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    MTD6N15 Price and Stock

    onsemi MTD6N15T4

    MOSFET N-CH 150V 6A DPAK
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    MTD6N15T4 995
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    onsemi MTD6N15T4G

    MOSFET N-CH 150V 6A DPAK
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    Newark MTD6N15T4G Cut Tape 2,500
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    Quest Components MTD6N15T4G 1,691
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    MTD6N15T4G 800
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    Win Source Electronics MTD6N15T4G 46,900
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    onsemi MTD6N15T4GV

    MOSFET N-CH 150V 6A DPAK
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    Motorola Semiconductor Products MTD6N15T4

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    Bristol Electronics MTD6N15T4 2,300
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    MTD6N15T4 1,312
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    MTD6N15T4 104
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    Motorola Semiconductor MTD6N15T4

    6 A, 150 V, 0.3 OHM, N-CHANNEL, SI, POWER, MOSFET
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    Quest Components MTD6N15T4 112
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    MTD6N15 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MTD6N15 On Semiconductor MTD6N15 - TRANSISTOR 6 A, 150 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, CASE 369C-01, DPAK-3, FET General Purpose Power Original PDF
    MTD6N15 On Semiconductor Power Field Effect Transistor DPAK for Surface Mount Original PDF
    MTD6N15 On Semiconductor Power MOSFET 150 V, 6A, Single N-Channel DPAK Original PDF
    MTD6N15 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    MTD6N15 Motorola Switchmode Datasheet Scan PDF
    MTD6N15 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MTD6N15 Unknown FET Data Book Scan PDF
    MTD6N15 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    MTD6N151 On Semiconductor MTD6N15 - TRANSISTOR 6 A, 150 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369D-01, DPAK-3, FET General Purpose Power Original PDF
    MTD6N15-1 On Semiconductor MTD6N15 - TRANSISTOR 6 A, 150 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369D-01, DPAK-3, FET General Purpose Power Original PDF
    MTD6N15-1 On Semiconductor Power Field Effect Transistor DPAK for Surface Mount Original PDF
    MTD6N15-1 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    MTD6N15/D On Semiconductor TMOS POWER FET 6.0 AMPERES 150 VOLTS Original PDF
    MTD6N15-D On Semiconductor Power Field Effect Transistor DPAK for Surface Mou Original PDF
    MTD6N15T4 On Semiconductor TMOS Power 150V .3R Original PDF
    MTD6N15T4 On Semiconductor Power MOSFET 150 V, 6 A, N-Channel DPAK; Package: DPAK 4 LEAD Single Gauge Surface Mount; No of Pins: 4; Container: Tape and Reel; Qty per Container: 2500 Original PDF
    MTD6N15T4G On Semiconductor TMOS Power 150V .3R Original PDF
    MTD6N15T4G On Semiconductor Power MOSFET 150 V, 6 A, N-Channel DPAK; Package: DPAK 4 LEAD Single Gauge Surface Mount; No of Pins: 4; Container: Tape and Reel; Qty per Container: 2500 Original PDF
    MTD6N15T4GV ON Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 5A DPAK Original PDF

    MTD6N15 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A1275

    Abstract: 6N15 369D AN569 MTD6N15 MTD6N15T4
    Text: MTD6N15 Power Field Effect Transistor DPAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate This TMOS Power FET is designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers.


    Original     		PDF MTD6N15 MTD6N15/D A1275 6N15 369D AN569 MTD6N15 MTD6N15T4

    6N15

    Abstract: motorola transistor dpak marking d marking code dpak transistor 369D AN569 MTD6N15 MTD6N15T4 002 545 18 05
    Text: MTD6N15 Power Field Effect Transistor DPAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate This TMOS Power FET is designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers.


    Original     		PDF MTD6N15 MTD6N15/D 6N15 motorola transistor dpak marking d marking code dpak transistor 369D AN569 MTD6N15 MTD6N15T4 002 545 18 05

    AN569

    Abstract: MTD6N15 SMD310 mosfet transistor 800 volts.200 amperes
    Text: MOTOROLA Order this document by MTD6N15/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MTD6N15 Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 6.0 AMPERES 150 VOLTS RDS on = 0.3 OHM


    Original     		PDF MTD6N15/D MTD6N15 MTD6N15/D* TransistorMTD6N15/D AN569 MTD6N15 SMD310 mosfet transistor 800 volts.200 amperes

    Untitled

    Abstract: No abstract text available
    Text: MTD6N15: Power Field Effect Transistor DPAK for Surface Mount Features • Silicon gate for fast switching speeds • Low RDS on — 0.3 Ω Max • Rugged — SOA is power dissipation limited • Source−to−drain diode characterized for use with inductive loads


    Original     		PDF MTD6N15: MTD6N15T4 MTD6N15-1 MTD6N15

    6n15g

    Abstract: No abstract text available
    Text: MTD6N15 Power Field Effect Transistor DPAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate This Power FET is designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers.


    Original     		PDF MTD6N15 MTD6N15/D 6n15g

    6n15g

    Abstract: 6N15 T6N15G AN569 MTD6N15 MTD6N15T4 MTD6N15T4G dpak code
    Text: MTD6N15 Power Field Effect Transistor DPAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate This TMOS Power FET is designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers.


    Original     		PDF MTD6N15 MTD6N15/D 6n15g 6N15 T6N15G AN569 MTD6N15 MTD6N15T4 MTD6N15T4G dpak code

    LM5112MY

    Abstract: LM5112
    Text: LM5112 LM5112 Tiny 7A MOSFET Gate Driver Literature Number: SNVS234B LM5112 Tiny 7A MOSFET Gate Driver General Description Features The LM5112 MOSFET gate driver provides high peak gate drive current in the tiny LLP-6 package SOT23 equivalent footprint or an 8-Lead exposed-pad MSOP package, with


    Original     		PDF LM5112 LM5112 SNVS234B LM5112MY

    Untitled

    Abstract: No abstract text available
    Text: LM5111 LM5111 Dual 5A Compound Gate Driver Literature Number: SNVS300F LM5111 Dual 5A Compound Gate Driver General Description The LM5111 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each “compound” output driver stage includes MOS and bipolar transistors operating in parallel that together sink more


    Original     		PDF LM5111 LM5111 SNVS300F

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


    Original     		PDF SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N

    mosfet schematic solenoid driver

    Abstract: LM5111-1MY LM5111 LM5111-1M LM5111-1MX LM5111-1MYX LM5111-2M LM5111-2MX LM5111-3M LM5111-3MX
    Text: LM5111 Dual 5A Compound Gate Driver General Description The LM5111 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each “compound” output driver stage includes MOS and bipolar transistors operating in parallel that together sink


    Original     		PDF LM5111 LM5111 CSP-9-111S2) CSP-9-111S2. mosfet schematic solenoid driver LM5111-1MY LM5111-1M LM5111-1MX LM5111-1MYX LM5111-2M LM5111-2MX LM5111-3M LM5111-3MX

    chopper transformer winding for 24v battery charging

    Abstract: hp laptop charging CIRCUIT diagram p50n05 43a Hall effect pin out 2N2219 transistor substitute PURE SINE WAVE inverter schematic diagram 2n3906 npn magnetic amplifier saturable core P50N05E pe-61592
    Text: Application Note 29 October 1988 Some Thoughts on DC/DC Converters Jim Williams and Brian Huffman INTRODUCTION Many systems require that the primary source of DC power be converted to other voltages. Battery driven circuitry is an obvious candidate. The 6V or 12V cell in a laptop computer must be converted to different potentials needed for


    Original     		PDF 1500pF CTX300-4 B-07T CTX33-4 D45C1 CTX-02-13949-X1 21-110J LT1533 an29f AN29-46 chopper transformer winding for 24v battery charging hp laptop charging CIRCUIT diagram p50n05 43a Hall effect pin out 2N2219 transistor substitute PURE SINE WAVE inverter schematic diagram 2n3906 npn magnetic amplifier saturable core P50N05E pe-61592

    LM5112MY

    Abstract: LM5112 LM5112MYX LM5112SD LM5112SDX MTD6N15 Q100 SDE06A LM5112 equivalent IC MOSFET QG 6 PIN
    Text: LM5112 Tiny 7A MOSFET Gate Driver General Description Features The LM5112 MOSFET gate driver provides high peak gate drive current in the tiny LLP-6 package SOT23 equivalent footprint or an 8-Lead exposed-pad MSOP package, with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS


    Original     		PDF LM5112 LM5112 CSP-9-111S2) CSP-9-111S2. LM5112MY LM5112MYX LM5112SD LM5112SDX MTD6N15 Q100 SDE06A LM5112 equivalent IC MOSFET QG 6 PIN

    MTD6N15

    Abstract: leakage inductor
    Text: Transformers CST114 Series For Viewfinder Flat Lamp Operation SMD FEATURES • Employing a low inductance leakage design, the CST114 transformer achieves a luminance efficiency improvement of 10 percent TDK’s comparison . • The winding terminations and soldering terminals are physically


    Original     		PDF CST114 CST114 100kHz, 12300cd/m2 MTD6N15 leakage inductor

    an8411

    Abstract: flyback transformer for Lt1308 an8499 12v battery charger lm317 automatic notebook Universal LCD inverter 12v-20v 6v battery charger lm317 automatic sot-23 fet smd code 12w LTC1373 universal laptop schematic power supply 19v circuit diagram schematic diagram 48V solar charge controller
    Text: Application Note 84 April 2000 Linear Technology Magazine Circuit Collection, Volume IV Power Products Richard Markell, Editor INTRODUCTION Application Note 84 is the fourth in a series that excerpts useful circuits from Linear Technology magazine to preserve them for posterity. This application note highlights


    Original     		PDF LTC1623, LT1339 AN84-159 AN84-160 an84f an8411 flyback transformer for Lt1308 an8499 12v battery charger lm317 automatic notebook Universal LCD inverter 12v-20v 6v battery charger lm317 automatic sot-23 fet smd code 12w LTC1373 universal laptop schematic power supply 19v circuit diagram schematic diagram 48V solar charge controller

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original     		PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    mgb20n40cl

    Abstract: MGB20N40 MGB20N35CL MTD1N60E1 motorola automotive transistor coil ignition MTSF3N03HD MGW12N120 Motorola Master Selection Guide MTD20N06HD MTD20N06V
    Text: TMOS Power MOSFETs Products In Brief . . . Motorola continues to build a world class portfolio of TMOS Power MOSFETs with new advances in silicon and packaging technology. The following new advances have been made in the area of silicon technology. • New high voltage devices with voltages up to


    Original     		PDF smalles40F MGP5N60E MGP20N60 MGW20N60D MGW30N60 MGY30N60D MGY40N60 MGY40N60D MGW12N120 MGW12N120D mgb20n40cl MGB20N40 MGB20N35CL MTD1N60E1 motorola automotive transistor coil ignition MTSF3N03HD MGW12N120 Motorola Master Selection Guide MTD20N06HD MTD20N06V

    LM5110 solenoid

    Abstract: LM5110 LM5110-1M LM5110-1SD LM5110-2M LM5110-3M M08A
    Text: LM5110 Dual 5A Compound Gate Driver with Negative Output Voltage Capability General Description The LM5110 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each “compound” output driver stage includes MOS


    Original     		PDF LM5110 LM5110 LM5110 solenoid LM5110-1M LM5110-1SD LM5110-2M LM5110-3M M08A

    mps2112

    Abstract: UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp
    Text: SG388/D Rev. 4, May-2002 Master Components Selector Guide Master Components Selector Guide ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular


    Original     		PDF SG388/D May-2002 r14525 SG388 mps2112 UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp

    CS5170

    Abstract: mps2112 MPS2112ZL1 100A 300V IGBT MC3346P CS4124YDW16 ON Semiconductor PRICE BOOK 12V to 220V smps inverter bd234 igbt ac motor speed control
    Text: SGD501/D REV 8, January 5, 2002 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section EFFECTIVE DATE: JANUARY 5, 2002 General Information Elimination Of Ozone Depleting Chemicals . . . .


    Original     		PDF SGD501/D Janua667 CS5170 mps2112 MPS2112ZL1 100A 300V IGBT MC3346P CS4124YDW16 ON Semiconductor PRICE BOOK 12V to 220V smps inverter bd234 igbt ac motor speed control

    X 25 UMI 2.5A 150

    Abstract: N and P MOSFET
    Text: b ÔE T> MOTOROLA SC XSTRS/R F • b3b?E54 OOSflSlT llfl ■ MOTb MOTOROLA mm SEMICONDUCTOR TECHNICAL DATA MTD6N15 Designer's Data Sheet P o w er Field E ffe c t T ransistor N-Channel Enhancement-Mode Silicon Gate DPAK for Surface Mount or Insertion Mount


    OCR Scan     		PDF MTD6N15 b3b7254 X 25 UMI 2.5A 150 N and P MOSFET

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


    OCR Scan     		PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845

    MFE9200

    Abstract: BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E
    Text: MOTOROLA SC XSTRS/R IM E F D | b3b?254 O O fl'ìB n 1 | Selection by Package by contacting a Motorola sale office In your area or by con­ tacting a Motorola Literature Distribution Center listed on the back cover. Order the disk by requesting DK101/D. The product listed in Tables t through 22 have been com­


    OCR Scan     		PDF DK101/D. O-22QI 0020-H MFE9200 BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E

    MJDI22

    Abstract: No abstract text available
    Text: DPAK DEVICES continued Bipolar Power Transistors Device NPN PNP MJD340 MJD47 MJD350 MJD31 MJD31C MJD148 MJD6O39 W MJD243 MJD200 MJD41C MJD44H11 MJDI22 W MJD30S5 MJD44E3 (1) VCEO(sus) Volts Min Min/Max Am ps 0.5 300 250 350 400 400 100 40 100 45 80 100 25


    OCR Scan     		PDF MJD340 MJD47 MJD50 MJD13003 MJD350 MJD5731 1k/12k MJD31 MJD31C MJDI22

    TB20N20E

    Abstract: MTP30N08M MTD5N08L MTD1N50 MTP40N06M TB20N20 MTP10N10M
    Text: G CASE 314B-02 5 PIN TO-220 S DRAIN CASE 418B-01 o TMOS SENSEFETs D2PAK* SE N S E FE Ts are con ven tion al pow er M O SFETs w ith an option provided to sen se the drain current by m ea surin g a sm all proportion of the total drain Table 11 — Case 418B-01


    OCR Scan     		PDF 314B-02 O-220) 418B-01 MTB8N50E TB10N40E TB20N20E TB33N10E TB15N06E TB30N06EL MTP30N08M MTD5N08L MTD1N50 MTP40N06M TB20N20 MTP10N10M