TPCF8A01
Abstract: No abstract text available
Text: TPCF8A01 TOSHIBA Multi-Chip Device Silicon N Channel MOS Type U-MOS III / Schottky Barrier Diode TPCF8A01 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 38 mÙ (typ.) • High forward transfer admittance: |Yfs| = 5.4 S (typ.)
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TPCF8A01
TPCF8A01
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MOSFET TOSHIBA 2SK
Abstract: transistor 2sk equivalent 2sk2698 mosfet equivalent 2sk2837 mosfet MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR MOSFET TOSHIBA 2Sj TO-3P package land pattern TPCS8201 toshiba lateral mos Transistor TOSHIBA 2SK
Text: [ 3 ] Power MOSFET in Detail [ 3 ] Power MOSFET in Detail [ 3 ] Power MOSFET in Detail 1. Part Number Format transistors and accessories 1.1 Transistors (example) 2SK 2232 A 1st 2nd 3rd 1st group: transistor types are indicated as shown in the table immediately below.
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12L marking
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated PAM2319 DUAL HIGH-EFFICIENCY PWM STEP-DOWN DC-DC CONVERTER Description Pin Assignments The PAM2319 is a dual step-down current-mode, DC-DC converter. At heavy load, the constantf requency PWM control performs excellent stability and transient response. To ensure the longest
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PAM2319
PAM2319
12L marking
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TPCF8A01
Abstract: toshiba Silicon Rectifier Diodes
Text: TPCF8A01 TOSHIBA Multi-Chip Device Silicon N Channel MOS Type U-MOS III / Schottky Barrier Diode TPCF8A01 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) • High forward transfer admittance: |Yfs| = 5.4 S (typ.)
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TPCF8A01
TPCF8A01
toshiba Silicon Rectifier Diodes
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TPCF8A01
Abstract: No abstract text available
Text: TPCF8A01 TOSHIBA Multi-Chip Device Silicon N Channel MOS Type U-MOS III / Schottky Barrier Diode TPCF8A01 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) • High forward transfer admittance: |Yfs| = 5.4 S (typ.)
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TPCF8A01
TPCF8A01
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SMD R5D diode
Abstract: Zener diode smd marking code C24 smd MARKING r5b marking code R38 SMD Transistor smd marking code r55 R5C MARKING CODE SOT23 SMD r2f smd marking R5D SMD code R5D SMD r5d
Text: SMB120 Nine-Channel DC/DC Digitally Programmable System Power Manager FEATURES & APPLICATIONS Preliminary information INTRODUCTION • Digital programming of all major parameters via I2C interface and non-volatile memory o Output voltage set point o Output power-up/down sequencing
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SMB120
SMD R5D diode
Zener diode smd marking code C24
smd MARKING r5b
marking code R38 SMD Transistor
smd marking code r55
R5C MARKING CODE SOT23
SMD r2f
smd marking R5D
SMD code R5D
SMD r5d
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Untitled
Abstract: No abstract text available
Text: SMB120 Nine-Channel DC/DC Digitally Programmable System Power Manager FEATURES & APPLICATIONS Preliminary information INTRODUCTION • Digital programming of all major parameters via I2C interface and non-volatile memory o Output voltage set point o Output power-up/down sequencing
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SMB120
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MCV MOSFET
Abstract: TPCF8A01
Text: TPCF8A01 TOSHIBA Multi-Chip Device Silicon N Channel MOS Type U-MOS III / Schottky Barrier Diode TPCF8A01 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) • High forward transfer admittance: |Yfs| = 5.4 S (typ.)
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TPCF8A01
MCV MOSFET
TPCF8A01
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Untitled
Abstract: No abstract text available
Text: TPCF8A01 TOSHIBA Multi-Chip Device Silicon N Channel MOS Type U-MOS III / Schottky Barrier Diode TPCF8A01 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) • High forward transfer admittance: |Yfs| = 5.4 S (typ.)
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TPCF8A01
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VLF5014ST package
Abstract: LTC3619 LTC3619B LTC3619BE LTC3619BEDD LTC3619BEMSE LTC3619BIDD LTC3619BIMSE ltc3546 layout
Text: LTC3619B 400mA/800mA Synchronous Step-Down DC/DC with Average Input Current Limit DESCRIPTION FEATURES n n n n n n n n n n n n n n Programmable Average Input Current Limit: ±5% Accuracy Dual Step-Down Outputs: Up to 96% Efficiency Low Noise Pulse-Skipping Operation at Light Loads
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LTC3619B
400mA/800mA
25MHz
10-LeaAX)
TSSOP-16E,
DFN-16
MS10E,
DFN-10
VLF5014ST package
LTC3619
LTC3619B
LTC3619BE
LTC3619BEDD
LTC3619BEMSE
LTC3619BIDD
LTC3619BIMSE
ltc3546 layout
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C 3619
Abstract: tps 3619 VLF5014ST package LTC3619 LTC3619B LTC3619E LTC3619EDD LTC3619EMSE LTC3619I LTC3619IDD
Text: LTC3619 400mA/800mA Synchronous Step-Down DC/DC with Average Input Current Limit DESCRIPTION FEATURES n n n n n n n n n n n n n n Programmable Average Input Current Limit: ±5% Accuracy Dual Step-Down Outputs: Up to 96% Efficiency Low Ripple <25mVP-P Burst Mode Operation:
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LTC3619
400mA/800mA
25mVP-P)
25MHz
TSSOP-16E,
DFN-16
MS10E,
DFN-10
C 3619
tps 3619
VLF5014ST package
LTC3619
LTC3619B
LTC3619E
LTC3619EDD
LTC3619EMSE
LTC3619I
LTC3619IDD
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C 3619
Abstract: c822c VLF3010AT2R2-M1R0 FDK*MIPF2520D 3619
Text: LTC3619 400mA/800mA Synchronous Step-Down DC/DC with Average Input Current Limit Description Features Programmable Average Input Current Limit: ±5% Accuracy n Dual Step-Down Outputs: Up to 96% Efficiency n Low Ripple <25mV P-P Burst Mode Operation: IQ = 50µA
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25MHz
10-Lead
LTC3619
400mA/800mA
TSSOP-16E,
DFN-16
MS10E,
DFN-10
C 3619
c822c
VLF3010AT2R2-M1R0
FDK*MIPF2520D
3619
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Untitled
Abstract: No abstract text available
Text: LTC3619 400mA/800mA Synchronous Step-Down DC/DC with Average Input Current Limit DESCRIPTION FEATURES n n n n n n n n n n n n n n Programmable Average Input Current Limit: ±5% Accuracy Dual Step-Down Outputs: Up to 96% Efficiency Low Ripple <25mVP-P Burst Mode Operation:
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LTC3619
400mA/800mA
25mVP-P)
25MHz
TSSOP-16E,
DFN-16
MS10E,
DFN-10
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FDK*MIPF2520D
Abstract: FUSE 160mA LTC312 VLF3010AT-4R7M
Text: Features Programmable Average Input Current Limit: ±5% Accuracy n Dual Step-Down Outputs: Up to 96% Efficiency n Low Noise Pulse-Skipping Operation at Light Loads n Input Voltage Range: 2.5V to 5.5V n Output Voltage Range: 0.6V to 5V n 2.25MHz Constant-Frequency Operation
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25MHz
10-Lead
LTC3619B
400mA/800mA
TSSOP-16E,
DFN-16
MS10E,
DFN-10
FDK*MIPF2520D
FUSE 160mA
LTC312
VLF3010AT-4R7M
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Untitled
Abstract: No abstract text available
Text: LTC3876 Dual DC/DC Controller for DDR Power with Differential VDDQ Sensing and ±50mA VTT Reference DESCRIPTION FEATURES n n n n n n n n n n n n The LTC 3876 is a complete DDR power solution, compatible with DDR1, DDR2, DDR3 and future DDRX lower voltage standards. The LTC3876 includes VDDQ and VTT
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LTC3876
LTC3876
PowLTC3838
QFN-38,
TSSOP-38E
LTC3634
QFN-28,
TSSOP-28E
LTC3617
QFN-24
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DEMO Interleaved boost converter
Abstract: 0009m BSC010NE2LS LTC3876FE
Text: LTC3876 Dual DC/DC Controller for DDR Power with Differential VDDQ Sensing and ±50mA VTT Reference DESCRIPTION FEATURES n n n n n n n n n n n n Complete DDR Power Solution with VTT Reference Wide VIN Range: 4.5V to 38V, VDDQ: 1V to 2.5V ±0.67% VDDQ Output Voltage Accuracy
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LTC3876
200kHz
38-Pin
QFN-20,
TSSOP-20E
LTC3838
QFN-38,
TSSOP-38E
LTC3634
QFN-28,
DEMO Interleaved boost converter
0009m
BSC010NE2LS
LTC3876FE
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35HVP47M
Abstract: protected switches low-dropout linear voltage regulator 3838F RFB21 LTC3833
Text: LTC3838 Dual, Fast, Accurate StepDown DC/DC Controller with Differential Output Sensing DESCRIPTION FEATURES Wide VIN Range: 4.5V to 38V, VOUT: 0.6V to 5.5V n ±0.67% Output Voltage Accuracy Over Temperature, Differential Output Voltage Sensing, Allowing Up to
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LTC3838
500mV
200kHz
LTC3850-2
250kHz
780kHz
LTC3829
770kHz
LTC3853
35HVP47M
protected switches low-dropout linear voltage regulator
3838F
RFB21
LTC3833
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Untitled
Abstract: No abstract text available
Text: LTC3619B 400mA/800mA Synchronous Step-Down DC/DC with Average Input Current Limit DESCRIPTION FEATURES n n n n n n n n n n n n n n Programmable Average Input Current Limit: ±5% Accuracy Dual Step-Down Outputs: Up to 96% Efficiency Low Noise Pulse-Skipping Operation at Light Loads
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LTC3619B
400mA/800mA
25MHz
TSSOP-16E,
DFN-16
MS10E,
DFN-10
QFN-28
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Untitled
Abstract: No abstract text available
Text: LTC3875 Dual, 2-Phase, Synchronous Controller with Low Value DCR Sensing and Temperature Compensation DESCRIPTION FEATURES Dual, 180° Phased Controllers Reduce Required Input Capacitance and Power Supply Induced Noise n Low Value DCR Current Sensing n ±0.5% 0.6V Output Voltage Accuracy
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LTC3875
250kHz
720kHz
Lim856
770kHz
LTC3839
200kHz
3875f
com/LTC3875
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Untitled
Abstract: No abstract text available
Text: T - 3 I- 0 .3 T Silicon N Channel MOSFET Tetrode 32E D • fl23b320 OQLbflL? b BF 996 S I S IP SIEMENS/ SPCL-, SEMICONDS • • • For input stages in UHF TV tuners High transconductance Low noise figure Type Marking Ordering code for versions in bulk BF 996 S
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fl23b320
Q62702-F964
Q62702-F1021
23b320
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FS10UM-5
Abstract: 3DG5 FS10UM5 K775 MAX240 3d fs 45 1.5A 150V power mosfet
Text: MITSUBISHI Neh POWER MOSFET FS10UM-5 HIGH-SPEED SWITCHING USE FS10UM-5 OUTLINE DRAWING Dimensions in mm 0@ © © D © • V d s s . GATE DRAIN SOURCE DRAIN 250V • rDS (ON (MAX) .0 .5 2 Í2
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FS10UM-5
O-220
T0-220S,
MAX240Â
MAX60S
O-220,
O-220FN,
O-220C,
O-220S
FS10UM-5
3DG5
FS10UM5
K775
MAX240
3d fs 45
1.5A 150V power mosfet
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GS 069 LF
Abstract: No abstract text available
Text: PD-9.913A International 3BR Rectifier IRF9Z34S/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF9Z34S • Low-profile through-hole (IRF9Z34L) • 175°C Operating Temperature • Fast Switching • P- Channel • Fully Avalanche Rated
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IRF9Z34S)
IRF9Z34L)
GS 069 LF
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Untitled
Abstract: No abstract text available
Text: P D -9.911 A International IRF9Z14S/L 3BR Rectifier HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF9Z14S • Low-profile through-hole (IRF9Z14L) • 175°C Operating Temperature • Fast Switching • P- Channel • Fully Avalanche Rated
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IRF9Z14S)
IRF9Z14L)
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PHILIPS MOSFET MARKING
Abstract: BF998R UBB087
Text: 00E3tM3 474 • Philips Semiconductors Data sheet status Product specification date of issue O ctob e r 1990 FEATURES • Short channel transistor with high ratio lYfs |/C S. • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor
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00Z3fc
BF998R
OT143R
PHILIPS MOSFET MARKING
UBB087
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