DRCF143E
Abstract: No abstract text available
Text: DRCF143E Tentative Total pages page DRCF143E Silicon NPN epitaxial planar type For digital circuits Marking Symbol : N5 Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)
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DRCF143E
DRCF143E
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Untitled
Abstract: No abstract text available
Text: DDTC114ELP PRE-BIASED R1 = R2 SMALL SIGNAL SURFACE MOUNT 100mA NPN TRANSISTOR Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction Ultra-Small Leadless Surface Mount Package Ideally Suited for Automated Assembly Processes
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DDTC114ELP
100mA
AEC-Q101
DDTC114ELP
DFN1006-3
J-STD-020
MIL-STD-202,
DS30945
621-DDTC114ELP-7
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Untitled
Abstract: No abstract text available
Text: DDTC114ELP PRE-BIASED R1 = R2 SMALL SIGNAL SURFACE MOUNT 100mA NPN TRANSISTOR Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction Ultra-Small Leadless Surface Mount Package Ideally Suited for Automated Assembly Processes
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DDTC114ELP
100mA
AEC-Q101
DFN1006-3
J-STD-020
MIL-STD-202,
DS30945
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Untitled
Abstract: No abstract text available
Text: NSM46211DW6T1G Dual NPN Transistors General Purpose NPN Transistor and NPN Transistor with Monolithic Bias Network NSM46211DW6T1G contains a single NPN transistor with a single NPN bias resistor transistor with a monolithic bias network; a series base resistor and a base-emitter resistor. This device is designed to
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NSM46211DW6T1G
NSM46211DW6T1G
SC-88/SOT-363
NSM46211DW6/D
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N5 npn transistor
Abstract: N5 transistor SC-88 419B-02 NSM46211DW6T1G NSM46211DW6
Text: NSM46211DW6T1G Dual NPN Transistors General Purpose NPN Transistor and NPN Transistor with Monolithic Bias Network NSM46211DW6T1G contains a single NPN transistor with a single NPN bias resistor transistor with a monolithic bias network; a series base resistor and a base-emitter resistor. This device is designed to
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NSM46211DW6T1G
NSM46211DW6T1G
SC-88/SOT-363
NSM46211DW6/D
N5 npn transistor
N5 transistor SC-88
419B-02
NSM46211DW6
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marking CODE n5
Abstract: 035nm ipc-SM-782 DDTC114ELP DDTC114ELP-7 DFN1006-3
Text: DDTC114ELP PRE-BIASED R1 = R2 SMALL SIGNALSURFACE MOUNT 100mA NPN TRANSISTOR NEW PRODUCT Features • • • • • Epitaxial Planar Die Construction Ultra-Small Leadless Surface Mount Package Ideally Suited for Automated Assembly Processes Lead Free By Design/RoHS Compliant (Note 1)
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DDTC114ELP
100mA
DFN1006-3
J-STD-020C
MIL-STD-202,
DS30945
marking CODE n5
035nm
ipc-SM-782
DDTC114ELP
DDTC114ELP-7
DFN1006-3
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SC1654 TRANSISTOR NPN SOT–23 FEATURES High Frequency Power Amplifier Application Power Swithing Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-23
2SC1654
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marking CODE n5
Abstract: DDTC114ELP DDTC114ELP-7 DFN1006-3 J-STD-020D
Text: DDTC114ELP PRE-BIASED R1 = R2 SMALL SIGNAL SURFACE MOUNT 100mA NPN TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • Epitaxial Planar Die Construction Ultra-Small Leadless Surface Mount Package
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DDTC114ELP
100mA
AEC-Q101
DFN1006-3
J-STD-020D
DS30945
marking CODE n5
DDTC114ELP
DDTC114ELP-7
DFN1006-3
J-STD-020D
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Untitled
Abstract: No abstract text available
Text: DDTC114ELP PRE-BIASED R1 = R2 SMALL SIGNAL SURFACE MOUNT 100mA NPN TRANSISTOR NEW PRODUCT Features • • • • • • Epitaxial Planar Die Construction Ultra-Small Leadless Surface Mount Package Ideally Suited for Automated Assembly Processes Lead Free By Design/RoHS Compliant (Note 1)
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DDTC114ELP
100mA
AEC-Q101
DFN1006-3
J-STD-020C
DS30945
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Untitled
Abstract: No abstract text available
Text: DDTC114ELP PRE-BIASED R1 = R2 SMALL SIGNAL SURFACE MOUNT 100mA NPN TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • Epitaxial Planar Die Construction Ultra-Small Leadless Surface Mount Package
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DDTC114ELP
100mA
AEC-Q101
DFN1006-3
J-STD-020C
DS30945
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Untitled
Abstract: No abstract text available
Text: DN500F NPN Silicon Transistor PIN Connection Description • Extremely low collector-to-emitter saturation voltage VCE(SAT =0.2V Typ. @IC/IB=3A/150 ㎃) • Suitable for low voltage large current drivers • Excellent hFE Linearity • Complementary pair with DP500F
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DN500F
A/150
DP500F
OT-89
KSD-T5B002-000
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2SC1654
Abstract: N5 npn transistor n7 transistor 2SC1654N5 marking n5 amplifier sot-23 Marking N5 marking n6 2SC1654N7 amplifier marking code n6 marking n6 transistor
Text: 2SC1654 0.05A , 180V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE High Frequency Power Amplifier Application Power Switching Applications A L 3 3
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2SC1654
OT-23
2SC1654-N5
2SC1654-N6
2SC1654-N7
18-Feb-2011
2SC1654
N5 npn transistor
n7 transistor
2SC1654N5
marking n5 amplifier
sot-23 Marking N5
marking n6
2SC1654N7
amplifier marking code n6
marking n6 transistor
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTC144EET1G Applications Inverter, Interface, Driver • 3 Features 1 Built-in bias resistors enable the configuration of an
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LDTC144EET1G
SC-89
463C-01
463C-02.
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N5 npn transistor
Abstract: Marking N5
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTC144ELT1G zApplications Inverter, Interface, Driver 3 zFeatures 1 Built-in bias resistors enable the configuration of an inverter circuit without connecting external input
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LDTC144ELT1G
OT-23
N5 npn transistor
Marking N5
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sot-23 N9
Abstract: N4 SOT23 MARK N2 SOT-23 Marking N8 sot-23 Marking N2 SOT23 n9 marking N8 sot-23
Text: ࡒᔜྯ Resistive Transistors Resistive Transistors ࡒᔜྯ NPN Silicon FHRC116～FHRC122 DESCRIPTION & FEATURES 概述及特点 With Built-in Bias Resistors 内部基极带阻 Simplify Circuit Design 简单的回路设计 Reduce a Quantity of Parts and Manufacturing Process
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FHRC116FHRC122)
OT-23
OT-23
FHRC116
FHRC117
FHRC118
FHRC119
FHRC120
FHRC121
FHRC122
sot-23 N9
N4 SOT23
MARK N2 SOT-23
Marking N8
sot-23 Marking N2
SOT23 n9
marking N8 sot-23
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N5 npn transistor
Abstract: N5 transistor SC-88 RT3N55M
Text: PRELIMINARY RT3N55M Composite Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3N55M is compound transistor built with two RT1N144 chips in SC-88 package. FEATURE Silicon NPN epitaxial type
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RT3N55M
RT3N55M
RT1N144
SC-88
JEITASC-88
N5 npn transistor
N5 transistor SC-88
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N5 npn transistor
Abstract: marking N5 RF marking CODE n5 marking n5 amplifier marking CODE n5 amplifier n5 amplifier MSC3130T1
Text: LESHAN RADIO COMPANY, LTD. NPN RF Amplifier Transistor Surface Mount MSC3130T1 COLLECTOR 3 3 2 1 2 BASE 1 EMITTER CASE 318D–03, STYLE 1 SC–59 MAXIMUM RATINGS T A = 25 °C Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous
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MSC3130T1
N5 npn transistor
marking N5 RF
marking CODE n5
marking n5 amplifier
marking CODE n5 amplifier
n5 amplifier
MSC3130T1
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EO12
Abstract: 7002 DN500P DP500P 3A SOT223 MARKING CODE
Text: DN500P Semiconductor NPN Silicon Transistor Description • Extremely low collector-to-emitter saturation voltage VC E ( S A T =0.2V Typ. @IC /IB =3A/150mA) • Suitable for low voltage large current drivers • Complementary pair with DP500P • Switching Application
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DN500P
A/150mA)
DP500P
OT-223
KST-7002-002
500mA
150mA
EO12
7002
DN500P
DP500P
3A SOT223 MARKING CODE
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bsc 68e
Abstract: 2N5684 motorola 2N5685 MOTOROLA 2N5686 2N5684 2N5685 3015 hj N5685 J5685 PNP 2N5684
Text: MOTOROLA O rder this docum ent by 2N5684/D SEMICONDUCTOR TECHNICAL DATA PNP 2 N 56 84 High-C urrent Com plem entary Silicon Power Transistors NPN 2 N 56 85 . . . designed for use in high-pow er amplifier and switching circuit applications. • • • 2 N5 6 8 6 *
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2N5684/D
2N5685
2N5684
2N5686
2N5686
97A-05
O-204AE
bsc 68e
2N5684 motorola
2N5685 MOTOROLA
3015 hj
N5685
J5685
PNP 2N5684
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FCX2369
Abstract: FCX2369A
Text: FCX2369A FCX2369 SOT89 NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR FEATU RES T h e se d evice s are suitable for use in h ig h speed, lo w current sw itc h in g applications. P A R T M A R K IN G D E T A IL S - N4 FCX2369A - FCX2369 N5 ABSOLUTE M A X IM U M RATINGS
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FCX2369A
FCX2369
FCX2369
100mA,
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2N5882
Abstract: N5 npn transistor 2N5880 2N5879
Text: MOTOROLA Order this document by 2N5879/D SEMICONDUCTOR TECHNICAL DATA PNP 2 N 58 79 Com plem entary Silicon H igh-Pow er Transistors 2N 5880* NPN . . . designed for general-purpose power amplifier and switching applications. • • • • 2N5881 C ollector-Em itter Sustaining Voltage —
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2N5879/D
2N5879,
2N5881
2N5880,
2N5882
2N5881
O-204AA
N5 npn transistor
2N5880
2N5879
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sot-23 Marking G1
Abstract: marking 1U sot-23 MMBC1653N4 MMBC1654N5 N3 SOT-23 MMBC1653 MMBC1653N2 MMBC1653N3 G1 marking sot23 sot23 MARKING 1l
Text: SURFACE MOUNT PRODUCTS — SOT 23 continued Low-Noise SOT-23 Transistors Pinout: 1-Base, 2-Emitter, 3-C ollector NPN NF dB Device MMBT5088 MMBT5089 MMBT2484 MMBT6428 MMBT6429 fT hfe Max @'C (mA) Min (MHz) Marking (Typ) Vb R(CEO) Min 1Q 1R 1U 1K 1L 1.0 1.0
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OT-23
MMBT5088
MMBT5089
MMBT2484
MMBT6428
MMBT6429
MMBT5087
MMBT5086
MMBTA42
sot-23 Marking G1
marking 1U sot-23
MMBC1653N4
MMBC1654N5
N3 SOT-23
MMBC1653
MMBC1653N2
MMBC1653N3
G1 marking sot23
sot23 MARKING 1l
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2N3930
Abstract: 2N4033
Text: continued >cc <—1 oa . w JJ aLU 1— <a: <3 X to -Ü E < E _o UJ _clL > X CU E A3 UJ o > U_ a. X <o E o n o0 (continued) o0 ID CM II I@ 5 PACKAGE TYPE General purpose amplifiers and switches fT min (MHz) JEDEC TRANSISTORS E a.ü 2N 3251 PNP 40 100/300
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T0-18
2N3930
2N4033
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Untitled
Abstract: No abstract text available
Text: ROHM CO LTD MOE 5 n 7 0 2 0 = ^ 0005^45 T • RHM h*-7 > y Z. $ / I ransistors 2SD1733/2SD1733F5 T-ZZ-07 2SD1 733 0 9 ^ 4 • w i l l NPN y ‘J = l > i S J U j M ^ l f f l / L o w Freq. P ow er Amp. Epitaxial Planar NPN S ilico n Transistors 7 ^ ^ ^ ^ / w ilF S
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2SD1733/2SD1733F5
T-ZZ-07
2SB1181
2SB1181.
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