NE68839 Search Results

NE68839 Datasheets (7)

Part	Manufacturer	Description	Datasheet Type	PDF
NE68839	NEC	Semiconductor Selection Guide	Original	PDF
NE68839	NEC	NPN Silicon Transistor.	Original	PDF
NE68839R	NEC	NPN Silicon Transistor.	Original	PDF
NE68839R-T1	NEC	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR	Original	PDF
NE68839R-T1	NEC	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR	Original	PDF
NE68839-T1	NEC	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR	Original	PDF
NE68839-T1	NEC	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR	Original	PDF

NE68839 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
NE68839 Abstract: No abstract text available Text: NONLINEAR MODEL NE68839 SCHEMATIC Q1 CCBPKG CCB LC LBX LCX Collector LB Base CCE LE CBEPKG CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 UNITS Parameters Q1 Parameters Q1 IS 3.8e-16 MJC 0.48 time seconds Parameter Units BF 135.7 XCJC 0.56 capacitance	Original	NE68839 8e-16 8e-15 5e-16 796e-12 549e-12 11e-12 032e-9 68ONAL 24e-12 NE68839	PDF
MU 350 Abstract: IC 7443 datasheet nec 3012 NE68939 NE68939-T1 NE69039 74245 20 pin ic 74626 30057 Text: DATA SHEET SILICON TRANSISTOR NE68939 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The NE68939 is ideal for the driver stage amplifier in 1.9GHz-band digital PACKAGE DRAWING cordless phones DECT, PHS, etc. . 2 5° Embossed tape 8 mm wide.	Original	NE68939 NE68939 MU 350 IC 7443 datasheet nec 3012 NE68939-T1 NE69039 74245 20 pin ic 74626 30057	PDF
2SC3355 SPICE MODEL Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101 Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness	Original	F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101	PDF
NE68839 Abstract: NE68939 NE69039 NE69039-T1-A PC2771T Text: NEC'S NPN SILICON EPITAXIAL TRANSISTOR FEATURES NE69039 OUTLINE DIMENSIONS Units in mm • OUTPUT POWER AT 1dB COMPRESSION POINT: 27.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB, Duty 1/8 PACKAGE OUTLINE 39 • 4 PIN MINI MOLD PACKAGE: NE69039 +0.2 2.8 -0.3	Original	NE69039 NE69039 NE68839 NE68939 NE69039-T1-A PC2771T	PDF
FET marking code g5d Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .	Original	R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic	PDF
nec mosfet marked v75 Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77 Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77	PDF
2SK2396 Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711 Text: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××）品名 µPC8119T アプリケーション移動通信電源電圧電流周波数	Original	X13769XJ2V0CD00 PC8119T PC8120T PC8130TA PC8131TA PG175TA PC2723T PC3206GR PC2748 PC2745 2SK2396 PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711	PDF
uPD16305 Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943 Text: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.	Original	PD43256A> PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD16305 uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943	PDF
nf025 Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408 Text: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920	Original	X13769XJ2V0CD00 950MHz 500MHz PC2794 PC1687 PC2744 PC2775/µ nf025 NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408	PDF
RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ Abstract: PC2771T NE68839 RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ 2.tx transistor Text: SILICON TRANSISTOR NE68939 NPN SILICON EPITAXIAL TRANSISTOR FEATURES • OUTPUT POWER AT 1dB COMPRESSION POINT: 24.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB, Duty 1/8 OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE 39 +0.2 2.8 -0.3 +0.2 1.5 -0.1 • 4 PIN MINI MOLD PACKAGE: NE68939	Original	NE68939 NE68939 9-j11 24-Hour RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ PC2771T NE68839 RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ 2.tx transistor	PDF
84t MARKING Abstract: marking 83T transistor marking 68t NE68139R NE68739R marking 84t marking 28R 1817 transistor NE68539R NE68039R Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 39R +0.2 2.8 -0.3 +0.10 0.6 -0.05 +0.2 1.5 -0.1 3 2 0.85 1.8 2.9 ± 0.2 0.95 1 1.1+0.2 -0.1 4 +0.10 0.4 -0.05 LEADS 1, 3, 4 0.16 +0.10	Original	NE68039R NE68139R NE68539R NE68639R NE68739R NE68839R NE85639R 84t MARKING marking 83T transistor marking 68t NE68139R NE68739R marking 84t marking 28R 1817 transistor NE68539R NE68039R	PDF
RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ Abstract: NE68839 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ NE68939 NE68939-T1 NE69039 PC2771T 2.tx transistor 53J5 31J1 Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR FEATURES NE68939 OUTLINE DIMENSIONS Units in mm • OUTPUT POWER AT 1dB COMPRESSION POINT: 24.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB, Duty 1/8 PACKAGE OUTLINE 39 +0.2 2.8 -0.3 +0.2 1.5 -0.1 • 4 PIN MINI MOLD PACKAGE: NE68939	Original	NE68939 NE68939 9-j11 24-Hour RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ NE68839 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ NE68939-T1 NE69039 PC2771T 2.tx transistor 53J5 31J1	PDF
nec b1007 Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G Text: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,	Original	NE68018 NE680 UPA801TC UPA808TC UPA821TC UPA826TC UPA861TD UPA831TC UPA862TD UPA835TC nec b1007 T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G	PDF
NE68830-T1-A Abstract: 2SC5193 2SC5194 2SC5195 NE688 NE68818 NE68819 NE68830 NE68833 131300 Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES • LOW PHASE NOISE DISTORTION • LOW NOISE: 1.5 dB at 2.0 GHz • LOW VOLTAGE OPERATION • LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: IC MAX = 100 mA • AVAILABLE IN SIX LOW COST PLASTIC SURFACE	Original	NE688 NE688 NE68830-T1-A 2SC5193 2SC5194 2SC5195 NE68818 NE68819 NE68830 NE68833 131300	PDF

NE68819 Abstract: ic NE 5532 LS 1017 BJT BF 331 2SC5193 2SC5194 2SC5195 NE688 NE68818 NE68830 Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES • LOW PHASE NOISE DISTORTION • LOW NOISE: 1.5 dB at 2.0 GHz • LOW VOLTAGE OPERATION • LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: IC MAX = 100 mA • AVAILABLE IN SIX LOW COST PLASTIC SURFACE	Original	NE688 NE688 NE68833-T1 NE68839-T1 NE68839R-T1 NE68819 ic NE 5532 LS 1017 BJT BF 331 2SC5193 2SC5194 2SC5195 NE68818 NE68830	PDF
RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ Abstract: NE68839 NE68939 NE69039 NE69039-T1 PC2771T RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR FEATURES NE69039 OUTLINE DIMENSIONS Units in mm • OUTPUT POWER AT 1dB COMPRESSION POINT: 27.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB, Duty 1/8 PACKAGE OUTLINE 39 • 4 PIN MINI MOLD PACKAGE: NE69039	Original	NE69039 NE69039 24-Hour RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ NE68839 NE68939 NE69039-T1 PC2771T RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ	PDF
BJT BF 331 Abstract: NE68819 NE68833 NE688 SERIES 901 704 16 08 55 2SC5191 2SC5193 2SC5194 2SC5195 NE688 Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES • LOW PHASE NOISE DISTORTION • LOW NOISE: 1.5 dB at 2.0 GHz • LOW VOLTAGE OPERATION • LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: IC MAX = 100 mA • AVAILABLE IN SIX LOW COST PLASTIC SURFACE	Original	NE688 NE688 NE68800 NE68818-T1 NE68819-T1 NE68830-T1 NE68833-T1 NE68839-T1 NE68839R-T1 BJT BF 331 NE68819 NE68833 NE688 SERIES 901 704 16 08 55 2SC5191 2SC5193 2SC5194 2SC5195	PDF
IN510 Abstract: No abstract text available Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR FEATURES NE68939 OUTLINE DIMENSIONS Units in mm • OUTPUT POWER AT 1dB COMPRESSION POINT: 24.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB, Duty 1/8 PACKAGE OUTLINE 39 +0.2 2.8 -0.3 +0.2 1.5 -0.1 • 4 PIN MINI MOLD PACKAGE: NE68939	Original	NE68939 NE68939 DEC-j50 -j100 9-j11 24-Hour IN510	PDF
80500 TRANSISTOR Abstract: LB 1639 4435 027P 157600 NE68818 2SC5191 2SC5193 2SC5194 2SC5195 Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES • LOW PHASE NOISE DISTORTION • LOW NOISE: 1.5 dB at 2.0 GHz • LOW VOLTAGE OPERATION • LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: IC MAX = 100 mA • AVAILABLE IN SIX LOW COST PLASTIC SURFACE	Original	NE688 NE688 NE68818-T1 NE68819-T1 NE68830-T1 NE68833-T1 NE68839-T1 NE68839R-T1 34-6393/FAX 80500 TRANSISTOR LB 1639 4435 027P 157600 NE68818 2SC5191 2SC5193 2SC5194 2SC5195	PDF
Vo 80500 TRANSISTOR Abstract: ST 80500 ap 4606 ST 80500 transistor q 1257 transistor IR 9342 2110 transistor NE68819 SOT143 L03 0828 30400 Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES_ • LOW PHASE NOISE DISTORTIO N • LOW NOISE: 1 .5 dB at 2 .0 G H z • LOW VO LTAG E OPERATION • LARGE ABSOLUTE M AXIM UM CO LLEC TO R CU RREN T: Ic M A X = 1 0 0 m A	OCR Scan	NE688 OT-143) PACKAGEOUTUNE39R NE68818-T1 NE68819-T1 NE68830-T1 NE68833-T1 NE68839-T1 NE68839R-T1 Vo 80500 TRANSISTOR ST 80500 ap 4606 ST 80500 transistor q 1257 transistor IR 9342 2110 transistor NE68819 SOT143 L03 0828 30400	PDF
NE68839 Abstract: No abstract text available Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR FEATURES NE69039 OUTLINE DIMENSIONS OUTPUT POWER AT 1dB COMPRESSION POINT: 27.5 dBm TYP 0 F = 1.9 GHz, Vce = 3.6 V, Class AB, Duty 1/8 Units in mm PACKAGE OUTLINE 39 +0.2 2 .8 4 PIN MINI MOLD PACKAGE: NE69039	OCR Scan	NE69039 NE69039 24-Hour NE68839	PDF
NE68018 Abstract: No abstract text available Text: Low Noise Bipolar Transistors i ir * J * k ji W ft •i íU fÁ A Vac S I P W W NF - fi* ' VtP t y p m tm VCE V) (Sm I* Ic TYP (mA) (dB) tr W tfce iiS lS 1 PÉ TtP «m SURFACE MOUNT PLASTIC Faxon PÄ M w SS Daratnd Doc No. NE68018 2.0 6 5 1.8 10.0 6 10	OCR Scan	OT-23) NE68018	PDF
NE68019 Abstract: NE68839 NE68018 NE68719 Text: Surface Mount Bipolar Transistors for Low Current, Low Voltage Applications - ” „ ft. -.H r* VCE lc TYP V (m A) (dB) •Wf, ,-fc « &€ MAX SOT-343 STYLE 4 PIN SUPER MINI MOLD NE68018 1.0 1 1 1.5 12.0 1.0 1 12.5 10.0 100 35 320 NE68118 1.0 2.5 3	OCR Scan	NE68018 NE68118 NE68518 NE68618 NE68718 NE68818 NE85618 OT-343 NE68019 NE68119 NE68839 NE68719	PDF
NE68839 Abstract: No abstract text available Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIALTRANSISTOR FEATURES NE69039 OUTLINE DIMENSIONS OUTPUT POWER AT 1dB COMPRESSION POINT: 27.5 dBm TYP @F= 1.9 GHz, V c e = 3.6 V, Class AB, Duty 1/8 Units in mm PACKAGE OUTLINE 39 4 PIN MINI MOLD PACKAGE: NE69039	OCR Scan	NE69039 NE69039 NE69039-T1 NE68839 NE68939 uPC2771T NE6S939 NE68839	PDF

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NE68839 Search Results

NE68839 Datasheets (7)

NE68839 Datasheets Context Search

NE68839

MU 350

2SC3355 SPICE MODEL

NE68839

FET marking code g5d

nec mosfet marked v75

2SK2396

uPD16305

nf025

RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

84t MARKING

RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ

nec b1007

NE68830-T1-A

NE68819

RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

BJT BF 331

IN510

80500 TRANSISTOR

Vo 80500 TRANSISTOR

NE68839

NE68018

NE68019

NE68839