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NGB8206NG Price and Stock

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Rochester Electronics LLC NGB8206NG IGBT 390V 20A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NGB8206NG	Tube			592	1 - 10 - 100 - 1000 $0.51 10000 $0.51	Buy Now
onsemi NGB8206NG IGBT 390V 20A 150W D2PAK
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DigiKey	NGB8206NG	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	NGB8206NG		1,788		1	1 $0.4875 10 $0.4875 100 $0.4583 1000 $0.4144 10000 $0.4144	Buy Now
Aptina Imaging NGB8206NG Trans IGBT Chip N-CH 390V 20A 150W 3-Pin(2+Tab) D2PAK Tube
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Verical	NGB8206NG		1,443		684	1 - 10 - 100 - 1000 $0.518 10000 $0.518	Buy Now

NGB8206NG Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NGB8206NG		On Semiconductor	Ignition IGBT 20 A, 350 V, N-Channel D2PAK		Original	PDF
NGB8206NG		On Semiconductor	NGB8206 - TRANSISTOR 20 A, 390 V, N-CHANNEL IGBT, LEAD FREE, CASE 418B-04, D2PAK-3, Insulated Gate BIP Transistor		Original	PDF

NGB8206NG Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
418B-04 Abstract: GB8206 Text: NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	PDF	NGB8206N, NGB8206AN NGB8206N/D 418B-04 GB8206
8206NG Abstract: NGB8206 Text: NGB8206N Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and	Original	PDF	NGB8206N NGB8206N/D 8206NG NGB8206
Untitled Abstract: No abstract text available Text: NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	PDF	NGB8206N, NGB8206AN NGB8206N/D
GB8206 Abstract: NGB8206A NGB8206NG Text: NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	PDF	NGB8206N, NGB8206AN NGB8206N/D GB8206 NGB8206A NGB8206NG
GB8206 Abstract: No abstract text available Text: NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	PDF	NGB8206N, NGB8206AN NGB8206N/D GB8206
8206NG Abstract: GB8206N NGB8206N NGB8206NG NGB8206NT4 NGB8206NT4G Text: NGB8206N Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and	Original	PDF	NGB8206N NGB8206N/D 8206NG GB8206N NGB8206N NGB8206NG NGB8206NT4 NGB8206NT4G