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    NNCD10J Search Results

    NNCD10J Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NNCD10J NEC Original PDF
    NNCD10J NEC DIODE TVS SINGLE 7V 85W 2USM Original PDF

    NNCD10J Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    smd code marking NEC

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 52 10A 38w smd transistor smd mark code 38w SMD 8PIN IC MARKING CODE 251 marking code E1 SMD 5pin 6pin dip SMD mosfet MARKING code T mosfet SMD CODE PACKAGE SOT89 52 10A marking code E2 p SMD Transistor TRANSISTOR SMD MARKING CODE MP
    Text: Power Management Devices Selection Guide > Power MOSFETs > ESD Protection Diodes > Regulators August 2008 www.am.necel.com/powermanagement TABLE OF CONTENTS Contents Low-Voltage Power By Part


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    G18756EU3V0SG00 smd code marking NEC TRANSISTOR SMD CODE PACKAGE SOT89 52 10A 38w smd transistor smd mark code 38w SMD 8PIN IC MARKING CODE 251 marking code E1 SMD 5pin 6pin dip SMD mosfet MARKING code T mosfet SMD CODE PACKAGE SOT89 52 10A marking code E2 p SMD Transistor TRANSISTOR SMD MARKING CODE MP PDF

    NNCD36J

    Abstract: IEC-61000-4-2 NNCD10J NNCD16J
    Text: DATA SHEET ESD NOISE CLIPPING DIODE NNCD5.6J to NNCD36J ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE 2-PIN ULTRA SUPER MINI MOLD FLAT TYPE These products are a diode developed for ESD (Electrostatic 1.4 ± 0.1 Discharge) absorption. Based on the IEC-61000-4-2 test on


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    NNCD36J IEC-61000-4-2 NNCD36J NNCD10J NNCD16J PDF

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


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    PDF

    RJP63k2

    Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
    Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching


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    R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606 PDF

    A CLIPPER CIRCUIT APPLICATIONS

    Abstract: Contact Electronics nncd18 IEC-61000-4-2 NNCD10J NNCD16J NNCD18J NNCD24J NNCD36J DIODE 6j
    Text: DATA SHEET ESD NOISE CLIPPING DIODE NNCD5.6J to NNCD36J ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE 2-PIN ULTRA SUPER MINI MOLD FLAT TYPE DESCRIPTION products (Electrostatic are a Discharge) diode developed absorption. for Based ESD on 1.4 ± 0.1 the 1.0 ± 0.1


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    NNCD36J IEC-61000-4-2 61000-4-2ems, A CLIPPER CIRCUIT APPLICATIONS Contact Electronics nncd18 NNCD10J NNCD16J NNCD18J NNCD24J NNCD36J DIODE 6j PDF

    SC-78

    Abstract: NNCD10J NNCD16J NNCD18J NNCD24J NNCD36J
    Text: データ・シート 静電気ノイズ・クリッピング・ダイオード ESD Noise Clipping Diode NNCD5.6J~NNCD36J 2 ピン超小型ミニモールド(フラットリード)ESD ノイズ・クリッピング・ダイオード NNCD5.6J∼NNCD36J は,ESD ノイズ保護用に開発


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    6JNNCD36J 6JNNCD36J IEC61000-4-2 SC-78 SC-78 D15985JJ3V0DS00 NNCD18J NNCD24J NNCD10J NNCD16J NNCD18J NNCD24J NNCD36J PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    IEC-61000-4-2

    Abstract: NNCD10J NNCD16J NNCD36J DIODE 6j
    Text: DATA SHEET ESD NOISE CLIPPING DIODE NNCD5.6J to NNCD36J ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE 2-PIN ULTRA SUPER MINI MOLD FLAT TYPE These products are a diode developed for ESD (Electrostatic 1.4 ± 0.1 Discharge) absorption. Based on the IEC-61000-4-2 test on


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    NNCD36J IEC-61000-4-2 NNCD10J NNCD16J NNCD36J DIODE 6j PDF

    NNCD36J

    Abstract: SC-78 NNCD10J NNCD16J NNCD18J NNCD24J TAC 2J
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


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    6JNNCD36J 6JNNCD36J IEC61000-4-2 SC-78 SC-78 NNCD18J NNCD24J NNCD36J D15985JJ3V0DS NNCD36J NNCD10J NNCD16J NNCD18J NNCD24J TAC 2J PDF

    NNCD36J

    Abstract: IEC-61000-4-2 NNCD10J NNCD16J NNCD18J NNCD24J
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    2SC5664

    Abstract: 2sc5292 NPN transistor SST 117 D1859 2sK4075 TRANSISTOR 2sc945 2SK4075 PC78L05J 2SK3918 2sk3326
    Text: Process Trend On-Resistance Reduction with UMOS Technology 1.0 1.0 RDS on (UMOS1 = 1.0) Upper value : Nch 30 V class Lower value : Nch 60 V class 0.8 0.8 1st Generation 0.58 0.64 (Trench) 2nd Generation UMOS 1 Lower On-Resistance 0.46 0.53 3rd Generation


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    D18597EJ1V0SG 2SC5664 2sc5292 NPN transistor SST 117 D1859 2sK4075 TRANSISTOR 2sc945 2SK4075 PC78L05J 2SK3918 2sk3326 PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF