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    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TIM7984-14L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -43 dBc at Po = 31.5 dBm, - Single carrier level • High power - P1dB = 42.0 dBm at 7.9 GHz to 8.4 GHz


    Original     		PDF MW51150196 TIM7984-14L 2-16G1B)

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7984-14L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -43 dBc at Po = 31.5 dBm, - Single carrier level • High power - P-|dB = 42.0 dBm at 7.9 GHz to 8.4 GHz


    OCR Scan     		PDF TIM7984-14L 2-16G1B) MW51150196 QGS27Qb M7984-141Power T0R75SG 0G227DÃ

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TIM7984-14L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low in te rm o d u la tio n d is to rtio n - IM 3 = -43 d B c a t Po = 3 1 .5 d B m , - S in g le c a rrie r level • H igh p o w e r - P idB = 42.0 d B m at 7.9 G H z to 8 .4 G H z


    OCR Scan     		PDF TIM7984-14L 2-16G1B) MW51150196 TIM7984-141Power