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    NE651 Price and Stock

    Panduit Corp DNE6512W

    ENCLOSURE ACCESSORY NET VERSE
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    Panduit Corp DNE6512B

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    California Eastern Laboratories (CEL) NE6510179A-A

    RF MOSFET GAAS HJ-FET 3.5V 79A
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    California Eastern Laboratories (CEL) NE651R479A-A

    RF MOSFET GAAS HJ-FET 3.5V 79A
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    California Eastern Laboratories (CEL) NE6510179A-T1-A

    RF MOSFET GAAS HJ-FET 3.5V 79A
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    NE651 Datasheets (36)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE6510179 NEC 1 W L-BAND POWER GaAs HJ-FET Original PDF
    NE6510179A California Eastern Laboratories NECs 3W L&S-BAND MEDIUM POWER GaAs HJ-FET Original PDF
    NE6510179A NEC 1W, L/S-BAND MEDIUM POWER GaAs HJ-FET Original PDF
    NE6510179A NEC Semiconductor Selection Guide Original PDF
    NE6510179A NEC 1 W L-BAND POWER GaAs HJ-FET Original PDF
    NE6510179A NEC 1W, L/S-BAND MEDIUM POWER GaAs HJ-FET Scan PDF
    NE6510179A-A NEC TRANS JFET N-CH 8V 720MA BULK Original PDF
    NE6510179A-EVPW19 California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD NE6510179A 1.9GHZ Original PDF
    NE6510179A-EVPW24 California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD NE6510179A 2.4GHZ Original PDF
    NE6510179A-EVPW26 California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD NE6510179A 2.6GHZ Original PDF
    NE6510179A-EVPW35 California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD NE6510179A 3.5GHZ Original PDF
    NE6510179A-T1 California Eastern Laboratories NECs 3W L&S-BAND MEDIUM POWER GaAs HJ-FET Original PDF
    NE6510179A-T1 NEC 1 W L-BAND POWER GaAs HJ-FET Original PDF
    NE6510179A-T1 NEC 1 W L-Band Power GaAs HJ-FET Original PDF
    NE6510179A-T1 NEC 1W, L/S-BAND MEDIUM POWER GaAs HJ-FET Scan PDF
    NE6510179A-T1-A California Eastern Laboratories RF FETs, Discrete Semiconductor Products, HJ-FET GAAS 1.9GHZ 1W 79A Original PDF
    NE6510179A-T1-AZ NEC FET Transistor: 1W L-BAND POWER GaAs HJ-FET: Tape And Reel Original PDF
    NE6510379A NEC Semiconductor Selection Guide Original PDF
    NE6510379A NEC FET Transistor, 3W L-BAND Power GaAs HJ-FET Original PDF
    NE6510379A NEC 3 W L-BAND POWER GaAs HJ-FET Original PDF

    NE651 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1E-16

    Abstract: No abstract text available
    Text: NONLINEAR MODEL NE6510179A SCHEMATIC Q1 RDX 0.2 ohms LGX LG 0.001 nH 0.75 nH LD 0.65 nH LDX 0.01 nH DRAIN RDBX 400 ohms GATE CDS PKG 0.1 pF CBSX 100 pF CGS PKG 0.1 pF RSX 0.05 ohms LSX 0.001 nH SOURCE FET NONLINEAR MODEL PARAMETERS 1 UNITS Parameters Q1


    Original     		PDF NE6510179A 1e-16 10e-12 5e-12 20e-12 4e-12 24-Hour

    max 16801 pspice

    Abstract: 40J100
    Text: 0.4 W, L&S-BAND MEDIUM POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,


    Original     		PDF NE651R479A IMT-2000, NE6501R479A IR35-00-2 24-Hour max 16801 pspice 40J100

    Untitled

    Abstract: No abstract text available
    Text: 1W, L/S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: POUT = +31.5 dBm TYP at VDS = 3.5 V, f = 900 MHz POUT = +32.5 dBm TYP at VDS = 3.5 V, f = 1900 MHz


    Original     		PDF NE6510179A 24-Hour

    6822 FET

    Abstract: No abstract text available
    Text: 0.4 W, L&S-BAND MEDIUM POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,


    Original     		PDF NE651R479A IMT-2000, NE6501R479A IR35-00-2 24-Hour 6822 FET

    NE6510179A

    Abstract: NE6510179A-T1
    Text: DATA SHEET N-CHANNEL GaAs HJ-FET NE6510179A 1 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510179A is a 1 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems. It is capable of delivering 1 W of output power CW with high linear


    Original     		PDF NE6510179A NE6510179A NE6510179A-T1

    nec k 4145

    Abstract: NE6510179A NE6510379A NE651R479A NE651R479A-T1
    Text: DATA SHEET N-CHANNEL GaAs HJ-FET NE651R479A 0.4 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems. It is capable of delivering 0.4 W of output power CW with high linear


    Original     		PDF NE651R479A NE651R479A NE6510179A NE6510379A. nec k 4145 NE6510379A NE651R479A-T1

    NE6510179A

    Abstract: No abstract text available
    Text: 1W, L/S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: POUT = +31.5 dBm TYP at VDS = 3.5 V, f = 900 MHz POUT = +32.5 dBm TYP at VDS = 3.5 V, f = 1900 MHz


    Original     		PDF NE6510179A 24-Hour

    100A5R1CP150X

    Abstract: IMT-2000 NE651R479A NE651R479A-A NE651R479A-T1-A ATC 1084
    Text: NEC's 1 W, L&S-BAND MEDIUM POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,


    Original     		PDF NE651R479A IMT-2000, NE651R479A 100A5R1CP150X IMT-2000 NE651R479A-A NE651R479A-T1-A ATC 1084

    NE6510179A

    Abstract: No abstract text available
    Text: 3W, L&S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A 1.5 – 0.2 4.2 MAX • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,


    Original     		PDF NE6510179A IMT-2000, 24-Hour

    MCR03J

    Abstract: IMT-2000 NE6510179A NE6510179A-A 100A4R7CP150X AF127 IC 13700 NE6510179AT1A
    Text: NEC's 3W, L&S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A 1.5 – 0.2 4.2 MAX • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,


    Original     		PDF NE6510179A IMT-2000, MCR03J IMT-2000 NE6510179A NE6510179A-A 100A4R7CP150X AF127 IC 13700 NE6510179AT1A

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET N-CHANNEL GaAs HJ-FET NE651R479A 0.4 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems. It is capable of delivering 0.4 W of output power CW with high linear


    Original     		PDF NE651R479A NE651R479A NE6510179A NE6510379A.

    NE6510179A

    Abstract: No abstract text available
    Text: 1W, L/S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A 1.5 – 0.2 4.2 MAX • HIGH OUTPUT POWER: POUT = +31.5 dBm TYP at VDS = 3.5 V, f = 900 MHz POUT = +32.5 dBm TYP at VDS = 3.5 V, f = 1900 MHz


    Original     		PDF NE6510179A 24-Hour

    NE6510179A

    Abstract: NE6510379A NE651R479A NE651R479A-T1
    Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs HJ-FET NE651R479A 0.4 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 0.4 watt of output power CW with high linear gain, high


    Original     		PDF NE651R479A NE651R479A NE6510179A NE6510379A. NE6510379A NE651R479A-T1

    NE6510379A

    Abstract: NE6510379A-T1 0949 NEC TANTALUM
    Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs HJ-FET NE6510379A 3 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510379A is a 3 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 3 watt of output power 1/3 Duty pulse operation with high linear


    Original     		PDF NE6510379A NE6510379A NE6510379A-T1 0949 NEC TANTALUM

    NE6510379A

    Abstract: NE6510379A-T1 nec 1761 hjfet application
    Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs HJ-FET NE6510379A 3 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510379A is a 3 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 3 W of output power with high linear gain, high efficiency and


    Original     		PDF NE6510379A NE6510379A NE6510379A-T1 nec 1761 hjfet application

    NE6510179A

    Abstract: NE65 ms 16881
    Text: 3W, L&S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A 1.5 – 0.2 4.2 MAX • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,


    Original     		PDF NE6510179A IMT-2000, 24-Hour NE65 ms 16881

    NE6510179A

    Abstract: NE650103M NE651R479A
    Text: NEC Discrete Power Devices www.cel.com GaAs Driver Devices Typical Specifications @ TC = 25°C Power & Gain Frequency Linear Range P1dB POUT PIN Gain GHz (dBm) (dBm) (dBm) (dB) Part Number NE651R479A 0.8 to 3.7 — NE6510179A 0.8 to 3.7 — NE650103M 0.8 to 2.7


    Original     		PDF NE651R479A NE6510179A NE650103M NE6510179A NE650103M NE651R479A

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs HJ-FET NE6510379A 3 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510379A is a 3 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 3 watt of output power 1/3 Duty pulse operation with high linear


    OCR Scan     		PDF NE6510379A NE6510379A

    x 1535 ce

    Abstract: 0537
    Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs HJ-FET NE651R479A 0.4 W L-BAND POWER GaAs HJ-FET DESCRIPTION The N E 651R 479A .is a 0.4 W G a A s HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 0.4 watt of output power CW with high linear gain, high


    OCR Scan     		PDF NE651R479A NE6510179A NE6510379A. x 1535 ce 0537

    NEC k 1760

    Abstract: NE6510179A
    Text: PRELIMINARY DATA SHEET 1W, L/S-BAND MEDIUM POWER GaAs HJ-FET OUTLINE DIMENSIONS FEATURES NE6510179A Units in mm LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A HIGH OUTPUT POWER: +31.5 dBm TYP @ V d s = 3.5 V, Id s q = 150 mA, f = 850 MHz, Pin = +20 dBm


    OCR Scan     		PDF NE6510179A NE6510179A-T1 24-Hour NEC k 1760 NE6510179A

    a 1232 nec

    Abstract: NE6510179A nec 1565 NEC TANTALUM
    Text: DATA SHEET N-CHANNEL GaAs HJ-FET NE6510179A 1W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510179A is a 1YV GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 1 watt of output power CW with high linear gain, high efficiency


    OCR Scan     		PDF NE6510179A NE6510179A a 1232 nec nec 1565 NEC TANTALUM

    NE6510179A

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 1W, L/S-BAND MEDIUM POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS NE6510179A Units in mm LOW COST PLASTIC SURFACE MOUNT PACKAGE HIGH OUTPUT POWER: +31.5 dBm TYP @ Vds = 3.5 V, Idsq = 150 mA, 1 = 850 MHz, Pin = +20 dBm +32.0 dBm TYP @ V ds = 3.2 V, Idsq = 200 mA,


    OCR Scan     		PDF NE6510179A NE6510179A-T1 NE6510179A

    NE6510179A

    Abstract: hjfet
    Text: PRELIMINARY DATA SHEET 1W, L/S-BAND MEDIUM POWER GaAs HJ-FET OUTLINE DIMENSIONS FEATURES NE6510179A Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER:+31.5 dBm TYP @ Vds = 3.5 V, Idsq = 150 mA, f = 850 MHz, Pin = +20 dBm


    OCR Scan     		PDF NE6510179A NE6510179A hjfet

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET_ N-CHANNEL GaAs HJ-FET N E 6 5 1 1 7 9 A 1W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510179A is a 1W GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 1 watt of output power CW with high linear gain, high efficiency


    OCR Scan     		PDF NE6510179A NE6510179A