8712 RESISTOR
Abstract: NES1823M-180
Text: DATA SHEET GaAs FET NES1823M-180 180 W L, S-BAND PUSH-PULL POWER GaAs FET DESCRIPTION The NES1823M-180 is a 180 W push-pull type GaAs FET designed for high power transmitter applications for IMT2000 base station systems. It is capable of delivering 180 W of output power CW with high linear gain, high
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NES1823M-180
NES1823M-180
IMT2000
8712 RESISTOR
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NES1823S-90
Abstract: No abstract text available
Text: DATA SHEET GaAs FET NES1823S-90 90 W L, S-BAND SINGLE-END POWER GaAs FET DESCRIPTION The NES1823S-90 is a 90 W single-end type GaAs FET designed for high power transmitter applications for IMT2000 base station systems. It is capable of delivering 90 W of output power CW with high linear gain, high efficiency
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NES1823S-90
NES1823S-90
IMT2000
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nec 0882
Abstract: transistor NEC D 882 p nec d 882 p datasheet nec d 882 p NES1823P-45 1658 NEC
Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NES1823P-45 45 W L, S-BAND PUSH-PULL POWER GaAs MES FET DESCRIPTION The NES1823P-45 is a 45 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS, PHS and IMT2000 base station systems. It is capable of delivering 45 W of output power CW with high
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NES1823P-45
NES1823P-45
IMT2000
nec 0882
transistor NEC D 882 p
nec d 882 p datasheet
nec d 882 p
1658 NEC
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AN1032
Abstract: NES1823P-70
Text: PRELIMINARY DATA SHEET 70W L-S BAND TWIN POWER GaAs MESFET FEATURES NES1823P-70 OUTLINE DIMENSIONS Units in mm • • HIGH OUTPUT POWER: 70 W TYP HIGH POWER ADDED EFFICIENCY: 40 % TYP • HIGH LINEAR GAIN: 11 dB TYP at 2.2 GHz PACKAGE OUTLINE T-86 45°
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NES1823P-70
NES1823P-70
IMT2000
24-Hour
AN1032
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NES1823M-45
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET GaAs FET NES1823M-45 45 W L, S-BAND PUSH-PULL POWER GaAs FET DESCRIPTION The NES1823M-45 is a 45 W push-pull type GaAs FET designed for high power transmitter applications for IMT2000, PCS, and PDC base station systems. It is capable of delivering 45 W of output power CW with high linear
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NES1823M-45
NES1823M-45
IMT2000,
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imt 901
Abstract: nec k 813 NES1823P-30
Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NES1823P-30 30 W L-S BAND PUSH-PULL POWER GaAs MES FET DESCRIPTION The NES1823P-30 is a 30 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS and IMT 2000 base station systems. It is capable of delivering 30 watts of output power CW with high linear
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NES1823P-30
NES1823P-30
imt 901
nec k 813
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transistor NEC D 882 p
Abstract: nec d 882 p datasheet nec d 882 p nec d 882 p transistor transistor NEC D 587 IMT-2000 NES1823P-100 615t 2C156
Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs MESFET NES1823P-100 100W L-BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1823P-100 is a 100 W push-pull type GaAs MESFET designed for high power transmitter applications for IMT-2000 and PCS/PCN base station systems. It is capable of delivering 100 watts of output power with high linear
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NES1823P-100
NES1823P-100
IMT-2000
transistor NEC D 882 p
nec d 882 p datasheet
nec d 882 p
nec d 882 p transistor
transistor NEC D 587
615t
2C156
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NES1823P-50
Abstract: gaas mes nec 5703 IDA45
Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NES1823P-50 50 W L-BAND PUSH-PULL POWER GaAs MES FET DESCRIPTION The NES1823P-50 is a 50 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS, PHS, and IMT2000 base station systems. It is capable of delivering 50 W of output power CW with high
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NES1823P-50
NES1823P-50
IMT2000
gaas mes
nec 5703
IDA45
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NES1823M-240
Abstract: j3780
Text: DATA SHEET GaAs FET NES1823M-240 240 W L, S-BAND PUSH-PULL POWER GaAs FET DESCRIPTION The NES1823M-240 is a 240 W push-pull type GaAs FET designed for high power transmitter applications for IMT2000 base station systems. It operates at 12 V and is capable of delivering 240 W of output power CW with high
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NES1823M-240
NES1823M-240
IMT2000
j3780
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RF MESFET S parameters
Abstract: high power microwave transmitter NES1823P-30
Text: PRELIMINARY DATA SHEET 30W L-S BAND PUSH-PULL POWER GaAs MESFET FEATURES • • • • NES1823P-30 OUTLINE DIMENSIONS Units in mm HIGH OUTPUT POWER: 30 W TYP HIGH POWER ADDED EFFICIENCY: 40 % TYP @ VDS = 10 V, ID = 4 A, f = 2.2 GHz HIGH LINEAR GAIN: 13 dB TYP
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NES1823P-30
NES1823P-30
24-Hour
RF MESFET S parameters
high power microwave transmitter
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NEC 952
Abstract: NES1823P-140
Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NES1823P-140 140 W L, S-BAND PUSH-PULL POWER GaAs MES FET DESCRIPTION The NES1823P-140 is a 140 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS, PHS and IMT2000 base station systems. It is capable of delivering 140 W of output power CW with
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NES1823P-140
NES1823P-140
IMT2000
NEC 952
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NEC 743 a
Abstract: transistor NEC D 586 NES1823P-70
Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NES1823P-70 70 W L, S-BAND PUSH-PULL POWER GaAs MES FET DESCRIPTION The NES1823P-70 is a 70 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS, PHS and IMT2000 base station systems. It is capable of delivering 70 W of output power CW with high
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NES1823P-70
NES1823P-70
IMT2000
NEC 743 a
transistor NEC D 586
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NES1823M-180-A
Abstract: No abstract text available
Text: DATA SHEET GaAs FET NES1823M-180 180 W L, S-BAND PUSH-PULL POWER GaAs FET DESCRIPTION The NES1823M-180 is a 180 W push-pull type GaAs FET designed for high power transmitter applications for IMT2000 base station systems. It operates at 12 V and is capable of delivering 180 W of output power CW with high
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NES1823M-180
NES1823M-180
IMT2000
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SSPA s-band
Abstract: SSPA C Band 10E6 NES1823P-100 P1408 3 GHz 50 w sspa
Text: Application Note NES1823P-100 100 W L/S-Band Power GaAs FET Document No. P14088EJ1V0AN00 1st edition Date Published March 1999 N CP(K) Printed in Japan 1999 [MEMO] 2 Application Note P14088EJ1V0AN00 THis application note outlines general applications of the products it covers, and introduces a design example of an
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NES1823P-100
P14088EJ1V0AN00
be88-6130
SSPA s-band
SSPA C Band
10E6
NES1823P-100
P1408
3 GHz 50 w sspa
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IMT-2000
Abstract: NES1823S-45
Text: DATA SHEET GaAs FET NES1823S-45 45 W L, S-BAND SINGLE-END POWER GaAs FET DESCRIPTION The NES1823S-45 is a 45 W single-end type GaAs FET designed for high power transmitter applications for WCDMA IMT-2000 base station systems. It operates at 12 V and is capable of delivering 45 W of output power (CW)
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NES1823S-45
NES1823S-45
IMT-2000)
IMT-2000
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276-145
Abstract: AN1032 NES1823P-45
Text: PRELIMINARY DATA SHEET 45W L-S BAND TWIN POWER GaAs MESFET FEATURES • • • NES1823P-45 OUTLINE DIMENSIONS Units in mm HIGH OUTPUT POWER: 45 W TYP HIGH POWER ADDED EFFICIENCY: 45 % TYP at VDS = 12 V, IDSQ = 4 A, f = 2.2 GHz HIGH LINEAR GAIN: 12 dB TYP
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NES1823P-45
NES1823P-45
24-Hour
276-145
AN1032
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J3780
Abstract: IMT-2000 NES1823M-240 J4083
Text: DATA SHEET GaAs FET NES1823M-240 240 W L, S-BAND PUSH-PULL POWER GaAs FET DESCRIPTION The NES1823M-240 is a 240 W push-pull type GaAs FET designed for high power transmitter applications for IMT-2000 base station systems. It is capable of delivering 240 W of output power CW with high linear gain, high
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NES1823M-240
NES1823M-240
IMT-2000
J3780
J4083
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mobile phone basic block diagram
Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .
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G0706
PX10020EJ41V0PF
mobile phone basic block diagram
PG2158T5K
2SC3357/NE85634
microwave Duplexer
NE5510279A
UPC8236
NE3517S03
UPG2156
NE662M04
SW SPDT
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nec k 813
Abstract: NES1823P-30
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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transistor NEC D 587
Abstract: IMT-2000 NES1823P-100
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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NES1823P-50
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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nec mosfet marked v75
Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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G0706
PX10727EJ02V0PF
nec mosfet marked v75
NEC Ga FET marking code T79
FET marking code g5d
marking code C1G mmic
LGA 1155 PIN diagram
PB1507
marking code C1E mmic
marking code C1H mmic
PC8230TU
MMIC SOT 363 marking CODE 77
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MESFET S parameter data sheet
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs MESFET NES1823P-100 100W L-BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1823P-100 is a 100 W push-pull type GaAs MESFET designed for high power transmitter applications for IMT-2000 and PCS/PCN base station systems. It is capable of delivering 100 watts of output power with high linear
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NES1823P-100
NES1823P-100
IMT-2000
MESFET S parameter data sheet
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 100W L-BAND TWIN POWER GaAs MESFET NES1823P-100 OUTLINE DIMENSIONS Units in mm FEATURES • HIGH OUTPUT POWER: 1 0 0 W T Y P • HIGH LINEAR GAIN: 11 d B T Y P • HIGH DRAIN EFFICIENCY: 50 % TYP @ V ds = 10 V, I d = 6 A, f = 2.2 GHz
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NES1823P-100
NES1823P-100
24-Hour
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