BIOS 32 Pin PLCC
Abstract: DIP14 footprint JS29 EPM7032LCC44 aui isolation transformer diode js7 C3310 push button switch 2 pin BLM11P300S DRAM
Text: FEATURES: • Switched Ethernet Evaluation Board using one Galileo GT-48001A Switched Ethernet Controller • Provides switching between 8 10/20 Mbps Ethernet ports • Flexible uses - Standalone mode - Plug into PCI slot in a PC • 33MHz PCI Rev. 2.1 interface
|
Original
|
PDF
|
GT-48001A
33MHz
10base-T
BIOS 32 Pin PLCC
DIP14 footprint
JS29
EPM7032LCC44
aui isolation transformer
diode js7
C3310
push button switch 2 pin
BLM11P300S
DRAM
|
Untitled
Abstract: No abstract text available
Text: 256K x 16 EDO DRAM TECHNOLOGY, INC. MT4C16270 DRAM FEATURES • Industry-standard x16 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply* • All inputs, outputs and clocks are TTL-compatible
|
Original
|
PDF
|
MT4C16270
512-cycle
40-Pin
MT4C16270DJ-4
|
RD2 TP10
Abstract: L6244 J311 PDI 40 JS29 EPM7032 JS37 4.7k j33 TXD RXD R105
Text: A B C DData[31:0] DData[31:0] DAddr[8:0] DAddr[8:0] DAddr[8:0] RAS~[1:0] WE~ CAS~ ChipSel~ RAS~[1:0] WE~ CAS~ ChipSel~ RAS~[1:0] WE~ CAS~ ChipSel~ DData[31:0] 4 Int~ Req~ Serr~ IdSel DevSel~ Stop~ Par Perr~ Frame~ IRdy~ TRdy~ Gnt~ PCI CBE~[3:0] PRst~ PciClk
|
Original
|
PDF
|
GT48001A
33MClk
B33MClk
74FCT244
33MHz
80MHz
RD2 TP10
L6244
J311
PDI 40
JS29
EPM7032
JS37
4.7k j33
TXD RXD
R105
|
MT4C16270DJ-5
Abstract: MT4C16270
Text: MT4C16270 256K x 16 DRAM TECHNOLOGY, INC. DRAM 256K x 16 DRAM 5V, EDO PAGE MODE FEATURES • Industry-standard x16 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply* • Low power, 3mW standby; 300mW active, typical
|
Original
|
PDF
|
MT4C16270
300mW
512-cycle
40-Pin
MT4C16270DJ-5
MT4C16270
|
MT4C16270
Abstract: MT4C16270DJ-4
Text: OBSOLETE 256K x 16 EDO DRAM MT4C16270 DRAM For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • Industry-standard x16 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process
|
Original
|
PDF
|
MT4C16270
512-cycle
40-Pin
MT4C16270
MT4C16270DJ-4
|
MT4C16270DJ-4
Abstract: MT4C16270
Text: MT4C16270 256K x 16 DRAM TECHNOLOGY, INC. DRAM 256K x 16 DRAM 5V, EDO PAGE MODE FEATURES • Industry-standard x16 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply* • Low power, 3mW standby; 300mW active, typical
|
Original
|
PDF
|
MT4C16270
300mW
512-cycle
40-Pin
MT4C16270DJ-4
MT4C16270
|
CON20X2
Abstract: PROCOMM PLUS amd processor based Circuit Diagram appa A17 MT4C16270DJ-5 7705a notes on serial communication MAX232 led programming AM29F400 AMD S1 Pinout HLMP-7000
Text: frtbook : about Page vii Monday, June 2, 1997 11:53 AM About the SD186ED Demonstration Board The AMD SD186ED Demonstration Board was designed as an exceptionally small, low-cost product for demonstration of the AMD Am186 ED microcontroller. See page ix for a block diagram of the board.
|
Original
|
PDF
|
SD186ED
SD186ED
Am186TMED
Am186ED
16-bit
RS-232
CON20X2
PROCOMM PLUS
amd processor based Circuit Diagram
appa A17
MT4C16270DJ-5
7705a
notes on serial communication MAX232 led
programming AM29F400
AMD S1 Pinout
HLMP-7000
|
Untitled
Abstract: No abstract text available
Text: 256K x 16 EDO DRAM MT4C16270 DRAM For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • Industry-standard x16 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process
|
Original
|
PDF
|
512-cycle
MT4C16270
40-Pin
|
MT4D51232M-XX
Abstract: No abstract text available
Text: 256K, 512K x 32 DRAM SIMMs TECHNOLOGY, INC. MT2D25632 X MT4D51232(X) DRAM MODULE FEATURES PIN ASSIGNMENT (Front View) • JEDEC- and industry-standard pinout in a 72-pin single in-line memory module (SIMM) • 1MB (256K x 32) and 2MB (512K x 32) • High-performance CMOS silicon-gate process
|
Original
|
PDF
|
MT2D25632
MT4D51232
72-pin
512-cycle
MT4D51232M-XX
|
header 30X2
Abstract: JS29 EPM7032LC44-10 FB j33 JS15 JS16 JS17 AD10 AD11 AD12
Text: 1 MISC PCI MDC_IN MDC_OUT Rst Rst~ Clk33Out Req~ Gnt~ Perr~ Serr~ IdSel DevSel~ Stop~ Frame~ Par TRdy~ IRdy~ C/Be~[3:0] AD[31:0] Int~ A A Led_Clk Led_Data Led_Stb Mac0Led[5:0] Mac1Led[5:0] Clk33In RstIn~ 2 3 4 Pci_Clk Pci_Rst~ Led_Clk Led_Data Led_Stb Mac0Led[5:0]
|
Original
|
PDF
|
Clk33Out
Clk33In
GT48002A
TXD11
TXD13
RXD11
RXD13
TXD00
TXD01
TXD02
header 30X2
JS29
EPM7032LC44-10
FB j33
JS15
JS16
JS17
AD10
AD11
AD12
|
QL8X12B-XPL68C
Abstract: 80c96 1X3HDR PT3868 C458 R486 r946 MODJACK MT4C16270DJ-6 CR69
Text: A SWITCHED ETHERNET REFERENCE DESIGN SCHEMATICS Switched Ethernet Reference Design Description Order Number: 272907-001 July, 1996 Appendix A: Switched Ethernet Reference Design Schematics Index to Reference Design Schematics Circuit Sheets +3.3V Supply for Processor .3
|
Original
|
PDF
|
AM85C30)
QL8X12B-XPL68C
80c96
1X3HDR
PT3868
C458
R486
r946
MODJACK
MT4C16270DJ-6
CR69
|
RAS 2415
Abstract: TC514265DJ mt4c16257dj TC514265DFT60 TMS44165DZ TMS45165DZ TC514265DFT-50 TC514260DFT70 HM514260 TC514260DJ
Text: E86 Family Bulletin DRAM Controller Specifications and Vendor Compatibility Introduction The Am186ED has a super set of the Am186ES features, including an integrated DRAM controller. This integration reduces overall system cost. The Am186ED is designed to be used with 4 Meg 256K x 16
|
Original
|
PDF
|
Am186ED
Am186ES
256Kx16
TC514265DJS
TC514265DFTS
TC514265DJ
RAS 2415
TC514265DJ
mt4c16257dj
TC514265DFT60
TMS44165DZ
TMS45165DZ
TC514265DFT-50
TC514260DFT70
HM514260
TC514260DJ
|
mt4c16257dj
Abstract: TC514265DJ TMS45165DZ TC514265DJS TC514265DFTS MT4C16270DJ TMS45160DZ TC514260DJ
Text: vendors Vendor Name HITACHI HITACHI HITACHI HITACHI HITACHI HITACHI MICRON MICRON MICRON MICRON MICRON MOSEL VITELIC MOSEL VITELIC Part No. HM514260AJ HM51S4260AJ HM514260AZ HM51S4260AZ HM514260ATT HM51S4260ATT HM514260CJ HM514260CZ HM514260CTT HM514260CLZ
|
Original
|
PDF
|
HM514260AJ
HM51S4260AJ
HM514260AZ
HM51S4260AZ
HM514260ATT
HM51S4260ATT
HM514260CJ
HM514260CZ
HM514260CTT
HM514260CLZ
mt4c16257dj
TC514265DJ
TMS45165DZ
TC514265DJS
TC514265DFTS
MT4C16270DJ
TMS45160DZ
TC514260DJ
|
Untitled
Abstract: No abstract text available
Text: ED06DRAM TECHNOLOGY, INC. DRAM M T4C 16270 For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process
|
OCR Scan
|
PDF
|
ED06DRAM
512-cycle
40-Pin
|
|
|
MT4C16270DJ-7
Abstract: No abstract text available
Text: MICPON SFM JCONDUCTOR INC L.1E D • b 11 IS 4 e} DDDTìSB 2ST MflRN M IC R O N I MT4C16270 256K X 16 DRAM SEUiCOhOkJCTOH, INC. DRAM 256K x 16 DRAM EDO PAGE MODE FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process
|
OCR Scan
|
PDF
|
MT4C16270
512-cycle
MT4C16270DJ-7
|
MT4C16270DJ-7
Abstract: No abstract text available
Text: M IC R O N Mi MT4C16270 256Kx 16 DRAM TtoiMxasr. MC. DRAM 256K x 16 DRAM EDO PAGE MODE FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply* • Low power, 3m W standby; 375m W active, typical
|
OCR Scan
|
PDF
|
MT4C16270
256Kx
512-cycle
40-Pin
MT4C1027Q
MT4C16270DJ-7
|
Untitled
Abstract: No abstract text available
Text: MT4C16270 256K X 16 DRAM MICRON I TECHNOLOGY. INC. 256K x 16 DRAM DRAM 5V, EDO PAGE MODE FEATURES PIN ASSIGNMENT Top View • Industry-standard x l6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply*
|
OCR Scan
|
PDF
|
MT4C16270
300mW
512-cycle
40-Pin
|
Untitled
Abstract: No abstract text available
Text: 256K, 512K x 32 DRAM SIMMs MICRON • IbCHNULUÜY. INC MT2D25632 X MT4D51232(X) DRAM MODULE FEATURES PIN ASSIGNMENT (Front View) • JEDEC- and industry-standard pinout in a 72-pin single in-line memory module (SIMM) • 1MB (256K x 32) and 2MB (512K x 32)
|
OCR Scan
|
PDF
|
MT2D25632
MT4D51232
72-pin
512-cycle
|
Untitled
Abstract: No abstract text available
Text: ADVANCE MT4C16270/1 256K X 16 WIDE DRAM |U |IC = R O N WIDE DRAM 256K x 16 DRAM FEATURES PIN ASSIGNMENT Top View • Industry-standard xl6 pinouts, tim ing, functions and packages • H igh-perform ance CMOS silicon-gate process • Single +5V ±10% pow er supply
|
OCR Scan
|
PDF
|
MT4C16270/1
500mW
512-cycle
MT4C16271
40-Pin
|
Untitled
Abstract: No abstract text available
Text: 2 5 6 K X 16 EDO DRAM |uiic: r o n MT4C16270 DRAM FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply* • All inputs, outputs and clocks are TTL-compatible
|
OCR Scan
|
PDF
|
MT4C16270
512-cycle
|
Untitled
Abstract: No abstract text available
Text: MT4C16270 256K x 16 DRAM MICRON I TECHNOLOGY, NIC. DRAM 256K x 16 DRAM 5V, EDO PAGE MODE FEATURES • Industry-standard xl6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply* • Low power, 3mW standby; 300mW active, typical
|
OCR Scan
|
PDF
|
MT4C16270
300mW
512-cycle
MT4C16270D
|
Untitled
Abstract: No abstract text available
Text: ADVANCE WIDE DRAM 256K x 16 DRAM FAST-PAGE-MODE WITH EXTENDED DATA-OUT FEATURES PIN ASSIGNMENT Top View • Industry-standard x l6 pinouts, timing, functions and packages • High-perform ance CM O S silicon-gate process • Single +5V ±10% power supply
|
OCR Scan
|
PDF
|
512-cycle
MT4C16271
40-Pin
MT4C16270/1
|
Untitled
Abstract: No abstract text available
Text: ADVANCE l^ iic n o N 256K WIDE DRAM X MT4C16270/1 16 WIDE DRAM 256K x 16 DRAM FEATURES • Industry-standard xl6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply • Low power, 3mW standby; 500mW active, typical
|
OCR Scan
|
PDF
|
MT4C16270/1
500mW
512-cycle
MT4C16271
40-Pin
|
Untitled
Abstract: No abstract text available
Text: |U |IC R O N MT4C16270 256KX 16 DRAM 2 5 6 K x 16 DRAM DRAM 5V, EDO PAGE MODE • Industry-standard x l6 pinouts, tim ing, functions and packages • High-performance CM O S silicon-gate process • Single +5V +10% pow er supply* • Low power, 3m W standby; 300m W active, typical
|
OCR Scan
|
PDF
|
MT4C16270
256KX
512-cycle
40-Pin
t2/95
00133m
|
