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    N CHANNEL 600V 8A Search Results

    N CHANNEL 600V 8A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation

    N CHANNEL 600V 8A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4a 400V ultra fast diode d2pak

    Abstract: GPL6NC60D STGBL6NC60D STGBL6NC60DT4 STGDL6NC60D STGDL6NC60DT4 STGFL6NC60D STGPL6NC60D GFL6NC60D
    Text: STGBL6NC60D - STGDL6NC60D STGFL6NC60D - STGPL6NC60D N-channel 600V - 6A - DPAK / D2PAK / TO-220 / TO-220FP Hyper fast IGBT Features Type VCES IC @100°C STGBL6NC60D STGDL6NC60D STGPL6NC60D STGFL6NC60D 600V 600V 600V 600V 8A 7A 8A 4A • Very high frequency operation


    Original     		PDF STGBL6NC60D STGDL6NC60D STGFL6NC60D STGPL6NC60D O-220 O-220FP STGBL6NC60D STGFL6NC60D 4a 400V ultra fast diode d2pak GPL6NC60D STGBL6NC60DT4 STGDL6NC60D STGDL6NC60DT4 STGPL6NC60D GFL6NC60D

    gp8nc60

    Abstract: No abstract text available
    Text: STGB8NC60K - STGD8NC60K STGP8NC60K N-channel 600V - 8A - D2PAK / DPAK / TO-220 Short circuit rated PowerMESH IGBT Features Type VCES VCE sat Typ @25°C IC @100°C STGB8NC60K 600V 2.2V 8A STGD8NC60K 600V 2.2V 8A STGP8NC60K 600V 2.2V 8A • Lower on voltage drop (Vcesat)


    Original     		PDF STGB8NC60K STGD8NC60K STGP8NC60K O-220 O-220 gp8nc60

    GP8NC60KD

    Abstract: gp8nc60 gd8nc60kd STGP8NC60KD GB8NC60KD
    Text: STGB8NC60KD - STGD8NC60KD STGP8NC60KD N-channel 600V - 8A - D2PAK / DPAK / TO-220 Short circuit rated PowerMESH IGBT Features Type VCES VCE sat Typ @25°C IC @100°C STGB8NC60KD 600V 2.2V 8A STGD8NC60KD 600V 2.2V 8A STGP8NC60KD 600V 2.2V 8A • Lower on voltage drop (Vcesat)


    Original     		PDF STGB8NC60KD STGD8NC60KD STGP8NC60KD O-220 O-220 GP8NC60KD gp8nc60 gd8nc60kd STGP8NC60KD GB8NC60KD

    gp8nc60

    Abstract: GD8NC60K GB8NC60K STGP8NC60K GP8NC60K JESD97 STGB8NC60K STGD8NC60K
    Text: STGB8NC60K - STGD8NC60K STGP8NC60K N-channel 600V - 8A - D2PAK / DPAK / TO-220 Short circuit rated PowerMESH IGBT Features Type VCES VCE sat Typ @25°C IC @100°C STGB8NC60K 600V 2.2V 8A STGD8NC60K 600V 2.2V 8A STGP8NC60K 600V 2.2V 8A • Lower on voltage drop (Vcesat)


    Original     		PDF STGB8NC60K STGD8NC60K STGP8NC60K O-220 STGB8NC60K gp8nc60 GD8NC60K GB8NC60K STGP8NC60K GP8NC60K JESD97 STGD8NC60K

    Untitled

    Abstract: No abstract text available
    Text: STB8NM60D STP8NM60D N-CHANNEL 600V - 0.9Ω - 8A - TO-220/D2PAK Fast Diode MDmesh Power MOSFET General features Type VDSS RDS on ID PTOT STB8NM60D STP8NM60D 600V 600V < 1.0Ω < 1.0Ω 8A 8A 100W 100W • High dv/dt and avalanche capabilities ■ 100% avalanche rated


    Original     		PDF STB8NM60D STP8NM60D O-220/D2PAK O-220

    B8NM60D

    Abstract: JESD97 STB8NM60D STP8NM60D ZVS phase-shift converters
    Text: STB8NM60D STP8NM60D N-CHANNEL 600V - 0.9Ω - 8A - TO-220/D2PAK Fast Diode MDmesh Power MOSFET General features Type VDSS RDS on ID PTOT STB8NM60D STP8NM60D 600V 600V < 1.0Ω < 1.0Ω 8A 8A 100W 100W • High dv/dt and avalanche capabilities ■ 100% avalanche rated


    Original     		PDF STB8NM60D STP8NM60D O-220/D2PAK O-220 B8NM60D JESD97 STB8NM60D STP8NM60D ZVS phase-shift converters

    Untitled

    Abstract: No abstract text available
    Text: FQP8N60C/FQPF8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQP8N60C/FQPF8N60C 10ner

    FQPF8N60C equivalent

    Abstract: FQPF8N60C FQP8N60C
    Text: FQP8N60C/FQPF8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQP8N60C/FQPF8N60C FQPF8N60C equivalent FQPF8N60C FQP8N60C

    8n60c

    Abstract: No abstract text available
    Text: TM FQB8N60C / FQI8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB8N60C FQI8N60C FQI8N60C O-262 FQI8N60CTU 8n60c

    *p8n60

    Abstract: No abstract text available
    Text: TAK CHEONG N-Channel Power MOSFET 8A, 600V, 1.0Ω GENERAL DESCRIPTION The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced technology has been especially tailored to minimize on-state


    Original     		PDF O-220AB DB-100 *p8n60

    FQB8N60C

    Abstract: FQI8N60C
    Text: TM FQB8N60C / FQI8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB8N60C FQI8N60C FQI8N60C

    8N60C

    Abstract: 8N60CT FQPF8N60CT FAN7602 FQPF8N60CYDTU FQPF8N60C AN-6014 FQPF Series
    Text: FQP8N60C/FQPF8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQP8N60C/FQPF8N60C FQPF8N60C AN-6014: AN-6014 FAN7602 FQPF8N60CT FQPF8N60CYDTU 8N60C 8N60CT FAN7602 FQPF Series

    fqpf8n60c

    Abstract: FQPF Series FQP8N60C mosfet fqpf8n60c
    Text: TM FQP8N60C/FQPF8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQP8N60C/FQPF8N60C fqpf8n60c FQPF Series FQP8N60C mosfet fqpf8n60c

    8n60c

    Abstract: SVDF8N60c
    Text: TM FQB8N60C / FQI8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB8N60C FQI8N60C O-263 FQB8N60CTM 8n60c SVDF8N60c

    Electronic Lamp Ballasts

    Abstract: DB201
    Text: TAK CHEONG N-Channel Power MOSFET 8A, 600V, 1.15Ω 1 = Gate 2 = Drain 3 = Source 1 GENERAL DESCRIPTION 2 The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced


    Original     		PDF O-220FP DB-100 Electronic Lamp Ballasts DB201

    FQB8N60C

    Abstract: FQI8N60C
    Text: QFET FQB8N60C / FQI8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB8N60C FQI8N60C FQI8N60C

    F8N60

    Abstract: p8n60 *p8n60 8n60 MOSFET 40A 600V PJF8N60
    Text: PJP8N60 / PJF8N60 TO-220AB / ITO-220AB 600V N-Channel Enhancement Mode MOSFET FEATURES • 8A , 600V, RDS ON =1.2Ω@VGS=10V, ID=4.0A • • • • • • TO-220AB ITO-220AB Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current


    Original     		PDF PJP8N60 PJF8N60 O-220AB ITO-220AB O-220AB 2002/95/EC ITO-220AB MIL-STD-750 F8N60 p8n60 *p8n60 8n60 MOSFET 40A 600V PJF8N60

    STP8NM60

    Abstract: No abstract text available
    Text: STP8NM60 N-CHANNEL 600V - 0.9Ω - 8A TO-220 MDmesh Power MOSFET PRELIMINARY DATA • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STP8NM60 600V < 1Ω 8A TYPICAL RDS(on) = 0.9Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE


    Original     		PDF STP8NM60 O-220 STP8NM60

    Untitled

    Abstract: No abstract text available
    Text: STP8NM60 N-CHANNEL 600V - 0.9Ω - 8A TO-220 MDmesh Power MOSFET PRELIMINARY DATA • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STP8NM60 600V < 1Ω 8A TYPICAL RDS(on) = 0.9Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE


    Original     		PDF O-220 STP8NM60 O-220

    Untitled

    Abstract: No abstract text available
    Text: STP8NM60 N-CHANNEL 600V - 0.9Ω - 8A TO-220 MDmesh Power MOSFET PRELIMINARY DATA • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STP8NM60 600V < 1Ω 8A TYPICAL RDS(on) = 0.9Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE


    Original     		PDF O-220 STP8NM60 O-220

    STW16NB60

    Abstract: No abstract text available
    Text: STW16NB60 N-CHANNEL 600V - 0.3Ω - 16A TO-247 PowerMesh MOSFET TYPE STW16NB60 • ■ ■ ■ ■ VDSS RDS on ID 600V < 0.35 Ω 16 A TYPICAL RDS(on) = 0.3Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED


    Original     		PDF STW16NB60 O-247 STW16NB60

    STW16NB60

    Abstract: No abstract text available
    Text: STW16NB60 N-CHANNEL 600V - 0.3Ω - 16A TO-247 PowerMesh MOSFET TYPE STW16NB60 • ■ ■ ■ ■ VDSS RDS on ID 600V < 0.35 Ω 16 A TYPICAL RDS(on) = 0.3Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED


    Original     		PDF STW16NB60 O-247 STW16NB60

    mosfet p 30v 8a

    Abstract: STW16NB60
    Text: STW16NB60 N-CHANNEL 600V - 0.3Ω - 16A TO-247 PowerMesh MOSFET TYPE STW16NB60 • ■ ■ ■ ■ VDSS RDS on ID 600V < 0.35 Ω 16 A TYPICAL RDS(on) = 0.3Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED


    Original     		PDF STW16NB60 O-247 mosfet p 30v 8a STW16NB60

    Untitled

    Abstract: No abstract text available
    Text: KSM8N60C/KSMF8N60C 600V N-Channel MOSFET TO-220 TO-220F Features • • • • • • 7.5A, 600V, RDS on = 1.2Ω @VGS = 10 V Low gate charge ( typical 28 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description


    Original     		PDF KSM8N60C/KSMF8N60C O-220 O-220F