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    NPN SMALL SIGNAL PSPICE Search Results

    NPN SMALL SIGNAL PSPICE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TCTH022AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH022BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Open-drain type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH012BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Open-drain type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH012AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation

    NPN SMALL SIGNAL PSPICE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Sony Semiconductor Replacement Handbook 1991

    Abstract: 2sc5088 horizontal transistors tcxo philips 4322 20000w audio amplifier circuit diagram replacement for 2sc5088 horizontal transistors motorola power fet rf databook 2SK170BL Funkamateur transistor 1060 schematic diagram tv sony
    Text: Philips RF Manual product & design manual for RF small signal discretes 3 edition July 2003 rd / discretes/documentation/rf_manual Document number: 4322 252 06384 Date of release: July 2003 3rd edition


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    CA158

    Abstract: MM158 microsim
    Text: CA158 SPICE Macromodel Application Note September 1997 MM158.1 Introduction This application note describes the SPICE macro-model for the CA158, a general purpose op amp. The macromodel for the CA158 is PSPICE registered trademark of MicroSim Corp. compatible, and may be compatible with other simulation programs as well. The model file is in ASCII format and


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    PDF CA158 MM158 CA158, microsim

    20000w audio amplifier circuit diagram

    Abstract: Sony Semiconductor Replacement Handbook 1991 20000w audio amplifier pcb IRF power mosfets catalog IRF TRANSISTOR SUBSTITUTION philips rf manual 2SK170BL 2SK163 Funkamateur TEA5767
    Text: 2nd edition RF Manual product & design manual for RF small signal discretes product & design manual for RF small signal discretes 2nd edition October 2002 Page: 1 2nd edition RF Manual product & design manual for RF small signal discretes Content 1. 2. 3.


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    PDF BB202, BGA6589 20000w audio amplifier circuit diagram Sony Semiconductor Replacement Handbook 1991 20000w audio amplifier pcb IRF power mosfets catalog IRF TRANSISTOR SUBSTITUTION philips rf manual 2SK170BL 2SK163 Funkamateur TEA5767

    chip die npn transistor

    Abstract: No abstract text available
    Text: 700 Series 20V BIPOLAR ARRAY DESIGN MANUAL Last Revision Date: 2 December 2005 The 700 Series Design Manual has been originated and is maintained by Hans Camenzind, Array Design Inc. San Francisco. Feedback is welcome. Array Design offers design assistance


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    2N5551B

    Abstract: tr 5551 2N5551 SOT23 2n5551 BR 5551 2N5551 circuit 2N5551BU BR N 5551
    Text: 2N5551- MMBT5551 tm NPN General Purpose Amplifier Features • This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Suffix “-C” means Center Collector in 2N5551 1. Emitter 2. Collector 3. Base • Suffix “-Y” means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V)


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    PDF 2N5551- MMBT5551 MMBT5551 2N5551 OT-23 2N5551 2N5551B tr 5551 2N5551 SOT23 BR 5551 2N5551 circuit 2N5551BU BR N 5551

    2N5551B

    Abstract: 2n5551yc sot-23 marking NE 2N5551BU 2N5551Y 2N5551YTA 5551n transistor marking code ne SOT-23 2n5551c-y 2N5551YBU
    Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


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    PDF 2N5551 MMBT5551 2N5551 OT-23 2N5551YIUBU 2N5551YTA 2N5551TA 2N5551CBU 2N5551IUTA 2N5551B 2n5551yc sot-23 marking NE 2N5551BU 2N5551Y 5551n transistor marking code ne SOT-23 2n5551c-y 2N5551YBU

    fairchild date code

    Abstract: PN3643
    Text: PN3643 PN3643 NPN General Purpose Amplifier • This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300mA. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings* TA=25°C unless otherwise noted


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    PDF PN3643 300mA. PN3643 O-92-3 fairchild date code

    circuit diagram of mosfet based smps power supply

    Abstract: mosfet triggering circuit for inverter FDS6694 optocoupler pnp or npn phototransistor spice model computer smps circuit diagram optocoupler crossreference MOSFET cross-reference high gain low voltage NPN transistor triac spice model
    Text: Analog Discrete Interface & Logic Optoelectronics The Innovations Never Stop Contents • Comprehensive New Product List · New Product Highlights · Featured Application · New at fairchildsemi.com Fairchild continues to develop new products, solutions and technologies—just


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    PDF Power247TM, circuit diagram of mosfet based smps power supply mosfet triggering circuit for inverter FDS6694 optocoupler pnp or npn phototransistor spice model computer smps circuit diagram optocoupler crossreference MOSFET cross-reference high gain low voltage NPN transistor triac spice model

    nmos transistor 0.35 um

    Abstract: npn pnp rf transistor bipolar cross reference l24c using a zener diode as a varicap NMOS depletion pspice model bsim3 model for 0.18 micron technology for hspice bsim3 model MOS RM3 QS 100 NPN Transistor analog devices transistor tutorials
    Text: 0.6 µm BiCMOS Process Family XHB06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular HV BCD Technology Description The XHB06 is X-FAB's 0.6 Micron High-Voltage Bipolar CMOS DMOS BCD Technology, optimized for applications requiring operating voltages of 5V to 30V. Main target applications are power


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    PDF XHB06 XHB06 nmos transistor 0.35 um npn pnp rf transistor bipolar cross reference l24c using a zener diode as a varicap NMOS depletion pspice model bsim3 model for 0.18 micron technology for hspice bsim3 model MOS RM3 QS 100 NPN Transistor analog devices transistor tutorials

    laser diode spice modeling

    Abstract: laser diode spice model simulation spice ATF 10136 atf-10136 spice MSA-09 ATF13136 mmic a20 MSA-0311 AT-41500 S parameters for ATF 10136
    Text: Application Design Tools Services and Applications Literature Hewlett-Packard customers are supported by an Applications Engineering Department. The applications engineering staff investigates circuit applications, design techniques, and device performance. The results of these


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    PDF 42E-13 04E-1 53E-13 5E-12 87E-2 1E-14) INA-12 900MHz 900E6) laser diode spice modeling laser diode spice model simulation spice ATF 10136 atf-10136 spice MSA-09 ATF13136 mmic a20 MSA-0311 AT-41500 S parameters for ATF 10136

    CA158

    Abstract: No abstract text available
    Text: Harris Semiconductor No. MM158.1 Harris Linear September 1997 CA158 SPICE Macromodel Authors: Rob Adams and Don LaFontaine Introduction topology consists of three main functional sections: an input stage, interstage, and an output stage This application note describes the SPICE macro-model for


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    PDF MM158 CA158 CA158, 1-800-4-HARRIS

    Harris 4741

    Abstract: HA4741 Pspice 4741
    Text: Harris Semiconductor No. MM4741.1 Harris Linear September 1997 HA-4741 SPICE Macromodel Authors: Rob Adams and Don LaFontaine Introduction voltage and current limiting and DC power drain. The model topology consists of three main functional sections: an input


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    PDF MM4741 HA-4741 HA-4741, 1-800-4-HARRIS Harris 4741 HA4741 Pspice 4741

    Harris 4741

    Abstract: HA-4741 microsim 4741 harris NPN SMALL SIGNAL PSPICE 8155E 4741
    Text: Harris Semiconductor No. MM4741 Harris Linear March 1997 HA-4741 SPICE Macromodel Authors: Rob Adams and Don LaFontaine Introduction voltage and current limiting and DC power drain. The model topology consists of three main functional sections: an input stage, interstage, and an output stage


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    PDF MM4741 HA-4741 HA-4741, 1-800-4-HARRIS Harris 4741 microsim 4741 harris NPN SMALL SIGNAL PSPICE 8155E 4741

    CA158

    Abstract: microsim HA4741 MM158 NPN SMALL SIGNAL PSPICE BF375
    Text: Harris Semiconductor No. MM158 Harris Linear March 1997 CA158 SPICE Macromodel Authors: Rob Adams and Don LaFontaine Introduction topology consists of three main functional sections: an input stage, interstage, and an output stage This application note describes the SPICE macro-model for


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    PDF MM158 CA158 CA158, 1-800-4-HARRIS microsim HA4741 MM158 NPN SMALL SIGNAL PSPICE BF375

    Untitled

    Abstract: No abstract text available
    Text: 2N4123 [ [ ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] 2N4123 C TO-92 BE NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA. Absolute Maximum Ratings*


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    PDF 2N4123 O-92-3 2N4123

    transistor w04

    Abstract: transistor w07 W04 npn 10137F TC116 W04 transistor mje 3001
    Text: MAX3840EGJ I/O Model SPICE I/O Macromodels aid in understanding signal integrity issues in electronic systems. Most of Maxim’s High Frequency/Fiber Communication ICs utilize input and output I/O circuits with Current Mode Logic (CML), Positive Emitter Coupled Logic (PECL), and Low Voltage Differential Signal


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    PDF MAX3840EGJ N402V066 transistor w04 transistor w07 W04 npn 10137F TC116 W04 transistor mje 3001

    Tc264

    Abstract: No abstract text available
    Text: MAX3841 I/O Model SPICE I/O Macromodels aid in understanding signal integrity issues in electronic systems. Most of Maxim’s High Frequency/Fiber Communication ICs utilize input and output I/O circuits with Current Mode Logic (CML), Positive Emitter Coupled Logic (PECL), and Low Voltage


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    PDF MAX3841 N102M066 REPORTERL1N36 DE0396 REPORTERL1N28 REPORTERL1N29 485E-018 DE0396 Tc264

    2N5088 Cross Reference

    Abstract: 2N5088 power 50-kV 2N5089 fairchild 2n5088 application note 2N5088 Fairchild
    Text: 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.


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    PDF 2N5088 MMBT5088 2N5089 MMBT5089 2N5089 OT-23 2N5088 Cross Reference 2N5088 power 50-kV 2N5089 fairchild 2n5088 application note 2N5088 Fairchild

    NF1010

    Abstract: No abstract text available
    Text: MAX3760E/D I/O Model SPICE I/O Macromodels aid in understanding signal integrity issues in electronic systems. Most of Maxim’s High Frequency/Fiber Communication ICs utilize input and output I/O circuits with Current Mode Logic (CML), Positive Emitter Coupled Logic


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    PDF MAX3760E/D HDE113032 REPORTERL1N63 REPORTERL1N64 181E-017 HDE113032 NF1010

    7 amps pnp transistor

    Abstract: 7S1 zener diode transistor C 4231 EM-83 ic for hearing aid operational amplifier discrete schematic pnp darlington array EM-21 DARLINGTON ARRAYS Darlington Independent Power Module
    Text: E C I SEMICONDUCTOR MAE D • 305fl7b7 0 0 0 0 D7 4 Oôb « E C I S -jy DESCRIPTION The ECI Semiconductor EM series has been generated to provide cost and space effective high performance analog system solutions in silicon for your specific application. The EM family of low-cost 30v Bipolar Gridded Semicustom Arrays is


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    PDF 302A7L7 0D00074 302fl7b7 7 amps pnp transistor 7S1 zener diode transistor C 4231 EM-83 ic for hearing aid operational amplifier discrete schematic pnp darlington array EM-21 DARLINGTON ARRAYS Darlington Independent Power Module

    chip die npn transistor

    Abstract: MM1007
    Text: 0PLESSEY FEBRUARY 1989 Semiconductors MM Series Macrochip Analog Semicustom Arrays DESCRIPTION The MM "Macrochip" series utilizes a standard bipolar pro­ cess allowing for operation at voltages up to 20V. Typical circuit blocks for the MM series include pre-amplifiers, com­


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    PDF PS2314, chip die npn transistor MM1007

    Untitled

    Abstract: No abstract text available
    Text: GEC P L E S S E Y S E M I C O N D S 31E D • 37bfl522 D O l l b i ? fl ■ O PLESSEY T -4 2 -z i FEBRUARY 1989 Semiconductors MM Series Macrochip Analog Sem icustom Arrays DESCRIPTION The MM "Macrochip" series utilizes a standard bipolar pro­ cess allowing for operation at voltages up to 20V. Typical


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    PDF 37bfl522 thoro444410 PS2314,

    op amp 741 model PSpice

    Abstract: pnp transistor 3609 pnp npn dual emitter connected plessey capacitor MM-10004 transistor 2x MM1008 DN660 me 4946 operational amplifier discrete schematic
    Text: Q PLESSEY FEBRUARY 1989 Semiconductors MM Series Macrochip Analog Semicustom Arrays DESCRIPTION The MM "Macrochip" series utilizes a standard bipolar pro­ cess allowing for operation at voltages up to 20V. Typical circuit blocks for the MM series include pre-amplifiers, com­


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    PDF PS2314, op amp 741 model PSpice pnp transistor 3609 pnp npn dual emitter connected plessey capacitor MM-10004 transistor 2x MM1008 DN660 me 4946 operational amplifier discrete schematic

    3400 8k transistor

    Abstract: No abstract text available
    Text: GEC PLESSEY SEMICONDS 31E D 37bflSS2 OOllbfli *1 • P 1L E 8 8 E Y March 1990 SEMICONDUCTORS■ MF SERIES MACROCHIP HIGH FREQUENCY BIPOLAR ANALOG ARRAYS DESCRIPTION The M F Series is a family of 5 arrays designed for use in high speed analog applications.


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    PDF 37bflSS2 100MHz 00V/us /-10mV 3400 8k transistor