JSTD-20C
Abstract: MSAT-N25
Text: MSAT-N25 NIP Diode Attenuator Shunt Element 2012 Plastic Molded DFN Description Features A broadband, High Linearity medium power shunt NIP Attenuator element 1.9 X 1.1 mm DFN package. This device is designed for wireless Telecommunication infrastructure and test instrument applications. It is
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MSAT-N25
A17102
JSTD-20C
MSAT-N25
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Untitled
Abstract: No abstract text available
Text: NIP-86020 Next Generation Network Module 40GbE Fiber Dual QSFP+ Ports The Ne w CASwe ll Ne twork Module 40GbE Fibe r The NIP-86020 leverages Mellanox Ethernet controller connectx-3, fully compliant with 40 GbE network interface. Provides IPv6 Ofloading, IEEE
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NIP-86020
40GbE
40GbE
NIP-86020
40Gbps
AI3-3363
MT27518A0-FCCR-BE
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Metelics
Abstract: No abstract text available
Text: MSAT-N25 NIP Diode Attenuator Shunt Element 2012 Plastic Molded DFN Description Features A broadband, High Linearity medium power shunt NIP Attenuator element 1.9 X 1.1 mm DFN package. This device is designed for wireless Telecommunication infrastructure and test instrument applications. It is
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MSAT-N25
A17102
Metelics
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Untitled
Abstract: No abstract text available
Text: MSAT-N25 NIP Diode Attenuator Shunt Element 2012 Plastic Molded DFN Description Features A broadband, High Linearity medium power shunt NIP Attenuator element 1.9 X 1.1 mm DFN package. This device is designed for wireless Telecommunication infrastructure and test instrument applications. It is
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MSAT-N25
A17102
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METELICS
Abstract: No abstract text available
Text: MSAT-N25 NIP Diode Attenuator Shunt Element 2012 Plastic Molded DFN Description Features A broadband, High Linearity medium power shunt NIP Attenuator element 1.9 X 1.1 mm DFN package. This device is designed for wireless Telecommunication infrastructure and test instrument applications. It is
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MSAT-N25
A17102
METELICS
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PD-2062
Abstract: 2062
Text: SILICON PHOTODIODE CHIPS DEVICE NO. : PD-2062 1. Scope : This specification applies to NIP silicon photodiode chips, Device No. PD-2062 2. Structure : 2-1. Planar type : NIP diode. 2-2. Electrodes : Top side Cathode : Aluminum alloy. Back side ( Anode ) : Gold alloy.
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PD-2062
038mm)
153mm×
voltag25
100uA
905nm
PD-2062
2062
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GC4310
Abstract: GC4311 GC4371 GC4372 GC4373 GC4374 GC4375 GC4200
Text: GC4310 – GC4375 CONTROL DEVICES High Speed NIP Diodes TM RoHS Compliant KEY FEATURES The GC4300 series are high speed anode base NIP diodes made with high resistivity reverse epitaxial silicon material. These diodes are passivated with silicon dioxide for high stability and reliability and have been proven by
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GC4310
GC4375
GC4300
18Ghz
GC4310
GC4311
GC4371
GC4372
GC4373
GC4374
GC4375
GC4200
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Untitled
Abstract: No abstract text available
Text: GC4310 – GC4375 CONTROL DEVICES High Speed NIP Diodes TM RoHS Compliant K EY FEAT U RES The GC4300 series are high speed anode base NIP diodes made with high resistivity reverse epitaxial silicon material. These diodes are passivated with silicon dioxide for high stability and reliability and have been proven by
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GC4310
GC4375
GC4300
18Ghz
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E64380
Abstract: PC3H410NIP PC3H411NIP PC3Q410NIP DIODE C04 06
Text: PC3H41X NIP Series/PC3Q410 NIP PC3Q410NIP Rank mark No mark Conditions IF=±0.5mA VCE=5V Ta=25°C Ic mA Conditions 0.25 to 2.0 IF=±0.5mA VCE=5V Ta=25°C 3 1 2 3 ±0.2 0.4±0.1 H41 2 3 4 1 2 5.3±0.3 2.0 ±0.2 0.1 ±0.1 PC3Q410NIP 10.3±0.3 Internal connection
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PC3H41X
Series/PC3Q410
PC3Q410NIP
PC3Q41
E64380
PC3H410NIP
PC3H411NIP
PC3Q410NIP
DIODE C04 06
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E64380
Abstract: PC3H410NIP PC3H411NIP PC3Q410NIP nip 17
Text: PC3H41X NIP Series/PC3Q410 NIP PC3Q410NIP Rank mark No mark Conditions IF=±0.5mA VCE=5V Ta=25°C Ic mA Conditions 0.25 to 2.0 IF=±0.5mA VCE=5V Ta=25°C 3 1 2 3 ±0.2 0.4±0.1 H41 2 3 4 1 2 5.3±0.3 2.0 ±0.2 0.1 ±0.1 PC3Q410NIP 10.3±0.3 Internal connection
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PC3H41X
Series/PC3Q410
PC3Q410NIP
PC3Q41
E64380
PC3H410NIP
PC3H411NIP
PC3Q410NIP
nip 17
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PC3Q710NIP
Abstract: pc3q711 Low input current Photocoupler E64380 PC3H710NIP PC3H711NIP PC3H712NIP PC3H715NIP PC3Q711NIP
Text: PC3H71X NIP Series/PC3Q71X NIP Series PC3H71xNIP Series Internal connection diagram Anode mark 1 4 4 3 1 2 H71 2 3 4.4±0.2 • Applications 3 4 1 ■ Rank Table Ic mA 0.5 to 3.5 0.7 to 1.75 1.0 to 2.5 0.7 to 2.5 Conditions Model No. Rank mark PC3Q710NIP A or no mark
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PC3H71X
Series/PC3Q71X
PC3H71xNIP
PC3Q710NIP
PC3Q711NIP
PC3Q71xNIP
PC3Q71
pc3q711
Low input current Photocoupler
E64380
PC3H710NIP
PC3H711NIP
PC3H712NIP
PC3H715NIP
PC3Q711NIP
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Untitled
Abstract: No abstract text available
Text: PC3H71X NIP Series/PC3Q71X NIP Series PC3H71xNIP Series Internal connection diagram Anode mark 1 4 4 3 1 2 H71 2 3 4.4±0.2 • Applications 3 4 1 ■ Rank Table Ic mA 0.5 to 3.5 0.7 to 1.75 1.0 to 2.5 0.7 to 2.5 Conditions Model No. Rank mark PC3Q710NIP A or no mark
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PC3H71X
Series/PC3Q71X
PC3Q71X
E64380
PC3H71xNIP
PC3H710NIP
PC3H711NIP
PC3H712NIP
PC3H715NIn
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82546GB
Abstract: ABN-192 bypass intel gigabit ethernet programming duplex display led
Text: NIP-32120 Dual-Port 64-bit Gigabit Ethernet Adaptor with Fiber Bypass Function Dual MM LC fiber ports with fiber-bypass function Switch automatically, and programmable, to bypass mode while power fails and software hangs Software control to switch bypass/non-bypass
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NIP-32120
64-bit
ABN-192
64bit/133MHz
82546GB
10/100/1000Mbps
ABN-182
ABN-192
bypass
intel gigabit ethernet programming
duplex display led
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Untitled
Abstract: No abstract text available
Text: CAR-1001 Luna pier platform, 8 GbE ports x86-DT Architecture FEATURE CPU Up to Dual core 2 SODIMM DDR3 800 4GbE port Support Character/Graphical display module Four PCI-E GbE ports CASwell NIP RJ45 console & Dual USB SPECIFICATION
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CAR-1001
x86-DT
82801HM)
CAR-1001-3411-000
NIP-51040
82580EB
NIP-51240
NIP-52020
82580DB
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NIP1CHP
Abstract: No abstract text available
Text: NIP SERIES DIE N-Channel JFET The NIP Series offers the designer an alternative fortrue high performance analog switching applications. Good breakdown voltage characteristics coupled with low on-resistance and very fast switching make these devices suitable for a wide range of applications. Die
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MIL-STD-750C,
2N5432
SST108
2N5433
2N5434
SST109
SST110
10mA-12V
NIP1CHP
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Untitled
Abstract: No abstract text available
Text: j g S S j:'-' . \ ‘^ HIGH-VOLTAGE PIN AND NIP DIODES 4 7 “ • " * i;,: This series of SP2T and SP3T RF switches uses high voltage PIN and NIP diodes, from the EH 80000 and EH 89000 families, to achieve very low losses and distortions. These switches are usable from 1.5 to 1000 MHz, and to handle pow er levels up to 1000 W.
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SH90101
SH91101
SH90207
SH91207
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varactor multiplier
Abstract: step recovery diodes
Text: MICROWAVE SILICON COMPONENTS CONTENTS • _ _ 2 4 • SYMBOLS _ • HIGH VOLTAGE PIN and NIP DIODES_ 5 - Silicon PIN switching and phase shifting diodes_8
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Untitled
Abstract: No abstract text available
Text: Solderless terminals y B Ring tongue (R-type) Non-insulated- 11 Heavy duty (E/ES type)-25 Of nickel (NIP type)-26 Bent at 90” (L type)- 27
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t------------42
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1n4148 high speed solid state diode
Abstract: No abstract text available
Text: 3ME T> □1117ME D0DD31b 7 INRO S Z -Z ! DRIVERS DEFINED A driver is an interface between digital circuitry (TTL, ECL, etc. and solid state RF/microwave switch circuitry. The switch usually consists of PIN/NIP diodes or Field Effect Transistors. In order to maintain
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1117ME
D0DD31b
1n4148 high speed solid state diode
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U320-2
Abstract: U321 U322 f625-9q2 2N5432 U320 indiana general
Text: Siliconix • VHF Buffer Am plifiers ■ IF Am plifiers U321 Performance Curves NIP See Section 5 B EN EFITS High Gain gfs = 120,000 jumho Typical 11322 • U320 B n-channel JFETs designed for. • Wide Dynamic Range • Low Intermodulation Distortion TO -39
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indiana general
Abstract: U321 U322 U320 f625-9q2
Text: . Performance Curves NIP See Section 5 • VHF Buffer Am plifiers ■ IF Am plifiers U321 designed fo r B Siliconix U320 n-channel JFETs BENEFITS 11322 • High Gain gfs = 120,000 jumho Typical • Wide Dynamic Range • Low Intermodulation Distortion TO -39
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f625-9q2
indiana general
U321
U322
U320
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LM 35
Abstract: No abstract text available
Text: Printed Circuit Board Terminal Blocks LP Series 3.50 mm Pitch LM 3.5/90 Single-level 90° orientation without test points nip ujjju CO N T 0 1.3 Rated Voltage Rated Current Wire Size Strip Length Torque Nm lb. in. Pin Length 300 V 300V 125 V 10 A #28. 14 AWG
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bh 10 g
Abstract: 80156 dh80102 DH80189 89308
Text: T E K E LE C C O M P O N E N T S bflE D \ f| • ^QD3767 G D G D 5 2 3 37T ■ . HIGH-VOLTAGE PIN AND NIP DIODES ■ - SILICON PIN SWITCHING AND PHASE SHIFTING DIODES MEDIUM AND HIGH POWER
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QD3767
bh 10 g
80156
dh80102
DH80189
89308
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alpha diode pin
Abstract: CSN9250 Multijunction
Text: PIN/NIP Switching Diode Multi-Junction Chips ALPHA IN » / SEMICONDUCTOR 4ÔE D • GSÖS443 D0G12D7 S T T ■ ALP Features ■ ■ ■ ■ ■ ■ Low Capacitance,.015 pF Low Forward Resistance,1.5 Ohms Fast Switching, 10-20 ns Low Thermal Resistance Full Area Bonding Metal
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D0G12D7
A/-10
alpha diode pin
CSN9250
Multijunction
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