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    MWE6IC9100GNR1 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MWE6IC9100GNR1 Freescale Semiconductor RF LDMOS Wideband Integrated Power Amplifiers Original PDF

    MWE6IC9100GNR1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CRCW08054701FKEA

    Abstract: MWE6IC9100N ZO 607 MA MWE6IC9100GNR1 MWE6IC9100NBR1 MWE6IC9100NR1 A114 A115 AN1977 AN1987
    Text: Freescale Semiconductor Technical Data Document Number: MWE6IC9100N Rev. 3, 12/2008 RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9100N wideband integrated circuit is designed with on - chip matching that makes it usable from 869 to 960 MHz. This multi - stage


    Original     		PDF MWE6IC9100N MWE6IC9100N MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1 CRCW08054701FKEA ZO 607 MA MWE6IC9100NBR1 A114 A115 AN1977 AN1987

    J1220

    Abstract: 100WpEp MWE6IC9100N
    Text: Freescale Semiconductor Technical Data Document Number: MWE6IC9100N-2 Rev. 5, 12/2010 RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9100N wideband integrated circuit is designed with on-chip matching that makes it usable from 869 to 960 MHz. This multi-stage


    Original     		PDF MWE6IC9100N--2 MWE6IC9100N MWE6IC9100GNR1 MWE6IC9100NBR1 J1220 100WpEp

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MWE6IC9100N Rev. 3, 12/2008 ARCHIVE INFORMATION The MWE6IC9100N wideband integrated circuit is designed with on-chip matching that makes it usable from 869 to 960 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base


    Original     		PDF MWE6IC9100N MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1

    power transistors table

    Abstract: MW6S010NR1 mrfe6s9060n MHW6342TN Motorola Microwave power Transistor "RF high power Amplifier" MRF6V2300N MRFG35010R1 MRF6P23190HR6 MRF373 PUSH PULL
    Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 34 6/2008 RF Product Selector Guide Offering a broad portfolio of RF products, Freescale Semiconductor primarily serves the wireless infrastructure, wireless subscriber, general purpose amplifier, broadcast and industrial markets. Freescale pioneered RF technology and continues to be the leader in the field by providing the quality,


    Original     		PDF

    MRF8P9040N

    Abstract: rf Amplifier mhz Doherty 470-860 MRF1513NT1 s2p MRF8S21100H MRF8S21100HS MRF8S9220HR3 AN1643 MRF6P23190H MRF8S9170NR3 MW6S004NT1
    Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 35.1 5/2010 RF Product Selector Guide Freescale Semiconductor offers a comprehensive portfolio of RF products, primarily serving the cellular infrastructure, general purpose amplifier, broadcast, aerospace and industrial


    Original     		PDF

    ATC100B331

    Abstract: MS 1117 ADC MHVIC910HR2 A114 A115 AN1977 AN1987 JESD22 MWE6IC9100GNR1 MWE6IC9100N
    Text: Freescale Semiconductor Technical Data Document Number: MWE6IC9100N Rev. 2, 6/2007 RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9100N wideband integrated circuit is designed with on - chip matching that makes it usable from 869 to 960 MHz. This multi - stage


    Original     		PDF MWE6IC9100N MWE6IC9100N MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1 ATC100B331 MS 1117 ADC MHVIC910HR2 A114 A115 AN1977 AN1987 JESD22

    ATC100B331JT200XT

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifier The MWE6IC9100N wideband integrated circuit is designed with on-chip matching that makes it usable from 869 to 960 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base


    Original     		PDF MWE6IC9100N--1 MWE6IC9100N 40tors MWE6IC9100NR1 MWE6IC9100N--1 ATC100B331JT200XT

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MWE6IC9100N-2 Rev. 6, 10/2011 RF LDMOS Wideband Integrated Power Amplifier The MWE6IC9100N wideband integrated circuit is designed with on-chip matching that makes it usable from 869 to 960 MHz. This multi-stage


    Original     		PDF MWE6IC9100N--2 MWE6IC9100N MWE6IC9100NBR1 MWE6IC9100N--2

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MWE6IC9100N Rev. 0, 2/2007 RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9100N wideband integrated circuit is designed with on - chip matching that makes it usable from 869 to 960 MHz. This multi - stage


    Original     		PDF MWE6IC9100N MWE6IC9100N MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1

    MWE6IC9100N

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifier The MWE6IC9100N wideband integrated circuit is designed with on-chip matching that makes it usable from 869 to 960 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base


    Original     		PDF MWE6IC9100N--1 MWE6IC9100N MWE6IC9100NR1 MWE6IC9100N--1