1N4756A
Abstract: diode iz zener silcon diode
Text: SEMICONDUCTOR 1N4756A TECHNICAL DATA ZENER DIODE SILCON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. FEATURES Normal Voltage Tolerance about 5% B C DIM MILLIMETERS A 4.2~5.2 B MIN 25.4 2.0~2.7 C 0.71~0.86 D A B D MAXIMUM RATING Ta=25 CHARACTERISTIC
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1N4756A
DO-41
1N4756A
diode iz zener
silcon diode
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1N3292
Abstract: 1N3293 2000C
Text: 1N3288-1N3297 NAINA SILICON POWER DIODE DO - 8 FEATURES • Diffused Series • Available in Normal & Reverse Polarity • Industrial Grade • Available In Avalanche Characteristic ELECTRICAL SPECIFICATIONS IF Maximum Average Forward Current Te=1250C Maximum peak forward
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1N3288-1N3297
1250C
400C/g
1N32881N3289
1N32901N3291
1N3292
1N3293
1N32941N3295IN3296
1N3293
2000C
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ZENER DIODE with Iz max Iz min
Abstract: KDZ110VW
Text: SEMICONDUCTOR KDZ110VW TECHNICAL DATA Bi-DIRECTIONAL ZENER DIODE SILICON EPITAXIAL PLANAR DIODE EL Driver System Application. G K B E Small Package : USC A L 1 FEATURES H F Sharp breakdown characteristic. Normal Voltage Tolerance About 5.0% 2 J D C I MAXIMUM RATING Ta=25
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KDZ110VW
20x20mm
ZENER DIODE with Iz max Iz min
KDZ110VW
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ZENER DIODE with Iz max Iz min
Abstract: KDZ100VW TJ B C
Text: SEMICONDUCTOR TECHNICAL DATA KDZ100VW Bi-DIRECTIONAL ZENER DIODE SILICON EPITAXIAL PLANAR DIODE EL Driver System Application. G B E Small Package : USC A L K 1 FEATURES H Normal Voltage Tolerance About F Sharp breakdown characteristic. 5.0% 2 J D C I MAXIMUM RATING Ta=25
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KDZ100VW
20x20mm
ZENER DIODE with Iz max Iz min
KDZ100VW
TJ B C
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1N5832
Abstract: No abstract text available
Text: 1N5832 thru 1N5834R Naina Semiconductor Ltd. Schottky Power Diode, 40A Features • • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity DO-203AB DO-5 Maximum Ratings (TJ = 25oC, unless otherwise noted)
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1N5832
1N5834R
DO-203AB
1N5833
1N5834
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1N6095
Abstract: No abstract text available
Text: 1N6095 thru 1N6096R Naina Semiconductor Ltd. Schottky Power Diode, 25A Features • • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity DO-203AA DO-4 Maximum Ratings (TJ = 25oC, unless otherwise noted)
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1N6095
1N6096R
DO-203AA
125oC
1N6096
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1N5829
Abstract: No abstract text available
Text: 1N5829 thru 1N5831R Naina Semiconductor Ltd. Schottky Power Diode, 25A Features • • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity DO-203AA DO-4 Maximum Ratings (TJ = 25oC, unless otherwise noted)
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1N5829
1N5831R
DO-203AA
125oC
1N5830
1N5831
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1N6097
Abstract: No abstract text available
Text: 1N6097 thru 1N6098R Naina Semiconductor Ltd. Schottky Power Diode, 50A Features • • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity DO-203AB DO-5 Maximum Ratings (TJ = 25oC, unless otherwise noted)
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1N6097
1N6098R
DO-203AB
1N6098
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1N5826
Abstract: No abstract text available
Text: 1N5826 thru 1N5828R Naina Semiconductor Ltd. Schottky Power Diode, 15A Features • • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity DO-203AB DO-5 Maximum Ratings (TJ = 25oC, unless otherwise noted)
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1N5826
1N5828R
DO-203AB
1N5827
1N5828
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L6574
Abstract: L6574D 200 Amp bridge mosfet 12v cfl ballast D97IN492 st l6574 ignition mosfet Ballast driver L6574
Text: L6574 CFL/TL BALLAST DRIVER PREHEAT AND DIMMING HIGH VOLTAGE RAIL UP TO 600V dV/dt IMMUNITY ± 50 V/ns IN FULL TEMPERATURE RANGE DRIVER CURRENT CAPABILITY: 250mMA SOURCE 450mA SINK SWITCHING TIMES 80/40ns RISE/FALL WITH 1nF LOAD CMOS SHUT DOWN INPUT UNDER VOLTAGE LOCK OUT
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L6574
250mMA
450mA
80/40ns
L6574
SO16N
DIP16
L6574D
L6574D
200 Amp bridge mosfet
12v cfl ballast
D97IN492
st l6574
ignition mosfet
Ballast driver L6574
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L6574D
Abstract: Ballast driver L6574 L6574 200 Amp bridge mosfet
Text: L6574 CFL/TL BALLAST DRIVER PREHEAT AND DIMMING HIGH VOLTAGE RAIL UP TO 600V dV/dt IMMUNITY ± 50 V/ns IN FULL TEMPERATURE RANGE DRIVER CURRENT CAPABILITY: 250mMA SOURCE 450mA SINK SWITCHING TIMES 80/40ns RISE/FALL WITH 1nF LOAD CMOS SHUT DOWN INPUT UNDER VOLTAGE LOCK OUT
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L6574
250mMA
450mA
80/40ns
L6574
SO16N
DIP16
L6574D
L6574D
Ballast driver L6574
200 Amp bridge mosfet
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Ballast driver L6574
Abstract: L6574 L6574D 600v 20 amp mosfet
Text: L6574 CFL/TL BALLAST DRIVER PREHEAT AND DIMMING HIGH VOLTAGE RAIL UP TO 600V dV/dt IMMUNITY ± 50 V/ns IN FULL TEMPERATURE RANGE DRIVER CURRENT CAPABILITY: 250mMA SOURCE 450mA SINK SWITCHING TIMES 80/40ns RISE/FALL WITH 1nF LOAD CMOS SHUT DOWN INPUT UNDER VOLTAGE LOCK OUT
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L6574
250mMA
450mA
80/40ns
L6574
SO16N
DIP16
L6574D
Ballast driver L6574
L6574D
600v 20 amp mosfet
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Ballast driver L6574
Abstract: 200 Amp mosfet CFL DC 12V L6574 L6574D 600v 10 amp mosfet 330nF capacitor ELECTRONIC BALLAST 12v
Text: L6574 CFL/TL BALLAST DRIVER PREHEAT AND DIMMING HIGH VOLTAGE RAIL UP TO 600V dV/dt IMMUNITY ± 50 V/ns IN FULL TEMPERATURE RANGE DRIVER CURRENT CAPABILITY: 250mMA SOURCE 450mA SINK SWITCHING TIMES 80/40ns RISE/FALL WITH 1nF LOAD CMOS SHUT DOWN INPUT UNDER VOLTAGE LOCK OUT
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L6574
250mMA
450mA
80/40ns
L6574
SO16N
DIP16
L6574D
Ballast driver L6574
200 Amp mosfet
CFL DC 12V
L6574D
600v 10 amp mosfet
330nF capacitor
ELECTRONIC BALLAST 12v
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Voltage to Current Converters
Abstract: L6574 L6574D L6574 application zvs driver
Text: L6574 CFL/TL BALLAST DRIVER PREHEAT AND DIMMING PRODUCT PREVIEW HIGH VOLTAGE RAIL UP TO 600V dV/dt IMMUNITY ± 50 V/ns IN FULL TEMPERATURE RANGE DRIVER CURRENT CAPABILITY: 250mMA SOURCE 450mA SINK SWITCHING TIMES 80/40ns RISE/FALL WITH 1nF LOAD CMOS SHUT DOWN INPUT
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L6574
250mMA
450mA
80/40ns
L6574
Voltage to Current Converters
L6574D
L6574 application
zvs driver
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1N5819 SOD-123
Abstract: Reverse polarity pulse plating 1N5819* diode 1N5819 SOD123 1N5819 1N5819-CA2-R 1N5819L 1N5819L-CA2-R QW-R601-008 A1N5819
Text: UNISONIC TECHNOLOGIES CO., LTD 1N5819 DIODE SCHOTTKY BARRIER DIODE FEATURES * Schottky barrier chip * Low power loss, high efficiency. * Low forward voltage drop. * High surge current capability. * For use in low voltage, high frequency inverters, free wheeling
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1N5819
OD-123
1N5819L
1N5819-CA2-R
1N5819L-CA2-R
QW-R601-008
1N5819 SOD-123
Reverse polarity pulse plating
1N5819* diode
1N5819 SOD123
1N5819
1N5819-CA2-R
1N5819L
1N5819L-CA2-R
A1N5819
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1N4148 diode
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1N4148 DIODE HIGH-SPEED SWITCHING DIODE DESCRIPTION The UTC 1N4148 is designed for high-speed switching application in hybrid thick-and thin-film circuits. The devices is manufactured by the silicon epitaxial planar process and packed
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1N4148
1N4148
1N4148L
1N4148-AE3-R
1N4148L-AE3-R
OT-23
1N4148-AL3-R
1N4148L-AL3-R
OT-323
1N4148-CA2-R
1N4148 diode
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D1N4150
Abstract: 1N4150
Text: Transys Electronics L I M I T E D 1N4150 HIGH SPEED SILICON SWITCHING DIODE DO-35 Glass Axial Package FEATURES General Purpose used in Computer and Industrial Applications o ABSOLUTE MAXIMUM RATINGS Ta=25 C unless specified otherwise DESCRIPTION SYMBOL VR
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1N4150
DO-35
DO-35
D1N4150
1N4150
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laser transmitter circuit diagram
Abstract: MAX3263 2 Wavelength Laser Diode circuit laser diode pulsed 6 pin laser diode automatic laser power control PDF PIN laser DIODE DESCRIPTION PIN DIODE DRIVER CIRCUITS MAX3263CAG laser diode driver circuit automatic power control
Text: 19-0432; Rev 0; 9/95 Single +5V, Fully Integrated, 155Mbps Laser Diode Driver _Features ♦ Rise Times Less than 1ns ♦ Differential PECL Inputs ♦ Single +5V Supply ♦ Automatic Power Control ♦ Temperature-Compensated Reference Voltage
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155Mbps
MAX3263CAG
laser transmitter circuit diagram
MAX3263
2 Wavelength Laser Diode
circuit laser diode pulsed
6 pin laser diode
automatic laser power control
PDF PIN laser DIODE DESCRIPTION
PIN DIODE DRIVER CIRCUITS
MAX3263CAG
laser diode driver circuit automatic power control
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1N4148 diode
Abstract: 1N4148L 1N4148 diode SOD 80 1N4148 1N4148 SOT-23 1N4148 sod123 DIODE 1N4148 Sot23 PACKAGE specifications of 1n4148 diode 1N4148 surface mount 1N4148 SOD323
Text: UNISONIC TECHNOLOGIES CO., LTD 1N4148 DIODE HIGH-SPEED SWITCHING DIODE DESCRIPTION The UTC 1N4148 is designed for high-speed switching application in hybrid thick-and thin-film circuits. The devices is manufactured by the silicon epitaxial planar process and packed
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1N4148
1N4148
1N4148L
1N4148G
1N4148-AE3-R
1N4148L-AE3-R
1N4148G-AE3-R
1N4148-AL3-R
1N4148L-AL3-R
1N4148G-AL3-R
1N4148 diode
1N4148L
1N4148 diode SOD 80
1N4148 SOT-23
1N4148 sod123 DIODE
1N4148 Sot23 PACKAGE
specifications of 1n4148 diode
1N4148 surface mount
1N4148 SOD323
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1N60 mosfet
Abstract: 1N60B diode 1n60 1N60G 1N60L 1n60 diode mosfet 1N60 1N60 Diode Equivalent 1N60 1N60 TO92
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET 1 DESCRIPTION FEATURES 1 1 TO-220 TO-220F 1 1 * RDS ON =11.5Ω@VGS = 10V. * Ultra Low gate charge (typical 5.0nC) * Low reverse transfer capacitance (CRSS = typical 3.0 pF)
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OT-223
O-220
QW-R502-052
1N60 mosfet
1N60B
diode 1n60
1N60G
1N60L
1n60 diode
mosfet 1N60
1N60
Diode Equivalent 1N60
1N60 TO92
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1N60AL
Abstract: UTC 1N60AL 1N60A 600v 2A ultra fast recovery diode power mosfet 600v 1N60-A
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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1N60A
1N60A
QW-R502-091
1N60AL
UTC 1N60AL
600v 2A ultra fast recovery diode
power mosfet 600v
1N60-A
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IN3881
Abstract: 1N3880 IN3879-I 1N3879 1N3881 1N3882 1N3883
Text: S E M T R O N INDUSTRIES LTD i 3E 1> • S137SS1 000016M 4 B S L C B T~ O T> -n IN3379-IN3883 series Fast Recovery Rectifier 6 Amp Silicon Diode METAL D04 FEATURES ■ Hermetically sealed D04 ■ Recovery time 200 nS ■ Low overshoot current ■ Normal and reverse polarity
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IN3879-I
-r-03-n
7/16th
S010AXTRAPOLATED
14nSec,
IN3881
1N3880
IN3879-I
1N3879
1N3881
1N3882
1N3883
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ph 41 zener diode
Abstract: No abstract text available
Text: S E M T R O N INDUSTRIES LTD i 3E 1> • S137SS1 000016M 4 B S L C B T ~ O T > - n IN3379-IN3883 s e r i e s Fast Recovery Rectifier 6 Amp Silicon Diode FEATURES METAL D04 ■ Hermetically sealed D04 ■ Recovery time 200 nS ■ Low overshoot current ■ Normal and reverse polarity
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S137SS1
000016M
IN3379-IN3883
7/16th
DO-35
DO-15
DO-201AD
ph 41 zener diode
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SM12CXC170
Abstract: No abstract text available
Text: Ordering Stud base diodes are available in both Normal base cathode and Reverse (base anode) polarity. Use N or R respectively in code according to polarity required, e g. N013 - normal polarity, R013 reverse polarity: (1N3899 - normal, 1N38S9R - reverse).
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1N3899
1N38S9R
SM04PCN046:
SM12CXC170
135mm.
1N3900
1N39C1
1N3902
1N3903
SM12CXC170
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