VP215
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2137T5A L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2137T5A is GaAs MMIC for PA driver amplifier which were developed for mobile phone and another Lband application. This device is housed in a 16-pin TSON Thin small out-line non-leaded package. And this package is able to
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PG2137T5A
PG2137T5A
16-pin
VP215
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XM0830SJ
Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters
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24GHz
BF517
BF770A
BF771
BF775
BF799
BF799W
BFP181
BFP181R
BFP182
XM0830SJ
smd code marking 162 sot23-5
MARKING V14 SOT23-5
RF Transistor Selection
smd code marking rf ft sot23
smd code marking NEC rf transistor
sot-363 inf
smd marking D3 SOT363
XM0860SH
MGA51563
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K1 MARK 6PIN
Abstract: renesas tape and reel nec lot number on packing label nec package label nec lot number on REEL label renesas lot number on packing label MARK E2
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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G0706
K1 MARK 6PIN
renesas tape and reel
nec lot number on packing label
nec package label
nec lot number on REEL label
renesas lot number on packing label
MARK E2
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PD166007
Abstract: C11531E IL12 NEC relay 12V
Text: DATA SHEET MOS INTEGRATED CIRCUIT PD166007 SINGLE N-CHANNEL HIGH SIDE INTELLIGENT POWER DEVICE PACKAGE DRAWING unit: mm The μ PD166007 device is an N-channel high-side switch with charge 4.0 MIN (4.4 TYP) sense and embedded protection functions. • Built-in charge pump
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PD166007
PD166007
C11531E
IL12
NEC relay 12V
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marking code C1E SMD Transistor
Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17
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P14740EE5V0PF00
marking code C1E SMD Transistor
TRANSISTOR SMD MARKING CODE s01
FMCW Radar
transistor smd c1y
NE92039
g2b 6-pin smd
NE582M03
NE3210SO1
smd transistor g1-L
smd code marking NEC 817
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NEC RF Switch
Abstract: marking 6-PIN PLASTIC TSON 6 GHZ nec IEEE802.11a/b/g uPG2163T5N uPG2163T5N-E2 UPG2163
Text: PRELIMINARY PRODUCT INFORMATION GaAs INTEGRATED CIRCUIT uPG2163T5N GaAs MMIC SPDT SWITCH FOR 2.4 GHz AND 5 GHz DUALBAND WIRELESS LAN DESCRIPTION The uPG2163T5N is a GaAs MMIC SPDT switch for 2.4 GHz and 5 GHz dualband wireless LAN. Low insertion loss and dual band operations suit to dualband wireless LAN system.
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uPG2163T5N
NEC RF Switch
marking 6-PIN PLASTIC TSON
6 GHZ nec
IEEE802.11a/b/g
uPG2163T5N-E2
UPG2163
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nec mosfet marked v75
Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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G0706
PX10727EJ02V0PF
nec mosfet marked v75
NEC Ga FET marking code T79
FET marking code g5d
marking code C1G mmic
LGA 1155 PIN diagram
PB1507
marking code C1E mmic
marking code C1H mmic
PC8230TU
MMIC SOT 363 marking CODE 77
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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PD166007
Abstract: msl 9350 C11531E IL12
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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PD166009
Abstract: AEC-Q100-002 C11531E IL12
Text: DATA SHEET MOS INTEGRATED CIRCUIT PD166009 SINGLE N-CHANNEL HIGH SIDE INTELLIGENT POWER DEVICE PACKAGE DRAWING unit: mm The μ PD166009 device is an N-channel high-side switch with charge 4.0 MIN (4.4 TYP) sense and embedded protection functions. • Built-in charge pump
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PD166009
PD166009
AEC-Q100-002
C11531E
IL12
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pd166010
Abstract: MARKING S196 AEC-Q100-002 C11531E IL12 IL1-21-2
Text: DATA SHEET MOS INTEGRATED CIRCUIT PD166010 SINGLE N-CHANNEL HIGH SIDE INTELLIGENT POWER DEVICE PACKAGE DRAWING unit: mm The μ PD166010 device is an N-channel high-side switch with charge 4.0 MIN (4.4 TYP) sense and embedded protection functions. • Built-in charge pump
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PD166010
PD166010
MARKING S196
AEC-Q100-002
C11531E
IL12
IL1-21-2
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT PD166009 SINGLE N-CHANNEL HIGH SIDE INTELLIGENT POWER DEVICE PACKAGE DRAWING unit: mm The μ PD166009 device is an N-channel high-side switch with charge 4.0 MIN (4.4 TYP) sense and embedded protection functions. • Built-in charge pump
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PD166009
PD166009
M8E0909E)
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT PD166010 SINGLE N-CHANNEL HIGH SIDE INTELLIGENT POWER DEVICE PACKAGE DRAWING unit: mm The μ PD166010 device is an N-channel high-side switch with charge 4.0 MIN (4.4 TYP) sense and embedded protection functions. • Built-in charge pump
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PD166010
PD166010
M8E0909E)
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10-PIN
Abstract: HS350 VP215 BYPASS Capacitors NEC NEC MARKING TSON
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2027TQ L-BAND 4 W HIGH POWER SPDT SWITCH DESCRIPTION The µPG2027TQ is an L-band SPDT GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 500 MHz to 2.0 GHz, having the low insertion loss and high
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PG2027TQ
PG2027TQ
10-pin
HS350
VP215
BYPASS Capacitors NEC
NEC MARKING TSON
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY PRODUCT INFORMATION GaAs INTEGRATED CIRCUIT uPG2160T5K L,S-BAND SPDT SWITCH DESCRIPTION The uPG2160T5K is a GaAs MMIC for L,S-band SPDT（Single Pole Double Throw）which were designed for mobile phone and the another L,S-band applications. This device can operate frequency from 0.5GHz to 3.0GHz, having the low insertion loss and high isolation.
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uPG2160T5K
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nec 2031
Abstract: 10-PIN HS350 VP215
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2031TQ L-BAND SP3T SWITCH DESCRIPTION The µPG2031TQ is an L-band SP3T GaAs FET switch which was developed for CDMA/PCS/GPS triple mode digital cellular telephone application. The device can operate from 500 MHz to 2.0 GHz, having the low insertion loss
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PG2031TQ
PG2031TQ
10-pin
nec 2031
HS350
VP215
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PG2164T5N
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2164T5N DPDT SWITCH FOR 2.4 GHz AND 6 GHz DUAL-BAND WIRELESS LAN DESCRIPTION The μPG2164T5N is a GaAs MMIC DPDT Double Pole Double Throw switch which was developed for 2.4 GHz and 6 GHz dual-band wireless LAN. This device can operate frequency from 2.4 GHz band and 6 GHz band, having
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PG2164T5N
PG2164T5N
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Untitled
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2162T5N DPDT SWITCH FOR 2.4 GHz AND 6 GHz DUAL-BAND WIRELESS LAN DESCRIPTION The μPG2162T5N is a GaAs MMIC DPDT Double Pole Double Throw switch which was developed for 2.4 GHz and 6 GHz dual-band wireless LAN. This device can operate frequency from 2.4 GHz band and 6 GHz band, having
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PG2162T5N
PG2162T5N
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Untitled
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2164T5N DPDT SWITCH FOR 2.4 GHz AND 6 GHz DUAL-BAND WIRELESS LAN DESCRIPTION The µPG2164T5N is a GaAs MMIC DPDT Double Pole Double Throw switch which was developed for 2.4 GHz and 6 GHz dual-band wireless LAN. This device can operate frequency from 2.4 GHz band and 6 GHz band, having
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PG2164T5N
PG2164T5N
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marking g4x
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2163T5N SPDT SWITCH FOR 2.4 GHz AND 6 GHz DUAL-BAND WIRELESS LAN DESCRIPTION The μPG2163T5N is GaAs MMIC SPDT Single Pole Double Throw switch which was developed for 2.4 GHz and 6 GHz dual-band wireless LAN. This device can operate frequency from 2.4 GHz band and 6 GHz band, having the
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PG2163T5N
PG2163T5N
marking g4x
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Untitled
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2176T5N 50 Ω TERMINATION TYPE HIGH POWER SPDT SWITCH FOR WiMAX DESCRIPTION The μPG2176T5N is a GaAs MMIC 50 Ω termination type high power SPDT Single Pole Double Throw switch which was developed for WiMAX. This device can operate frequency from 2.3 to 5.85 GHz, having the low insertion
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PG2176T5N
PG2176T5N
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marking 6-PIN PLASTIC TSON
Abstract: DPDT 6 terminal switch internal diagram IEEE802.11a/b/g HS350
Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2162T5N DPDT SWITCH FOR 2.4 GHz AND 6 GHz DUAL-BAND WIRELESS LAN DESCRIPTION The μPG2162T5N is a GaAs MMIC DPDT Double Pole Double Throw switch which was developed for 2.4 GHz and 6 GHz dual-band wireless LAN. This device can operate frequency from 2.4 GHz band and 6 GHz band, having
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PG2162T5N
PG2162T5N
marking 6-PIN PLASTIC TSON
DPDT 6 terminal switch internal diagram
IEEE802.11a/b/g
HS350
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10-PIN
Abstract: HS350 VP215
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2024TQ GaAs MMIC DPDT SWITCHES FOR 5 GHz BAND WIRELESS LAN DESCRIPTION The µPG2024TQ is a GaAs MMIC DPDT switch for 5 GHz band wireless LAN. Low insertion loss and high handling power contribute to user's system design.
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PG2024TQ
PG2024TQ
10-PIN
HS350
VP215
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10-PIN
Abstract: HS350 VP215
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG186TQ GaAs MMIC DBS SPDT IF SWITCH DESCRIPTION The µPG186TQ is intended for use in Direct Broadcast Satellite DBS applications within the Low Noise Block (LNB) down-converter for systems where at least multi LNB are required.
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PG186TQ
PG186TQ
10-pin
PG186TQ-E1
HS350
VP215
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