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    N-CHANNEL DUAL-GATE GAAS MESFET Search Results

    N-CHANNEL DUAL-GATE GAAS MESFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    N-CHANNEL DUAL-GATE GAAS MESFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    smd transistor marking cf

    Abstract: transistor smd CF F 739 DC cf739 Q62702-F1215 F1215 CF 309 CF MARKING CODE gaas fet marking a MARKING CF
    Text: GaAs FET CF 739 Data Sheet • • N-channel dual-gate GaAs MESFET Depletion mode transistor for tuned small-signal applications up to 2 GHz, e.g. VHF, UHF, Sat-TV tuners • Low noise • High gain • Low input capacitance ESD: Electrostatic discharge sensitive device,


    Original     		PDF OT-143 Q62702-F1215 P-SOT143-4-1 EHT07329 GPS05559 smd transistor marking cf transistor smd CF F 739 DC cf739 Q62702-F1215 F1215 CF 309 CF MARKING CODE gaas fet marking a MARKING CF

    transistor smd cf

    Abstract: CF 309 smd transistor marking cf g1 TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 352 EHT07318
    Text: GaAs FET CF 739 Data Sheet • • N-channel dual-gate GaAs MESFET Depletion mode transistor for tuned small-signal applications up to 2 GHz, e.g. VHF, UHF, Sat-TV tuners • Low noise • High gain • Low input capacitance ESD: Electrostatic discharge sensitive device,


    Original     		PDF Q62702-F1215 OT-143 P-SOT143-4-1 EHT07329 GPS05559 transistor smd cf CF 309 smd transistor marking cf g1 TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 352 EHT07318

    DC bias of FET

    Abstract: Variable resistor 5k AD220-25 AT002S3-12 Alpha 1000 FET
    Text: GaAs FETs as Control Devices -5 V Gallium arsenide MESFETs are being used in RF control device applications as switches and attenuators. They are very easily adapted to monolithic circuit form, dissipate essentially no power and can easily be designed into


    Original     		PDF 3/98A DC bias of FET Variable resistor 5k AD220-25 AT002S3-12 Alpha 1000 FET

    PM2104

    Abstract: BAV99ZXCT PM2105 IRFD9120 BAV99ZXCT-ND IRFD9120 N CHANNEL NDC652PCT BC847C BCW60D BCW61D
    Text: Application Note 2798 Current Regulation and DC Sequencing Circuits for Dual Supply GaAs Power Amplifiers Introduction The purpose of this application note is to address the issue of DC operation for Pacific Monolithics’ dual supply GaAs power amplifiers. The PM2107 is used in this application note as the example. A


    Original     		PDF PM2107 PM2107, AP2798 PM2104 BAV99ZXCT PM2105 IRFD9120 BAV99ZXCT-ND IRFD9120 N CHANNEL NDC652PCT BC847C BCW60D BCW61D

    TQTRX

    Abstract: TQ5M31 TQ3M31 79GHz 121GHz mesfet
    Text: Production Process TQTRx GaAs MESFET Foundry Service Features Metal 2 - 4um Metal 2 • Dielectric Metal 1 • Dielectric Metal 1 - 2um Metal 1 • Dielectric NiCr MIM Metal Metal 0 N+ N+ Isolation Implant N-/P- Channel E,D,G MESFET NiCr Resistor MIM Capacitor


    Original     		PDF

    mesfet datasheet by motorola

    Abstract: AN1580 AN1599 MC33169 MMBD701LT1 MMSF4N01HD MRFIC0913 MRFIC0917 motorola operational amplifier motorola rf spice
    Text: Order this document by AN1599/D AN1599 Power Control with the MRFIC0913 GaAs IPA and MC33169 Support IC Prepared by: Dominique Brunel, Christophe Fourtet, Jacques Trichet, Jean–Baptiste Verdier, Mark Williams Motorola Semiconductor Products Sector INTRODUCTION


    Original     		PDF AN1599/D AN1599 MRFIC0913 MC33169 RFAN1599/D mesfet datasheet by motorola AN1580 AN1599 MMBD701LT1 MMSF4N01HD MRFIC0917 motorola operational amplifier motorola rf spice

    NE25339

    Abstract: NE25339-T1 KDB00 uhf microwave fet
    Text: GENERAL PURPOSE DUAL-GATE GaAs MESFET FEATURES NE25339 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE VGS = 1 V, IDS = 10 mA, f = 900 MHz • SUITABLE FOR USE AS RF AMPLIFIER AND MIXER IN UHF APPLICATIONS • LOW CRSS: 0.02 pF TYP GPS 20 10 • LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 800 µm


    Original     		PDF NE25339 NE253 NE25339-T1 OT-143) 24-Hour NE25339 NE25339-T1 KDB00 uhf microwave fet

    body contact FET soi RF switch

    Abstract: GaAs MMIC ESD, Die Attach and Bonding Guidelines TGA8014-SCC GAAS FET CROSS REFERENCE TGA8021 GAAS FET rf switch CROSS REFERENCE cte table for epoxy adhesive and substrate electric blanket microwave transducer MMIC X-band amplifier
    Text: Gallium Arsenide Products Designers’ Information TriQuint Semiconductor Texas Phone: 972 994-8465 Fax: (972)994-8504 http://www.triquint.com IMPORTANT NOTICE TriQuint Semiconductor (TQS) reserves the right to make changes to or to discontinue any semiconductor product or service identified in this publication without notice. TQS advises


    Original     		PDF

    mesfet datasheet by motorola

    Abstract: high power fet amplifier schematic n channel depletion MOSFET AN1580 AN1599 MC33169 MMBD701LT1 MMSF4N01HD MRFIC0913 MRFIC0917
    Text: Freescale Semiconductor, Inc. Order this document by AN1599/D AN1599 Power Control with the MRFIC0913 GaAs IPA and MC33169 Support IC Prepared by: Dominique Brunel, Christophe Fourtet, Jacques Trichet, Jean–Baptiste Verdier, Mark Williams Motorola Semiconductor Products Sector


    Original     		PDF AN1599/D AN1599 MRFIC0913 MC33169 RFAN1599/D mesfet datasheet by motorola high power fet amplifier schematic n channel depletion MOSFET AN1580 AN1599 MMBD701LT1 MMSF4N01HD MRFIC0917

    transistor marking YD ghz

    Abstract: EHT07317
    Text: Infineon fsclin clog iei GaAs FET CF 739 Data Sheet • N-channel dual-gate GaAs MESFET • Depletion mode transistor for tuned small-signal applications up to 2 GHz, e.g. VHF, UHF, Sat-TV tuners • Low noise • High gain • Low input capacitance ESD: Electrostatic discharge sensitive device,


    OCR Scan     		PDF Q62702-F1215 P-SOT143-4-1 EHT07327 transistor marking YD ghz EHT07317

    MESFET Application

    Abstract: 52s marking MARKING 52S
    Text: HITACHI 3SK239A-GaAs N-Channel Dual Gate MESFET Application C M P A K -4 UHF RF amplifier Features 2 • Excellent low noise characteristics NF = 1.3 dB typ at f = 900 MHz • Capable of low voltage operation 4 1. 2. 3. 4. Source Gatel Gate2


    OCR Scan     		PDF 3SK239A--------------GaAs 3SK239A MESFET Application 52s marking MARKING 52S

    NE25339

    Abstract: No abstract text available
    Text: GENERAL PURPOSE DUAL-GATE GaAs MESFET FEATURES NE25339 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE V gs = 1 V, I ds = 10 mA, f = 900 MHz SUITABLE FOR USE AS RF AMPLIFIER AND MIXER IN UHF APPLICATIONS LOW CRSS: 0.02 pF TYP HIGH GPS: 20 dB (TYP) AT 900 MHz


    OCR Scan     		PDF NE25339 NE253 NE25339

    U78 IC

    Abstract: mesfet fet
    Text: GENERAL PURPOSE DUAL-GATE GaAs MESFET FEATURES NE25339 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE V g s = 1 V, I ds = 10 mA, f = 900 MHz S U IT A B L E F O R U S E A S R F A M P L IF IE R A N D M IX E R IN U H F A P P L IC A T IO N S L O W C R S S : 0.02 pF TYP


    OCR Scan     		PDF NE25339 NE253 OT-143) NE25339 NE25339-T1 NE25339U76 NE25339T1U76 NE25339U77 NE25339T1U77 U78 IC mesfet fet

    Untitled

    Abstract: No abstract text available
    Text: GENERAL PURPOSE DUAL-GATE GaAs MESFET FEATURES NE25339 POW ER GAIN AND NOISE F IG U R E v s. DRAIN TO S O U R C E V O LTA G E V g s = 1 V , Id s = 10 mA, f = 900 MHz SUITABLE FOR USE AS RF AMPLIFIER AND MIXER IN UHF APPLICATIONS LOW CRSS: 0.02 pF TYP HIGH GPS: 20 dB (TYP) AT 900 MHz


    OCR Scan     		PDF NE25339 NE253 1000pF OT-143) NE25339 NE25339-T1 NE25339U76 NE25339T1U76 NE25339U77

    J Fet marking 2 AW

    Abstract: 10E-15
    Text: GENERAL PURPOSE DUAL-GATE GaAs MESFET FEATURES NE25339 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE V gs = 1 V, Ids = 10 mA, f = 900 MHz SUITABLE FOR USE AS RF AMPLIFIER AND MIXER IN UHF APPLICATIONS LOW CRSS: 0.02 pF TYP HIGH GPS: 20 dB (TYP) AT 900 MHz


    OCR Scan     		PDF NE25339 NE253 NE25339 OT-143) NE25339-T1 J Fet marking 2 AW 10E-15

    u-79

    Abstract: NE25339
    Text: GENERAL PURPOSE DUAL-GATE GaAs MESFET FEATURES • • SUITABLE FOR USE AS RF AMPLIFIER AND MIXER IN UHF APPLICATIONS LOW CRSS: 0.02 pF TYP • HIGH GPS: 20 dB (TYP) AT 900 MHz • LOW NF: 1.1 dB TYP AT 900 MHz • Lgi = 1.0 Jim, Lg2 = 1.5 Jim, Wg = 800 Jim


    OCR Scan     		PDF NE25339 NE253 MESF39U79 NE25339T1U79 24-Hour u-79 NE25339

    Untitled

    Abstract: No abstract text available
    Text: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25118 POWER GAIN AND NOISE FIGURE vs. SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER LOW C r s s : 0.02 pF TYP HIGH POWER GAIN: 20 dB (TYP) AT 900 MHz m LOW NF: 1.1 dB TYP AT 900 MHz cn CL CD c 55 e Lgi = 1 .0 jim, Lg2 = 1.5 nm, Wg = 400 |xm


    OCR Scan     		PDF NE25118 NE25118 OT-343 IS11I2 IS12I 1S12S21I OT-343) NE25118-T1

    NE25337

    Abstract: KR sot-143 NE25339 marking X_j sot u79 018
    Text: N E C / NEC L4574m 1SE D CALIFORNIA DGOlbSÔ 5 GENERAL PURPOSE DUAL-GATE GaAs MESFET FEATURES NE25337 NE25339 OUTLINE DIMENSIONS umtsmmm O U T LIN E 37 • SUITABLE FOR USE AS RF AMPLIFIER AND MIXER IN UHF APPLICATIONS • LOW C r s s : 0.02 pF (TYP) • HIGH Gps : 20 dB (TYP)


    OCR Scan     		PDF NE25337 NE25339 NE253 b4E7414 NE25337, Rn/50 KR sot-143 NE25339 marking X_j sot u79 018

    s parameters 4ghz

    Abstract: transistor GaAs FET low noise 4Ghz CCT-C3 MU1520 NE46300 NE46385 4ghz s parameters transistor NE46383 S110 transistor RF MESFET S parameters
    Text: NEC 53C 6 4 2 7 4 1 % N E C/ CA LI F O R NI A N E C / S3 CALIFORNIA 00806 D E | t.4E ?m 4 ODDOflOti fi W~ MICROWAVE TRANSISTOR SERIES NE463 D u a l G a t e G a A s M E S F E T FEATURES DESCRIPTION AND APPLICATIONS • T h e N E 4 6 3 is a dual-gate G a A s F E T designed fo r lo w n oise


    OCR Scan     		PDF NE463 45GHz 12GHz NE463 s parameters 4ghz transistor GaAs FET low noise 4Ghz CCT-C3 MU1520 NE46300 NE46385 4ghz s parameters transistor NE46383 S110 transistor RF MESFET S parameters

    jx 903

    Abstract: No abstract text available
    Text: MwT-5 26 GHz High Gain Dual GateGaAs FET M ic r o w a v e T e c h n o l o g y ►j45p ►J S Op Unit» In im ►jwp • 10.5 dB GAIN IN 6-18 GHz BALANCED CIRCUIT • +14 dBm P1dB IN 6-18 GHz BALANCED CIRCUIT • 0.3 MICRON REFRACTORY METAIVGOLD GATE • DIAMOND-UKE CARBON (DLC PASSIVATION


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MwT-5 26 GHz High Gain Dual GateGaAs FET M ic r o w a v e T e c h n o l o g y ►|45p ►j w p Units in |im 10.5 dB GAIN IN 6-18 GHz BALANCED CIRCUIT +14 dBm P1dB IN 6-18 GHz BALANCED CIRCUIT 0.3 MICRON REFRACTORY METAUGOLD GATE DIAMOND-LIKE CARBON DLC PASSIVATION


    OCR Scan     		PDF appli300

    Untitled

    Abstract: No abstract text available
    Text: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES_ • SU ITA B LE FOR USE AS RF AM PLIFIER IN UH FTUNER • LOW C rss: 0.02 pF TYP • HIGH GPS: 20 dB (TYP) AT 900 MHz • LOW NF: 1.1 dB TYP AT 900 MHz NE25139 POWER GAIN AND NOISE FIGURE vs.


    OCR Scan     		PDF NE25139 NE251 OT-143) NE25139 E25139-T1 NE25139U71 NE25139T1U71 NE25139U72 E25139T1U72 NE25139U73

    Untitled

    Abstract: No abstract text available
    Text: MwT-10 40 GHz Low Noise GaAs FET M ic r o w a v e T e c h n o l o g y M 5.5 dB GAIN IN 18-26.5 GHz BALANCED CIRCUIT 4.5 dB NF IN 18-26.5 GHz BALANCED CIRCUIT 0.3 MICRON REFRACTORY METAL7GOLD GATE DIAMOND-UKE CARBON DLC PASSIVATION APPLICATIONS UP TO 40 GHz


    OCR Scan     		PDF MwT-10 MwT-10 MwT10

    e2513

    Abstract: No abstract text available
    Text: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 P O W ER GA IN A N D N O IS E F IG U R E vs. D R A IN T O S O U R C E V O LT A G E SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER GPS LOW C r s s : 0.02 pF TYP A n m •o HIGH GPS: 20 dB (TYP) AT 900 MHz


    OCR Scan     		PDF NE25139 NE251 E25139-T1 25139U 25139T1U e2513