QUADRAX CONNECTOR
Abstract: QUADRAX ts 083
Text: Environmental Connectors 257-459 Plug and Wall Mount Quadrax Connector MIL-DTL-38999 Series III Type Basic Number Shell Size 09 21 23 25 Finish M - Electroless Nickel NF - O.D. Cadmium over Nickel 257 - 459 NF Contact Style P - Pin insert less contacts *
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MIL-DTL-38999
QUADRAX CONNECTOR
QUADRAX
ts 083
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Glenair quadrax
Abstract: No abstract text available
Text: Twinax and Quadrax Connectors 257-459 06 or (S7) Plug or Wall Mount Receptacle Quadrax Connector MIL-DTL-38999 Series III Type Basic Number Shell Size 09 21 23 25 Finish M - Electroless Nickel NF - O.D. Cadmium over Nickel 257 - 459 NF Insert Arrangement
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MIL-DTL-38999
Glenair quadrax
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Twinax and Quadrax Connectors
Abstract: 257-459 (06) or (S7)
Text: Twinax and Quadrax Connectors 257-459 06 or (S7) Plug or Wall Mount Receptacle Quadrax Connector MIL-DTL-38999 Series III Type Basic Number Shell Size 09 21 23 25 Finish M - Electroless Nickel NF - O.D. Cadmium over Nickel 257 - 459 NF Insert Arrangement
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MIL-DTL-38999
Twinax and Quadrax Connectors
257-459 (06) or (S7)
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M85045
Abstract: mil-i-23053 mil-i-23053/5 bandit 600-052 sleeving 4203L MIL-I-2305
Text: Backshells and Accessories 189-015 Environmental Banding Backshell for Multichannel M85045 Shipboard Fiber Optic Cable for Use with MIL-PRF-28876 or Glenair 180-040 Connectors 189-015 NF 13 05-3 B Product Series Band 600-052 Supplied Omit if not required
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M85045
MIL-PRF-28876
MIL-I-23053/4
MIL-I-23053/5
1000-Natural
4203L-Natural
mil-i-23053
bandit 600-052
sleeving
4203L
MIL-I-2305
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M85045
Abstract: MIL-I-2305 mil-i-23053/5 torlon 1000-Natural mil-i-23053 600-052 M85045/M85045
Text: MIL-PRF28876 189-015 Environmental Banding Backshell for Multichannel M85045 Shipboard Fiber Optic Cable for Use with MIL-PRF-28876 or Glenair 180-040 Connectors Finish Table II Product Series 189 - 015 Basic Part Number C NF Dash Number (Table III) 13 05 - 3
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MIL-PRF28876
M85045
MIL-PRF-28876
MIL-I-23053/4
MIL-I-2305/4
MIL-I-23053/5
1000-Natural
4203L-Natural
MIL-I-2305
torlon
1000-Natural
mil-i-23053
600-052
M85045/M85045
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NE38018 V68
Abstract: transistor NEC D 587 NE38018 NE38018-T1 NE38018-T2 VP15-00-3 37792
Text: PRELIMINARY DATA SHEET Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES Super Low noise figure & High Associated Gain NF = 0.55 dB typ. Ga = 14.5 dB typ. OIP3 = 22 dBm V67 , OIP3 = 23 dBm (V68) typ. at f = 2 GHz
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NE38018
NE38018-T1
NE38018-T2
NE38018 V68
transistor NEC D 587
NE38018
NE38018-T1
NE38018-T2
VP15-00-3
37792
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NE32400
Abstract: NE32400M NE32400N
Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32400 FEATURES NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz GA • LG = 0.25 µm, WG = 200 µm DESCRIPTION The NE32400 is a pseudomorphic Hetero-Junction FET chip
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NE32400
NE32400
24-Hour
NE32400M
NE32400N
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ne324
Abstract: NE32400
Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32400 FEATURES NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz 24 3 GA • LG = 0.25 µm, WG = 200 µm DESCRIPTION The NE32400 is a pseudomorphic Hetero-Junction FET chip
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NE32400
NE32400
24-Hour
ne324
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HYM5328104B
Abstract: HYM532814B HYM532810 HYM532814
Text: •HYUNDAI HYM532814B M-Series 8M x 32-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT D ESCRIPTION The HYM5328104B is a 8M x 32-bit EDO mode CMOS DRAM module consisting of sixteen HY5117404B in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 nF and 0.01 nF decoupling capacitors are
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HYM532814B
32-bit
HYM5328104B
HY5117404B
HYM5328148M/BSLM/BTM/BSLTM
HYM532814BMG/BSLMG/B7MG/BSLTMG
100B6
002f3
G0GS47S
HYM532810
HYM532814
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Thomson-CSF capacitors
Abstract: Thomson-CSF POLYESTER capacitors Thomson-CSF passive components Thomson-CSF film capacitors
Text: THOMD004 FILM CHIP CAPACITORS CF serie Description : Film chip capacitor, using a mold-less construction and stacked metallized Polyester with high melting point. General Characteristics Capacitance range E6 serie 1 nF to 4.7 fxF Tolerance on capacitance
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THOMD004
Thomson-CSF capacitors
Thomson-CSF POLYESTER capacitors
Thomson-CSF passive components
Thomson-CSF film capacitors
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Motorola 1N4007
Abstract: motorola MRF6 mrf6 transistor 228 npn motorola
Text: MOTOROLA Order this document by MRF6414PHT/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 PHOTOMASTER NPN Silicon RF Pow er TVansistor C1, C2, C5, C6 C9 D1, C3 C7 C8 D2 100 pF, Chip Capacitor, Hight Q 330 pF, Chip Capacitor, 0805 10 nF, Chip Capacitor, 0805
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MRF6414PHT/D
MRF6414
1N4007
SD135
-------------------------------2PHX34731Q
Motorola 1N4007
motorola MRF6
mrf6
transistor 228 npn motorola
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R-141082
Abstract: No abstract text available
Text: SAFETY COAXIAL CONNECTORS SA FETY BNC : all accessible parts are made of insulated materials 100% intermateable with STANDARD BNC. Standards Characteristics : IEC 348 class II, VDE 411 and NFC 20 010 tests CECC 22120 / IEC 169.8 / MIL-C-39012 / BS9210 / IEEE 802-3 / NF-UTE 93564
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MIL-C-39012
BS9210
5mm/50
DC-500
--40C
R-141082
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ATF-35176
Abstract: ATF-3507 ATF-35076 ATF-21170 ATF-44100 ATF26550 ATF-13036 ATF-10170 ATF-35576 ATF-35376
Text: Gallium Arsenide GaAs Field Effect Transistors (FETs) Low Noise GaAs FETs (Typical Specifications at +25°C Case Temperature) Part Number Gate Width Optimum Freq. Range (GHz) Test Freq. (GHz) NF. (dB) (dB) PldB (dBm) 0.5-12 2-18 0.5-6 0.5-10 4 12 4 4 0.5
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ATF-10100
ATF-13100
ATF-21100
ATF-25100
ATF-10170
ATF-13170
ATF-21170
ATF-25170
ATF-10136
ATF-10236
ATF-35176
ATF-3507
ATF-35076
ATF-44100
ATF26550
ATF-13036
ATF-35576
ATF-35376
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NEC 3536
Abstract: No abstract text available
Text: DATA SHEET GaAs MES FET NE76118 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION NE76118 is a n-channel GaAs MES FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES • Low noise figure NF = 0.8 dB TYP. at f = 2 GHz •
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NE76118
NE76118
NE76118-T1
NE76118-T2
NEC 3536
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21134 015
Abstract: nec K 3570 T 318 TE 2395 marking v67 of ic ST 4051
Text: PRELIMINARY DATA SHEET_ Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES O Super Low noise figure & High Associated Gain NF = 0.55 dB typ. Ga = 14.5 dB typ. OlPs = 22 dBm V67 , OlPs = 23 dBm (V68) typ. at f = 2 GHz
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NE38018
NE38018-T1
NE38018-T2
21134 015
nec K 3570
T 318 TE 2395
marking v67
of ic ST 4051
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Untitled
Abstract: No abstract text available
Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET SPACE QUALIFIED NE24200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, I ds = 10m A FEATURES • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz 24 • HIGH ASSOCIATED GAIN: Ga = 11.0 dB typical a tf = 12 GHz
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NE24200
NE24200
24-Hour
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Untitled
Abstract: No abstract text available
Text: NEC ULTRA LOW NOISE PSEUDOMORPHIC HJ FET l>,co^ uu FEATURES NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Voss 2 V, Ids = 10 mA • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz • HIGH ASSOCIATED GAIN: G a = 11.0 dB typical at f = 12 GHz m •
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E32400
IS12I
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HE901-HE902
Abstract: HE901 HE902
Text: Serie 254 double face - Pas 2,54mm Norme NF C/UTE 93-423 - Modele HE901 DESCRIPTION DES PROLONGATEURS Les prolongateurs femelles sont enfichables ou encartables. -enfichables, iIs sont accouples avec, les connecteurs males decrits pages 13 a 16. - encartables, la carte imprimee de 1,6 ± 0,2 mm d'epaisseur est inseree directement.
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HE901
254DFIM
HE901
HE902
HE901-HE902
HE902
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Untitled
Abstract: No abstract text available
Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, Ids = 10 mA FEATURES_ . VERY LOW NOISE FIGURE: NF = 0 .6 dB typical at f = 12 G H z • HIGH ASSOCIATED GAIN: G a = 1 1 .0 dB typical at f = 12 G H z
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NE24200
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063 793
Abstract: transistor v63
Text: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES 2.1 ± 0.2 Low noise figure 1.25 ±0.1 NF = 0.6 dB TYP. at f = 2 GHz High associated gain
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NE34018
NE34018
WS60-00-1
IR30-00-3
063 793
transistor v63
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Untitled
Abstract: No abstract text available
Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32400 FEATURES NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vds = 2 V, Ids = 10 mA • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz • HIGH ASSOCIATED GAIN: Ga = 11.0 dB typical at f = 12 GHz m • LG = 0.25 urn, Wg = 200 |im
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NE32400
NE32400
str11
IS12I
lS22l
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Untitled
Abstract: No abstract text available
Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32400 FEATURES NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V d s = 2 V, Ids = 10 mA • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz • HIGH ASSOCIATED GAIN: Ga = 11.0 dB typical at f = 12 G Hz • LG = 0.25 Jim, Wg = 200 Jim
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NE32400
NE32400
24-Hour
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES O Super Low noise figure & High Associated Gain NF = 0.55 dB typ. G a = 14.5 dB typ. O IP 3 = 22 dBm V67 , O IP 3 = 23 dBm (V68) typ. at f = 2 GHz
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NE38018
NE38018-T1
NE38018-T2
Rn/50
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Untitled
Abstract: No abstract text available
Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET SPACE QUALIFIED FEATURES NE24200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V , I d s = 1 0 mA • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz • HIGH ASSOCIATED GAIN: m ;o < G a = 11.0 dB typical at f = 12 GHz
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NE24200
NE24200
IS21I
IS12I
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