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    MTP4N Search Results

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    MTP4N Price and Stock

    Rochester Electronics LLC MTP4N40E

    N-CHANNEL POWER MOSFET
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    DigiKey MTP4N40E Bulk 807
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    Aptina Imaging MTP4N40E

    Trans MOSFET N-CH Si 400V 4A 3-Pin(3+Tab) TO-220
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    Verical MTP4N40E 2,516 933
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    Motorola Semiconductor Products MTP4N80E

    TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,4A I(D),TO-220AB
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    Quest Components MTP4N80E 20
    • 1 $3.57
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    ComSIT USA MTP4N80E 44
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    onsemi MTP4N40E

    Trans MOSFET N-CH 400V 4A 3-Pin(3+Tab) TO-220 '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics MTP4N40E 2,983 1
    • 1 $0.3575
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    National Semiconductor Corporation MTP4N50

    Electronic Component
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    ComSIT USA MTP4N50 25
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    MTP4N Datasheets (87)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MTP4N05L Motorola Switchmode Datasheet Scan PDF
    MTP4N05L Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan PDF
    MTP4N05L Unknown Shortform Datasheet & Cross References Data Short Form PDF
    MTP4N05L Unknown FET Data Book Scan PDF
    MTP4N06L Motorola Switchmode Datasheet Scan PDF
    MTP4N06L Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan PDF
    MTP4N06L Unknown Shortform Datasheet & Cross References Data Short Form PDF
    MTP4N06L Unknown FET Data Book Scan PDF
    MTP4N08 Fairchild Semiconductor (MTP4N08 / MTP4N10) N-Channel Power MOSFETs Scan PDF
    MTP4N08 Fairchild Semiconductor N-Channel Power MOSFETs, 5.5 A, 60-100V Scan PDF
    MTP4N08 Motorola N-Chanel TMOS Power FET Scan PDF
    MTP4N08 Motorola Switchmode Datasheet Scan PDF
    MTP4N08 Motorola European Master Selection Guide 1986 Scan PDF
    MTP4N08 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    MTP4N08 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MTP4N08 Unknown FET Data Book Scan PDF
    MTP4N08 National Semiconductor N-Channel Power MOSFETs Scan PDF
    MTP4N08E Unknown Shortform Datasheet & Cross References Data Short Form PDF
    MTP4N10 Fairchild Semiconductor (MTP4N08 / MTP4N10) N-Channel Power MOSFETs Scan PDF
    MTP4N10 Fairchild Semiconductor N-Channel Power MOSFETs, 5.5 A, 60-100V Scan PDF

    MTP4N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN569

    Abstract: MTP4N80E MTP4N80
    Text: MOTOROLA Order this document by MTP4N80E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP4N80E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 4.0 AMPERES 800 VOLTS


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    PDF MTP4N80E/D MTP4N80E MTP4N80E/D* AN569 MTP4N80E MTP4N80

    Untitled

    Abstract: No abstract text available
    Text: Jziizu ^EtnL-Lonauctoi L/^ioaucti, Una. tX c/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MTP4N60 N-Channel Mosfet Transistor FEATURES • Drain Current -ID= 4A@ TC=25°C • Drain Source Voltage-


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    PDF MTP4N60 O-220C

    2N3904

    Abstract: AN569 MTP4N50E
    Text: MOTOROLA Order this document by MTP4N50E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET Designer's MTP4N50E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 4.0 AMPERES 500 VOLTS RDS on = 1.5 OHMS


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    PDF MTP4N50E/D MTP4N50E MTP4N50E/D* 2N3904 AN569 MTP4N50E

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTP4N80E CASE OUTLINE: TO-220AB HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:


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    PDF MTP4N80E O-220AB

    mosfet 40a 200v

    Abstract: MTP4N
    Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTP4N40E CASE OUTLINE: TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:


    Original
    PDF O-220 MTP4N40E mosfet 40a 200v MTP4N

    mtp4n35

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: MTP4N35 TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:


    Original
    PDF O-220 MTP4N35 mtp4n35

    mtp4n50

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: MTP4N50 TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:


    Original
    PDF O-220 MTP4N50 mtp4n50

    mtp4n45

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: MTP4N45 TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:


    Original
    PDF O-220 MTP4N45 mtp4n45

    mtp4n40

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: MTP4N40 TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:


    Original
    PDF O-220 MTP4N40 mtp4n40

    AN569

    Abstract: MTP4N80E
    Text: MOTOROLA Order this document by MTP4N80E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TMOS E−FET. Power Field Effect Transistor MTP4N80E Motorola Preferred Device N−Channel Enhancement−Mode Silicon Gate TMOS POWER FET 4.0 AMPERES 800 VOLTS


    Original
    PDF MTP4N80E/D MTP4N80E MTP4N80E/D* AN569 MTP4N80E

    Untitled

    Abstract: No abstract text available
    Text: 10aucti, Dnc. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Designer's Data Sheet TMOS E-FET ™ MTP4N80E Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination


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    PDF 10aucti, MTP4N80E

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: MTP4N85 TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:


    Original
    PDF MTP4N85 O-220

    AN569

    Abstract: MTP4N40E
    Text: MOTOROLA Order this document by MTP4N40E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP4N40E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination


    Original
    PDF MTP4N40E/D MTP4N40E MTP4N40E/D* AN569 MTP4N40E

    MTP4N50E

    Abstract: No abstract text available
    Text: MTP4N50E Designer’s Data Sheet TMOS E−FET.™ High Energy Power FET N−Channel Enhancement−Mode Silicon Gate This advanced high voltage TMOS E−FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain−to−source diode with fast


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    PDF MTP4N50E MTP4N50E/D

    7BFL

    Abstract: No abstract text available
    Text: M O TO RO LA SC X ST RS /R F bSE D b 3 b ? 2 5 4 ODTflbbH DIE • MOTb MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA MTP4N08E Designer's Data Sheet Motorola Preferred Device P o w e r Field E ffe c t T ra n sisto r N -C h ann el E n h an cem en t-M od e S ilic o n G ate


    OCR Scan
    PDF MTP4N08E 21A-06 O-220AB) Y145M 221D-02 O-220 Y145M, AND-02 314B03 O-220) 7BFL

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTP4N40E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP4N40E TMOS E-FET™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination


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    PDF MTP4N40E/D TP4N40E 21A-06 O-220AB)

    1RF710

    Abstract: No abstract text available
    Text: N-Channel Power MOSFETs IRF510 IRF512 IRF513 MTP4N08 MTP4N10 IRF612 MTP2N18 MTP2N20 IRF711 •d nC Qfl Max C|M (pF) M in Max Co m (PF) Min Max 7.5 200 100 30 A1 2 7.5 200 100 30 A1 0.8 2 7.5 200 100 30 A1 0.25 0.8 2 7.5 200 100 30 4.5 1 0.8 2 7.5 200 100


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    PDF IRF510 IRF511 IRF512 IRF513 MTP4N08 MTP4N10 IRF610 IRF611 IRF612 IRF613 1RF710

    IRF510

    Abstract: Gate Drive circuit for irf510 Fairchild Semiconductor DS-513 MTP4N10 IRF-510 DD57 IRF510-513 IRF511 IRF512 IRF513
    Text: 3469674 FAIRCHILD SEMICONDUCTOR D iT l 3 4 1 ^ 7 4 DGH7TB4_fl IRF510-513 MTP4N08/4N10 T 3 9 // N-Channel Power MOSFETs, 5.5 A, 60-100 V FA IR C H ILD A Schlumberger Company Power And Discrete Division Description These devices are n-channel, enhancement mode, power


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    PDF IRF510-513 MTP4N08/4N10 O-220AB IRF510 IRF511 IRF512 IRF513 MTP4N08 MTP4N10 IRF510-513 IRF510 Gate Drive circuit for irf510 Fairchild Semiconductor DS-513 MTP4N10 IRF-510 DD57 IRF511 IRF512 IRF513

    GG88

    Abstract: T3901
    Text: This N-Channel Power MOSFETs IRF510 By IRF512 Its IRF513 MTP4N10 IRF610 IRF612 MTP2N18 MTP2N20 IRF711 C rw Max PR Min Max (PR Min Max 7.5 200 100 30 A1 2 7.5 200 100 30 A1 0.8 2 7.5 200 100 30 A1 0.25 0.8 2 7.5 200 100 30 f1 4.5 1 0.8 2 7.5 200 100 30 A1


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    PDF D03711B gg8888Ã T-39-01 GG88 T3901

    TP4N50

    Abstract: TP4N45 POWER MOSFET 4n45 k 3436 ic k 3436 transistor
    Text: t MOTOROLA SC 14E 0 I X ST RS/R F b 3 b ?E S4 OOfllTlfl 3 | T -Z T -f! MOTOROLA H SEM IC O N D U C T O R TECHNICAL DATA M TM 4N45 M TM 4N50 MTP4N45 MTP4N50 Designer's Data Sheet Pow er Field Effect Transistor N-Channel Enhancem ent-Mode Silicon Gate T M O S


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    PDF MTP4N45 MTP4N50 MTM/MTP4N45 TP4N50 TP4N45 POWER MOSFET 4n45 k 3436 ic k 3436 transistor

    mtp4n08

    Abstract: No abstract text available
    Text: MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA MTP4N08 Designer's Data Sheet P o w e r Field E ffe ct T ra n sisto r N -Ch ann el Enhancem ent-M ode S ilic o n G ate T M O S TMOS POWER FET 4 AMPERES rDS on = 0-8 OHM 80 VOLTS This TM O S Power FET is designed fo r m e d iu m vo ltag e , high


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    PDF MTP4N08 mtp4n08

    irf630 irf640

    Abstract: MTP8N18 MTP4N18 MTP4N20 MOTOROLA IRF630 MTP5n18 MTP8N20 IRF710 IRF712 IRF720
    Text: POWER TRANSISTORS — TMOS PLASTIC continued Plastic TMOS Power MOSFETs — TO-220AB (continued) CASE 221A-02 (Ohms) Max (Amp) 400 5 0.8 1 Device IRF712 1.3 20 2 50 1.5 20 MTP2N40 3.6 0.8 IRF710 3.3 1.5 MTP3N40 2.5 1.8 1.5 75 IRF722 2.5 40 IRF720 3 MTP4N40


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    PDF T0-220AB 21A-02 IRF712 MTP2N40 IRF710 MTP3N40 IRF722 IRF720 MTP4N40 IRF732 irf630 irf640 MTP8N18 MTP4N18 MTP4N20 MOTOROLA IRF630 MTP5n18 MTP8N20

    5N05

    Abstract: 5n06 MTP5N05 MTP5N06 MTP4N08 MTP4N10 5n0506
    Text: <8> MTP4N08, MTP5N05 MTP4N10, MTP5N06 MOTOROLA D e s i g n e r ’s D a t a S h e e t 4.0 and 5.0 AMPERE N-CHANNEL TMOS POWER FET N -C H A N N E L ENHANCEM ENT M ODE SILICON GATE TM O S POWER FIELD EFFECT TRANSISTO R rDS on = 0-8 OHM 80 and 100 VOLTS These TMOS Power FETs are designed for low voltage, high


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    PDF MTP4N08, MTP5N05 MTP4N10, MTP5N06 5N05 5n06 MTP5N06 MTP4N08 MTP4N10 5n0506

    MTP3N80

    Abstract: mtp4n50e MTP3N95 MTP4N05L MTP4N06L MTP4N08 MTP4N40E MTP4N45 MTP4N50 P180
    Text: - M £ tt ± f £ t Vd s or € Vg s Vd g % V M (Ta:=25°C) * /CH * /CH (A) m (V) MTP3N80 MOT N 800 ±20 MTP3N95 MOT N 950 ±20 MTP3P25 MOT P MTP4N05L MOT MTP4N06L MOT MTP4N08 MOT MTP4N10 MOT MTP4N40E MOT MTP4N45 MOT N Ig s s Pd Id (nA) Vg s (V) < M A) Vd s


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    PDF MTP3N80 O-220AB MTP3N95 MTP3P26 T0-220AB MTP4N05L MTP5P18 mtp4n50e MTP4N06L MTP4N08 MTP4N40E MTP4N45 MTP4N50 P180