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    onsemi 1N914-T50A

    DIODE GEN PURP 100V 200MA DO35
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    DigiKey 1N914-T50A Ammo Pack 165,000 5,000
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    Vishay Semiconductors 1N914TR

    DIODE GEN PURP 75V 200MA DO35
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    DigiKey 1N914TR Cut Tape 72,177 1
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    onsemi 1N914ATR

    DIODE GEN PURP 100V 200MA DO35
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    Rochester Electronics 1N914ATR 92,566 1
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    New Advantage Corporation 1N914ATR 40,000 1
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    onsemi 1N914TR

    DIODE GEN PURP 100V 200MA DO35
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    DigiKey 1N914TR Reel 50,000 10,000
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    Newark 1N914TR Cut Tape 5,151 1
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    Rochester Electronics 1N914TR 70,000 1
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    TME 1N914TR 1
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    Avnet Asia 1N914TR 23 Weeks 90,000
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    Avnet Silica 1N914TR 24 Weeks 10,000
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    New Advantage Corporation 1N914TR 160,000 1
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    onsemi 1N914BTR

    DIODE GEN PURP 100V 200MA DO35
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    DigiKey 1N914BTR Reel 40,000 10,000
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    1N914BTR Reel 23 Weeks, 4 Days 10,000
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    1N914BTR Cut Tape 3,431 1
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    Rochester Electronics 1N914BTR 186,261 1
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    Avnet Silica 1N914BTR 11 Weeks 10,000
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    Chip1Stop 1N914BTR Cut Tape 10,545
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    EBV Elektronik 1N914BTR 12 Weeks 10,000
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    Master Electronics 1N914BTR 70,000
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    N914 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RESISTOR NETWORK SMD 8 PIN array isolated 2512

    Abstract: 88em8011 MILMAX MACHINE marking code EA SMD MOSFET MOSFET marking smd NU Zener diode smd marking code nu prestera package marking semiconductor smd marking codes diode SMD MARKING CODE 606
    Text: Cover 88EM8011 Power Factor Correction Controller Datasheet Patents, Patents Pending Including US Pat. Nos. 7,266,001 and 7,292,013 Doc. No. MV-S104861-00, Rev. November 28, 2007 Marvell. Moving Forward Faster Document Classification: Proprietary 88EM8011


    Original
    PDF 88EM8011 MV-S104861-00, 88EM8011 MV-S104861-00 RESISTOR NETWORK SMD 8 PIN array isolated 2512 MILMAX MACHINE marking code EA SMD MOSFET MOSFET marking smd NU Zener diode smd marking code nu prestera package marking semiconductor smd marking codes diode SMD MARKING CODE 606

    Untitled

    Abstract: No abstract text available
    Text: 3QE D • ?12*ï237 00310^3 fi ■ T - ^ S 'O ^ SGS-THOMSON a n S G [M D m m ig ïïM D O Û S 2 N914 S-TH0MS0N SATURATED LOGIC SWITCH AND VHF AMPLIFIER DESCRIPTION The N914 is a silicon planar epitaxial NPN transis­ tor in Jedec TO-18 metal case. It is primarily a uni­


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    PDF 2N914 2N914

    DN914

    Abstract: No abstract text available
    Text: 1.4-inch 36 mm 5 x 8 Dot Matrix LED Display D-N914, D-K914, DEGK914 and DEGN/K9141 Series wdea The 1.4-inch 5 x 8 dot matrix is designed for applications where multiple rows of alphanumeric information must be displayed. It can also be arranged in 16-row groups for displaying Chinese characters and in larger formats for graphics.


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    PDF D-N914, D-K914, DEGK914 DEGN/K9141 16-row DEN914 DEK914 DXN914 DXK914 DGN914 DN914

    1N414 diode

    Abstract: 1N414 1N4148.1N4448 J 1N4448 equivalent
    Text: 1N4148.1N4448 VISHAY _ ▼ Vishay Telefunken Silicon Epitaxial Planar Diodes Features • Electrically equivalent diodes: 1N414 8 - 1 N914 1 N 44 48- N914B Applications Extreme fast switches Absolute Maximum Ratings T¡ = 25°C Parameter


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    PDF 1N4148 1N4448 1N414 1N914B 01-Apr-99 1N414 diode 1N4148.1N4448 J 1N4448 equivalent

    Diodes 1n 4148

    Abstract: No abstract text available
    Text: VfSMAY _ 1N4148.1N4448 ▼ Vishay Telefunken Silicon Epitaxial Planar Diodes Features • Electrically equivalent diodes: 1N 4148 - 1 N 914 1N4448 - 1 N914B Applications 94 9367 Extrem e fa st sw itches Absolute Maximum Ratings Tj = 2 5 °C


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    PDF 1N4148 1N4448 1N4448 N914B D-74025 01-Apr-99 Diodes 1n 4148

    1N91 diode

    Abstract: 1N91 N914A 1N914 1N914A 1N914B SC-40 1N914b diode 13A1A
    Text: TOSHIBA {DISCRET E/ OPT O} b7 9097250 T O S H IBA DISCRETE/OPTO N914,1 N914A, N914B De I ^ O T O S D . ^ OODTSflS 7 D T-o^-o . 67C 09285 S ilico n E p it a x ia l- P la n a r T y p e D iode TENTATIVE Unit in mm COMMUNICATION AND INDUSTRIAL APPLICATIONS.


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    PDF 1N914B 200ent SC-40 1N914 1N914A 1N914B 100mA 1N91 diode 1N91 N914A SC-40 1N914b diode 13A1A

    RTM 866 - 480

    Abstract: SAK 110 TAA775G ITT TCA 700 Y SAJ 220 SG 2368 ITT 90 38 TCA 700 Y SAJ110 TCA 430 taa790
    Text: Halbleiter­ bauelemente 1972/73 INTERMETALL H albleiterwerk der Deutsche ITT Industries GmbH ITT Alphabetisches Typenverzeichnis Typ S eite Typ S eite Typ Seite 1 N 914 42 2 N 3055 38 BB 121 1 N914A 1 N914B 1 N 3604 42 42 42 2 N 3962 33 BB 122 2 N 3963 2 N 3964


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    PDF N914A N914B RTM 866 - 480 SAK 110 TAA775G ITT TCA 700 Y SAJ 220 SG 2368 ITT 90 38 TCA 700 Y SAJ110 TCA 430 taa790

    Untitled

    Abstract: No abstract text available
    Text: CAT28C17A 16K-Bit CMOS E2PROM FEATURES Fast Read Access Times: 200 ns End of Write Detection: -D A T A Polling -R D Y /B D S Y Pin Low Power CMOS Dissipation: -A ctive: 25 mA Max. -S tan d b y: 100 jiA Max. Hardware Write Protection Simple Write Operation:


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    PDF CAT28C17A 16K-Bit CAT28C17A CAT28C17A. 28C17A CAT28C17ANI-20TE7

    Untitled

    Abstract: No abstract text available
    Text: CAT28F102 L icen sed In tel second source 1 Megabit CMOS Flash Memory FEATURES • Fast Read Access Time: 55/70/90/100/120 ns ■ 64K x 16 Word Organization ■ Low Power CMOS Dissipation: -Active: 30 mA max CMOS/TTL levels -Standby: 1 mA max (TTL levels)


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    PDF CAT28F102 -40-pin -44-pin 28F102A 125oC CAT28F102NI-90TE7

    Untitled

    Abstract: No abstract text available
    Text: B ' i c i L _ Y s ~ r Preliminary CAT28F001 L icen sed In tel second source 1 Megabit CMOS Boot Block Flash Memory FEATURES • Deep Powerdown Mode — 0.05 |xA lcc Typical — 0.8 jiA lpp Typical ■ Hardware Data Protection ■ Electronic Signature ■ 100,000 Program/Erase Cycles and 10 Year


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    PDF CAT28F001 24-40-LEAD M0-015

    R4R7

    Abstract: LM148D
    Text: F A IR C H IL D s e m ic o n d u c t o r w w w .fa irc h ild s e m i.c o m tm LM148 L o w P o w e r Q u a d 741 O p e r a t i o n a l A m p l i f i e r Features Description • • • • • • • • • • The LM148 is a true quad 741. It consists of four


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    PDF LM148 LM124 LM148 R4R7 LM148D

    Untitled

    Abstract: No abstract text available
    Text: C A T 28 C 17A 16K-Bit CMOS PARALLEL E2PROM FEATURES • Fast Read Access Tim es: 200 ns ■ ■ Low Power CMOS Dissipation: -A c tiv e : 25 mA Max. -S ta n d b y: 100 jiA Max. End o f Write Detection: -D A T A 'P olling -R D Y /B S T Pin ■ Hardware Write Protection


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    PDF 16K-Bit CAT28C17A 24-40-LEAD

    Untitled

    Abstract: No abstract text available
    Text: SGS-TtiOMSON MK50H28 • U K ê T IM M Ê i MULTI LOGICAL LINK FRAME RELAY CONTROLLER SECTION 1 - FEATURES ■ Based on ITU Q.933 Annex A and T1.617 An­ nex D Standards for Frame Relay Service and Additional Pocedures for Permanent Virtual Circuits PVCs .


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    PDF MK50H28 nT1/T391, nT2/T392, nN1/N391, nN2/N392, nN3/N393 cPLCC52

    CAT28C16A

    Abstract: 28C16A CAT28C16ANI-20T MS-013
    Text: C AT28C 16A 16K-Bit CMOS PARALLEL E2PROM FEATURES • Fast Read Access Times: 200 ns ■ End of Write Detection: DATA Polling ■ Low Power CMOS Dissipation: -A c tiv e : 25 mA Max. -S ta n d b y: 100 fiA Max. ■ Hardware Write Protection ■ CMOS and TTL Compatible I/O


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    PDF CAT28C16A 16K-Bit CAT28C16A 24-40-LEAD M0-015 DDD34D3 28C16A CAT28C16ANI-20T MS-013

    A15C

    Abstract: CAT28F001
    Text: 'Bi ci L_Y s ~r Preliminary CAT28F001 L icen sed In tel second source 1 Megabit CMOS Boot Block Flash Memory FEATURES • Deep Powerdown Mode — 0.05 |xA lcc Typical — 0.8 jiA lpp Typical ■ Hardware Data Protection ■ Electronic Signature ■ 100,000 Program/Erase Cycles and 10 Year


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    PDF CAT28F001 24-40-LEAD M0-015 DDD34D3 A15C CAT28F001

    28C17A

    Abstract: CAT28C17A CAT28C17ANI-20T
    Text: CAT28C 17A 16K-Bit CMOS PARALLEL E2PROM FEATURES • Fast Read Access Times: 200 ns ■ End of Write Detection: -D A TA'Polling -R D Y /B S T Pin ■ Low Power CMOS Dissipation: -Active: 25 mA Max. -Standby: 100 jiA Max. ■ Hardware Write Protection ■ Simple Write Operation:


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    PDF CAT28C17A 16K-Bit 24-40-LEAD M0-015 28C17A CAT28C17ANI-20T

    diode t 4148

    Abstract: TI 4148 FDLL916B 914/A/B FDLL4448 FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A
    Text: 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Discrete POWER & Signal Technologies National Semiconductor" 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 COLOR BAND MARKING DEVICE F D L L 91 4 F D LL914A FD LL914B F D L L 91 6 F D LL916A FD LL916B FD LL4148 FD LL4448 1ST BAND


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    PDF 914/A/B 916/A/B FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A FDLL916B FDLL4148 FDLL4448 diode t 4148 TI 4148

    NE5018

    Abstract: SE5018 8085 philips 5019N
    Text: TSt-09-09 Philips Sem iconductors-Signeties Linear Products 8-Bit |xp-compatible D/A converter NE/SE5018/5019 5DE D NAPC/ SIGNETICS oobvoos q m s i c i PIN CONFIGURATIONS DESCRIPTION FEATURES The NE/SE5018/19 is a complete 8-bit digital-to-anaiog converter subsystem on one


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    PDF T-Si-09-OS NE/SE5018/5019 NE/SE5018/19 SJ-09-Ã NE/SE5018/5019 NE5018 SE5018 8085 philips 5019N

    Untitled

    Abstract: No abstract text available
    Text: N914 THRU FORWARD INTERNATIONAL ELECTRONICS LTD. SEM ICO N D U CTO R 4^ 43 TECHNICAL DATA_ TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES VOLTAGE RANGE -50 to 100 Volts CURRENT - 0.075 to 0.2 Ampere FEATURES ' ‘ *


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    PDF 1N914 IL-STD-202E, N4148MJ 1N4148\ 11N914 1N4454 1N4148

    LFTP

    Abstract: NE5018 ref500
    Text: Philips Sem lconductors-Signetics Linear Products Product specification 8-Bit ¡ip-eompatible D/A converter NE/SE5018/5019 PIN CONFIGURATIONS DESCRIPTION FEATURES The N E /S E 5018/19isacom plete 8-bit digital-to-analog converter subsystem on one monolithic chip. The data inputs have input


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    PDF NE/SE5018/5019 5018/19isacom 47jiF JN814I LFTP NE5018 ref500

    Untitled

    Abstract: No abstract text available
    Text: ÌCM7170 HARRIS S E M I C O N D U C T O R |iP-Compatible, Real-Time Clock A pril 1997 Features Description • 8-Bit, |^P Bus Com patible T he IC M 7170 real tim e clo ck is a m icro p ro ce sso r bus com p atib le peripheral, fab ricated using H a rris’ silicon gate


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    PDF CM7170 N914-type ICM7170

    Untitled

    Abstract: No abstract text available
    Text: Æ 7 SCS-THOMSON ^ 7 # M28F201 [iD ê œ iL K g ^ O iQ ig i CMOS 2 Megabit 256K x 8 FLASH MEMORY ADVANCE DATA • FAST ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION - Standby Current: 100p.A Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE


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    PDF M28F201 100ns M28F201 PDIP32 PLCC32 PTS032

    1N914

    Abstract: N914A N914B 1N914B 1N914-1
    Text: N914 / N914A / N914B FAST SWITCHING DIODE Features Fast Switching Speed High Reliability High Conductance For General Purpose Switching Applications T D Mechanical Data_ • • • • DO-35 Case: D O -35, Glass Terminals: Solderable per M IL-STD-202,


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    PDF 1N914 1N914A 1N914B IL-STD-202, DO-35 Current10mA DS22001 N914A N914B N914B 1N914B 1N914-1

    N4003

    Abstract: BELLCORE FSK ZF steering GR-30-CORE MT88E43B MT88E43BE MT88E43BS SIN227 1N40032 tda 2222
    Text: SEMICONDUCTOR CMOS MT88E43B Extended Voltage Calling Number Preliminary Information Identification Circuit 2 Features D S 5 1 5 7 _ IS S U E 1_ A p ril 1 9 9 9 • Ordering Information MT88E43BE 24 Pin Plastic DIP


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    PDF MT88E43B SIN227 SIN242 E/312 GR-30-CORE TR-NWT-000030) SR-TSV-002476 -40dBV MT88E43B N4003 BELLCORE FSK ZF steering GR-30-CORE MT88E43BE MT88E43BS SIN227 1N40032 tda 2222