MUR20040CT THRU MUR20060CTR Search Results

MUR20040CT THRU MUR20060CTR Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TPD4164K		Toshiba Electronic Devices & Storage Corporation	Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30
TPD4163K		Toshiba Electronic Devices & Storage Corporation	Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30
MP-5TRJ12EXTE-007		Amphenol Cables on Demand	Amphenol MP-5TRJ12EXTE-007 Modular Extension Cable, Straight-Thru, RJ12 7ft	Datasheet
MP-5FRJ11STWS-014		Amphenol Cables on Demand	Amphenol MP-5FRJ11STWS-014 Flat Silver Satin Modular Straight-Thru Cables, RJ11 / RJ11 14ft	Datasheet
MP-5FRJ12STWS-025		Amphenol Cables on Demand	Amphenol MP-5FRJ12STWS-025 Flat Silver Satin Modular Straight-Thru Cables, RJ12 / RJ12 25ft	Datasheet

MUR20040CT THRU MUR20060CTR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
ir10 diode Abstract: diode IR10 ir10 MUR20060CT MUR20040CT Text: MUR20040CT thru MUR20060CTR Silicon Super Fast Recovery Diode VRRM = 50 V - 600 V IF = 200 A Features • High Surge Capability • Types up to 600 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed	Original	PDF	MUR20040CT MUR20060CTR MUR20040CT MUR20060CT ir10 diode diode IR10 ir10 MUR20060CT
Untitled Abstract: No abstract text available Text: MUR20040CT thru MUR20060CTR Silicon Super Fast Recovery Diode VRRM = 50 V - 600 V IF = 200 A Features • High Surge Capability • Types up to 600 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed	Original	PDF	MUR20040CT MUR20060CTR MUR20040CT MUR20060CT
Untitled Abstract: No abstract text available Text: MUR20040CT thru MUR20060CTR Silicon Super Fast Recovery Diode VRRM = 50 V - 600 V IF = 200 A Features • High Surge Capability • Types up to 600 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed	Original	PDF	MUR20040CT MUR20060CTR MUR20040CT MUR20060CT
MUR20040CT thru MUR20060CTR Abstract: No abstract text available Text: Naina Semiconductor Ltd. MUR20040CT thru MUR20060CTR Super Fast Recovery Diode, 200A Features • • • • • Dual Diode Construction Low Leakage Current Low forward voltage drop High surge current capability Super Fast Switching TWIN TOWER PACKAGE Maximum Ratings TJ = 25oC unless otherwise specified	Original	PDF	MUR20040CT MUR20060CTR MUR20060CT 040CT MUR20040CT thru MUR20060CTR
Untitled Abstract: No abstract text available Text: MUR20040CT thru MUR20060CTR Silicon Super Fast Recovery Diode VRRM = 400 V - 600 V IF AV = 200 A Features • High Surge Capability • Types from 400 to 600 V VRRM Twin Tower Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)	Original	PDF	MUR20040CT MUR20060CTR MUR20040CT MUR20060CT