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    TIM5964-4L

    Abstract: No abstract text available
    Text: TOSHIBA TIM5964-4L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 25 dBm, - Single carrier level • High power - P1dB = 36 dBm at 5.9 GHz to 6.4 GHz • High gain


    Original     		PDF TIM5964-4L 2-11D1B) MW50710196 TIM5964-4L

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-4L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low in te rm o d u la tio n d is to rtio n - IM 3 = -45 d B c a t Po = 25 d B m , - S in g le c a rrie r level • H igh p o w e r - P idB = 36 d B m a t 5.9 G H z to 6.4 G H z


    OCR Scan     		PDF TIM5964-4L MW50710196 TIM5964-4L

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-4L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 25 dBm, - Single carrier level • High power - P-|dB = 36 dBm at 5.9 GHz to 6.4 GHz


    OCR Scan     		PDF TIM5964-4L MW50710196 TIM5964-4L