NE5520379A-T1 Search Results
NE5520379A-T1 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TLK106RHBR |
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Industrial Temp, Single Port 10/100Mbs Ethernet Physical Layer Transceiver 32-VQFN 0 to 0 | |||
TLK106RHBT |
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Industrial Temp, Single Port 10/100Mbs Ethernet Physical Layer Transceiver 32-VQFN 0 to 0 | |||
SN65LVCP1414RLJT |
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14.2-GBPS Quad Channel, Dual Mode Linear Equalizer 38-WQFN -40 to 85 | |||
DP83848QSQ/NOPB |
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Extended temperature, single port 10/100 Mb/s PHYTER™ Ethernet physical layer transceiver 40-WQFN -40 to 105 | |||
DP83910AV/NOPB |
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CMOS SNI Serial Network Interface 28-PLCC 0 to 70 |
NE5520379A-T1 Price and Stock
California Eastern Laboratories (CEL) NE5520379A-T1A-ARF MOSFET LDMOS 3.2V 79A |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NE5520379A-T1A-A | Cut Tape |
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Buy Now | |||||||
Renesas Electronics Corporation NE5520379AT1A3.2 V OPERATION SILICON RF POWER LDMOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NE5520379AT1A | 13,000 |
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Get Quote |
NE5520379A-T1 Datasheets (6)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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NE5520379A-T1 |
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3.2 V Operation Silicon RF Power LDMOS FET for GSM/DCS Dual-Band Phone Transmission Amplifiers | Original | |||
NE5520379A-T1A |
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3.2 V 3 W L&s Band Medium Power Silicon LD-MOSFET(261) | Original | |||
NE5520379A-T1A |
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Transistor - Datasheet Reference | Original | |||
NE5520379A-T1A |
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3.2 V Operation Silicon RF Power LDMOS FET for GSM/DCS Dual-Band Phone Transmission Amplifiers | Original | |||
NE5520379A-T1A |
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NECs 3.2 V, 3 W, L/S band medium power silicon LD-MOSFET. | Original | |||
NE5520379A-T1A-A |
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NECs 3.2v 3w L/s Band Medium Power Silicon Ld-mosfet | Original |