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Nexperia PNE650200EJ-QJ PNE650200EJ-Q/SOT8018/TO263-2L
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PNE650200EJ-QJ	Cut Tape	800		1	1 $1.31 10 $0.95 100 $0.7624 1000 $0.71544 10000 $0.71544	Buy Now
	PNE650200EJ-QJ	Digi-Reel	800		1	1 $1.31 10 $0.95 100 $0.7624 1000 $0.71544 10000 $0.71544	Buy Now
	PNE650200EJ-QJ	Reel	800		800	1 - 10 - 100 - 1000 $0.67083 10000 $0.61584	Buy Now
Avnet Americas	PNE650200EJ-QJ	Reel			1,600	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	PNE650200EJ-QJ		800			1 $1.47 10 $1.21 100 $0.937 1000 $0.635 10000 $0.624	Buy Now
Newark	PNE650200EJ-QJ	Cut Tape			1	1 $1.57 10 $1.29 100 $1 1000 $0.851 10000 $0.693	Buy Now
TTI	PNE650200EJ-QJ	Reel			1,600	1 - 10 - 100 - 1000 - 10000 $0.569	Buy Now
Nexperia PNE650100EJ-QJ PNE650100EJ-Q/SOT8018/TO263-2L
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PNE650100EJ-QJ	Cut Tape	800		1	1 $0.97 10 $0.699 100 $0.5549 1000 $0.51904 10000 $0.51904	Buy Now
	PNE650100EJ-QJ	Digi-Reel	800		1	1 $0.97 10 $0.699 100 $0.5549 1000 $0.51904 10000 $0.51904	Buy Now
	PNE650100EJ-QJ	Reel	800		800	1 - 10 - 100 - 1000 $0.48493 10000 $0.4429	Buy Now
Avnet Americas	PNE650100EJ-QJ	Reel			1,600	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	PNE650100EJ-QJ		800			1 $1.05 10 $0.861 100 $0.67 1000 $0.462 10000 $0.457	Buy Now
Newark	PNE650100EJ-QJ	Cut Tape			1	1 $1.75 10 $1.1 100 $0.746 1000 $0.653 10000 $0.653	Buy Now
TTI	PNE650100EJ-QJ	Reel			1,600	1 - 10 - 100 - 1000 - 10000 $0.407	Buy Now
Nexperia PNE650150EJ-QJ PNE650150EJ-Q/SOT8018/TO263-2L
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PNE650150EJ-QJ	Reel	800		800	1 - 10 - 100 - 1000 $0.55488 10000 $0.50788	Buy Now
	PNE650150EJ-QJ	Digi-Reel	800		1	1 $1.1 10 $0.794 100 $0.6331 1000 $0.593 10000 $0.593	Buy Now
	PNE650150EJ-QJ	Cut Tape	800		1	1 $1.1 10 $0.794 100 $0.6331 1000 $0.593 10000 $0.593	Buy Now
Avnet Americas	PNE650150EJ-QJ	Reel			1,600	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	PNE650150EJ-QJ		800			1 $1.2 10 $0.989 100 $0.769 1000 $0.531 10000 $0.467	Buy Now
Newark	PNE650150EJ-QJ	Cut Tape	800		1	1 $1.29 10 $1.05 100 $0.825 1000 $0.699 10000 $0.569	Buy Now
TTI	PNE650150EJ-QJ	Reel			1,600	1 - 10 - 100 - 1000 - 10000 $0.468	Buy Now
California Eastern Laboratories (CEL) NE650103M-A RF MOSFET 10V 3M
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NE650103M-A	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Nexperia PNE650150EJJ PNE650150EJ/SOT8018/TO263-2L
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PNE650150EJJ	Digi-Reel			1	1 $1.05 10 $0.759 100 $0.6047 1000 $0.56608 10000 $0.56608	Buy Now
	PNE650150EJJ	Reel			800	1 - 10 - 100 - 1000 $0.5294 10000 $0.4842	Buy Now
	PNE650150EJJ	Cut Tape			1	1 $1.05 10 $0.759 100 $0.6047 1000 $0.56608 10000 $0.56608	Buy Now
Avnet Americas	PNE650150EJJ	Reel			1,600	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	PNE650150EJJ					1 $1.15 10 $0.943 100 $0.733 1000 $0.506 10000 $0.5	Get Quote
Newark	PNE650150EJJ	Cut Tape			1	1 $1.86 10 $1.19 100 $0.802 1000 $0.703 10000 $0.703	Buy Now
TTI	PNE650150EJJ	Reel			1,600	1 - 10 - 100 - 1000 - 10000 $0.446	Buy Now

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NE650 Datasheets (37)

Part	Manufacturer	Description	Datasheet Type	PDF
NE6500179A	NEC	1 W L-BAND POWER GaAs MES FET	Original	PDF
NE6500179A-T1	NEC	1 W L-Band Power GaAs MES FET	Original	PDF
NE6500179A-T1-AZ	NEC	FET Transistor: 1W L-BAND POWER GaAs MESFET: Tape And Reel	Original	PDF
NE6500379	NEC	3W L, S-BAND POWER GaAs MESFET	Original	PDF
NE6500379A	NEC	3W, L/S-BAND MEDIUM POWER GaAs MESFET	Original	PDF
NE6500379A	NEC	3W L, S-BAND POWER GaAs MESFET	Original	PDF
NE6500379A	NEC	Semiconductor Selection Guide	Original	PDF
NE6500379A	NEC	3W, L/S-BAND MEDIUM POWER GaAs MESFET	Scan	PDF
NE6500379A-AZ	NEC	IC FET MISC MEDIUM POWER GaAs MESFET	Original	PDF
NE6500379A-T1	NEC	3 W L, S-Band Power GaAs MESFET	Original	PDF
NE6500379A-T1	NEC	3W, L/S-BAND MEDIUM POWER GaAs MESFET	Scan	PDF
NE6500496	NEC	Semiconductor Selection Guide	Original	PDF
NE6500496	NEC	4 W L, S-Band Power GaAs FET N-Channel GaAs MES FET	Original	PDF
NE6500496	NEC	L&S BAND MEDIUM POWER GaAs MESFET	Original	PDF

NE6500496	NEC	Semiconductor Selection Guide 1995	Original	PDF
NE6500496-AZ	NEC	FET Transistor: 4W L: S-BAND POWER GaAs FET: N-CHANNEL GaAs MESFET	Original	PDF
NE650103M	California Eastern Laboratories	10 W L & S-BAND POWER GaAs MESFET	Original	PDF
NE650103M	California Eastern Laboratories	NECS 10 W L & S-BAND POWER GaAs MESFET	Original	PDF
NE650103M	NEC	10 W L, S-BAND POWER GaAs MES FET	Original	PDF
NE650103M-A	California Eastern Laboratories	10 W L & S-BAND POWER GaAs MESFET	Original	PDF

NE650 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: 3W, L & S-BAND NE6500379A MEDIUM POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A Source • LOW THERMAL RESISTANCE: 5°C/W Functional Characteristics 0.2 ± 0.1	Original	PDF	NE6500379A IMT-2000, IMT2000, 24-Hour
NE6501077 Abstract: NEC Microwave Semiconductors Text: PRELIMINARY DATA SHEET L/S BAND MEDIUM POWER GaAs MESFET NE6501077 ABSOLUTE MAXIMUM RATINGS FEATURES TC = 25 °C unless otherwise noted • HIGH OUTPUT POWER: 10 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 10.5 dB VDSX Drain to Source Voltage	Original	PDF	NE6501077 NE6501077 24-Hour NEC Microwave Semiconductors
NE6500379A Abstract: NE6500379A-T1 Text: PRELIMINARY DATA SHEET 3W, L/S-BAND MEDIUM POWER NE6500379A GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35 dBm TYP • HIGH LINEAR GAIN: 10 dB TYP 5.5 BOTTOM 3.8	Original	PDF	NE6500379A NE6500379A NE6500379A-T1 24-Hour NE6500379A-T1
NEC 7808 Abstract: gl 7808 NE6500179A NE6500179A-T1 7808 nec Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE6500179A 1 W L-BAND POWER GaAs MES FET DESCRIPTION The NE6500179A is a 1 W GaAs MES FET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 1 W of output power CW with high	Original	PDF	NE6500179A NE6500179A NE6500179A-T1 NEC 7808 gl 7808 NE6500179A-T1 7808 nec
Untitled Abstract: No abstract text available Text: NONLINEAR MODEL NE6500379A SCHEMATIC Q1 RDX 0.2 ohms LGX LG 0.001 nH 0.68 nH LD 0.55 nH LDX 0.015 nH DRAIN RDBX 480 ohms GATE CBSX 100 pF CGS PKG 0.1 pF CDS PKG 0.1 pF RSX 0.2 ohms FET NONLINEAR MODEL PARAMETERS 1 LSX 0.001 nH SOURCE Parameters Q1 Parameters	Original	PDF	NE6500379A 1e-14 10e-12 5e-12 25e-12
nec 0882 Abstract: No abstract text available Text: 3W, L/S-BAND MEDIUM POWER NE6500379A GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35 dBm TYP 1.5 – 0.2 4.2 MAX Source • HIGH LINEAR GAIN: 10 dB TYP Drain Drain	Original	PDF	NE6500379A 24-Hour nec 0882
NEC 2561 Abstract: 2561 nec NEC semiconductor 2561 17-33 0952 2561 a nec NE6501077 nec 0882 p 2 nec 2561 4 pin Text: PRELIMINARY DATA SHEET GaAs MES FET NE6501077 10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NE6501077 is power GaAs FET which provides high gain, high efficiency and high output power in L, S 17.5 ±0.5	Original	PDF	NE6501077 NE6501077 NEC 2561 2561 nec NEC semiconductor 2561 17-33 0952 2561 a nec nec 0882 p 2 nec 2561 4 pin
NE6500496 Abstract: 094-3 MAG Text: PRELIMINARY DATA SHEET GaAs MES FET NE6500496 4 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET PACKAGE DIMENSION UNIT: mm DESCRIPTION The NE6500496 is power GaAs FET which provides high gain, high efficiency and high output power in L, S band. 1.0 ± 0.1	Original	PDF	NE6500496 NE6500496 094-3 MAG
NE6500379A Abstract: NE650R279A NE650R279A-T1 Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE650R279A 0.2 W L, S-BAND POWER GaAs MES FET DESCRIPTION The NE650R279A is a 0.2 W GaAs MES FET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 0.2 watt of output power CW with high	Original	PDF	NE650R279A NE650R279A NE6500379A NE650R279A-T1
nec 0882 Abstract: NEc 79A 8582 Text: 3W, L/S-BAND NE6500379A MEDIUM POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A Source • LOW THERMAL RESISTANCE: 5 C/W Functional Characteristics 0.2 – 0.1	Original	PDF	NE6500379A IMT-2000, IMT2000, 24-Hour nec 0882 NEc 79A 8582
NE6510179A Abstract: NE650103M NE651R479A Text: NEC Discrete Power Devices www.cel.com GaAs Driver Devices Typical Specifications @ TC = 25°C Power & Gain Frequency Linear Range P1dB POUT PIN Gain GHz (dBm) (dBm) (dBm) (dB) Part Number NE651R479A 0.8 to 3.7 — NE6510179A 0.8 to 3.7 — NE650103M 0.8 to 2.7	Original	PDF	NE651R479A NE6510179A NE650103M NE6510179A NE650103M NE651R479A
NE6500496 Abstract: 173300 NEC Microwave Semiconductors Text: L&S BAND MEDIUM POWER GaAs MESFET NE6500496 ABSOLUTE MAXIMUM RATINGS FEATURES TC= 25 °C unless otherwise noted • HIGH OUTPUT POWER: 4 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 11.5 dB VDSX Drain to Source Voltage V 15 • HIGH EFFICIENCY (PAE): 45%	Original	PDF	NE6500496 NE6500496 24-Hour 173300 NEC Microwave Semiconductors
NE6500496 Abstract: NEC Microwave Semiconductors Text: PRELIMINARY DATA SHEET L/S BAND MEDIUM POWER GaAs MESFET NE6500496 ABSOLUTE MAXIMUM RATINGS FEATURES TC= 25 °C unless otherwise noted • HIGH OUTPUT POWER: 4 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 11.5 dB VDSX Drain to Source Voltage	Original	PDF	NE6500496 NE6500496 24-Hour NEC Microwave Semiconductors
NE6501077 Abstract: NEC Microwave Semiconductors nec microwave Text: L/S BAND MEDIUM POWER GaAs MESFET NE6501077 ABSOLUTE MAXIMUM RATINGS FEATURES TC = 25 °C unless otherwise noted • HIGH OUTPUT POWER: 10 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 10.5 dB VDSX Drain to Source Voltage V 15 • HIGH EFFICIENCY: 40%	Original	PDF	NE6501077 NE6501077 24-Hour NEC Microwave Semiconductors nec microwave

Untitled Abstract: No abstract text available Text: DATA SHEET_ N-CHANNEL GaAs MES FET NE6500379A 3W L, S-BAND POWER GaAs MESFET DESCRIPTION The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 3 watt of output power CW with high	OCR Scan	PDF	NE6500379A NE6500379A NE6500379A-T1
sn 0716 Abstract: NEC D 587 Text: PRELIMINARY DATA SHEET GaAs MES FET NE6500496 4W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET PACKAGE DIMENSION UNIT: mm DESCRIPTION The NE6500496 is power GaAs FET which provides high gain, high efficiency and high output power in L, S band. 1.0 ± 0.1	OCR Scan	PDF	NE6500496 NE6500496 sn 0716 NEC D 587
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE650R479A 0.4 W L, S-BAND POWER GaAs MES FET DESCRIPTION The N E 6 5 0 R 4 7 9 A is a 0.4 W G aA s M ES FET d e sig n e d fo r m iddle po w e r tra n sm itte r ap p lica tio n s for m obile co m m u n ica tio n ha nd set and base statio n system s. It is ca p a b le o f d e live rin g 0 .4 w a tt o f o u tp u t po w e r C W w ith high	OCR Scan	PDF	NE650R479A
NEC Microwave Semiconductors Abstract: No abstract text available Text: PRELIMINARY DATA SHEET US BAND MEDIUM POWER GaAs MESFET NE6500496 ABSOLUTE MAXIMUM RATINGS FEATURES_ Tc= 25 °C unless otherwise noted • HIGH OUTPUT POWER: 4 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 11.5 dB V d sx Drain to Source Voltage	OCR Scan	PDF	NE6500496 NE6500496 IS12I IS22I2 IS12S21I NEC Microwave Semiconductors
NE650 Abstract: No abstract text available Text: PRELIMINARY DATA SHEET US BAND MEDIUM POWER GaAs MESFET NE6501077 ABSOLUTE MAXIMUM RATINGS FEATURES_ ; Tc = 25 °C unless otherwise noted • HIGH OUTPUT POWER: 10 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH UNEAR GAIN: 10.5 dB V dsx Drain to Source Voltage	OCR Scan	PDF	NE6501077 NE6501077 IS12I IS22I2 IS12I IS12S21I CA95054-1B17 24-Hour NE650
nec 0882 Abstract: GRM40X7R104K025BL nec ic 8582 nec d 882 p 100A470CP150X tajb475*010r NE6500379A NE6500379A-T1 GRM40-X7R104K025BL TF-100637 Text: 3W, L/S-BAND MEDIUM POWER GaAs MESFET NE6500379A OUTLINE DIMENSIONS FEATURES Units in mm • LOW C OST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35 dBm TYP • HIGH LINEAR GAIN: 10 dB TYP • HIGH POWER ADDED EFFICIENCY: 50% TYP @	OCR Scan	PDF	NE6500379A NE6500379A 24-Hour nec 0882 GRM40X7R104K025BL nec ic 8582 nec d 882 p 100A470CP150X tajb475*010r NE6500379A-T1 GRM40-X7R104K025BL TF-100637
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET 3W, L/S-BAND MEDIUM POWER GaAs MESFET OUTLINE DIMENSIONS FEATURES NE6500379A Units in mm LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A HIGH OUTPUT POWER: +35 dBm TYP HIGH LINEAR GAIN: 10 dB TYP HIGH POWER ADDED EFFICIENCY: 50% TYP @	OCR Scan	PDF	NE6500379A NE6500379A NE6500379A-T1 24-Hour
nec 358 amplifier Abstract: NEC 426 nec 1678 Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs MES FET NE650R479A 0.4 W L, S-BAND POWER GaAs MES FET DESCRIPTION The NE650R479A is a 0.4 W GaAs MES FET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 0.4 watt of output power CW with high	OCR Scan	PDF	NE650R479A NE650R479A NE6500379A nec 358 amplifier NEC 426 nec 1678
NEC 2561 Abstract: sn 1699 NEC 2561 E 2561 a nec sn 0952 2561 nec nec d 1590 NEC semiconductor 2561 NEC 1357 NEC 2561 h Text: PRELIMINARY DATA SHEET GaAs MES FET NE6501077 10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET D E S C R IP T IO N PACKAGE DIMENSIONS UNIT: mm The NE6501077 is power GaAs FET which provides high gain, high efficiency and high output power in L, S band.	OCR Scan	PDF	NE6501077 NE6501077 NEC 2561 sn 1699 NEC 2561 E 2561 a nec sn 0952 2561 nec nec d 1590 NEC semiconductor 2561 NEC 1357 NEC 2561 h
NE650N Abstract: ne650 dolby circuit NE Dolby encoder NE65 "magnetic tape" Text: NE650 Dolby B-Type Noise Reduction Circuit Product Specification DESCRIPTION PIN CONFIGURATION The N E650 features excellent dynamic characteristics over a wide range of operating conditions and is pin-compati ble with N E 6 4 5 /6 4 6 . This circuit is avail	OCR Scan	PDF	NE650 NE650 NE650N dolby circuit NE Dolby encoder NE65 "magnetic tape"

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Nexperia PNE650200EJ-QJ

Nexperia PNE650100EJ-QJ

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California Eastern Laboratories (CEL) NE650103M-A

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NE650 Datasheets (37)

NE650 Datasheets Context Search

Untitled

NE6501077

NE6500379A

NEC 7808

Untitled

nec 0882

NEC 2561

NE6500496

NE6500379A

nec 0882

NE6510179A

NE6500496

NE6500496

NE6501077

Untitled

sn 0716

Untitled

NEC Microwave Semiconductors

NE650

nec 0882

Untitled

nec 358 amplifier

NEC 2561

NE650N