Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    NESY130 Search Results

    NESY130 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NESY130 New England Semiconductor POWER MOSFET N CHANNEL Scan PDF
    NESY130 New England Semiconductor TRANS MOSFET N-CH 100V 11A 3TO-257 Scan PDF

    NESY130 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CP666

    Abstract: CP640 TO-213AA CP664
    Text: FETS Page 1 of 7 Next Home Package Device Type BVDSS Volts RDS on @ 0.5 ID Ohms ID Continuous Amps IDM Pulse Drain Current Amps TO-5 NES130/5 100 0.18 8 32 25 TO-5 NES230/5 200 0.40 5.5 22 25 TO-213AA/66 NSFJ1000 1000 4.2 3.0 10 70 TO-213AA/66 NSFJ120 100


    Original
    PDF O-213AA/66 CP666 CP640 TO-213AA CP664

    K120

    Abstract: NESY130 OC44 OC-44 sm43a
    Text: T im es ? NESY130 POWER MOSFET N CHANNEL • R E P E T IT IV E A V A L A N C H E R A T IN G S • L O W R DS(0 n • L O W D R IV E R E Q U IR E M E N T • D Y N A M IC d v / d t R A T IN G ABSOLUTE MAXIMUM RATINGS (Tc = 25 C unless otherwise noted) SYMBOL


    OCR Scan
    PDF NESY130 O-257 oc-446-1158 K120 NESY130 OC44 OC-44 sm43a

    Untitled

    Abstract: No abstract text available
    Text: Back to FETs NESY130 POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW R DS 0 n • LOW DRIVE REQUIREM ENT • DYNAMIC d v / d t RATING ABSOLUTE MAXIMUM RATINGS (Tc = 25 C unless otherwise noted) SYMBOL PARAMETERS / TEST CONDITIONS Drain-Source Voltage


    OCR Scan
    PDF NESY130