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    MUR20005CT THRU MUR20020CTR Search Results

    MUR20005CT THRU MUR20020CTR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    MP-5TRJ12EXTE-007 Amphenol Cables on Demand Amphenol MP-5TRJ12EXTE-007 Modular Extension Cable, Straight-Thru, RJ12 7ft Datasheet
    MP-5FRJ11STWS-014 Amphenol Cables on Demand Amphenol MP-5FRJ11STWS-014 Flat Silver Satin Modular Straight-Thru Cables, RJ11 / RJ11 14ft Datasheet
    MP-5FRJ12STWS-025 Amphenol Cables on Demand Amphenol MP-5FRJ12STWS-025 Flat Silver Satin Modular Straight-Thru Cables, RJ12 / RJ12 25ft Datasheet

    MUR20005CT THRU MUR20020CTR Datasheets Context Search

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    MUR20005CT thru MUR20020CTR

    Abstract: No abstract text available
    Text: Naina Semiconductor Ltd. MUR20005CT thru MUR20020CTR Super Fast Recovery Diode, 200A Features • • • • • Dual Diode Construction Low Leakage Current Low forward voltage drop High surge current capability Super Fast Switching TWIN TOWER PACKAGE Maximum Ratings TJ = 25oC unless otherwise specified


    Original     		PDF MUR20005CT MUR20020CTR MUR20010CT MUR20020CT MUR20005CT thru MUR20020CTR

    ir10 diode

    Abstract: MUR20020CT ir10 MUR20020CTR MUR20005CT MUR20010CT diode IR10
    Text: MUR20005CT thru MUR20020CTR Silicon Super Fast Recovery Diode VRRM = 50 V - 600 V IF = 200 A Features • High Surge Capability • Types up to 600 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed


    Original     		PDF MUR20005CT MUR20020CTR MUR20005CT MUR20010CT MUR20020CT ir10 diode MUR20020CT ir10 MUR20020CTR MUR20010CT diode IR10

    Untitled

    Abstract: No abstract text available
    Text: MUR20005CT thru MUR20020CTR Silicon Super Fast Recovery Diode VRRM = 50 V - 600 V IF = 200 A Features • High Surge Capability • Types up to 600 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed


    Original     		PDF MUR20005CT MUR20020CTR MUR20005CT MUR20010CT MUR20020CT

    Untitled

    Abstract: No abstract text available
    Text: MUR20005CT thru MUR20020CTR Silicon Super Fast Recovery Diode VRRM = 50 V - 600 V IF = 200 A Features • High Surge Capability • Types up to 600 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed


    Original     		PDF MUR20005CT MUR20020CTR MUR20005CT MUR20010CT MUR20020CT 800nless

    Untitled

    Abstract: No abstract text available
    Text: MUR20005CT thru MUR20020CTR Silicon Super Fast Recovery Diode VRRM = 50 V - 200 V IF AV = 200 A Features • High Surge Capability • Types from 50 V to 200 V VRRM Twin Tower Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)


    Original     		PDF MUR20005CT MUR20020CTR MUR20005CT MUR20010CT MUR20020CT