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    NEC NE3 Search Results

    NEC NE3 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    D12320VTE20V Renesas Electronics Corporation Microcontrollers for General Purpose System Control Applications (Non Promotion), TFQFP, / Visit Renesas Electronics Corporation
    D12324SVF25V Renesas Electronics Corporation Microcontrollers for General Purpose System Control Applications (Non Promotion), FQFP, /Tray Visit Renesas Electronics Corporation
    D12373RVFQ33V Renesas Electronics Corporation Microcontrollers for General Purpose System Control Applications (Non Promotion), LQFP, /Tray Visit Renesas Electronics Corporation
    D12670VFC33V Renesas Electronics Corporation High-end Microcontrollers for Automotive Control and Factory Automation Applications (Non Promotion), FQFP, /Tray Visit Renesas Electronics Corporation
    DF2111BVT10BV Renesas Electronics Corporation Microcontrollers for Office Equipment Applications (Non Promotion) Visit Renesas Electronics Corporation

    NEC NE3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MRF947T1 equivalent

    Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
    Text: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi


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    PDF 2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545 2SC3583 2SC3585 2SC4093 2SC4094 MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L

    SMD M05 sot

    Abstract: NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters
    Text: NEC XXXXXXXXXX NEC RF & Wireless Semiconductors 2008 NEC CEL & NEC CONTENTS California Eastern Laboratories serves designers, OEMs GaAs RFIC Switches 3 and contract manufacturers in the RF & Wireless, Mobile- Small Signal GaAs FETs 4 comm, Multimedia, Broadband Communications, Industrial


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    PDF 08/2M SMD M05 sot NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters

    UAA 1006

    Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
    Text: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH


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    PDF D-40472 I-20124 I-00139 D-30177 GB-MK14 D-81925 S-18322 F-78142 E-28007 UAA 1006 manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


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    nec b1007

    Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
    Text: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,


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    PDF NE68018 NE680 UPA801TC UPA808TC UPA821TC UPA826TC UPA861TD UPA831TC UPA862TD UPA835TC nec b1007 T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G

    NE70083

    Abstract: NE372800 AN83901 NE372 NE71083 Matching Transformer - line matching transformed AN-PF-1007
    Text: California Eastern Laboratories AN-PF-1007 APPLICATION NOTE Designing High Power GaAs FET Amplifiers Using Single Cell FET Parameters INTRODUCTION Many different power GaAs FET die types are available from NEC. With the recent development of the NE430, NE345L,


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    PDF AN-PF-1007 NE430, NE345L, NE372 24-Hour NE70083 NE372800 AN83901 NE71083 Matching Transformer - line matching transformed AN-PF-1007

    NE70083

    Abstract: NE372 planar transformer theory small signal GaAs FET x-band microwave fet NE71083 DLI-1988-1
    Text: California Eastern Laboratories AN-PF-1007 APPLICATION NOTE Designing High Power GaAs FET Amplifiers Using Single Cell FET Parameters INTRODUCTION Many different power GaAs FET die types are available from NEC. With the recent development of the NE430, NE345L,


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    PDF AN-PF-1007 NE430, NE345L, NE372 NE70083 planar transformer theory small signal GaAs FET x-band microwave fet NE71083 DLI-1988-1

    zigbee antenna diversity

    Abstract: transistor 2.4GHz amplifier schematic wifi transistor 2.4GHz amplifier schematic 2.4 ghz transistor wifi amplifier wifi schematic in mobile NE3508M04 SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR uPG2015TB uPG2150T5L SCHEMATIC DIAGRAM OF 2.4 GHZ WIFI RF POWER
    Text: NEC / CEL Components For 2.4GHz ZigBee and ISM Band Applications 2008 v.6 Components for 2.4 GHz Designs Bluetooth, Bluetooth, ZigBee, ZigBee, ISM ISM Band Band Transmitters Transmitters SPDT Switches*: uPG2214TB/TK uPG2030TK uPG2179TB uPG2158T5K uPG2012TK


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    PDF uPG2214TB/TK uPG2030TK uPG2179TB uPG2158T5K uPG2012TK uPG2015TB NESG3031M05/M14 NE662M04 NE3508M04 uPC8233TK zigbee antenna diversity transistor 2.4GHz amplifier schematic wifi transistor 2.4GHz amplifier schematic 2.4 ghz transistor wifi amplifier wifi schematic in mobile NE3508M04 SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR uPG2150T5L SCHEMATIC DIAGRAM OF 2.4 GHZ WIFI RF POWER

    m04 SMD

    Abstract: nec smd code NE3508M04 NE321000 NE3514 NE3512S02 NE27200 ne3210s01 GHZ micro-X Package NE3509M04
    Text: www.cel.com NEC Small Signal GaAs FETS Low Noise Devices Typical Specifications @ TA = 25°C Recommended Gate Gate Test NF/GA Bias Frequency Part Length Width Range Frequency VDS IDS NFOPT GA Number µm (µm) (GHz) (GHz) (V) (mA) (dB) (dB) Power Bias Chip /


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    PDF NE27200 NE321000 NE3210S01 NE4210S01 NE3503M04 NE3508M04 m04 SMD nec smd code NE3508M04 NE321000 NE3514 NE3512S02 NE27200 ne3210s01 GHZ micro-X Package NE3509M04

    NE3517S03

    Abstract: NE3517S03-T1C rogers 5880 HS350 NE3517S03-T1D-A
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    NE3510M04

    Abstract: transistor RF S-parameters HS350 NE3510M04-A NE3510M04-T2 NE3510M04-T2-A
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    KA 75008

    Abstract: cg208 APU2 diode SKE 350a SKE 350A a006 30-0005 3106 u7 uPD7500* instruction set transistor f423
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF d88-6130 KA 75008 cg208 APU2 diode SKE 350a SKE 350A a006 30-0005 3106 u7 uPD7500* instruction set transistor f423

    NE38018 V68

    Abstract: NEC Ga FET marking L HS350 NE38018 NE38018-T1 VP215
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    NE332

    Abstract: NE33284AS nec k 813 s11 diode shottky IEI1207 NE33284A NE33284A-SL NE33284A-T1 NE33284A-T1A
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    NEC 41-A 002

    Abstract: NE333 NE33387 ne33353 NE33300 NE33353B NE33353E
    Text: NEC/ CALIFORNIA NEC SbE T> m 1,427414 0GQE3a2 IT I HNECC NE33300 NE33353E NE33353B NE33387 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • 450 mW LINEAR POWER OUTPUT at 2 GHz Com m on-Em ilter The NE333 series o f NPN silico n transistors Is designed for


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    PDF b427M14 NE33300 NE33353E NE33353B NE33387 NE333 NEC 41-A 002 NE33387 ne33353

    NE99532

    Abstract: 2sc3358 NE3005B20 NE85637 NE4201 NE1010E 2SC3358 transistor ne3005b-20 NE1005E NEC 8563
    Text: NEC/ CALIFORNIA 1SE D bMs?m4 D D o m a i a T IM S - T - it- t r NEC NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES T'3h21 FEATURES DESCRIPTION AND APPLICATIONS • H IG H G A IN B A N D W ID T H P R O D U C T : f r = 7 G H z The NE856 series of NPN epitaxial silicon transistors Is de­


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    PDF NE856 NE99532 NE32700 NE32702 NE32708 NE32740A NE32740B 2sc3358 NE3005B20 NE85637 NE4201 NE1010E 2SC3358 transistor ne3005b-20 NE1005E NEC 8563

    Untitled

    Abstract: No abstract text available
    Text: NEC SUPER LOW NOISE HJ FET FEATURES NE329S01 & a s s o c ia t e d GAIN vs. FREQUENCY n o is e f ig u r e -• SUPER LOW NOISE FIGURE: 0.35 dB Typ at f = 12 GHz • HIGH ASSOCIATED GAIN:


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    PDF NE329S01 NE329S01 Rn/50 NE329S01-T1 NE329S01-T1B

    NE334S01

    Abstract: No abstract text available
    Text: PRELIMINARY DATASHEET NEC C BAND SUPER LOW NOISE HJ FET NE334S01 FEATURES_ MAXIMUM AVAILABLE GAIN, FORWARD INSERTION GAIN vs. FREQUENCY • VERY LOW NOISE FIGURE: 0.25 dB TYP at 4 GHz • HIGH ASSOCIATED GAIN: 16.0 dB TYP at 4 GHz • GATE WIDTH: 280 jim


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    PDF NE334S01 NE334S01 NE334S01-T1 NE334S01-T1B

    sn 7441

    Abstract: No abstract text available
    Text: NEC SUPER LOW NOISE HJ FET FEATURES_ NE33200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY • VERY LOW NOISE FIGURE: V ds = 2 V, Ids = 10 m A 0 75 dB typical at 12 GHz • HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz • GATE LENGTH: 0.3 nm • GATE WIDTH: 280 |j.m


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    PDF NE33200 NE33200 NE33200N NE33200M IS221 sn 7441

    840-SL

    Abstract: NE32984D U/25/20/TN26/15/850/NE32984D
    Text: NEC ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32984D NOISE FIGURE & ASSOCIATED FEATURES GAIN v« FRFOMFWrV Vos = 2 V, lo i a 10 IÎ1A • VERY LOW NOISE FIGURE: 0.40 d 8 Typical at 12 GHz • HIGH ASSOCIATED GAIN: 12.5 0 8 Typical at 12 GHz ai • La i 0.20 pm . W o • 200 nm


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    PDF NE32984D NE329640 NE329640-S NE329Ã 40-T1 NE32964D-SI 840-SL 840-SL NE32984D U/25/20/TN26/15/850/NE32984D

    NE32000

    Abstract: NE32084 NE32083A
    Text: E C/ C A L I F O R N I A NEC 1SE D b42?m4 OQOlbOS r - 3 / - 2 S' 3 NE32000 NE32083A NE32084 LOW COST/LOW NOISE K-BAND HETERO JUNCTION FET OUTLINE DIMENSIONS FEATURES NE32000 CHIP • LOW NOISE FIGURE 1.2 dB TYP at f = 12 GHz (NE32083A) 1.3 dB TYP at f = 12 GHz (NE32084)


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    PDF NE32000 NE32083A NE32084 NE32083A) NE32084) NE320 NE32000 NE32084 NE32083A

    NE334S01

    Abstract: E7138 nec microwave NE76084 NE67383
    Text: NEC is a global force in the dozens of satellites around the world. j and engineering services are all geared to computer, communications and home CEL’s Space/Hi Rel Management Group | helping you get your designs off paper and electronics markets. The company’s products


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    hcl laptop MOTHERBOARD CIRCUIT diagram

    Abstract: uPC 577H 945 gl MOTHERBOARD CIRCUIT diagram dg 41 wv motherboard BLR MQ 06 tsr 002 triac wg 8 s 82C735 oma4 marking WMG
    Text: îb ib n n n -R !” 82C735 I/O Peripheral Controllers With Printgine Parallel Port—Printgine" Floppy Disk Controller • Single-chip floppy solution ■ Software compatible with NEC 765B and Intel 82077 ■ Perpendicular recording support B 48mA disk drivers and Schmitt-trigger inputs


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    PDF 82C735 250kB/s, 300kB/s, 500kB/s NS16550 16-byte 00G7Db4 82C735 hcl laptop MOTHERBOARD CIRCUIT diagram uPC 577H 945 gl MOTHERBOARD CIRCUIT diagram dg 41 wv motherboard BLR MQ 06 tsr 002 triac wg 8 s oma4 marking WMG

    Nec 4558 c

    Abstract: NE33284A-SL NE33284AS 33284a
    Text: NEC SUPER LOW NOISE HJ FET FEATURES NE33284A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vds = 2 V, Ids = 10 mA V ER Y LO W NO ISE FIG URE: 0.8 dB typical at 12 GHz HIG H A S S O C IA T E D G AIN : 10.5 dB Typical at 12 GHz m G A TE LE N G T H : 0.3 urn «


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    PDF NE33284A NE33284A NE33284AS NE33284A-T1 84ASL NE33284A-SL. Nec 4558 c NE33284A-SL 33284a