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Abstract: No abstract text available
Text: MWT1171HP Transistors N-Channel UHF/Microwave MESFET V BR DSS (V)9 V(BR)GSS (V)6 I(D) Max. (A)1.3 P(D) Max. (W)4.0 Maximum Operating Temp (øC)150 I(DSS) Min. (A)400m I(DSS) Max. (A)920m @V(DS) (V) (Test Condition)3.0 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.290m
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MWT1171HP
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2SC3355 SPICE MODEL
Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness
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F2002:
F2003:
F2004:
2SC3355 SPICE MODEL
transistor C2003
C319B
MGF1412
RF TRANSISTOR 10GHZ
MRF134 rf model .lib file
2SK571
MGF1402
MRF9331
pb_hp_at41411_19921101
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MWT1171HP
Abstract: No abstract text available
Text: MICROWAVE TECHNOLOGY bbE D • blEMlQG ÜDDDS^b ET7 ■ PIRIdV MwT-11 16 GHz HIGH POWER GaAs FET MicroWave Technology 1-751 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES 1-731 1 WATT POWER OUTPUT AT 12 GHZ HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY M ETAL/GOLD
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MwT-11
MwT-11
MWT1171HP
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MWT1171HP
Abstract: 1171H
Text: M e M wT -11 16 GHz HIGH POWER GaAs FET ? MicroWave Technology 4268 Solar way Fremont, 94538 510-651-670q f a x s io -651-22Q8 FEATURES »-751 t-73-l ca • 1 WATT POWER OUTPUT AT 12 GHZ • HIGH ASSOCIATED GAIN 343 • 0.3 MICRON REFRACTORY METAL/GOLD GATE
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t-73-l
510-651-670q
-651-22Q8
MwT-11
MwT-11
-F90-
MWT1171HP
1171H
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