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    NE35 Price and Stock

    Amphenol Aerospace D38999-25NE35PN

    HERMETIC CIRCULAR MIL-SPEC CONNE
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    Delkin Devices DE32TNKNE-35000-D

    32GB SLC 2.5" SSD SATA III I-TEM
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    Delkin Devices DE64TNKNE-35000-D

    64GB SLC 2.5" SSD SATA III I-TEM
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    Delkin Devices DE2HTNJNE-35000-D

    256GB SLC 2.5" SSD SATA III I-TE
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    Delkin Devices DE1HTNJNE-35000-D

    128GB SLC 2.5" SSD SATA III I-TE
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    NE35 Datasheets (60)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE350184C California Eastern Laboratories HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET Original PDF
    NE350184C-T1 California Eastern Laboratories HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET Original PDF
    NE350184C-T1A California Eastern Laboratories HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET Original PDF
    NE3503M04 California Eastern Laboratories SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNER HJ-FET Original PDF
    NE3503M04 NEC C To Ku Band Super Low Noise and High-Gain Amplifier N-Channel HJ-FET Original PDF
    NE3503M04-A California Eastern Laboratories RF FETs, Discrete Semiconductor Products, AMP HJ-FET 12GHZ M04 Original PDF
    NE3503M04-A California Eastern Laboratories NECs C TO Ku BAND SUPER LOW NOISE and HIGH-GAIN AMPLIFIER N-CHANNER HJ-FET Original PDF
    NE3503M04-T2 NEC Original PDF
    NE3503M04-T2-A California Eastern Laboratories RF FETs, Discrete Semiconductor Products, AMP HJ-FET 12GHZ M04 Original PDF
    NE3503M04-T2-A California Eastern Laboratories NECs C TO Ku BAND SUPER LOW NOISE and HIGH-GAIN AMPLIFIER N-CHANNER HJ-FET Original PDF
    NE3503M04-T2B-A CEL Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - FET RF 4V 12GHZ M04 Original PDF
    NE3508M04 California Eastern Laboratories HETERO JUNCTION FIELD EFFECT TRANSISITOR Original PDF
    NE3508M04-A California Eastern Laboratories RF FETs, Discrete Semiconductor Products, AMP HJ-FET 2GHZ 4-TSMM Original PDF
    NE3508M04-A California Eastern Laboratories HETERO JUNCTION FIELD EFFECT TRANSISITOR Original PDF
    NE3508M04-EVNF23-A California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL DEV RF NE3508M04 Original PDF
    NE3508M04-T2 California Eastern Laboratories L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET Original PDF
    NE3508M04-T2-A California Eastern Laboratories RF FETs, Discrete Semiconductor Products, AMP HJ-FET 2GHZ 4-TSMM Original PDF
    NE3508M04-T2-A California Eastern Laboratories HETERO JUNCTION FIELD EFFECT TRANSISITOR Original PDF
    NE3509M04 California Eastern Laboratories L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET Original PDF
    NE3509M04 California Eastern Laboratories L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET Original PDF

    NE35 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NE3505M04

    Abstract: FL-240 NEC Ga FET marking L NE3505M04-T2 ne3505
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISITOR NE3505M04 L to C BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES - Super Low Noise Figure & Associated Gain : NF=0.4dB TYP. Ga=15.5dB TYP. @f=4GHz NF=0.35dB TYP. Ga=17dB TYP. @f=2.4GHz Reference Only


    Original     		PDF NE3505M04 NE3505M04-T2 50pcs Rn/50 NE3505M04 FL-240 NEC Ga FET marking L NE3505M04-T2 ne3505

    NE3508M04

    Abstract: Power Transisitor 100V 2A NE3508M04-A NE3508M04-T2 NE3508M04-T2-A transisitor 02 p 67
    Text: PRELIMINARY PRODUCT INFORMATION HETERO JUNCTION FIELD EFFECT TRANSISITOR NE3508M04 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES - Super Low Noise Figure & Associated Gain : NF=0.45dB TYP. Ga=14dB TYP. @f=2GHz, VDS=2V, ID=10mA - Flat-lead 4-pin tin-type super mini-mold M04 package (Pb-Free T. )


    Original     		PDF NE3508M04 NE3508M04-A 50pcs NE3508M04-T2 NE3508M04-T2-A NE3508M04 Power Transisitor 100V 2A NE3508M04-A NE3508M04-T2 NE3508M04-T2-A transisitor 02 p 67

    ne3514s02

    Abstract: NE3514 NE3514S02-T1C s2p marking t1c rogers 5880 HS350 k-band amplifier
    Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3514S02 K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.75 dB TYP., Ga = 10 dB TYP. @ f = 20 GHz • Micro-X plastic S02 package APPLICATIONS


    Original     		PDF NE3514S02 NE3514S02-T1C NE3514S02-T1C-A NE3514S02-T1D NE3514S02-T1D-A NE3514S0anty ne3514s02 NE3514 NE3514S02-T1C s2p marking t1c rogers 5880 HS350 k-band amplifier

    NE3517S03

    Abstract: rt/duroid 5880 RT DUROID 5880 NE3517S03-A marking t1c rogers 5880 HS350 NE3517S03-T1D-A NE3517S03-T1C rt duroid
    Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3517S03 K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET FEATURES • Super low noise figure, high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • K-band Micro-X plastic S03 package APPLICATIONS


    Original     		PDF NE3517S03 NE3517S03-T1C NE3517S03-T1C-A NE3517S03-T1D NE3517S03-T1D-A NE3517S03 rt/duroid 5880 RT DUROID 5880 NE3517S03-A marking t1c rogers 5880 HS350 NE3517S03-T1D-A NE3517S03-T1C rt duroid

    NE3515S02

    Abstract: transistor "micro-x" "marking" 3 NE3515S02-T1C-A ne3515 NE3515S02-T1D-A duroid 5880 RT DUROID 5880 X KU-BAND GAAS HS350 ir260
    Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3515S02 X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure, high associated gain and middle output power NF = 0.3 dB TYP., Ga = 12.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA


    Original     		PDF NE3515S02 NE3515S02-T1C NE3515S02-T1D NE3515S02-T1C-A NE3515S02-T1D-A PG10708EJ01V0DS NE3515S02 transistor "micro-x" "marking" 3 ne3515 duroid 5880 RT DUROID 5880 X KU-BAND GAAS HS350 ir260

    transistor marking v75 ghz

    Abstract: NE3503M04 PG10456EJ01V1DS HS350 NE3503M04-T2 nec marking power amplifier nec microwave m04 marking NE3503
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3503M04 C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.55 dB TYP., Ga = 11.5 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz


    Original     		PDF NE3503M04 NE3503M04-T2 transistor marking v75 ghz NE3503M04 PG10456EJ01V1DS HS350 NE3503M04-T2 nec marking power amplifier nec microwave m04 marking NE3503

    NE350184C

    Abstract: NE350184C-T1A-A rogers 5880 rt/duroid 5880 17802A GA-13 HS350 NE350184C-T1 NE350184C-T1A k-band amplifier
    Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE350184C K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • Micro-X ceramic 84C package APPLICATIONS


    Original     		PDF NE350184C NE350184C-T1 NE350184C-T1-A NE350184C-T1A NE350184C-T1A-A NE350anty NE350184C NE350184C-T1A-A rogers 5880 rt/duroid 5880 17802A GA-13 HS350 NE350184C-T1 NE350184C-T1A k-band amplifier

    V75 marking

    Abstract: NE3503M04-A transistor marking v75 ghz LNB ku band HS350 NE3503M04 NE3503M04-T2-A m04 marking V75 4pin
    Text: NEC's C TO Ku BAND SUPER LOW NOISE AND NE3503M04 HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • SUPER LOW NOISE FIGURE AND HIGH ASSOCIATED GAIN: NF = 0.55 dB TYP., Ga = 11.5 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz • FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD


    Original     		PDF NE3503M04 NE3503M04-A NE3503M04-T2-A V75 marking NE3503M04-A transistor marking v75 ghz LNB ku band HS350 NE3503M04 NE3503M04-T2-A m04 marking V75 4pin

    transistor marking v80 ghz

    Abstract: HS350 NE3509M04 NE3509M04-A NE3509M04-T2 NE3509M04-T2-A NE3509 DSA0029112 NE3509M04. S2P sdars lna
    Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.4 dB TYP., Ga = 17.5 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package


    Original     		PDF NE3509M04 NE3509M04-A NE3509M04-T2 NE3509M04-T2-A transistor marking v80 ghz HS350 NE3509M04 NE3509M04-A NE3509M04-T2 NE3509M04-T2-A NE3509 DSA0029112 NE3509M04. S2P sdars lna

    NE3508M04-T2-A

    Abstract: HS350 NE3508M04 NE3508M04-A NE3508M04-T2 marking v79 ne3508
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3508M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 14 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package


    Original     		PDF NE3508M04 NE3508M04-A NE3508M04-T2 NE3508M04-T2-A NE3508M04-T2-A HS350 NE3508M04 NE3508M04-A NE3508M04-T2 marking v79 ne3508

    NE3510M04-A

    Abstract: ne3510 NE3510M04 GA-14 HS350 NE3510M04-T2 NE3510M04-T2-A PG10676EJ01V0DS sdars lna
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3510M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 16 dB TYP. @ f = 4 GHz, VDS = 2 V, ID = 15 mA NF = 0.35 dB TYP., Ga = 19 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA Reference only


    Original     		PDF NE3510M04 NE3510M04-A NE3510M04-T2 NE3510M04-T2-A NE3510M04-A ne3510 NE3510M04 GA-14 HS350 NE3510M04-T2 NE3510M04-T2-A PG10676EJ01V0DS sdars lna

    ne3511s02 s2p

    Abstract: NE3511S02 NE3511S02-T1D rt/duroid 5880 HS350 NE3511S02-T1C NE3511S02-T1C-A lnb ku-band rogers 5880
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3511S02 X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.30 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz • Micro-X plastic S02 package


    Original     		PDF NE3511S02 NE3511S02-T1C NE3511S02-T1C-A NE3511S02-T1D NE3511S02-T1D-A ne3511s02 s2p NE3511S02 NE3511S02-T1D rt/duroid 5880 HS350 NE3511S02-T1C NE3511S02-T1C-A lnb ku-band rogers 5880

    NEC Ga FET marking L

    Abstract: NE3508M04-T2B-A nec microwave NE3508M04-A NE3508M04-T2-A HS350 NE3508M04 NE3508M04-T2
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3508M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 14 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package


    Original     		PDF NE3508M04 NE3508M04-A NE3508M04-T2 NE3508M04-T2-A NE3508M04-T2B NE3508M04-T2B-A NEC Ga FET marking L NE3508M04-T2B-A nec microwave NE3508M04-A NE3508M04-T2-A HS350 NE3508M04 NE3508M04-T2

    nec v80

    Abstract: NEC Ga FET marking L HS350 NE3509M04 NE3509M04-A NE3509M04-T2 NE3509M04-T2-A
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.4 dB TYP., Ga = 17.5 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package


    Original     		PDF NE3509M04 NE3509M04-A NE3509M04-T2 NE3509M04-T2-A NE3509M04-T2B NE3509M04-T2B-A nec v80 NEC Ga FET marking L HS350 NE3509M04 NE3509M04-A NE3509M04-T2 NE3509M04-T2-A

    NE3521M04

    Abstract: marking V86
    Text: Data Sheet NE3521M04 N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain R09DS0058EJ0100 Rev.1.00 Mar 19, 2013 FEATURES • Low noise figure and high associated gain: NF = 0.85 dB TYP., Ga = 11 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 20 GHz NF = 0.9 dB TYP., Ga = 10.5 dB TYP. @VDS = 2 V, ID = 6mA, f = 20 GHz Reference Value


    Original     		PDF NE3521M04 R09DS0058EJ0100 NE3521M04-T2 NE3521M04-T2-A NE3521M04 marking V86

    RT DUROID 5880

    Abstract: NE3512 NE3512S02-T1D-A PG10592EJ01V0DS HS350
    Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3512S02 C TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.35 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz • Micro-X plastic S02 package APPLICATIONS


    Original     		PDF NE3512S02 NE3512S02-T1C NE3512S02-T1D NE3512S02-T1C-A NE3512S02-T1D-A NE3512S02-A PG10592EJ01V0DS RT DUROID 5880 NE3512 PG10592EJ01V0DS HS350

    Untitled

    Abstract: No abstract text available
    Text: 12 - 13 Witney Way Boldon Business Park, Boldon, Tyne and Wear NE35 9PE England mailto:[email protected] - Tel: +44 0191 519 1900 - Fax: (+44) 0191 519 3010 Circuit Features Description Absolute Maximum Ratings Electrical Characteristics Locate in Shortform


    Original     		PDF PTD615-1, PTD615-2, PTD615-3 PTD615-1: PDT615-2: PTD615-3: PTD615 PTD615-1 PTD615-2

    V75 marking

    Abstract: No abstract text available
    Text: NEC's C TO Ku BAND SUPER LOW NOISE AND NE3503M04 HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • SUPER LOW NOISE FIGURE AND HIGH ASSOCIATED GAIN: NF = 0.55 dB TYP., Ga = 11.5 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz • FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD


    Original     		PDF NE3503M04 NE3503M04-A NE3503M04-T2-A IR260 HS350 V75 marking

    NEC Ga FET marking L

    Abstract: a 933 transisitor NT 407 F 0429 01 2701 00 NE3509M04 NE3509 cel 502 Power Transisitor 100V 2A NE3509M04-A NE3509M04-T2
    Text: PRELIMINARY PRODUCT INFORMATION HETERO JUNCTION FIELD EFFECT TRANSISITOR NE3509M04 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES - Super Low Noise Figure & Associated Gain : NF=0.4dB TYP. Ga=17.5dB TYP. @f=2GHz, VDS=2V,ID=10mA - Flat-lead 4-pin tin-type super mini-mold M04 package (Pb-Free T. )


    Original     		PDF NE3509M04 NE3509M04-A 50pcs NE3509M04-T2 NE3509M04-T2-A NEC Ga FET marking L a 933 transisitor NT 407 F 0429 01 2701 00 NE3509M04 NE3509 cel 502 Power Transisitor 100V 2A NE3509M04-A NE3509M04-T2

    nec v80

    Abstract: transistor marking v80 ghz NE3509 HS350 NE3509M04 NE3509M04-A NE3509M04-T2 NE3509M04-T2-A NE3509M04. S2P sdars lna
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.4 dB TYP., Ga = 17.5 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package


    Original     		PDF NE3509M04 NE3509M04-A NE3509M04-T2 NE3509M04-T2-A nec v80 transistor marking v80 ghz NE3509 HS350 NE3509M04 NE3509M04-A NE3509M04-T2 NE3509M04-T2-A NE3509M04. S2P sdars lna

    NE3520S03

    Abstract: nE352
    Text: Data Sheet NE3520S03 R09DS0029EJ0100 Rev.1.00 Oct 18, 2011 N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain FEATURES • Low noise figure and high associated gain: NF = 0.65 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz, VDS = 2 V, ID = 10 mA • K band Micro-X plastic S03 package


    Original     		PDF NE3520S03 R09DS0029EJ0100 NE3520S03-T1C NE3520S03-T1C-A NE3520S03-T1D NE3520S03-T1D-A NE3520S03 nE352

    RF S-parameters

    Abstract: No abstract text available
    Text: NE3516S02 Data Sheet N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain R09DS0038EJ0100 Rev.1.00 Apr 16, 2012 Rev.1.00 Apr 16, 2012 FEATURES • Low noise figure and high associated gain NF = 0.35 dB TYP., Ga = 14 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA


    Original     		PDF NE3516S02 R09DS0038EJ0100 NE3516S02-T1C NE3516S02-T1C-A NE3516S02-T1D NE3516S02-To NE3516S02 RF S-parameters

    NE350184C

    Abstract: NE350184C-T1A ne350184c-t1-a ne350184c-t1a-a NEC Ga FET marking L HS350 NE350184C-T1 k-band amplifier
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE350184C K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • Micro-X ceramic 84C package APPLICATIONS


    Original     		PDF NE350184C NE350184C-T1 NE350184C-T1-A NE350184C-T1A NE350184C-T1A-A NE350184C NE350184C-T1A ne350184c-t1-a ne350184c-t1a-a NEC Ga FET marking L HS350 NE350184C-T1 k-band amplifier

    transistor marking v75 ghz

    Abstract: LNB ku band NE3503M04-T2B NE3503M04 NE3503M04-A HS350
    Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3503M04 C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain <R> NF = 0.45 dB TYP., Ga = 12.0 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz


    Original     		PDF NE3503M04 NE3503M04 NE3503M04-T2 NE3503M04-T2B NE3503M04-A NE3503M04-T2-A NE3503M04-T2B-A PG10456EJ03V0DS transistor marking v75 ghz LNB ku band HS350