S1226-8BK
Abstract: No abstract text available
Text: Si photodiodes S1226 series For UV to visible, precision photometry; suppressed near IR sensitivity Features Applications Suppressed near IR sensitivity Analytical equipment High sensitivity in UV region quartz glass type Optical measurement equipment, etc.
|
Original
|
PDF
|
S1226
S1226-18BQ
S1226-18BK
S1226-5BQ
S1226-5BK
S1226-44BQ
S1226-44BK
S1226-8BQ
S1226-8BK
KSPD1034E08
S1226-8BK
|
S1226-44BK
Abstract: S1226-18BK
Text: Si photodiodes S1226 series For UV to visible, precision photometry; suppressed near IR sensitivity Features Applications High UV sensitivity: QE=75 % λ=200 nm Analytical equipment Suppressed near IR sensitivity Optical measurement equipment, etc. Low dark current
|
Original
|
PDF
|
S1226
KSPD1034E07
S1226-44BK
S1226-18BK
|
Untitled
Abstract: No abstract text available
Text: Si photodiodes S2386 series For visible to near IR, general-purpose photometry Features Applications High sensitivity in visible to near infrared range Analytical instruments Low dark current Optical measurement equipment High reliability Superior linearity
|
Original
|
PDF
|
S2386
S2386-18K
S2386-18L
S2386-5K
S2386-44K
S2386-45K
S2386-8K
KSPD1035E06
|
Untitled
Abstract: No abstract text available
Text: Si photodiodes S2386 series For visible to near IR, general-purpose photometry Features Applications High sensitivity in visible to near infrared range Analytical instruments Low dark current Optical measurement equipment High reliability Superior linearity
|
Original
|
PDF
|
S2386
S2386-18K
S2386-18L
S2386-5K
S2386-44K
S2386-45K
S2386-8K
KSPD1035E07
|
hamamatsu S1223
Abstract: S1223
Text: Si PIN photodiodes S1223 series For visible to near IR, precision photometry Features Applications High sensitivity in visible to near infrared range Optical measurement equipment High reliability Analytical equipment, etc. High-speed response S1223: fc=30 MHz
|
Original
|
PDF
|
S1223
S1223:
S1223-01:
S1223
S1223-01
S1223-01
absolu69
KPIN1050E02
hamamatsu S1223
|
Photodiodes
Abstract: yag Electrical circuit S11499 TO-8 Package
Text: IR-enhanced Si PIN photodiodes S11499 series Large area, enhanced near IR sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11499 series is a family of Si PIN photodiodes with drastically improved sensitivity in the near infrared region at wavelengths longer than 900 nm. Compared to our conventional product, the S11499 series has
|
Original
|
PDF
|
S11499
S11499-01)
SE-171
KPIN1082E01
Photodiodes
yag Electrical circuit
TO-8 Package
|
Untitled
Abstract: No abstract text available
Text: IR-enhanced Si PIN photodiodes S11499 series Large area, enhanced near IR sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11499 series is a family of Si PIN photodiodes with drastically improved sensitivity in the near infrared region at wavelengths longer than 900 nm. Compared to our conventional product, the S11499 series has
|
Original
|
PDF
|
S11499
S11499-01)
SE-171
KPIN1082E01
|
Untitled
Abstract: No abstract text available
Text: IR-enhanced Si PIN photodiodes S11499 series Large area, enhanced near IR sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11499 series is a family of Si PIN photodiodes with drastically
|
Original
|
PDF
|
S11499
S11499-01)
KPIN1082E02
|
Untitled
Abstract: No abstract text available
Text: Si photodiodes S1336 series UV to near IR for precision photometry Features Applications High sensitivity in UV range Analytical instruments Low capacitance Optical measurement equipment High reliability Structure / Absolute maximum ratings Type no. Dimensional
|
Original
|
PDF
|
S1336
S1336-18BQ
S1336-18BK
S1336-5BQ
S1336-5BK
S1336-44BQ
S1336-44BK
S1336-8BQ
S1336-8BK
KSPD1022E07
|
photosensitive
Abstract: S1336-8BK S1336-5BQ
Text: Si photodiodes S1336 series UV to near IR for precision photometry Features Applications High sensitivity in UV range Analytical instruments Low capacitance Optical measurement equipment High reliability Structure / Absolute maximum ratings Type no. S1336-18BQ
|
Original
|
PDF
|
S1336
S1336-18BQ
S1336-18BK
S1336-5BQ
S1336-5BK
S1336-44BQ
S1336-44BK
S1336-8BQ
S1336-8BK
KSPD1022E06
photosensitive
S1336-8BK
|
FIL-3C
Abstract: fil 3c
Text: Photoconductive Series Planar Diffused Silicon Photodiodes The Photoconductive Detector Series are suitable for high speed and high sensitivity applications. The spectral range extends from 350 to 1100 nm, making these photodiodes ideal for visible and near IR applications,
|
Original
|
PDF
|
|
PIN-10D
Abstract: PIN-5DI PIN-13DI PIN-10DF PIN-10DI PIN10DI OSD100-0A InGaAs APD quadrant OSD5-5T PIN-44DI
Text: Photoconductive Series Planar Diffused Silicon Photodiodes The Photoconductive Detector Series are suitable for high speed and high sensitivity applications. The spectral range extends from 350 to 1100 nm, making these photodiodes ideal for visible and near IR applications,
|
Original
|
PDF
|
OS-P200
OSD100-0A
OSD100-5TA
PIN-10D
PIN-5DI
PIN-13DI
PIN-10DF
PIN-10DI
PIN10DI
OSD100-0A
InGaAs APD quadrant
OSD5-5T
PIN-44DI
|
near IR photodiodes
Abstract: S8745-01 S8558
Text: Selection guide - February 2014 Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation HAMAMATSU PHOTONICS K.K. S i P h o t o d i o d e Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation Si photodiode package •··················································· 5
|
Original
|
PDF
|
KSPD0001E09
near IR photodiodes
S8745-01
S8558
|
Untitled
Abstract: No abstract text available
Text: IMAGE SENSOR NMOS linear image sensor S8380/S8381 series NMOS linear image sensors with high IR sensitivity S8380/S8381 series are designed to have higher sensitivity in the infrared and soft X-ray regions when compared to standard NMOS linear image sensors. The peak sensitivity wavelength is in the near IR region λp=750 nm .
|
Original
|
PDF
|
S8380/S8381
S8380
S8381
S8380-128Q)
S8380-256Q,
S8381-256Q)
S8380-512Q,
S8381-512Q)
S8381-1024Q)
|
|
|
S8380-512Q
Abstract: S8381-256Q S8380 S8380-128Q S8380-256Q S8381-1024Q S8381-512Q
Text: IMAGE SENSOR NMOS linear image sensor S8380/S8381 series NMOS linear image sensors with high IR sensitivity S8380/S8381 series are designed to have higher sensitivity in the infrared and soft X-ray regions when compared to standard NMOS linear image sensors. The peak sensitivity wavelength is in the near IR region λp=750 nm .
|
Original
|
PDF
|
S8380/S8381
S8380
S8381
S8380-128Q)
S8380-256Q,
S8381-256Q)
S8380-512Q,
S8381-512Q)
S8381-1024Q)
S8380-512Q
S8381-256Q
S8380-128Q
S8380-256Q
S8381-1024Q
S8381-512Q
|
Untitled
Abstract: No abstract text available
Text: IMAGE SENSOR NMOS linear image sensor S8380/S8381 series NMOS linear image sensors with high IR sensitivity S8380/S8381 series are designed to have higher sensitivity in the infrared and soft X-ray regions when compared to standard NMOS linear image sensors. The peak sensitivity wavelength is in the near IR region λp=750 nm .
|
Original
|
PDF
|
S8380/S8381
S8380
S8381
S8380-128Q)
S8380-256Q,
S8381-256Q)
S8380-512Q,
S8381-512Q)
S8381-1024Q)
|
Untitled
Abstract: No abstract text available
Text: IMAGE SENSOR NMOS linear image sensor S8380/S8381 series NMOS linear image sensors with high IR sensitivity S8380/S8381 series are designed to have higher sensitivity in the infrared and soft X-ray regions when compared to standard NMOS linear image sensors. The peak sensitivity wavelength is in the near IR region λp=750 nm .
|
Original
|
PDF
|
S8380/S8381
S8380
S8381
S8380-128Q)
S8380-256Q,
S8381-256Q)
S8380-512Q,
S8381-512Q)
S8381-1024Q)
|
Untitled
Abstract: No abstract text available
Text: Si photodiodes S2592/S3477 series Thermoelectrically cooled photodiodes for low-light-level detection in UV to near IR The S2592/S3477 series sensors combine a UV to near infrared Si photodiode with a thermoelectric cooler. A thermistor is also included in the same package to sense the Si photodiode chip temperature. This allows stable operation over long periods of time, making these sensors suitable for low-light-level detection where a high S/N is required.
|
Original
|
PDF
|
S2592/S3477
S2592
S3477
C1103-04)
A3179
B1201,
KSPD1003E08
|
PIN-5DI
Abstract: PIN-020A PIN-3CDI UDT Pin-040A PIN-10DI PIN-6DI PIN-13DI FIL-3C diodes 10di 13DI
Text: PHOTOCONDUCTIVE SERIES PLANAR DIFFUSED SILICON PHOTODIODES APPLICATIONS • • • • • • The Photoconductive Detector Series are suitable for high speed and high sensitivity applications. The spectral range extends from 350 to 1100 nm, making these photodiodes ideal for visible and near IR applications, including such
|
Original
|
PDF
|
|
InGaAs PIN photodiode Long Wavelength 2.6
Abstract: ir photodiode array ingaas
Text: InGaAs PIN Photodiodes Near IR detectors with low noise and superior frequency response • Standard types Standard types cover a spectral response from 0.9 to 1.7 |im, and available with 7 active areas ranging from 0.08 mm to 5.0 mm in diam eter. Applications include optical communications, power meter, near
|
OCR Scan
|
PDF
|
256-element
InGaAs PIN photodiode Long Wavelength 2.6
ir photodiode array ingaas
|
IR photodiode array
Abstract: No abstract text available
Text: InGaAs PIN Photodiodes Near IR detectors with low noise and superior frequency response • Standard types S tan d ard types co ver a spectral resp onse from 0 .9 to 1.7 pirn, and available with 7 active areas ranging from 0 .0 8 mm to 5 .0 mm in diam eter. Applications include optical com m unications, power m eter, near
|
OCR Scan
|
PDF
|
|
C1103-02
Abstract: m5920 m59203 S3477-03
Text: THERMOELECTRICALLY-COOLED SILICON PHOTODIODES S2592, S3477 SERIES HAM AM ATSU TECHNICAL DATA For low-light-level detection from UV to near IR. Highly stable operation. Hamamatsu offers therm oelectrical ly-cooled silicon photodiodes with a wide sensitivity range from UV to
|
OCR Scan
|
PDF
|
S2592,
S3477
S2592
C1103-02)
A3179
S-164-40
JUN/88
CR-2000
C1103-02
m5920
m59203
S3477-03
|
CLD141
Abstract: CLD141R
Text: CLD141. CLD141R Ç ? Clairex Silicon Planar photodiodes Technologies, Inc. features • • • • • 70° acceptance angle 860nm peak response TO-46 hermetic package large photosensitive area usable for visible through near-IR absolute maximum ratings TA = 25°C unless otherwise stated
|
OCR Scan
|
PDF
|
CLD141,
CLD141R
860nm
CLD141
CLD141R
2854K
|
TO-5 header
Abstract: CLD156 CLD156R
Text: CLD156. CLD156R S f Clairex Large Active Area Silicon Planar photodiodes features • • • • Technologies, me. May, 2001 absolute maximum ratings (TA = 25°C unless otherwise stated 100° acceptance angle 860nm peak response TO-5 hermetic package usable for visible through near-IR
|
OCR Scan
|
PDF
|
CLD156,
CLD156R
860nm
CLD156
CLD156R
current01
100mV,
voltage11'
TO-5 header
|
