX54 2N3025 equivalent BU326 BU100
BU108 Abstract: 2SC194 transistor Bc 574 2SC1419 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV20 SWITCHMODE Series NPN Silicon Power Transistor 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min = 20 at IC = 25 A	Original	PDF	BUV20 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 2SC194 transistor Bc 574 2SC1419 BU326 BU100
BU108 Abstract: ir411 transistor BC 247 2N592 MJE2482 2SD675 2SC1419 BU326 BU100 BUV22 equivalent Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV22 SWITCHMODE Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 250 VOLTS 250 WATTS . . . designed for high current, high speed, high power applications. • High DC current gain: HFE min. = 20 at IC = 10 A	Original	PDF	BUV22 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 ir411 transistor BC 247 2N592 MJE2482 2SD675 2SC1419 BU326 BU100 BUV22 equivalent
BU108 Abstract: BDW94 DTS801 MJE2482 2SC1419 BU326 BU100 2N3055/MJ802 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ802 High-Power NPN Silicon Transistor 30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS . . . for use as an output device in complementary audio amplifiers to 100–Watts music power per channel. • High DC Current Gain — hFE = 25–100 @ IC = 7.5 A	Original	PDF	MJ802 MJ4502 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C BU108 BDW94 DTS801 MJE2482 2SC1419 BU326 BU100 2N3055/MJ802
TRANSISTOR BC 208 Abstract: 2N3055 BU108 Mje350 2SB527 BDX54 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE3439 NPN Silicon High-Voltage Power Transistors 0.3 AMPERE POWER TRANSISTOR NPN SILICON 350 VOLTS 15 WATTS . . . designed for use in line–operated equipment requiring high fT. • High DC Current Gain hFE = 40 – 160 @ IC = 20 mAdc	Original	PDF	MJE3439 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 TRANSISTOR BC 208 2N3055 BU108 Mje350 2SB527 BDX54 BU326 BU100
mje340 equivalent Abstract: 2SC7 BD801 transistor bd 242 CASE 221A-04 BD8015 rca3055 equivalent BU326 BU108 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD801 Plastic High Power Silicon NPN Transistor 8 AMPERE POWER TRANSISTORS NPN SILICON 100 VOLTS 65 WATTS . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 1.0 Adc	Original	PDF	BD801 BD801 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C mje340 equivalent 2SC7 transistor bd 242 CASE 221A-04 BD8015 rca3055 equivalent BU326 BU108 BU100
bd135 TRANSISTOR REPLACEMENT GUIDE Abstract: transistor Bd 458 transistor BC 56 2N5981 pnp transistor BD135-BD137-BD139 BD139 PIN DATA BU108 transistor BD 325 BD139-25 mje13005 complementary Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc	Original	PDF	BD135 BD137 BD139 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B bd135 TRANSISTOR REPLACEMENT GUIDE transistor Bd 458 transistor BC 56 2N5981 pnp transistor BD135-BD137-BD139 BD139 PIN DATA BU108 transistor BD 325 BD139-25 mje13005 complementary
sensor Flow meter PNP Abstract: sensor DN15 npn transistor dc 558 en 175301-803 burkert s070 DD0-2 transistor 1451 "Flow Sensor" DN25 DN50 Text: 8070 Positive displacement Flow sensor for continuous flow measurement • High accuracy • Medium with high viscosity • Mounting and dismounting of the sensor head by a quarter-turn • Connection to Bürkert devices in remote versions Type 8070 can be combined with.	Original	PDF
tektronix 576 curve tracer Abstract: NDS351N high power pulse generator with mosfet PN channel MOSFET 10A tektronix type 576 curve tracer RC snubber circuit Text: Application Note 558 Ralph Locher Introduction to Power MOSFETs and their Applications INTRODUCTION The Power MOSFETs that are available today perform the same function as Bipolar transistors except the former are voltage controlled in contrast to the current controlled Bipolar devices. Today	Original	PDF
PE-20E Abstract: Digital Pressure Gauge circuit diagram PE-20 PE-20N PE-21 PE-21E PE-21N PE-22 PE-22E PE-22N Text: SERIES LED Bar Display Mechanical Switch is Out of Date Choose the Contemporary Pressure Sensor with LED Bar Display Digital Pressure Controller PAD PE DP-M DP2 PNX Compact Size LED Bar Display LED Digital Display PRESSURE SENSOR PE Marked Conforming to EMC directive	Original	PDF
chip die npn transistor Abstract: No abstract text available Text: 700 Series 20V BIPOLAR ARRAY DESIGN MANUAL Last Revision Date: 2 December 2005 The 700 Series Design Manual has been originated and is maintained by Hans Camenzind, Array Design Inc. San Francisco. Feedback is welcome. Array Design offers design assistance	Original	PDF
tip122 tip127 audio amp schematic Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier Text: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.	Original	PDF	DL111/D July-2001 r14525 tip122 tip127 audio amp schematic mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier

YTS2222A Abstract: transistor marking 1p Z Text: ¡ TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS y t ä m m II YTSZZZZA FOR GENERAL PUROSE USE Unit in mm MEDIUM-SPEED SWITCHING AND AUDIO TO VHF FREQUENCY APPLICATION FEATURES: . DC Current Gain Specified : 0.1— 500mA . Low Collector-Emitter Saturation Voltage	OCR Scan	PDF	500mA YTS2222A 300MHz YTS2907A. 500mA, Ta-25 150mA, YTS2222A transistor marking 1p Z
TRANSISTOR C 557 B Abstract: BUV66 380v UPS diagram schematic diagram UPS s7 100c UPS 380v Scans-007954 Text: 7^5^S37 0 0 5 6 5 0 3 Jj l~*> SGS-THOMSON B U V 66 H L I m « § S G S-TH0MS0N 30E D FAST SWITCHING POWER TRANSISTOR • SUITABLE FOR SW ITCHM ODE POW ER SUP PLY, UPS, DC AND AC M OTOR CONTROL INTERNAL SCHEMATIC DIAGRAM < r ■ • » M B NPN s- buy/	OCR Scan	PDF	BUV66 7T2T237 TRANSISTOR C 557 B BUV66 380v UPS diagram schematic diagram UPS s7 100c UPS 380v Scans-007954
bu548 Abstract: BU548A BUS48 erni relay erni relay B1 5.5 relay ERNI transistor 2sc 548 BUS48A CIT Relay relay ERNI ad 5.2 Text: 17-JUN-1999 16:21 FROM TO MAGNATEC 01132794449 P.02/08 M agnatec 2 0 0 - 5 2 . ¿y K \ MAG N i Magna Park. Coventry Road, Lutterworth Leicestershire LE17 4JB, England Sales telephone: 01455 554711 Admin telephone: 01455 552505 Fax: 01455 558843 CwrtKarc Ho i'j JiiiS	OCR Scan	PDF	17-JUN-1999 BUS48 BUS48A Time-25Â bu548 BU548A erni relay erni relay B1 5.5 relay ERNI transistor 2sc 548 BUS48A CIT Relay relay ERNI ad 5.2
npn transistor dc 558 Abstract: BFQ22S transistor dc 558 npn BFQ24 Transistor 5331 BFQ22 Text: Philips Semiconductors • ^ 53*331 Q O B IS Ü T 4 4 e! M APX Product specification NPN 6 GHz wideband transistor " ■111,1 BFQ22S b'IE J> N AMER PHILIPS/DISCRETE DESCRIPTION PINNING NPN transistor in a TO-72 métal envelope with insulated electrodes and a shield lead connected to the	OCR Scan	PDF	BFQ22S BFQ24. bb53c131 DD3151S BFQ22S npn transistor dc 558 transistor dc 558 npn BFQ24 Transistor 5331 BFQ22
Untitled Abstract: No abstract text available Text: Philips Semiconductors ^ 5 3 *1 3 1 DQ31SQ1? M>41 M A P X ^^roductspecitication NPN 6 GHz wideband transistor “ DESCRIPTION BFQ22S N AUER PHILIPS/DISCRETE b'lE T> PINNING NPN transistor in a TO-72 metal envelope with insulated electrodes and a shield lead connected to the	OCR Scan	PDF	DQ31SQ1 BFQ22S BFQ24. bbS3T31 003151H
transistor schottky model spice Abstract: No abstract text available Text: V T C INC IDE D l^ a a ^ S T O VJ800 “ 0001Ö0S 0 T-H2-21 ANALOG MASTER CHIP FAMILY USER S G U ID E Release 2.2 CONTENTS 1. INTRODUCTION 1.1 Preface. 2-5 1.2 Bipolar-CMOS Comparison. 2-5	OCR Scan	PDF	VJ800 T-H2-21 transistor schottky model spice
BFQ22S Abstract: transistor dc 558 npn BFQ24 transistor 6 MHz transistor bt2 Text: Product sp ecification P h ilip s S em icon d u ctors NPN 6 GHz wideband transistor PHILIPS INTERNATIONAL D ESCRIPTION Z/7 SbE D • 711GÛ2L. BFQ22S 00453^0 114 H P H I N PINNING NPN transistor in a TO-72 metal envelope with insulated electrodes and a shield lead connected to the	OCR Scan	PDF	BFQ22S BFQ24. 7110fl2fc. BFQ22S transistor dc 558 npn BFQ24 transistor 6 MHz transistor bt2
transistor cross reference Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466 Text: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC	OCR Scan	PDF
bf494 Abstract: BF495 transistor transistor BF494 bf494 TRANSISTOR bf495 TRANSISTOR BF495 transistors bf494 Text: Philips Semiconductors Product specification NPN medium frequency transistors FEATURES BF494; BF495 PINNING • Low current max. 30 mA PIN • Low voltage (max. 20 V). 1 base 2 em itter 3 collector APPLICATIONS DESCRIPTION • HF applications in radio and television receivers	OCR Scan	PDF	BF494; BF495 K1AM353 BF494 BF494B BF495 BF495B Jul08 BF495 transistor transistor BF494 bf494 TRANSISTOR TRANSISTOR BF495 transistors bf494
bc5476 Abstract: APPLICATION OF BC548 transistor BC547 bc547 pnp BC548 pnp bc547 transistor BC548 pnp transistor BC548 transistor pnp of transistor BC548 transistor bc547 features Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BC546/7/8 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . FEATURES • High Voltage : BC546 V Ceo=65V. • For Complementary With PNP Type BC556/557/558. MAXIMUM RATINGS Ta=25°C	OCR Scan	PDF	BC546/7/8 BC546 BC556/557/558. BC547 BC548 bc5476 APPLICATION OF BC548 transistor BC547 bc547 pnp BC548 pnp bc547 transistor BC548 pnp transistor BC548 transistor pnp of transistor BC548 transistor bc547 features

Privacy Settings

NPN TRANSISTOR DC 558 Search Results

NPN TRANSISTOR DC 558 Result Highlights (5)

NPN TRANSISTOR DC 558 Datasheets Context Search

2N4922

BU108

TIP34C equivalent

BU108

BU108

BU108

TRANSISTOR BC 208

mje340 equivalent

bd135 TRANSISTOR REPLACEMENT GUIDE

sensor Flow meter PNP

tektronix 576 curve tracer

PE-20E

chip die npn transistor

tip122 tip127 audio amp schematic

YTS2222A

TRANSISTOR C 557 B

bu548

npn transistor dc 558

Untitled

transistor schottky model spice

BFQ22S

transistor cross reference

bf494

bc5476