nec 2401 831
Abstract: nec 2401 2SC5010-T1 2SC5010 437 20000 marking 83 7749 transistor
Text: DATA SHEET SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and
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2SC5010
2SC5010
nec 2401 831
nec 2401
2SC5010-T1
437 20000
marking 83
7749 transistor
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nec 2401 831
Abstract: nec 2401 2SC5010 nec 2035 744 2SC5010-T1 3699 npn
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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g2ns
Abstract: C10535E NE72118 NE72118-T1 NE72118-T2 NEC k 2134 812 421
Text: DATA DATASHEET SHEET GaAs MES FET NE72118 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: GS = 5.5 dB TYP. @f = 12 GHz • Gate Length: Lg = 0.8 mm recessed gate • Gate Width: Wg = 330 mm • 4 pins super mini mold
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NE72118
NE72118)
g2ns
C10535E
NE72118
NE72118-T1
NE72118-T2
NEC k 2134
812 421
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nec d822
Abstract: D1289 NEC D1481 NEC D382 D1046 D1384 D1409 D1549 D1197 D552
Text: DATA SHEET SHEET DATA BIPOLAR ANALOG INTEGRATED CIRCUITS PPC2711TB, PPC2712TB 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FOR DBS TUNERS DESCRIPTION The PPC2711TB and PPC2712TB are silicon monolithic integrated circuits designed as buffer amplifier for DBS
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PPC2711TB,
PPC2712TB
PPC2711TB
PPC2712TB
PPC2711TB
PPC2711T/PPC2712T
PPC2711TB/PPC2712TB
PPC2711T/PPC2712T.
nec d822
D1289
NEC D1481
NEC D382
D1046
D1384
D1409
D1549
D1197
D552
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NEC NF 932
Abstract: ZO 103 MA 75 623 2SC5009 2SC5009-T1 TD-2430 power transistor 3055
Text: DATA SHEET SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS in milimeters noise figure, high gain, and high current capability achieve a very wide 1.6± 0.1 0.8± 0.1 dynamic range and excellent linearity. This is achieved by direct nitride
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2SC5009
2SC5009
NEC NF 932
ZO 103 MA 75 623
2SC5009-T1
TD-2430
power transistor 3055
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uc 3808
Abstract: C10535E NE72118 NE72118-T1 NE72118-T2 k 2134 nec od6000
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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ZO 103 MA 75 623
Abstract: ZO 103 MA 75 542 1 928 405 767 NEC C 3568 TD-2433 2SC5008 2SC5008-T1 4557 nec 518 1149 0 44 111 1 928 405 452
Text: DATA SHEET SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5008 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in millimeters in low noise and small signal amplifiers from VHF band to L band. Low
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2SC5008
2SC5008
ZO 103 MA 75 623
ZO 103 MA 75 542
1 928 405 767
NEC C 3568
TD-2433
2SC5008-T1
4557 nec
518 1149 0 44 111
1 928 405 452
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2SC5009
Abstract: 2SC5009-T1
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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s-parameter s11 s12 s21 10000
Abstract: 2SC5008 2SC5008-T1
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD98431 10/100 Mbps Ethernet TM CONTROLLER DESCRIPTION The µPD98431 is a 10/100 Mbps Ethernet controller having eight Media Access Control MAC ports conforming to IEEE 802.3 and IEEE 802.3u. Each port can store 1 packet of receive data since each port has a 2 KB receive FIFO. This can reduce the
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PD98431
PD98431
32-bit
64-bit
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AB244A
Abstract: R488A AD9361 AK2177 CMOS-9HD UPD65891 N526A PD65891 tqfp 64 thermal resistance nec PD65881
Text: Design Manual CMOS Gate Array, Embedded Array Package Ver. 4.0 Target Series CMOS-N5 Series CMOS-9HD Series CMOS-10HD Series EA-9HD Series Document No. A16400EJ4V0DM00 4th edition Date Published December 2004 NS CP(N) NEC Electronics Corporation 2002
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CMOS-10HD
A16400EJ4V0DM00
A16400EJ4V0DM
IR50-203-3-37
IR50-207-3-37
AB244A
R488A
AD9361
AK2177
CMOS-9HD
UPD65891
N526A
PD65891
tqfp 64 thermal resistance nec
PD65881
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FD31
Abstract: PD98431 c3194 35x35 bga
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD98431 10/100 Mbps Ethernet TM CONTROLLER DESCRIPTION The µPD98431 is a 10/100 Mbps Ethernet controller having eight Media Access Control MAC ports conforming to IEEE 802.3 and IEEE 802.3u. Each port can store 1 packet of receive data since each port has a 2 KB receive FIFO. This can reduce the
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PD98431
PD98431
32-bit
64-bit
FD31
c3194
35x35 bga
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renesas BGA 305
Abstract: FD31 NEC AC12 PD98431 FD42
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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acer laptop battery pinout
Abstract: PCT303W str f 6655 hp laptop battery pinout circuit diagram wireless spy camera car ecu microprocessors RS -24V SDS RELAY difference between rtos psos vx works c executive NEC BONITO bird bell mini project
Text: VR Series Catalog 2000 64-bit MIPS Processors 17K, 75X, 78K, V850, VR Document No. U14705EE1V0PF00 2000 NEC Electronics Europe GmbH. Printed in Germany. All rights reserved. VR Series, VR4121, VR4122, VR4181, VR43xx, VR5000, VR5432, VRC4172, VRC4173, Ravin,
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64-bit
U14705EE1V0PF00)
VR4121,
VR4122,
VR4181,
VR43xx,
VR5000,
VR5432,
VRC4172,
VRC4173,
acer laptop battery pinout
PCT303W
str f 6655
hp laptop battery pinout
circuit diagram wireless spy camera
car ecu microprocessors
RS -24V SDS RELAY
difference between rtos psos vx works c executive
NEC BONITO
bird bell mini project
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Untitled
Abstract: No abstract text available
Text: DATA SHEET M O S INTEGRATED CIRCUIT MC-424000AC72F 4 M-WORD BY 72-BIT DYNAMIC RAM MODULE FAST PAGE MODE ECC Description The MC-424000AC72F is a 4,194,304 w ords by 72 bits dynamic R A M module on which 18 pieces of 16 M DRA M : ¿tPD4216400 are assembled.
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MC-424000AC72F
72-BIT
MC-424000AC72F
tPD4216400
MC-424000AC72-60
MC-424000AC72-70
M1S8S-50A2
mS7525
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transistor NEC D 587
Abstract: LS 1691 BM UPA802T l 9143 NEC D 587
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA802T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD T he/xP A 802T has b u ilt-in 2 1o w -v o It age tra n s is to rs w h ic h are d e sig ne d PACKAGE DRAWINGS
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uPA802T
2SC4227)
transistor NEC D 587
LS 1691 BM
l 9143
NEC D 587
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sem 2105 16 pin
Abstract: sem 2105
Text: DATA SH E E T GaAs MES FET NE72118 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES High Power Gain: Gs = 5.5 dB TYP. @ f = 12 GHz Gate Length: Lg = 0.8 jum recessed gate Gate Width: Wg = 330 fjm 4 pins super mini mold Tape & reel packaging only available
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NE72118
NE72118-T1
NE72118-T2
NE72118)
sem 2105 16 pin
sem 2105
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-42S4000LAB32 4 M-WORD BY 32-BIT DYNAMIC RAM MODULE SO DIMM FAST PAGE MODE Description The M C -42S4000LAB32 is a 4,194,304 w ords by 32 bits dynam ic RAM m odule (Small Outline DIMM) on which 8 pieces of 16 M DRAM: ¿IPD42S17800L are assembled.
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MC-42S4000LAB32
32-BIT
MC-42S4000LAB32
uPD42S17800L
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s727E
Abstract: d4216165 uPD4216165-60 tlu 011 PD4216165
Text: DATA SHEET 'J E C MOS INTEGRATED CIRCUIT /¿PD4216165 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE D escription The /iPD4216165 is a 1 048 576 w ords by 16 bits dynamic CMOS RAM w ith optional hyper page mode. Hyper page mode is a kind o f the page mode and is useful for the read operation.
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uPD4216165
16-BIT,
/iPD4216165
fiPD4216165
50-pin
42-pin
cycles/64
/1PD4216165-50
uPD4216165-60
iiPD4216165-70
s727E
d4216165
tlu 011
PD4216165
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nec hyper
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT JU P D 4 2 1 6 1 6 5 16 M BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The /¿PD4216165 is a 1 048 576 w o rd s by 16 b its d yn a m ic CMOS RAM w ith o p tio n a l h yp e r page m ode.
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16-BIT,
uPD4216165
/zPD4216165
50-pin
42-pin
cycles/64
/iPD4216165-50
/iPD4216165-60
PD4216165-70
20too§
nec hyper
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4218160-60
Abstract: NEC 4218160 TI42 upd4218160 NEC A2C MARKING LE50 PD4218160 IR35-207 4218160
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD42S18160,4218160 16M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The ¿tPD42S18160, 4218160 are 1,048,576 words by 16 bits CMOS dynamic RAMs. The fast page mode and byte read/write mode capability realize high speed access and low power consumption.
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uPD42S18160
uPD4218160
16M-BIT
16-BIT,
tPD42S18160,
PD42S18160
50-pin
42-pin
MPD42S18160-60,
VP15-207-2
4218160-60
NEC 4218160
TI42
NEC A2C
MARKING LE50
PD4218160
IR35-207
4218160
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Untitled
Abstract: No abstract text available
Text: I • b 4 2 7 5 5 5 D O M l ^ 5 7 b M N E C E À T A NEC S H E E T MOS INTEGRATED CIRCUIT /¿PD42S4900, 424900 4 M BIT DYNAMIC RAM 512 K-WORD BY 9-BIT, FAST PAGE MODE DESCRIPTION ★ The /iPD42S4900, 424900 are 524 288 w ords by 9 bits dynam ic CMOS RAMs. The fast page m ode cap ab ility
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PD42S4900,
/iPD42S4900,
PD42S4900
28-pin
bMg75a5
PD42S4900G5,
424900G5
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707j
Abstract: XC002 D42S161
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ju P D 42S 16 16 5 , 4 2 16 16 5 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description T h e /¿PD 42S16165, 421 6 1 6 5 a re 1,048,576 w o rd s b y 16 b its C M O S dy n a m ic R A M s w ith o p tio nal ED O .
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16-BIT,
42S16165,
50-pin
42-pin
IR35-207-3
VP15-207-3
707j
XC002
D42S161
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NEC 4218165-60
Abstract: PD42S18165-60
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / ¿IPD42S18165, 4218165 16 M-BIT DYNAM IC RAM 1 M-W ORD BY 16-BIT, EDO, BYTE READ/W RITE MODE D e s c rip tio n The luPD42S18165, 4218165 are 1.048.576 words by 56 bits CMOS dynamic RAMs with optional EDO, EDO is a kind of the page mode and is useful for the read operation.
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uPD42S18165
uPD4218165
16-BIT,
luPD42S18165
/rPD42S18165
42S18165.
50-pin
42-pin
PP42S18165,
IR35-207-3
NEC 4218165-60
PD42S18165-60
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