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    N 410 TRANSISTOR Search Results

    N 410 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    N 410 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    071 0039

    Abstract: ngb15n41 NGB15N41CLT4
    Text: NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts http://onsemi.com N−Channel DPAK, D2PAK and TO−220 15 AMPS 410 VOLTS VCE on 3 2.1 V @ IC = 10 A, VGE . 4.5 V This Logic Level Insulated Gate Bipolar Transistor (IGBT) features


    Original     		PDF NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL O-220 NGD15N41CL/D 071 0039 ngb15n41 NGB15N41CLT4

    NGB15N41CLT4

    Abstract: NGD15N41CL NGD15N41CLT4 NGP15N41CL
    Text: NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts http://onsemi.com N−Channel DPAK, D2PAK and TO−220 15 AMPS 410 VOLTS VCE on 3 2.1 V @ IC = 10 A, VGE . 4.5 V This Logic Level Insulated Gate Bipolar Transistor (IGBT) features


    Original     		PDF NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL O-220 NGD15N41CL/D NGB15N41CLT4 NGD15N41CL NGD15N41CLT4 NGP15N41CL

    15N41CLG

    Abstract: 15N41G 15n41 NGP15N41CLG 15N41CLG transistor NGD15N41A 350VVGE gd 361 transistor NGB15N41A NGP15N41AC
    Text: NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL, NGP15N41ACL Ignition IGBT 15 A, 410 V http://onsemi.com 15 AMPS 410 VOLTS VCE on 3 2.1 V @ IC = 10 A, VGE . 4.5 V N−Channel DPAK, D2PAK and TO−220 This Logic Level Insulated Gate Bipolar Transistor (IGBT) features


    Original     		PDF NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL, NGP15N41ACL O-220 NGD15N41CL/D 15N41CLG 15N41G 15n41 NGP15N41CLG 15N41CLG transistor NGD15N41A 350VVGE gd 361 transistor NGB15N41A NGP15N41AC

    ignition IGBT

    Abstract: ngb15n41 aac marking NGB15N41CLT4
    Text: NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts http://onsemi.com N−Channel DPAK, D2PAK and TO−220 15 AMPS 410 VOLTS VCE on 3 2.1 V @ IC = 10 A, VGE . 4.5 V This Logic Level Insulated Gate Bipolar Transistor (IGBT) features


    Original     		PDF NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL O-220 1255C) NGD15N41CL NGD15N41CLT4 ignition IGBT ngb15n41 aac marking NGB15N41CLT4

    15N41G

    Abstract: No abstract text available
    Text: NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL, NGP15N41ACL Ignition IGBT 15 A, 410 V http://onsemi.com 15 AMPS 410 VOLTS VCE on 3 2.1 V @ IC = 10 A, VGE . 4.5 V N−Channel DPAK, D2PAK and TO−220 This Logic Level Insulated Gate Bipolar Transistor (IGBT) features


    Original     		PDF NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL, NGP15N41ACL NGD15N41CL/D 15N41G

    15N41CLG

    Abstract: 15N41CLG transistor 15N41G 15n41 NGP15N41CLG NGB15N41CLT4
    Text: NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts http://onsemi.com N−Channel DPAK, D2PAK and TO−220 15 AMPS 410 VOLTS VCE on 3 2.1 V @ IC = 10 A, VGE . 4.5 V This Logic Level Insulated Gate Bipolar Transistor (IGBT) features


    Original     		PDF NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL O-220 NGD15N41CL/D 15N41CLG 15N41CLG transistor 15N41G 15n41 NGP15N41CLG NGB15N41CLT4

    15N41cLG

    Abstract: 15N41G 15n41 NGP15N41CLG 15N41CLG transistor NGD15N41CL NGB15N41CL NGD15N41CLT4 NGP15N41CL NGB15N41CLT4
    Text: NGD15N41CL, NGB15N41CL, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts http://onsemi.com N−Channel DPAK, D2PAK and TO−220 15 AMPS 410 VOLTS VCE on 3 2.1 V @ IC = 10 A, VGE . 4.5 V This Logic Level Insulated Gate Bipolar Transistor (IGBT) features


    Original     		PDF NGD15N41CL, NGB15N41CL, NGP15N41CL O-220 NGD15N41CL/D 15N41cLG 15N41G 15n41 NGP15N41CLG 15N41CLG transistor NGD15N41CL NGB15N41CL NGD15N41CLT4 NGP15N41CL NGB15N41CLT4

    NGP15N41CL

    Abstract: NGB15N41CLT4 NGD15N41CL NGD15N41CLT4 Direct fuel injection aac marking
    Text: NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts http://onsemi.com N–Channel DPAK, D2PAK and TO–220 This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped


    Original     		PDF NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL r14525 NGD15N41CL/D NGP15N41CL NGB15N41CLT4 NGD15N41CL NGD15N41CLT4 Direct fuel injection aac marking

    NGD15N41CL-D

    Abstract: NGP15N41CL NGB15N41CLT4 NGD15N41CL NGD15N41CLT4
    Text: NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts http://onsemi.com N–Channel DPAK, D2PAK and TO–220 This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped


    Original     		PDF NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL r14525 NGD15N41CL/D NGD15N41CL-D NGP15N41CL NGB15N41CLT4 NGD15N41CL NGD15N41CLT4

    Untitled

    Abstract: No abstract text available
    Text: NGD15N41CL Product Preview Ignition IGBT 15 Amps, 410 Volts N–Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGD15N41CL

    Untitled

    Abstract: No abstract text available
    Text: SSM3K107TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K107TU High-Speed Switching Applications • 4 V drive • Low ON-resistance: Unit: mm 2.1±0.1 Ron = 410 mΩ max (@VGS = 4V) Characteristic Symbol Rating Unit Drain–source voltage


    Original     		PDF SSM3K107TU

    8002B

    Abstract: SSM3K107TU
    Text: SSM3K107TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K107TU High-Speed Switching Applications • 4 V drive • Low ON-resistance: Unit: mm 2.1±0.1 Ron = 410 mΩ max (@VGS = 4V) Characteristic Drain–source voltage Rating Unit VDS


    Original     		PDF SSM3K107TU 8002B SSM3K107TU

    MGB15N40CL

    Abstract: MGB15N40CLT4 MGP15N40CL G15N40
    Text: MGP15N40CL, MGB15N40CL Preferred Device Ignition IGBT 15 Amps, 410 Volts N–Channel TO–220 and D2PAK http://onsemi.com This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF MGP15N40CL, MGB15N40CL r14525 MGP15N40CL/D MGB15N40CL MGB15N40CLT4 MGP15N40CL G15N40

    SSM3K107TU

    Abstract: No abstract text available
    Text: SSM3K107TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K107TU High-Speed Switching Applications Unit: mm Ron = 410 mΩ max (@VGS = 4V) Ron = 200 mΩ (max) (@VGS = 10V) 2.1±0.1 Symbol Rating Unit Drain–source voltage VDS 20 V Gate–source voltage


    Original     		PDF SSM3K107TU SSM3K107TU

    SSM3K107TU

    Abstract: No abstract text available
    Text: SSM3K107TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K107TU High-Speed Switching Applications Unit: mm Ron = 410 mΩ max (@VGS = 4V) Ron = 200 mΩ (max) (@VGS = 10V) 2.1±0.1 Symbol Rating Unit Drain–source voltage VDS 20 V Gate–source voltage


    Original     		PDF SSM3K107TU SSM3K107TU

    SSM3K107TU

    Abstract: No abstract text available
    Text: SSM3K107TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K107TU High-Speed Switching Applications Unit: mm Ron = 410 mΩ max (@VGS = 4V) Ron = 200 mΩ (max) (@VGS = 10V) 2.1±0.1 Symbol Rating Unit Drain–source voltage VDS 20 V Gate–source voltage


    Original     		PDF SSM3K107TU SSM3K107TU

    5N40CL

    Abstract: G15N40CLG MGB15N40CL MGP15N40CL G15N40
    Text: MGP15N40CL, MGB15N40CL Preferred Device Ignition IGBT 15 Amps, 410 Volts N−Channel TO−220 and D2PAK http://onsemi.com This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF MGP15N40CL, MGB15N40CL O-220 MGP15N40CL/D 5N40CL G15N40CLG MGB15N40CL MGP15N40CL G15N40

    Untitled

    Abstract: No abstract text available
    Text: MGP15N40CL, MGB15N40CL Preferred Device Ignition IGBT 15 Amps, 410 Volts N−Channel TO−220 and D2PAK http://onsemi.com This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF MGP15N40CL, MGB15N40CL O-220 1255C)

    TRANSISTOR T 410

    Abstract: abf410 DSG52 922S BF410D 410c BF410A BF410C Q68000-A5172 Q68000-A5174
    Text: 25C D • fl23SbQS 000447*1 1 ■ S I E G . T'-'il-zS' Low-Noise N-channel Junction Field-Effect Transistor for RF Applications D 79 BF 410 A BF 410 B BF 410 C BF 410 D SIEMENS AKTIENGESELLSCHAF BF 4 1 0 A, B, C, and D are asymmetric epitaxial planar N-channel junction field-effect


    OCR Scan     		PDF fl235bOS Q68000-A5440 Q68000-A5172 Q68000-A5173 Q68000-A5174 Q68000-A5175 BF410B Vbs-10V 0G04MÃ BF410D TRANSISTOR T 410 abf410 DSG52 922S BF410D 410c BF410A BF410C

    BF410C

    Abstract: a5175
    Text: asc » • fl23SbQS 000447*1 1 « S I E G . 7^3/-Z.S^ Low-Noise N-channel Junction Field-Effect Transistor for RF Applications D 79 SIEMENS AKTI EN GE SE LLS CH AF BF 410 A BF 410 B BF 410 C BF 410 D BF 4 1 0 A, B, C, and D are asymmetric epitaxial planar N-channel junction field-effect


    OCR Scan     		PDF fl23SbQS Q68000-A5440 68000-A5172 68000-A5173 68000-A5174 68000-A5175 0Q044 BF410D BF410C a5175

    7420A

    Abstract: 7.5b 35 2N5840 2N5839
    Text: File Number 410 2N5838, 2N5839, 2N5840 High-Voltage, High-Power Silicon N-P-N Power Transistors For Switching and Linear Applications in Military, Industrial, and Commercial Equipment Features: • M aximum safe-area-of-operation curves m Low saturation voltages


    OCR Scan     		PDF 2N5838, 2N5839, 2N5840 2N5840] 2N5839] 2N5838] 2N5839 2N5840* T0-204A 7420A 7.5b 35 2N5840

    TA7420

    Abstract: TA7530 TA7513 2N5840 2NS83 Tektronix P6019 2N5839 2N5838 equivalent 2n5840
    Text: 3875081 G E SOLID STATECI DE | 3 û 7 S D f l l 0017172 I D 7^77 High-Voltage Power Transistors _ 2N5838, 2N5839, 2N5840 File Number 410 High-Voltage, High-Power Silicon N-P-N Power Transistors


    OCR Scan     		PDF 2N5838, 2N5839, 2N5840 2N5840] 2N5839] 2NS838] 92CS-27S16 RCA-2N5838, 2N5839 2N5840" TA7420 TA7530 TA7513 2NS83 Tektronix P6019 2N5838 equivalent 2n5840

    TA7420

    Abstract: 2N5840 2N5839
    Text: HARRIS. SEfllCOND S E CT OR File Number SbE D 4302271 00404Ô1 Ô23 « H A S 2N5838, 2N5839, 2N5840 m 410 High-Voltage, High-Power Silicon N-P-N Power Transistors For Switching and Linear Applications in Military, Industrial, and Commercial Equipment Feature*:


    OCR Scan     		PDF 2N5838, 2N5839, 2N5840 2N5840] 2W5839] 2N5838] TA7513, TA7530, TA7420A, O-204AA TA7420 2N5840 2N5839

    34A-100

    Abstract: No abstract text available
    Text: TIP34; A; B; C PHILIPS INTERNATIONAL 5bE 3 • 711002b 0043512 410 » P H I N SILICON POWER TRANSISTORS P-N-P epitaxial-base power transistors in the plastic SOT-93 envelope. These transistors are intended for use in audio output stages and general amplifier and switching applications. N-P-N complements are


    OCR Scan     		PDF TIP34; 711002b OT-93 TIP33, TIP33A, TIP33B TIP33C. TIP34 34A-100