RS468
Abstract: transistor dg sot-23 BENT LEAD transistor TO-92 Outline Dimensions P005 n7 transistor P012 B W4 Transistor GP007 transistor W4 sot-23
Text: Package Options TO-39 N2, B TO-52 (N9) TO-92 (N3, L, LL) DIP Plastic (N4, N6, NA, J, P) DIP Ceramic (NC, N7, P, C) Side Braze (NC, N7) TO-220 (N5) 7-Pin TO-220 (K2) TO-243 AA (SOT-89) (N8) SOT-23 (K1) TO-3 (N1) Die in Wafer Form (NW, XW) Die on adhesive
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O-220
O-243
OT-89)
OT-23
RS468
transistor dg sot-23
BENT LEAD transistor TO-92 Outline Dimensions
P005
n7 transistor
P012
B W4 Transistor
GP007
transistor W4 sot-23
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brake rectifier motor
Abstract: dc chopper circuit ANS5 diode x18
Text: Advanced Technical Information VRRM = 1200/1600 V IdAVM = 56 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System in ECO-PAC 2 VRRM V16 Type V A4 D D1 1200 1600 VUB 50-12 PO1 VUB 50-16 PO1 K1 D1 G1 D3 D5 N7 T D2 D4 D6 X18 L9
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brake rectifier motor
Abstract: DIODE N7
Text: Advanced Technical Information VRRM = 1200/1600 V IdAVM = 56 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System in ECO-PAC 2 VRRM V16 Type V VUB 50 A4 D D1 VUB 50-12 PO1 VUB 50-16 PO1 K1 D1 G1 D5 N7 T D2 D4 D6 X18 L9 R9 Features
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PSDI 50
Abstract: Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode
Text: ECO-PAC TM 2 Three Phase Rectifier Bridge PSDI 50/12 VRRM IdAVM with IGBT and Fast Recovery Diode for Braking System in ECO-PACTM 2 = 1200 V = 56 A Preliminary Data Sheet V16 K1 ~ D1 ~ G1 ~ D1 D3 D5 A4 N7 D1 T L9 D2 D4 D6 X18 R9 Input Rectifier D1 – D6 Symbol
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n7 transistor
Abstract: marking n5 amplifier N6 Amplifier marking n6 transistor amplifier marking code n6 transistor N6 marking N7 2SC1654 sot-23 Marking N5 Marking N5
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z 2SC1654 Pb High DC current gain:hFE=130 Typ Lead-free (VCE=3V,IC=15mA) z High voltage. APPLICATIONS z Audio frequency general purpose amplifier applications. SOT-23
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2SC1654
OT-23
BL/SSSTC096
n7 transistor
marking n5 amplifier
N6 Amplifier
marking n6 transistor
amplifier marking code n6
transistor N6
marking N7
2SC1654
sot-23 Marking N5
Marking N5
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SC1654 TRANSISTOR NPN SOT–23 FEATURES High Frequency Power Amplifier Application Power Swithing Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-23
2SC1654
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Untitled
Abstract: No abstract text available
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z 2SC1654 Pb High DC current gain:hFE=130 Typ Lead-free (VCE=3V,IC=15mA) z High voltage. APPLICATIONS z Audio frequency general purpose amplifier applications. SOT-23
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2SC1654
OT-23
BL/SSSTC096
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n7 transistor
Abstract: LDTC113ZET1G SC-89 N7110
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTC113ZET1G Applications Inverter, Interface, Driver • Features 1 Built-in bias resistors enable the configuration of an
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LDTC113ZET1G
SC-89
463C-01
463C-02.
n7 transistor
LDTC113ZET1G
SC-89
N7110
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LDTC113ZET1G
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTC113ZET1G S-LDTC113ZET1G • Applications Inverter, Interface, Driver • Features 1 Built-in bias resistors enable the configuration of an
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LDTC113ZET1G
S-LDTC113ZET1G
SC-89
463C-01
463C-02.
LDTC113ZET1G
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n7 transistor
Abstract: sot 323 marking code n7 marking N7 LDTC113ZWT1G sot323 marking n7
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTC113ZWT1G Applications Inverter, Interface, Driver 3 • Features 1 Built-in bias resistors enable the configuration of an
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LDTC113ZWT1G
n7 transistor
sot 323 marking code n7
marking N7
LDTC113ZWT1G
sot323 marking n7
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SOT23 W1P
Abstract: MARKING W1P transistor w1P MARKING W2 SOT23 marking code R2 sot23 marking code w2 sot23 marking code W1p marking code P2p SOT23 marking W1 sot23 marking code w2 sot323
Text: DISCRETE SEMICONDUCTORS Marking codes RF Wideband Transistors Supersedes data of 1997 Nov 21 1999 Jul 21 Philips Semiconductors RF Wideband Transistors Marking codes TYPE NUMBER TO PACKAGE AND MARKING CODE TYPE NUMBER PACKAGE BF547 BF547W BF747 BFC505 SOT23
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BF547
BF547W
BF747
BFC505
OT323
OT353
OT143
SOT23 W1P
MARKING W1P
transistor w1P
MARKING W2 SOT23
marking code R2 sot23
marking code w2 sot23
marking code W1p
marking code P2p SOT23
marking W1 sot23
marking code w2 sot323
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2SC4849
Abstract: No abstract text available
Text: h7 /'Transistors 2SC4849 2SC4849 1 1°$ * y 7 & 7V - 1M NPN v >J n > N7 > y 2 S Epitaxial Planar NPN Silicon Transistor X < y -?•> “i? b =£' a lx — £ /Switching Regulator • ^ j i / D i m e n s i o n s U n it: mm tf= 0 .1 8 (Typ.) ( lc = 5 A )
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2SC4849
2SC4849
100ms)
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2sa154
Abstract: 251C 2SA1547 2SA937M 2SC2021M 2SC401
Text: ROHM CO L T D T a s a ^ MGE D . 4 HIRHM 2SA937M/2SA1547 ^ 7, $ / T r a n s is t o r s N7 Q0 GS M27 ' 7 ^ 2 7 - 0 9 2 S A 1 5 4 7 ~ ^ / N f ^ ii,fiffl/General Smal1 S|9na| AmpEpitaxial Planar PNP Silicon Transistors •¿l-Jfi'tf& SI/D lm e n sio n s U n it:m
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0D0S427
2SA937M/2SA1547
27-Oc)
100mA,
300mW
2SC2021M/2SC40101
-100mA.
300mW.
2SC2021M,
2SC401Ã
2sa154
251C
2SA1547
2SA937M
2SC2021M
2SC401
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Untitled
Abstract: No abstract text available
Text: ROHM CO L T D N7 " 4QE D • □□□SbSb /Transistors — '“ 2SB1334 “ ¿ g T ■RHM — — — 7^ 5 3 - / 9 î £ ° $ * y 7 J l ' 7 ° U - t & P N P y lJ 3 > b ÿ > y Z $ Mffl'tâWJjtmtymM/Low Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor
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2SB1334
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2SD1763
Abstract: 2Sb1186 2SD1763 transistor
Text: 7-, £ / T ransistors h -7 > v 2SD1763 m X t° $ * V 7 U NPN y >J□ > N7 > y 7 $ Epitaxial Planar NPN Silicon Transistor flU§>JfcS^^1iffl/LowFreq. Power Amp. 2SD1763 • • w* 1 rfjiE l/D im e n s io n s U n it: mm) ¡IitH T St>-S o B V ce o= 120 V <M i tO. I
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2SD1763
2SB1186
O-220FP
SC-67
Para60
2SD1763
2SD1763 transistor
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xi 1507
Abstract: Transistor 1507 tA 1507
Text: TOSHIBA RN1507-RN1509 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RMi>;n7 R N i ç n a r m i s h q • * ■ v ■ M r ’*wr m g u « ■ m m m t g ■ « ■ v ■ v <*MT MT Unit in mm • • • • • Including Two Devices in SMV (Super Mini Type with 5 leads)
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RN1507-RN1509
RN2507-
RN1907
RN1908
RN1909
RN1508
RN1507
xi 1507
Transistor 1507
tA 1507
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Untitled
Abstract: No abstract text available
Text: ROHM CO LT D 40E D B T ô a û T ïT 0D0Sfc.03 K ÿ > y X £ /Transistors 1 BIR HM 2SB1291 7 -3 3 -/7 1 1 ° £ * V 7 ^ 7 ° U - * pNP y 'J □ > N7 > y * ^ '®:üM®^JiHllIlÆ /L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor 2 • ÿ fffÎ^ jÈ lS /D im e n sio n s Unit: mm
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2SB1291
2SD1720
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Untitled
Abstract: No abstract text available
Text: ROHM CO LTD N7 > V 4DE D 000SA04 8 E3RHM $ / T ransistors 2SC3969 7 - 2 1 . - 0 ¡3 S H M i £ i & 7 ° U - ^ N y 3-> P N y ' j 3 > h 7 > y 7 J $ raiSiJE^ < “^ ffl/High Voltage Switching Triple Diffused Planar NPN Silicon Transistor • W fi\f';i|3 ]/'D in ie n s io n s U n it: mm
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000SA04
2SC3969
50/iS
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lg washing machine control circuit
Abstract: gp1uv701
Text: SHARP IR0 5 4 0 1 SPEC No. y ^ =2 5/ h g p 1 u v 7 0 q s 0 0 f -> y - x tfc ttlf Infrared Detecting unit for Remote'"Çôntroi QPllÌV70QS00F Series Specifications $n7 y “ pp Lead —Free Type * -?• #15 nBn * ^ * 7° h 7 s/< 4 ^ f I I 2 g ff * S ii §15
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V70QS00F
GP1UV70QS00F
10Opcs.
400pcs/packing
lg washing machine control circuit
gp1uv701
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d1758
Abstract: No abstract text available
Text: ROHM CO L T » N7 > vT , L<0E D $/J ransistors P 5 Freq. Power Amp. Epitaxial Planar NPN Silicon Transistors W ë ’tfiâ lll/ D im e n s io n s Unit : mm « f t 1) V ce o = 3 2 V, Ic m a x = 2 A, P c m a x= 1 O W O iH J f l £ 2) 2S B 1 1 8 2 i : a V j V v J iT
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2SD1758/2SD1758F5
2SB1182.
D1758/
D1758F
d1758
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2SC3080M
Abstract: 2SC4014
Text: ROHM CO MQE LTD /'Transistors 2 S C 3 g 2 S C 4 1 4 m D 7 0 2 0 ^ 000S751 2 HRHM 2SC3080M/2SC4014 7^31-17 x tf 2 * y 7 ; u 7° u —1-m N P N V U H > N7 > y ^ £ iS J is f t iiiif f l / R F Amplifier Epitaxial Planar NPN Silicon Transistors • ÿf-jfé’t f & H / D im e n s io n s Unit : mm
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2SC30I
2SC4014
000S7S1
2SC3080M/2SC4014
2SC3080M
00057S3
T-37-77
2SC3080M
2SC4014
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MP4207 TOSHIBA PO W ER MOS FET MODULE SILICON N & P CHANNEL MOS TYPE L2-tt-MOS1V 4 IN 1 MP a n7 i IN D U S T R IA L A P P L IC A T IO N S U n it in mm O HIGH POW ER HIGH SPEED SWITCHING APPLICATIONS. O H - SWITCH DRIVER • 4-V o lt G ate D rive.
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MP4207
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N1702
Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922
Text: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961
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2N34A
2N43A
2N44A
2N59A
2N59B
2N59C
2N60A
2N60B
2N60C
2N61A
N1702
2N277
2SA63
2N390A
L204A
2N408
TFK 940
OC59
2N374
2n1922
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SOT23 W1P
Abstract: BFG540 N43 SOT89 MARKING CODE "W1P" MARKING W1P sot143 Marking code p1 PSH10 sot143 sot343 marking code V3 w1p code
Text: Philips Semiconductors RF Wideband Transistors Marking codes TYPE NUMBER TO PACKAGE AND MARKING CODE TYPE NUMBER PACKAGE BF547 SOT23 BF547W BF689K SOT323 SOT54 BF747 SOT23 SOT54 BF763 BFC505 BFC520 BFE505 BFE520 BFG10 BFG10/X BFG10W/X BFG11 BFG11/X BFG11W/X
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BF547
BF547W
BF689K
BF747
BF763
BFC505
BFC520
BFE505
BFE520
BFG10
SOT23 W1P
BFG540 N43
SOT89 MARKING CODE
"W1P"
MARKING W1P
sot143 Marking code p1
PSH10
sot143 sot343
marking code V3
w1p code
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