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    NPN 9012 Search Results

    NPN 9012 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    NPN 9012 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    9013B

    Abstract: No abstract text available
    Text: 9013B 9013B Silicon NPN Epitaxial Transistor Description :The 9013B is designed for audio frequency general amplifier applications Features: ●Excellent hFE Linearity ●Complementary to 9012B Chip Appearance Chip Size 490umx490um Chip Thickness 210±20um


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    PDF 9013B 9013B 9012B 490um 490um 110um 110um

    9013A

    Abstract: No abstract text available
    Text: 9013A 9013A Silicon NPN Epitaxial Transistor Description: The 9013A is designed for audio frequency general amplifier applications Features: ●Excellent hFE Linearity ●Complementary to 9012A Chip Appearance Chip Size 440umx440um Chip Thickness 210±20um


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    PDF 440um 440um 110um 110um 500mA 9013A

    9013 transistor

    Abstract: Transistor-9013 h UTC 9013 9013 NPN Transistor
    Text: UTC 9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. 625mW *High collector current. (500mA) *Excellent hFE linearity. *Complementary to UTC 9012 1 TO-92 1: EMITTER


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    PDF 625mW) 500mA) 500mA 500mA, QW-R201-030 9013 transistor Transistor-9013 h UTC 9013 9013 NPN Transistor

    9013 npn

    Abstract: NPN 9013 transistor c 9013 9013 npn transistor 9013G C 9013 transistor transistor 9013 9013 NPN Output Transistor IC 9013 transistor 9013 H NPN
    Text: UNISONIC TECHNOLOGIES CO., LTD 9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION „ FEATURES 1 * High total power dissipation. 625mW * High collector current. (500mA) * Excellent hFE linearity. * Complementary to UTC 9012


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    PDF 625mW) 500mA) 9013-x-T92-B 9013L-x-T92-B 9013G-x-T92-B 9013-x-T92-K 9013L-x-T92-K 9013G-x-T92-K 9013-x-T92-R 9013L-x-T92-R 9013 npn NPN 9013 transistor c 9013 9013 npn transistor 9013G C 9013 transistor transistor 9013 9013 NPN Output Transistor IC 9013 transistor 9013 H NPN

    UTC 9013

    Abstract: 9013 NPN data sheet NPN 9013 transistor c 9013 9013 npn transistor NPN SILICON TRANSISTOR 9013 UTC9013 NPN 9013 PDF DATA SHEET 9013npn 9012 Unisonic
    Text: UTC 9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. 625mW *High collector current. (500mA) *Excellent hFE linearity. *Complementary to UTC 9012 1 TO-92 1: EMITTER


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    PDF 625mW) 500mA) QW-R201-030 UTC 9013 9013 NPN data sheet NPN 9013 transistor c 9013 9013 npn transistor NPN SILICON TRANSISTOR 9013 UTC9013 NPN 9013 PDF DATA SHEET 9013npn 9012 Unisonic

    9013 SOT-23

    Abstract: 9013 transistor sot-23 NPN 9013 MMBT9013LT1 MMBT9013 9013 NPN Output Transistor 9522 transistor mmbt9013l.t1 ic 8022 transistor 9012 9013
    Text: MMBT9013LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 1W OUTPUT AMPLIFIER OF PORTABLE 1 RADIOS IN CLASS B PUSH-PULL OPERATION 2 1. Complement to 9012 Collector Current :Ic=500mA 1.BASE 2.EMITTER 3.COLLECTOR 2.4 1.3 0.4 0.95 0.95 2.9 1.9 High Total Power Dissipation Pc=225mW


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    PDF MMBT9013LT1 OT-23 500mA 225mW 9013 SOT-23 9013 transistor sot-23 NPN 9013 MMBT9013LT1 MMBT9013 9013 NPN Output Transistor 9522 transistor mmbt9013l.t1 ic 8022 transistor 9012 9013

    9013 sot-23

    Abstract: transistor c 9013 9012 transistor 9013 transistor sot-23 9013 NPN Output Transistor Transistor 9013 transistor 9012 9013
    Text: MMBT9013LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 1W OUTPUT AMPLIFIER OF PORTABLE 1 RADIOS IN CLASS B PUSH-PULL OPERATION 2 1. Complement to 9012 Collector Current :Ic=500mA 1.BASE 2.EMITTER 3.COLLECTOR 2.4 1.3 0.4 0.95 0.95 2.9 1.9 High Total Power Dissipation Pc=225mW


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    PDF MMBT9013LT1 OT-23 500mA 225mW Ele20 9013 sot-23 transistor c 9013 9012 transistor 9013 transistor sot-23 9013 NPN Output Transistor Transistor 9013 transistor 9012 9013

    9013 npn transistor

    Abstract: 9012 Unisonic
    Text: UNISONIC TECHNOLOGIES CO., LTD 9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION 1  FEATURES TO-92 * High total power dissipation. 625mW * High collector current. (500mA) * Excellent hFE linearity.


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    PDF 625mW) 500mA) 9013L-x-T92-B 9013G-x-T92-B 9013L-x-T92-K 9013G-x-T92-K QW-R201-030 9013 npn transistor 9012 Unisonic

    transistor BR 9013

    Abstract: transistor c 9013 transistor 9013 9013 transistor BR 9013 9013 pnp NPN 9013 9013 NPN Transistor Transistor-9013 h 9013 NPN Output Transistor
    Text: ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


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    PDF 50MHz transistor BR 9013 transistor c 9013 transistor 9013 9013 transistor BR 9013 9013 pnp NPN 9013 9013 NPN Transistor Transistor-9013 h 9013 NPN Output Transistor

    transistor c 9013

    Abstract: transistor BR 9013 NPN 9013 9013 transistor transistor 9013 BR 9013 9013 npn transistor 9013 pnp pin configuration NPN transistor 9013 npn 9013
    Text: ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


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    PDF 50MHz transistor c 9013 transistor BR 9013 NPN 9013 9013 transistor transistor 9013 BR 9013 9013 npn transistor 9013 pnp pin configuration NPN transistor 9013 npn 9013

    transistor BR 9013

    Abstract: transistor c 9013 transistor 9013 NPN 9013 s 9013 h PNP 9013 9013 transistor BR 9012 c 9013 g 9013 npn transistor
    Text: ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


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    PDF 50MHz transistor BR 9013 transistor c 9013 transistor 9013 NPN 9013 s 9013 h PNP 9013 9013 transistor BR 9012 c 9013 g 9013 npn transistor

    transistor BR 9013

    Abstract: BR 9013 transistor 9012 data sheet NPN 9013 9013 transistor 9013 npn transistor datasheet transistor 9013 data sheet transistor 9012 transistor c 9013 9013 npn
    Text: ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


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    NPN 9013

    Abstract: transistor BR 9013 pin configuration NPN transistor 9013 npn 9013 npn transistor 9013 transistor pin configuration NPN transistor 9012 PNP 9013 NPN transistor c 9013 9013 pnp data sheet NPN 9013
    Text: ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


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    PDF 50MHz NPN 9013 transistor BR 9013 pin configuration NPN transistor 9013 npn 9013 npn transistor 9013 transistor pin configuration NPN transistor 9012 PNP 9013 NPN transistor c 9013 9013 pnp data sheet NPN 9013

    9013 NPN Output Transistor

    Abstract: transistor c 9013 transistor cs 9012 transistor cs 9013
    Text: UNISONICTECHNOLOGIESCO., LTD 9013 NPN EPITAXIAL SILICON TRANSISTOR 1 W OU T PU T AM PLI FI ER OF POT ABLE RADI OS I N CLASS B PU SH -PU LL OPERAT I ON ̈ 1 FEAT U RES * High total power dissipation. 625mW * High collector current. (500mA) * Excellent hFE linearity.


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    PDF 625mW) 500mA) 9013-x-T92-B 9013L-x-T92-B 9013G-x-T92-B 9013-x-T92-K 9013L-x-T92-K 9013G-x-T92-K 9013-x-T92-R 9013L-x-T92-R 9013 NPN Output Transistor transistor c 9013 transistor cs 9012 transistor cs 9013

    Transistor-9013 h

    Abstract: Transistor 9013 transistor BR 9013 9012 pnp data sheet transistor 9012 transistor c 9012 PNP 9012 data sheet NPN 9013 Transistor 9012 G 9013 transistor
    Text: ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


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    2N5672

    Abstract: 2N5671 81TI
    Text: ¿2&M0SPEC HIGH POWER NPN SILICON POWER TRANSISTORS NPN High-Current, High-Speed, High-Power Type for Switching and Amplifier Applications. 2N5671 2N5672 FEATURES: * DC Current Gain hFE = 20 ~ 100 @ lc = 15 A ,VCE=2.0 V * Low VCE SAT < 0.75 V @ lc=15A, lB=1,2A


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    PDF 2N5671 2N5672 2N5671, 81TI

    transistor cs 9012

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR SS9013 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • • • • T O -92 High total pow er dissipation. PT=625mW High C ollector Current. (lc=500m A) C om plem entary to S S 9012 Excellent hpE linearity.


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    PDF SS9013 625mW transistor cs 9012

    Untitled

    Abstract: No abstract text available
    Text: SEM ICONDUCTOR KTC9013 TECHNI CAL DATA EPI TAXI AL PLANAR NPN TRA NS IST OR G E N E R A L PUR PO SE A PPLICATION. SW ITC H IN G APPLICATIO N. FEA T U RE S • Excellent h FE Linearity. • Complementary to K TC 9012. DIM G -1 M A X IM U M RATING Ta=25°C


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    PDF KTC9013

    ksd999

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC bGE D 7 ^ 4 1 4 2 0011525 fib3 • SMGK TRANSISTORS FUNCTION GUIDE TO-92 Type Transistors Continued Condition Device and Polarity NPN KSP66Û2 2N4401 KSP2222A 2N4400 2N3903 2N3904 KSP20 KSC1330 KSD471A PNP 2N4403 KSP2907 2N4402 2N3905


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    PDF KSP66Ã 2N4401 KSP2222A 2N4400 2N3903 2N3904 KSP20 KSC1330 KSD471A KSD227 ksd999

    transistor BR 9013

    Abstract: NPN 9013 transistor c 9013 9013 npn transistor br 9013 transistor 9012 9013 9013 transistor Transistor 9013 9013 pnp transistor npn c 9013
    Text: HN 9013 NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, G and H, according to its DC current gain. As complementary type


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    transistor c 9018

    Abstract: Transistor CL 100 9011 9012 9013 9014 9018 transistor 9014 NPN transistor 9013 NPN audio output V. 9014 c 9016 transistor audio output TRANSISTOR NPN 9013 9011 NPN transistor npn 9016 transistor
    Text: SELECTION GUIDE FOR AM / FM RADIO TRANSISTOR KIT Output AM R E C E IV E R r- IF 2 IF1 Conv. 901Ì 901 9012 A F Amp. 9011 SP. 9014 or :9015 7 <1 9013 Output FM R E C E IV E R F M RF 90! 6 rF M Conv. F M IF A M Conv. 9011/8 9016/8 A M / F M IF AF A m o A M / F M IF


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    PDF T0-92B 500fi 10kfi transistor c 9018 Transistor CL 100 9011 9012 9013 9014 9018 transistor 9014 NPN transistor 9013 NPN audio output V. 9014 c 9016 transistor audio output TRANSISTOR NPN 9013 9011 NPN transistor npn 9016 transistor

    9014 ch

    Abstract: transistor npn c 9014 9018 transistor transistor c 9018 9011 9012 9013 9014 9018 100-10L 9018 transistor 9013 NPN audio output 9011 9012 pnp transistor
    Text: »v'.-T i V.y*, 7 “ •1 v í- j m £?| P Im I I I m . C-iS.fi w - f , , :;1 | AM. FM RADIO TRANSISTOR KIT „ L’ J V->.' ., t« V SELECTION CUIDE FOR FIVI RADIO TRANSISTOR KIT A IVI Output KM 9012 AM RECEIVER w AF Amp- IF 2 IF Conv. SP. KM90J4 KM 9011


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    PDF O-92A 9014 ch transistor npn c 9014 9018 transistor transistor c 9018 9011 9012 9013 9014 9018 100-10L 9018 transistor 9013 NPN audio output 9011 9012 pnp transistor

    CP1005

    Abstract: 9011 9012 9013 9014 9018 C 9014 transistor transistor 9014 C npn 9011 NPN transistor 9011 transistor 9015 PNP 9016 9013 NPN Output Transistor transistor npn c 9014
    Text: fi* £ ,. ¿YrA \ *j i w 'äf? m m H :;1 i Ä \jif- ^ s •'«•J-, m &3W^m¡jfir . Ï 'iS.fi. I FM SERIES AM. FM RADIO TRANSISTOR KIT - ^ttk SELECTION AIV! K M 9000 ¡8a¡$ W bJ . GUIDE FOR RADIO TRANSISTOR KIT Output KM 9012 AM RECEIVER? y Conv. IF KM901I


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    PDF KM90II KM90I5 KM901I/8 KM90II/8 KM90I4 KM9015 KM90I: KM90i to-92a CP1005 9011 9012 9013 9014 9018 C 9014 transistor transistor 9014 C npn 9011 NPN transistor 9011 transistor 9015 PNP 9016 9013 NPN Output Transistor transistor npn c 9014

    9011 9012 9013 9014 9018

    Abstract: 9011 NPN transistor transistor c 9018 npn 9016 transistor F 9016 transistor transistor 9014 C npn C 9014 transistor 9018 transistor 9016 transistor pnp transistor 9015
    Text: 'ty i / >; •i CL9000 i ÎÏ t it -V, 1'* r-t, *i *Vj 1t E i SERIES AM FM RADIO TRANSISTOR KIT G U ID E SELECTION FOR AM / FM RADIO TRANSISTOR KIT Output AM R EC EIV ER? Y _ son IF2 IF1 Conv. H 90 H 9012 AF Amp. 9014 M 90U SP. or <1 :9015 9013 Output FM R EC EIV ER


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    PDF CL9000 T0-92B 10kfi 9011 9012 9013 9014 9018 9011 NPN transistor transistor c 9018 npn 9016 transistor F 9016 transistor transistor 9014 C npn C 9014 transistor 9018 transistor 9016 transistor pnp transistor 9015