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    TIM5359-16

    Abstract: No abstract text available
    Text: TOSHIBA TIM5359-16 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 42.5 dBm at 5.3 GHz to 5.9 GHz • High gain - G1dB = 7.5 dB at 5.3 GHz to 5.9 GHz • Broad band internally matched • Hermetically sealed package


    Original     		TIM5359-16 2-16G1B) MW50670196 TIM5359-16 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5359-16 Internally Matched Power GaAs FETs C-Band Features • High power • p i d B = 42.5 dBm at 5.3 GHz to 5.9 GHz • High gain - G1dB = 7.5 dB at 5.3 GHz to 5.9 GHz • Broad band internally matched • Hermetically sealed package


    OCR Scan     		TIM5359-16 MW50670196 0G2242b TIM5359-16 PDF