d1711
Abstract: NEC C11531E 2SK1283 C11531E
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1283 SWITCHING N-CHANNEL POWER MOS FET PACKAGE DRAWING Unit: mm DESCRIPTION The 2SK1283 is N-channel MOS Field Effect Transistor designed or solenoid, motor and lamp driver. 8.5 MAX. 3.2 ±0.2 2.8 MAX. FEATURES 12 TYP.
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2SK1283
2SK1283
C11531E)
d1711
NEC C11531E
C11531E
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d1711
Abstract: C11531E 2SK1283 2SK1283,
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1283 SWITCHING N-CHANNEL POWER MOS FET PACKAGE DRAWING Unit: mm DESCRIPTION The 2SK1283 is N-channel MOS Field Effect Transistor designed or solenoid, motor and lamp driver. 8.5 MAX. 3.2 ±0.2 2.8 MAX. FEATURES 12 TYP.
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2SK1283
2SK1283
C11531E)
d1711
C11531E
2SK1283,
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CD4019
Abstract: MC1401 14519B
Text: MC14519B M O T O R O L A CMOS MSI 4-BIT AND/OR SELECTOR or LOW-POWER COMPLEMENTARY MOS QUAD 2-CHANNEL DATA SELECTOR or 4-BIT AND/OR SELECTOR QUAD EXCLUSIVE "NOR" GATE The MC14519B is constructed with MOS P-channel and N-channei en hancement mode devices in a monolithic structure. These complementary
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MC14519B
MC14519B
CD4019
MC1401
14519B
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to92 transistor pinout
Abstract: No abstract text available
Text: Philips Semiconductors Product specification N-channel vertical D-MOS transistor BST74A FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed for use
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BST74A
to92 transistor pinout
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PLA relay
Abstract: No abstract text available
Text: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP126 FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed
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BSP126
OT223
OT223.
PLA relay
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philips bs170
Abstract: No abstract text available
Text: Product specification Philips Semiconductors N-channel vertical D-MOS transistor BS170 FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended fo r
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BS170
ax830
philips bs170
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Untitled
Abstract: No abstract text available
Text: BSS89 ' i _ vv FOR DETAILED INFORMATION! SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope. Designed primarily as
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BSS89
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to92 transistor pinout
Abstract: No abstract text available
Text: BST74A _ yV FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed for use
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BST74A
to92 transistor pinout
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Untitled
Abstract: No abstract text available
Text: BSN254 BSN254A y v- FOR MORE DETAILED INFORMATION SEE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTORS N-channel enhancement mode vertical D-MOS transistors in TO-92 variant envelope and designed for
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BSN254
BSN254A
BSN254)
BSN254A)
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Untitled
Abstract: No abstract text available
Text: BSS89 _ FOR MORE DETAILED INFORMATION SEE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope. Designed prim arily as
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BSS89
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2SK1590
Abstract: No abstract text available
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 MOS FIELD EFFECT TRANSISTOR 2SK1590 N-CHANNEL MOS FET FOR SWITCHING The 2SK1590, N-channel vertical type MOS FET, is a sw itching
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2SK1590
2SK1590,
2SK1590
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2SK1287
Abstract: MEI-1202 TEA-1035
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials._ P1 98.2 N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION
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2SK1287
2SK1287
MEI-1202
TEA-1035
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2SK1290
Abstract: MEI-1202 TEA-1035
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK1290 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
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2SK1290
The2SK1290
2SK1290
MEI-1202
TEA-1035
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification N-channel vertical D-MOS transistor BST76A FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed fo r use
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BST76A
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2SK1501
Abstract: 2SK1501-Z MEI-1202 TEA-1035
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials._ P1 98.2 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1501 is N-channel MOS Field Effect Transistor
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S2SK1501
1501-Z
2SK1501
IEI-1209)
2SK1501-Z
MEI-1202
TEA-1035
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2SK1664
Abstract: MEI-1202 TEA-1035
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 i DATA SHEET N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK1664 SWITCHING N-CHANNEL POWER MOS FET
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2SK1664
2SK1664
IEI-1209)
MEI-1202
TEA-1035
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2SK1285
Abstract: MEI-1202 TEA-1035
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET NEC ^N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK1285 SWITCHING N-CHANNEL POWER MOS FET
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2SK1285
MEI-1202
TEA-1035
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Untitled
Abstract: No abstract text available
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET NEC r N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK1290 SWITCHING N-CHANNEL POWER MOS FET
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2SK1290
2SK1290
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2SK1492
Abstract: MEI-1202 TEA-1035
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials._ P1 98.2 _ DATA SHEET NEC r N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK1492 SWITCHING N-CHANNEL POWER MOS FET
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2SK1492
MEI-1202
TEA-1035
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ta 7769
Abstract: nec 13A 2SK1492 MEI-1202 TEA-1035
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET ,y N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK1492 NEC SWITCHING N-CHANNEL POWER MOS FET
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2SK1492
ta 7769
nec 13A
MEI-1202
TEA-1035
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2sk1132
Abstract: 2SJ165
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 9 8 .2 MOS FIELD EFFECT TRANSISTOR 2SK1132 N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING The 2SK1132, N-channel vertical type MOS FET, is a sw itching
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2SK1132
2SK1132,
2sk1132
2SJ165
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K1494
Abstract: 2SK1493 2SK1494-Z K1493
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET N-CHANNEL MOS FIELD EFFECT POWER TRANSISTORS 2SK1493,2SK1493-Z/2SK1494,2SK1494-Z SWITCHING N-CHANNEL POWER MOS FET
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2SK1493
2SK1493-Z/2SK1494
2SK1494-Z
2SK1495/2SK1496
K1494
2SK1494-Z
K1493
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2SK1289
Abstract: MEI-1202 TEA-1035
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials._ P1 98.2 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK1289 is N-channel MOS Field Effect Transistor
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2SK1289
2SK1289
IEI-1209)
MEI-1202
TEA-1035
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SN254A
Abstract: No abstract text available
Text: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistors BSN254/A FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET N-channel enhancem ent m ode vertical D-MOS transistors in TO -92 variant envelope and designed fo r
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BSN254/A
BSN254)
SN254A
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