fuse n20
Abstract: n20 fuse 160A Fuse bs88 curve bussmann hrc fuse bs88 200a BS88 fuse curve bs88 160A fuse curve
Text: Bussmann BS88, IEC269 N20 Industrial HRC Fuse Links 660V Special Slotted Tag Arrangement Time-Current Characteristic Curve 125A 160A 200A 250A 315A Dimensional Data Carton Quantities: 1 per carton all ratings Ordering Code: Rating followed by N20 2 Catalog
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IEC269
fuse n20
n20 fuse
160A Fuse bs88 curve
bussmann hrc fuse bs88 200a
BS88 fuse curve
bs88 160A fuse curve
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fuse n20
Abstract: n20 fuse ff3 fuse PWR2 LD800HSE 61158-2
Text: Data Sheet FieldIT TU 900-NR4 Termination Unit Benefits • Termination Unit for Power Conditioners ■ Up to 32 V DC supply voltage ■ Redundant power supply ■ Combined fault output ■ 4 fieldbus segments Function The Termination Unit allows for the fieldbus host, device wiring
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900-NR4
supplyIP20
3BDD011880R101
fuse n20
n20 fuse
ff3 fuse
PWR2
LD800HSE
61158-2
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WT-EL2
Abstract: MIL-STD-275C
Text: a 5-Channel Monolithic Comparator for Lamp Monitoring AD22001* FUNCTIONAL BLOCK DIAGRAM FEATURES Continuous Status Checks of Five Bulbs Lamp Status Check in “ON” and “OFF” States Status Checks of Two In-Line Fuses Very Low Voltage Drop at Sensor Shunt Resistor
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AD22001*
AD22001
MIL-STD-275C,
20-Pin
C1533
WT-EL2
MIL-STD-275C
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fuse n20
Abstract: n20 fuse MIL-STD-275C AD22001 C1533 Resistor Fuse 4.91 AD22001N
Text: a 5-Channel Monolithic Comparator for Lamp Monitoring AD22001* FUNCTIONAL BLOCK DIAGRAM FEATURES Continuous Status Checks of Five Bulbs Lamp Status Check in “ON” and “OFF” States Status Checks of Two In-Line Fuses Very Low Voltage Drop at Sensor Shunt Resistor
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AD22001*
MIL-STD-275C,
AD22001
20-Pin
C1533
fuse n20
n20 fuse
MIL-STD-275C
AD22001
Resistor Fuse 4.91
AD22001N
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fuse n20
Abstract: C1533 AD22001 MIL-STD-275C
Text: BACK a 5-Channel Monolithic Comparator for Lamp Monitoring AD22001* FUNCTIONAL BLOCK DIAGRAM FEATURES Continuous Status Checks of Five Bulbs Lamp Status Check in “ON” and “OFF” States Status Checks of Two In-Line Fuses Very Low Voltage Drop at Sensor Shunt Resistor
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AD22001*
AD22001
MIL-STD-275C,
20-Pin
C1533
fuse n20
AD22001
MIL-STD-275C
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75639G
Abstract: 75639P 75639S HUF75639G3 HUF75639P3 HUF75639S3S HUF75639S3ST TB334
Text: HUF75639G3, HUF75639P3, HUF75639S3S TM Data Sheet August 2000 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs File Number 4477.8 Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology
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HUF75639G3,
HUF75639P3,
HUF75639S3S
75639G
75639P
75639S
HUF75639G3
HUF75639P3
HUF75639S3S
HUF75639S3ST
TB334
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75652G
Abstract: No abstract text available
Text: HUFA75652G3 TM Data Sheet November 2000 File Number 4964 75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET Packaging JEDEC TO-247 SOURCE DRAIN GATE DRAIN TAB HUFA75652G3 Features • Ultra Low On-Resistance - rDS(ON) = 0.008Ω, VGS = 10V • Simulation Models
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HUFA75652G3
O-247
O-247
75652G
HUFA75652G3
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75631S
Abstract: No abstract text available
Text: HUFA75631P3, HUFA75631S3ST TM Data Sheet November 2000 File Number 4958 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN (FLANGE) HUFA75631P3 HUFA75631S3ST
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HUFA75631P3,
HUFA75631S3ST
O-220AB
O-263AB
HUFA75631P3
O-220AB
75631P
75631S
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75852g
Abstract: No abstract text available
Text: HUFA75852G3 TM Data Sheet November 2000 File Number 4969 75A, 150V, 0.016 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-247 Features SOURCE DRAIN GATE • Ultra Low On-Resistance - rDS ON = 0.016Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER
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HUFA75852G3
O-247
75852G
HUFA75852G3
75852g
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75321p
Abstract: No abstract text available
Text: HUFA75321P3, HUFA75321S3S TM Data Sheet 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUFA75321P3,
HUFA75321S3S
75321p
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Untitled
Abstract: No abstract text available
Text: HUFA75829D3, HUFA75829D3S TM Data Sheet November 2000 File Number 4966 18A, 150V, 0.110 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-251AA JEDEC TO-252AA Features DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUFA75829D3S HUFA75829D3
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HUFA75829D3,
HUFA75829D3S
O-251AA
O-252AA
HUFA75829D3
O-252AA
75829D
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Untitled
Abstract: No abstract text available
Text: HUFA75329D3, HUFA75329D3S TM Data Sheet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUFA75329D3,
HUFA75329D3S
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N2357
Abstract: No abstract text available
Text: ISL9N2357D3ST TM Data Sheet October 2000 30V, 0.007 Ohm, 20A, N-Channel DenseTrench Power MOSFET File Number 4929 DenseTrench™ DenseTrench from Intersil is a new advanced MOSFET technology that achieves the lowest possible on-resistance per silicon area while maintaining fast switching and low gate
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ISL9N2357D3ST
5600pF
ISL9N2357D3ST
O-252for
N2357
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IRF530N
Abstract: AN7254 AN7260 AN9321 AN9322 TB334
Text: IRF530N TM Data Sheet March 2000 File Number 4843 22A, 100V, 0.064 Ohm, N-Channel Power MOSFET Packaging Features JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE • Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER
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IRF530N
O-220AB
IRF530N
AN7254
AN7260
AN9321
AN9322
TB334
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HUF75623P3
Abstract: 929E-10 75623P AN7254 AN7260 AN9321 AN9322 TB334
Text: HUF75623P3 Data Sheet November 1999 File Number 4804 22A, 100V, 0.064 Ohm, N-Channel, UltraFET Power MOSFET Packaging Features JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE HUF75623P3 • Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 10V • Simulation Models
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HUF75623P3
O-220AB
75623P
HUF75623P3
929E-10
75623P
AN7254
AN7260
AN9321
AN9322
TB334
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LA 47201
Abstract: 75631P AN7254 AN7260 AN9321 AN9322 HUF75631P3 HUF75631T TB334
Text: HUF75631P3 Data Sheet October 1999 File Number 4720.1 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFET Packaging Features JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE HUF75631P3 • Ultra Low On-Resistance - rDS(ON) = 0.040Ω, VGS = 10V • Simulation Models
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HUF75631P3
O-220AB
75631P
LA 47201
75631P
AN7254
AN7260
AN9321
AN9322
HUF75631P3
HUF75631T
TB334
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75542p
Abstract: No abstract text available
Text: HUFA75542P3, HUFA75542S3S TM Data Sheet November 2000 File Number 4954 75A, 80V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE Features • Ultra Low On-Resistance - rDS ON = 0.014Ω, VGS = 10V GATE
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HUFA75542P3,
HUFA75542S3S
O-220AB
O-263AB
HUFA75542P3
O-220AB
O-263AB
75542P
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Untitled
Abstract: No abstract text available
Text: a 53/63S281/A Advanced Micro Devices High Performance 256x8 PROM TiW PROM Family FEATURES/BENEFITS APPLICATIONS • 28-ns maximum access time • Microprogram control store • Reliable titanium-tungsten fuses TiW guaran tee greater than 98% programming yields
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53/63S281/A
256x8
28-ns
53/63S281/A
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MIL-STD-275C
Abstract: LT1C
Text: 1991 ANALOG ► DEVICES 5-Channel Monolithic Comparator for Lamp Monitoring AD22001* FUNCTIONAL BLOCK DIAGRAM FEATURES Continuous Status Checks of Five Bulbs Lamp Status Check in "ON" and "OFF" States Status Checks of Two In-Line Fuses Very Low Voltage Drop at Sensor Shunt Resistor
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AD22001*
AD22001
AD22001
MIL-STD-275C,
20-Pin
MIL-STD-275C
LT1C
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AD22001
Abstract: AD22001N n20 fuse FUSE n20
Text: 3 1991 ► ANALO G DEVICES 5-Channel Monolithic Comparator for Lamp Monitoring AD22001* FUNCTIONAL BLOCK DIAGRAM FEATURES Continuous Status Checks of Five Bulbs Lamp Status Check in "ON" and "OFF" States Status Checks of Two In-Line Fuses Very Low Voltage Drop at Sensor Shunt Resistor
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AD22001*
AD22001
MIL-STD-275C,
AD22001
20-Pin
AD22001N
n20 fuse
FUSE n20
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LA 47201
Abstract: 75631P AN9321 AN9322 HUF75631P3 TB334
Text: HUF75631P3 interdi Data Sheet O cto b e r 1999 F ile N um ber 4720.1 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFET Packaging Features JEDEC TQ-220AB • Ultra Low On-Resistance - rDS ON = 0.040£2, VGS = 10V SOURCE • Simulation Models - Temperature Compensated PSPICE and SABER®
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HUF75631P3
O-220AB
HUF75631P3
O-220AB
75631P
10ements
43D2271
LA 47201
75631P
AN9321
AN9322
TB334
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HUF75623P3
Abstract: AN9321 AN9322 TB334
Text: HUF75623P3 in terrii N o vem ber 1999 D ata S h eet File N u m b er 4804 22A, 100V, 0.064 Ohm, N-Channel, UltraFET Power MOSFET Packaging Features JEDEC TO-220AB • Ultra Low On-Resistance ‘ SOURCE r DS ON = 0 .0 6 4 i2 , VGS = 1 0 V • Simulation Models
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HUF75623P3
O-220AB
HUF75623P3
O-220AB
75623P
AN9321
AN9322
TB334
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65e9
Abstract: 75637S 75637P 310E3 n72 m HUF75637P3 HUF75637S3S HUF75637S3ST TB334 tci model 510
Text: i n t e f s HUF75637P3, HUF75637S3S i l D a ta S h e e t O c t o b e r 199 9 F ile N u m b e r 472 1.1 44A, 100V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET Packaging Features JED E C TO -220AB JEDEC TO-263AB SOURCE DRAIN FLANGE • Ultra Low On-Resistance
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O-220AB
O-263AB
HUF75637P3
HUF75637S3S
HUF75637P3,
HUF75637P3
O-220AB
75637P
HUF75637S3S
65e9
75637S
75637P
310E3
n72 m
HUF75637S3ST
TB334
tci model 510
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AN7254
Abstract: AN7260 AN9321 AN9322 HUF76413P3 TB334 76413P RVTHRES228 7175-T
Text: HUF76413P3 interrii Data Sheet November 1999 File Num ber 4723.1 22A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features • Ultra Low On-Resistance JEDEC TO-220AB ‘ rDS ON = 0.049i2, VGS = 10V SOURCE ‘ rDS(ON) = 0.056i2, VGS = 5V
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O-220AB
HUF76413P3
HUF76413P3
O-220AB
76413P
HUF76413P3.
AN7254
AN7260
AN9321
AN9322
TB334
76413P
RVTHRES228
7175-T
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