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    TIM5964-8SL

    Abstract: No abstract text available
    Text: TOSHIBA TIM5964-8SL MICROWAVE POWER GaAs FET High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28.5 dBm, Single Carrier Level • High power - P1dB = 39.5 dBm at 5.9 GHz to 6.4 GHz


    Original     		PDF TIM5964-8SL 2-11D1B) MW50750196 TIM5964-8SL

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-8SL High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM 3 = -4 5 d B c at Po = 2 8 .5 d B m , Single Carrier Level • High po w e r - PidB = 39-5 d B m at 5.9 G H z to 6.4 GHz


    OCR Scan     		PDF TIM5964-8SL TIM5964-8SL MW50750196

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-8SL High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28.5 dBm, Single Carrier Level • High power - P-idB = 39-5 dBm at 5.9 GHz to 6.4 GHz


    OCR Scan     		PDF TIM5964-8SL MW50750196 G02251S