NGB8206AN Search Results

NGB8206AN Price and Stock

Filter by Manufacturer


Rochester Electronics LLC NGB8206ANT4G IGBT, 20A, 390V, N-CHANNEL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NGB8206ANT4G	Bulk			417	1 - 10 - 100 - 1000 $0.72 10000 $0.72	Buy Now
Littelfuse Inc NGB8206ANT4G IGBT 390V 20A 150W D2PAK3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NGB8206ANT4G	Reel			800	1 - 10 - 100 - 1000 $0.68575 10000 $0.68575	Buy Now
Littelfuse Inc NGB8206ANTF4G IGBT 390V 20A 150W D2PAK3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NGB8206ANTF4G	Reel			700	1 - 10 - 100 - 1000 $1.13117 10000 $1.1	Buy Now
Rochester Electronics LLC NGB8206ANTF4G IGBT 390V 20A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NGB8206ANTF4G	Bulk			237	1 - 10 - 100 - 1000 $1.27 10000 $1.27	Buy Now
Littelfuse Inc NGB8206ANSL3G IGBT 390V 20A 150W D2PAK3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NGB8206ANSL3G	Tube			50	1 - 10 - 100 $0.9752 1000 $0.9752 10000 $0.9752	Buy Now

Find more NGB8206AN price and stock on Findchips.com

NGB8206AN Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NGB8206ANSL3G		On Semiconductor	NGB8206 - TRANSISTOR IGBT, Insulated Gate BIP Transistor		Original	PDF
NGB8206ANT4G		On Semiconductor	NGB8206 - TRANSISTOR 20 A, 390 V, N-CHANNEL IGBT, LEAD FREE, CASE 418B-04, D2PAK-3, Insulated Gate BIP Transistor		Original	PDF
NGB8206ANTF4G		On Semiconductor	NGB8206 - TRANSISTOR IGBT, Insulated Gate BIP Transistor		Original	PDF

NGB8206AN Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
418B-04 Abstract: GB8206 Text: NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	PDF	NGB8206N, NGB8206AN NGB8206N/D 418B-04 GB8206
Untitled Abstract: No abstract text available Text: NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	PDF	NGB8206N, NGB8206AN NGB8206N/D
GB8206 Abstract: NGB8206A NGB8206NG Text: NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	PDF	NGB8206N, NGB8206AN NGB8206N/D GB8206 NGB8206A NGB8206NG
GB8206 Abstract: No abstract text available Text: NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	PDF	NGB8206N, NGB8206AN NGB8206N/D GB8206