NP12N06ILB Search Results

NP12N06ILB Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NP12N06ILB		NEC	SWITCHING N-CHANNEL POWER MOS FET		Original	PDF
NP12N06ILB		NEC	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE		Scan	PDF

NP12N06ILB Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
D1345 Abstract: MJ5025 NP12N06HLB NP12N06ILB Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP12N06HLB, NP12N06ILB SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. PART NUMBER PACKAGE	Original	PDF	NP12N06HLB, NP12N06ILB O-251 NP12N06HLB O-252 O-251) D1345 MJ5025 NP12N06HLB NP12N06ILB
2SK2500 Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861 Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose	Original	PDF
TO220-SMD Abstract: TO-220SMD TO220SMD NP55N06ELD STB80N06-10 Text: H I G H T E M P E R AT U R E N C H A N N E L P O W E R M O S F E T S NP SERIES • MAXIMUM JUNCTION TEMPERATURE OF 175˚C FUNCTIONAL EQUIVALENTS • DRAIN CURRENTS FROM 10A TO 84A WITH POWER DISSIPATION UP TO 190W • LOW AND HIGH VOLTAGE VERSIONS, UP TO 450V	Original	PDF	BUK465-100A BUK466-100A BUK565-100A BUK7608-55 BUK7614-55 BUK7618-55 BUK7620-55 BUK7624-55 BUK7628-5 BUK7635-55 TO220-SMD TO-220SMD TO220SMD NP55N06ELD STB80N06-10
TO-252 MOSFET p channel Abstract: NP80N03CLE NP80N03DLE NP80N03ELE NP80N04CHE NP80N04DHE NP80N04EHE NP84N04CHE NP84N04DHE NP84N04EHE Text: Power house NP-Series 4/99 l TJ, MAX = 175° C l Ultra low On-Resistance RDS ON l Low Gate-Charge l Avalanche Energy rated MOSFET by NEC: W e l l - b u i l t Our hotheads can take the heat. Up to 175° C. Target Market and Applications l Automotive - Electric Power Steering	Original	PDF	NL-5612 S-18322 F-78142 E-28007 NP-S-NEWS109V30 TO-252 MOSFET p channel NP80N03CLE NP80N03DLE NP80N03ELE NP80N04CHE NP80N04DHE NP80N04EHE NP84N04CHE NP84N04DHE NP84N04EHE
TO-252 MOSFET p channel Abstract: nec 288 powermosfet Gate Drive STR 1504 TO-262 MOSFET NP80N03CLE NP80N03DLE NP80N04CHE NP80N04DHE NP84N04CHE Text: Power house NP-Series Q3/2001 ● TJ, MAX = 175° C ● Ultra low On-Resistance RDS ON ● Low Gate-Charge ● Avalanche Energy rated MOSFET by NEC: W e l l - b u i l t Our hotheads can take the heat. Up to 175° C. Target Market and Applications l Automotive	Original	PDF	Q3/2001 NL-5612 S-18322 F-78142 E-28007 NP-S-NEWS071V50 TO-252 MOSFET p channel nec 288 powermosfet Gate Drive STR 1504 TO-262 MOSFET NP80N03CLE NP80N03DLE NP80N04CHE NP80N04DHE NP84N04CHE
nec 501 t Abstract: NP12N06HLB NP12N06ILB 2130m Text: PRELIMINARY PRODUCT INFORMATION M O S Field Effect Power Transistor NP12N06HLB,NP12N06ILB SW ITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS DESCRIPTION in millimeter This product is N-Channel MOS Field Effect Transistor de 2.3±0.2 signed for high current switching applications.	OCR Scan	PDF	NP12N06HLB NP12N06ILB 100mQ 130mQ 570pF O-251 NP12N06ILB O-252 nec 501 t 2130m