NOISE PARAMETER FPD750 0.5W POWER PHEMT Search Results

NOISE PARAMETER FPD750 0.5W POWER PHEMT Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TPD4164F		Toshiba Electronic Devices & Storage Corporation	Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31
TPD4164K		Toshiba Electronic Devices & Storage Corporation	Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30
TPD4163K		Toshiba Electronic Devices & Storage Corporation	Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30
TPD4163F		Toshiba Electronic Devices & Storage Corporation	Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31
TPD4207F		Toshiba Electronic Devices & Storage Corporation	Intelligent power device 600V (High voltage PWM DC brushless motor driver)

NOISE PARAMETER FPD750 0.5W POWER PHEMT Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: FPD750 Datasheet v2.3 0.5W POWER PHEMT FEATURES: • • • • • LAYOUT: 27 dBm Linear Output Power at 12 GHz 11.5 dB Power Gain at 12 GHz 14.5 dB Max Stable Gain at 12 GHz 38 dBm Output IP3 50% Power-Added Efficiency GENERAL DESCRIPTION: The FPD750 is	Original	PDF	FPD750 FPD750 22A114. MIL-STD-1686 MIL-HDBK-263.
noise parameter FPD750 0.5w power phemt Abstract: FPD750 MIL-HDBK-263 P100 Text: FPD750 0.5W POWER PHEMT • • DRAIN BOND PAD 2X FEATURES ♦ 27 dBm Linear Output Power at 12 GHz ♦ 11.5 dB Power Gain at 12 GHz ♦ 14.5 dB Maximum Stable Gain at 12 GHz ♦ 38 dBm Output IP3 ♦ 50% Power-Added Efficiency SOURCE BOND PAD (2x) GATE	Original	PDF	FPD750 FPD750 noise parameter FPD750 0.5w power phemt MIL-HDBK-263 P100
Untitled Abstract: No abstract text available Text: FPD750 0.5W POWER PHEMT • • DRAIN BOND PAD 2X FEATURES ♦ 27 dBm Linear Output Power at 12 GHz ♦ 11.5 dB Power Gain at 12 GHz ♦ 14.5 dB Maximum Stable Gain at 12 GHz ♦ 38 dBm Output IP3 ♦ 50% Power-Added Efficiency SOURCE BOND PAD (2x) GATE	Original	PDF	FPD750 FPD750
Untitled Abstract: No abstract text available Text: FPD750 Datasheet v2.4 0.5W POWER PHEMT FEATURES: • • • • • LAYOUT: 27.5 dBm Linear Output Power at 12 GHz 11.5 dB Power Gain at 12 GHz 14.5 dB Max Stable Gain at 12 GHz 38 dBm Output IP3 50% Power-Added Efficiency GENERAL DESCRIPTION: The FPD750	Original	PDF	FPD750 FPD750 OT343 22A114. MIL-STD-1686 MIL-HDBK-263.
FPD750 Abstract: transistor A114 Text: FPD750 Datasheet v3.0 0.5W POWER PHEMT FEATURES: • • • • • LAYOUT: 27.5 dBm Linear Output Power at 12 GHz 11.5 dB Power Gain at 12 GHz 14.5 dB Max Stable Gain at 12 GHz 38 dBm Output IP3 50% Power-Added Efficiency GENERAL DESCRIPTION: The FPD750	Original	PDF	FPD750 FPD750 OT343all 22-A114. MIL-STD-1686 MILHDBK-263. transistor A114
Untitled Abstract: No abstract text available Text: FPD750 FPD7500.5 W Power pHEMT 0.5W POWER pHEMT Package Style: Bare Die Product Description Features The FPD750 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx750μm Schottky barrier gate, defined by high -resolution stepper-based photolithography. The double recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing	Original	PDF	FPD750 FPD7500 FPD750 mx750Î OT343, 12GHz 12GHzlable FPD750-000 FPD750-000SQ
FPD750 Abstract: MIL-HDBK-263 InP HBT transistor DS090609 Text: FPD750 FPD7500.5 W Power pHEMT 0.5W POWER pHEMT Package Style: Bare Die Product Description Features The FPD750 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx750μm Schottky barrier gate, defined by high -resolution stepper-based photolithography. The double recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing	Original	PDF	FPD750 FPD7500 FPD750 25mx750m OT343, 12GHz 38dBm MIL-HDBK-263 InP HBT transistor DS090609