RAYTHEON
Abstract: C17-C19
Text: 5D\WKHRQ&RPPHUFLDO OHFWURQLFV RMPA1901-53 PCS CDMA GaAs MMIC Power Amplifier Description Features The RMPA1901-53 is a monolithic high efficiency power amplifier for PCS CDMA applications. Performance parameters may be slightly adjusted by “tweaking” the off-chip matching components. The amplifier circuit design is
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RMPA1901-53
RMPA1901-53
RAYTHEON
C17-C19
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darlington pair transistor
Abstract: 6LF6 common collector amplifier circuit designing micro-x mhz ghz microwave GRM188R71E473K Amplifier SOT-89 c4 0603CS-33NX_LU SKY65014 sky65015-70lf transistor Common Base configuration
Text: APPLICATION NOTE Gain Block Bias Networks Introduction Skyworks gain block amplifiers are InGaP/GaAs HBT integrated circuits. They use a Darlington-pair transistor configuration with bias and feedback resistors properly selected to determine the gain, input and output impedances and bias parameters. A schematic representation of the amplifier is shown in Figure 1.
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pin configuration of 8251
Abstract: C17-C19 PA1900 RMPA1901-53 MURATA MW
Text: RMPA1901-53 PCS CDMA GaAs MMIC Power Amplifier Description Features The RMPA1901-53 is a monolithic high efficiency power amplifier for PCS CDMA applications. Performance parameters may be slightly adjusted by “tweaking” the off-chip matching components. The amplifier circuit design
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RMPA1901-53
RMPA1901-53
pin configuration of 8251
C17-C19
PA1900
MURATA MW
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2SC9018
Abstract: z5u transistor Z5U diode 2sc9018 equivalent SL4X30MW100T 2sc9018 transistor
Text: AN602 S i4822/26/ 27/ 40/ 44 A N T E N N A, S C H E M A T I C, L A Y O U T, AND DESIGN GUIDELINES 1. Introduction This document provides general Si4822/26/27/40/44 design and AM/FM/SW antenna selection guidelines, including schematic, BOM, and PCB layout. All users should follow the Si4822/26/27/40/44 design guidelines
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AN602
i4822/26/
Si4822/26/27/40/44
Si48422/26/27/40/44
2SC9018
z5u transistor
Z5U diode
2sc9018 equivalent
SL4X30MW100T
2sc9018 transistor
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IS136
Abstract: TRF1500
Text: TRF1500 DUAL-BAND/DUAL-MODE PCS RECEIVER SLWS041A – JANUARY 1998 D D D D D Low-Noise Amplifier for Each Band RF Mixer for Each Band With Image Rejection Configuration for High Band IF Amplifier for Both Low and High Bands Operates From a Supply Voltage Range of
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TRF1500
SLWS041A
IS136)
48-Pin
TRF1500
800-MHz
1900-MHz
IS136
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GRM36COG470J
Abstract: 0603HS3N9 GRM36COG101J 903-373j 0603HS-3N9TKBC 142-0701-801 GRM36cog IS136 TRF1500 SAFC881.5MA70N
Text: TRF1500 DUAL-BAND/DUAL-MODE PCS RECEIVER SLWS041A – JANUARY 1998 D D D D D Low-Noise Amplifier for Each Band RF Mixer for Each Band With Image Rejection Configuration for High Band IF Amplifier for Both Low and High Bands Operates From a Supply Voltage Range of
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TRF1500
SLWS041A
IS136)
48-Pin
TRF1500
800-MHz
1900-MHz
GRM36COG470J
0603HS3N9
GRM36COG101J
903-373j
0603HS-3N9TKBC
142-0701-801
GRM36cog
IS136
SAFC881.5MA70N
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NESG250134
Abstract: No abstract text available
Text: NEC's NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER NESG250134 AMPLIFICATION 800 mW 3-PIN POWER MINIMOLD (34 PACKAGE) FEATURES • THIS PRODUCT IS SUITABLE FOR MEDIUM OUTPUT POWER (800 mW) AMPLIFICATION PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 15 dBm, f = 460 MHz
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NESG250134
NESG250134-T1
NESG250134-AZ
NESG250134-T1-AZ
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0603HS-10NTJBC
Abstract: 0603HS-68NTJBC GRM36COG470J IS136 TRF1500 LNA T20 GRM36cog GRM36COG100D
Text: TRF1500 DUAL-BAND/DUAL-MODE PCS RECEIVER SLWS041 – DECEMBER 1997 D D D D D Low-Noise Amplifier for Each Band RF Mixer for Each Band With Image Rejection Configuration for High Band IF Amplifier for Both Low and High Bands Operates From a Supply Voltage Range of
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TRF1500
SLWS041
IS136)
48-Pin
TRF1500
800-MHz
1900-MHz
0603HS-10NTJBC
0603HS-68NTJBC
GRM36COG470J
IS136
LNA T20
GRM36cog
GRM36COG100D
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NESG250134
Abstract: NESG250134-AZ NESG250134-T1-AZ
Text: NEC's NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER NESG250134 AMPLIFICATION 800 mW 3-PIN POWER MINIMOLD (34 PACKAGE) FEATURES • THIS PRODUCT IS SUITABLE FOR MEDIUM OUTPUT POWER (800 mW) AMPLIFICATION PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 15 dBm, f = 460 MHz
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NESG250134
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NESG250134
NESG250134-AZ
NESG250134-T1-AZ
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BR 11052
Abstract: GRM36cog IS136 TRF1500 A 3 11052 lownoise t20 amphenol 24- 28 pf BR+11052
Text: TRF1500 DUAL-BAND/DUAL-MODE PCS RECEIVER SLWS041A – JANUARY 1998 D D D D D Low-Noise Amplifier for Each Band RF Mixer for Each Band With Image Rejection Configuration for High Band IF Amplifier for Both Low and High Bands Operates From a Supply Voltage Range of
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TRF1500
SLWS041A
IS136)
48-Pin
TRF1500
800-MHz
1900-MHz
BR 11052
GRM36cog
IS136
A 3 11052
lownoise t20
amphenol 24- 28 pf
BR+11052
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Untitled
Abstract: No abstract text available
Text: TRF1500 DUAL-BAND/DUAL-MODE PCS RECEIVER SLWS041A – JANUARY 1998 D D D D D Low-Noise Amplifier for Each Band RF Mixer for Each Band With Image Rejection Configuration for High Band IF Amplifier for Both Low and High Bands Operates From a Supply Voltage Range of
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TRF1500
SLWS041A
IS136)
48-Pin
TRF1500
800-MHz
1900-MHz
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NESG250134
Abstract: No abstract text available
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG250134 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 800 mW 3-PIN POWER MINIMOLD (34 PACKAGE) FEATURES • This product is suitable for medium output power (800 mW) amplification PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 15 dBm, f = 460 MHz
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TG-UTB01527S
Abstract: SL4X30MW100T si4844 2SC9018 SL8X50MW70T UMEC TG-UTB01526 SW9 357 TG-UTB01526 2sc9018 transistor 2sc9018 equivalent
Text: AN602 S i484 X - A A N TE N N A , S CHEMATIC , L AYOUT , A N D D E S I G N G UIDEL INES 1. Introduction This document provides general Si484x-A design and AM/FM/SW antenna selection guidelines, including schematic, BOM, and PCB layout. All users should follow the Si484x design guidelines presented in “2. Si484x-A
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AN602
Si484x-A
Si484x
Si4844
TG-UTB01527S
SL4X30MW100T
si4844
2SC9018
SL8X50MW70T
UMEC TG-UTB01526
SW9 357
TG-UTB01526
2sc9018 transistor
2sc9018 equivalent
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diode zener c25
Abstract: diode zener c29 zener DIODE C25 transistor c323 zener diode c18 st ST transistor c322 z5 zener diode diode zener c23 diode zener c26 zener diode c32
Text: AN15 D E S I G N C O N S I D E R A T I O N S F O R T H E S I 303 4/38/4 4 Introduction The Si3034/38/44 direct access arrangement DAA provides worldwide compliance for modems and other communications equipment that is connected to analog telephone networks. Many different standards exist to
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Si3034/
IEC1000-4
diode zener c25
diode zener c29
zener DIODE C25
transistor c323
zener diode c18 st
ST transistor c322
z5 zener diode
diode zener c23
diode zener c26
zener diode c32
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DIODE T3D 9D
Abstract: No abstract text available
Text: LM27341 , LM27342 , LM27341-Q1 , LM27342-Q1 www.ti.com SNVS497E – NOVEMBER 2008 – REVISED APRIL 2013 LM27341/LM27342/LM27341-Q1/LM27342-Q1 2 MHz 1.5A/2A Wide Input Range Step-Down DC-DC Regulator with Frequency Synchronization Check for Samples: LM27341 , LM27342 , LM27341-Q1 , LM27342-Q1
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SNVS497E
LM27341/LM27342/LM27341-Q1/LM27342-Q1
DIODE T3D 9D
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PA DRIVER AMPLIFIER
Abstract: schematics for a PA amplifier balun diode mixer "rf modulator" GRMx7r rf modulator datasheet FR10K GRM39COG TCM4400 TRF1020
Text: TRF3520 GSM RF MODULATOR/DRIVER AMPLIFIER SLWS060A – MAY 1998 D D D D Modulation and Upconversion from I/Q Baseband to RF on Single Chip Designed for GSM Portable Cellular Telephones Internal VCO and SSB Mixer for Transmit Carrier Generation Internal RF Filter for Minimal External Parts
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48-Pin
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PA DRIVER AMPLIFIER
schematics for a PA amplifier
balun diode mixer
"rf modulator"
GRMx7r
rf modulator datasheet
FR10K
GRM39COG
TCM4400
TRF1020
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3214W-1-103E
Abstract: DB-54003L-880 EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 PD54003L gP DIODE zener diode 5.1 v panasonic capacitor date codes
Text: DB-54003L-880 RF POWER AMPLIFIER USING 1 x PD54003L PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs Figure 1. Demo Board Picture GENERAL FEATURES • ■ ■ ■ ■ ■ ■ ■ EXCELLENT THERMAL STABILITY FREQUENCY 800 - 880 MHz SUPPLY VOLTAGE
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PD54003L
DB-54003L-880
3214W-1-103E
EEVHB1V100P
EXCELDRC35C
GRM42-6C0G102J50
PD54003L
gP DIODE
zener diode 5.1 v
panasonic capacitor date codes
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FR10K
Abstract: GRM39COG TCM4400 TRF1020 TRF3520 SSB Modulator application note LL1608-FR10K GRMx7r S-PQFP-G48
Text: TRF3520 GSM RF MODULATOR/DRIVER AMPLIFIER SLWS060A – MAY 1998 D D D D Modulation and Upconversion from I/Q Baseband to RF on Single Chip Designed for GSM Portable Cellular Telephones Internal VCO and SSB Mixer for Transmit Carrier Generation Internal RF Filter for Minimal External Parts
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48-Pin
TRF3520
900-MHz
FR10K
GRM39COG
TCM4400
TRF1020
SSB Modulator application note
LL1608-FR10K
GRMx7r
S-PQFP-G48
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GRM39COG
Abstract: FR10K TCM4400 TRF1020 TRF3520 SSB Modulator application note K3332 GRMx7r grm39cog capacitor
Text: TRF3520 GSM RF MODULATOR/DRIVER AMPLIFIER SLWS060A – MAY 1998 D D D D Modulation and Upconversion from I/Q Baseband to RF on Single Chip Designed for GSM Portable Cellular Telephones Internal VCO and SSB Mixer for Transmit Carrier Generation Internal RF Filter for Minimal External Parts
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TRF3520
SLWS060A
48-Pin
TRF3520
900-MHz
GRM39COG
FR10K
TCM4400
TRF1020
SSB Modulator application note
K3332
GRMx7r
grm39cog capacitor
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P220G
Abstract: No abstract text available
Text: TRF3520 GSM RF MODULATOR/DRIVER AMPLIFIER SLWS060A – MAY 1998 D D D D Modulation and Upconversion from I/Q Baseband to RF on Single Chip Designed for GSM Portable Cellular Telephones Internal VCO and SSB Mixer for Transmit Carrier Generation Internal RF Filter for Minimal External Parts
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TRF3520EVM
SSYA008
P220G
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NESG250134
Abstract: NESG250134-AZ NESG250134-T1-AZ
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: TRF1500 DUAL-BAND/DUAL-MODE PCS RECEIVER ^ • • • • _ SLWSQ41A-JANUARY 1998 Low-Noise Amplifier for Each Band RF Mixer for Each Band With Image Rejection Configuration for High Band IF Amplifier for Both Low and High Bands
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SLWSQ41A-JANUARY
IS136)
48-Pin
800-MHz
1900-M
F1500
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KDS0B
Abstract: kds-0b s150t
Text: TRF1500 DUAL-BAND/DUAL-MODE PCS RECEIVER SLWS041 - D ECE M B ER 1997 I • Low-Noise Amplifier for Each Band • • I • RF Mixer for Each Band With Image Rejection Configuration for High Band Suitable for Portable Dual-Band/Dual-Mode Cellular Telephones IS136
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SLWS041
IS136)
48-Pin
800-MHz
1900-MHz
KDS0B
kds-0b
s150t
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Untitled
Abstract: No abstract text available
Text: TRF3520 GSM RF MODULATOR/DRIVER AMPLIFIER SLW S060A -M AY 1998 Modulation and Upconversion from l/Q Baseband to RF on Single Chip Power Amplifier Driver Designed for GSM Portable Cellular Telephones 3.75-V Operation Internal VCO and SSB Mixer for Transmit
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S060A
48-Pin
900-MHz
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