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    N4 TRANSISTOR Search Results

    N4 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    N4 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DRCF123J

    Abstract: drcf123
    Text: DRCF123J Tentative Total pages page DRCF123J Silicon NPN epitaxial planar type For digital circuits Marking Symbol : N4 Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)


    Original     		PDF DRCF123J DRCF123J drcf123

    DRCF114Y

    Abstract: No abstract text available
    Text: DRCF114Y Tentative Total pages page DRCF114Y Silicon NPN epitaxial planar type For digital circuits Marking Symbol : NC Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)


    Original     		PDF DRCF114Y DRCF114Y

    DRCF143E

    Abstract: No abstract text available
    Text: DRCF143E Tentative Total pages page DRCF143E Silicon NPN epitaxial planar type For digital circuits Marking Symbol : N5 Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)


    Original     		PDF DRCF143E DRCF143E

    DRAF124E

    Abstract: No abstract text available
    Text: DRAF124E Tentative Total pages page DRAF124E Silicon PNP epitaxial planar type For digital circuits Marking Symbol : LE Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)


    Original     		PDF DRAF124E DRAF124E

    DRAF114Y

    Abstract: No abstract text available
    Text: DRAF114Y Tentative Total pages page DRAF114Y Silicon PNP epitaxial planar type For digital circuits Marking Symbol : LC Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)


    Original     		PDF DRAF114Y DRAF114Y

    DRCF144E

    Abstract: No abstract text available
    Text: DRCF144E Tentative Total pages page DRCF144E Silicon NPN epitaxial planar type For digital circuits Marking Symbol : NL Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)


    Original     		PDF DRCF144E DRCF144E

    DSCF001

    Abstract: No abstract text available
    Text: Tentative DSCF001 Total pages page DSCF001 Silicon NPN epitaxial planar type For general amplification Marking Symbol : C1 Package Code : ML3-N4-B Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)


    Original     		PDF DSCF001 DSCF001

    DRCF114W

    Abstract: No abstract text available
    Text: DRCF114W Tentative Total pages page DRCF114W Silicon NPN epitaxial planar type For digital circuits Marking Symbol : N9 Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)


    Original     		PDF DRCF114W DRCF114W

    DRCF113Z

    Abstract: No abstract text available
    Text: DRCF113Z Tentative Total pages page DRCF113Z Silicon NPN epitaxial planar type For digital circuits Marking Symbol : N1 Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)


    Original     		PDF DRCF113Z DRCF113Z

    DSAFG01

    Abstract: No abstract text available
    Text: DSAFG01 Tentative page Total pages DSAFG01 Silicon PNP epitaxial planar type For High-frequency Amplifier Marking Symbol A4 Package Code : ML3-N4-B Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)


    Original     		PDF DSAFG01 DSAFG01

    DRAF143E

    Abstract: No abstract text available
    Text: DRAF143E Tentative Total pages page DRAF143E Silicon PNP epitaxial planar type For digital circuits Marking Symbol : L5 Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)


    Original     		PDF DRAF143E DRAF143E

    DRCF143T

    Abstract: No abstract text available
    Text: DRCF143T Tentative Total pages page DRCF143T Silicon NPN epitaxial planar type For digital circuits Marking Symbol : NA Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)


    Original     		PDF DRCF143T DRCF143T

    DRCF114E

    Abstract: drcf114
    Text: DRCF114E Tentative Total pages page DRCF114E Silicon NPN epitaxial planar type For digital circuits Marking Symbol : NB Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)


    Original     		PDF DRCF114E DRCF114E drcf114

    DRAF143Z

    Abstract: No abstract text available
    Text: DRAF143Z Tentative Total pages page DRAF143Z Silicon PNP epitaxial planar type For digital circuits Marking Symbol : L8 Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)


    Original     		PDF DRAF143Z DRAF143Z

    DRAF123J

    Abstract: draf123
    Text: DRAF123J Tentative Total pages page DRAF123J Silicon PNP epitaxial planar type For digital circuits Marking Symbol : L4 Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)


    Original     		PDF DRAF123J DRAF123J draf123

    DRAF143T

    Abstract: No abstract text available
    Text: DRAF143T Tentative Total pages page DRAF143T Silicon PNP epitaxial planar type For digital circuits Marking Symbol : LA Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)


    Original     		PDF DRAF143T DRAF143T

    DRCF124E

    Abstract: No abstract text available
    Text: DRCF124E Tentative Total pages page DRCF124E Silicon NPN epitaxial planar type For digital circuits Marking Symbol : NE Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)


    Original     		PDF DRCF124E DRCF124E

    DRAF144E

    Abstract: No abstract text available
    Text: DRAF144E Tentative Total pages page DRAF144E Silicon PNP epitaxial planar type For digital circuits Marking Symbol : LL Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)


    Original     		PDF DRAF144E DRAF144E

    DRCF152Z

    Abstract: No abstract text available
    Text: DRCF152Z Tentative Total pages page DRCF152Z Silicon NPN epitaxial planar type For digital circuits Marking Symbol : N0 Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)


    Original     		PDF DRCF152Z DRCF152Z

    V 904 RL 805

    Abstract: BFG520W N4 TAM transistor fp 1016 DIN45004B
    Text: Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFG520W BFG520W/X; BFG520W/XR MARKING • High power gain TYPE NUMBER • Low noise figure BFG520W N3 • High transition frequency BFG520W/X N4 • Gold metallization ensures


    OCR Scan     		PDF BFG520W BFG520W/X; BFG520W/XR OT343 OT343R BFG520W/X BFG520W/XR 7110fli V 904 RL 805 N4 TAM transistor fp 1016 DIN45004B

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC4844 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4844 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. NF = 1.8dB, |S2iel2= 9.5dB f=2GHz 2.1 ± 0.1 1.25 ± 0.1 n4 MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC4844 --J50 -j250

    equivalent transistor TT 3043

    Abstract: transistor TT 3043 transistor BI 342 905 LT312 MRC005 RF NPN POWER TRANSISTOR C 10-12 GHZ k a 431 transistor Transistor BF 479 BFR540 BTS 308
    Text: Philips Semiconductors • 7 1 1 0 fl2 tj □0bT305 7bT B iP H IN Productspecification NPN 9 GHz wideband transistor BFS540 PINNING FEATURES PIN CONFIGURATION DESCRIPTION PIN • High power gain Code: N4 • Low noise figure • High transition frequency 1


    OCR Scan     		PDF 7110fl2tj BFS540 OT323 MBC370 OT323. emitte-176 equivalent transistor TT 3043 transistor TT 3043 transistor BI 342 905 LT312 MRC005 RF NPN POWER TRANSISTOR C 10-12 GHZ k a 431 transistor Transistor BF 479 BFR540 BTS 308

    TLP721

    Abstract: TLP721F 11-5B2 E67349 VDE0884 74285
    Text: TOSHIBA TLP721 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP721 OFFICE MACHINE HOUSEHOLD USE EQUIPMENT SOLID STATE RELAY SWITCHING POWER SUPPLY "n4 n33 The TOSHIBA TLP721 consists of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic


    OCR Scan     		PDF TLP721 TLP721 UL1577 EN60065 EN60950 EN4330784 E67349 E152349 TLP721F 11-5B2 E67349 VDE0884 74285

    iw 1688

    Abstract: 7812 philips 227 1112 2t6 551 BFR540 BFS540 UBC870 TRANSISTOR D 1765 738 transistor BF 697 Transistor MJE 5331
    Text: Philips Semiconductors 0 0 3 2 0 b ti 5^7 • APX Product specification NPN 9 GHz wideband transistor BFS540 N AUER PHILIPS/DISCRETE FEATURES b^E » 1 PIN CONFIGURATION PIN • High power gain DESCRIPTION Code: N4 • Low noise figure • High transition frequency


    OCR Scan     		PDF GG350bfci BFS540 OT323 UBC870 OT323. collect-176 iw 1688 7812 philips 227 1112 2t6 551 BFR540 BFS540 UBC870 TRANSISTOR D 1765 738 transistor BF 697 Transistor MJE 5331