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    MT49H Price and Stock

    Micron Technology Inc MT49H16M36SJ-18:B

    IC DRAM 576MBIT PARALLEL 144FBGA
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    DigiKey MT49H16M36SJ-18:B Tray 1,116 1
    • 1 $49.8
    • 10 $44.35
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    Avnet Americas MT49H16M36SJ-18:B Tray 12 Weeks 1,120
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    Mouser Electronics MT49H16M36SJ-18:B 1,224
    • 1 $49.45
    • 10 $44.35
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    Verical MT49H16M36SJ-18:B 1,060 1
    • 1 $48.89
    • 10 $48.03
    • 100 $45.52
    • 1000 $45.1
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    Arrow Electronics MT49H16M36SJ-18:B 1,060 20 Weeks 1
    • 1 $48.89
    • 10 $48.03
    • 100 $45.52
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    Newark MT49H16M36SJ-18:B Bulk 1,120
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    Avnet Asia MT49H16M36SJ-18:B 12 Weeks 2,000
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    Avnet Silica MT49H16M36SJ-18:B 13 Weeks 1,120
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    Micron Technology Inc MT49H8M36BM-5:B

    IC DRAM 288MBIT PARALLEL 144UBGA
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    Micron Technology Inc MT49H8M36FM-5-TR

    IC DRAM 288MBIT PARALLEL 144UBGA
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    Micron Technology Inc MT49H8M36BM-33-TR

    IC DRAM 288MBIT PARALLEL 144UBGA
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    DigiKey MT49H8M36BM-33-TR Reel
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    Micron Technology Inc MT49H16M36BM-25:B

    IC DRAM 576MBIT PARALLEL 144UBGA
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    Bristol Electronics MT49H16M36BM-25:B 30
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    Quest Components MT49H16M36BM-25:B 52
    • 1 $89.6
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    • 100 $71.68
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    MT49H16M36BM-25:B 24
    • 1 $60
    • 10 $54
    • 100 $51
    • 1000 $51
    • 10000 $51
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    Find more MT49H price and stock on Findchips.com

    MT49H Datasheets (317)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MT49H16M16 Micron REDUCED LATENCY DRAM RLDRAM Original PDF
    MT49H16M16FM Micron REDUCED LATENCY DRAM RLDRAM Original PDF
    MT49H16M16FM-33 Micron 256Mb RLDRAM Component Original PDF
    MT49H16M16FM-33 Micron 1Meg x 32 x 8 banks, DRAM Original PDF
    MT49H16M16FM-4 Micron 1Meg x 32 x 8 banks, DRAM Original PDF
    MT49H16M16FM-4 Micron 256Mb RLDRAM Component Original PDF
    MT49H16M16FM-5 Micron 256Mb RLDRAM Component Original PDF
    MT49H16M16FM-5 Micron 1Meg x 32 x 8 banks, DRAM Original PDF
    MT49H16M16FM-5 Micron Technology Memory, Integrated Circuits (ICs), IC RLDRAM 256MBIT 5NS 144UBGA Original PDF
    MT49H16M16FM-5 TR Micron Technology Integrated Circuits (ICs) - Memory - IC DRAM 256M PARALLEL 144UBGA Original PDF
    MT49H16M16HT-33 Micron 256Mb RLDRAM Component Original PDF
    MT49H16M16HT-4 Micron 256Mb RLDRAM Component Original PDF
    MT49H16M16HT-5 Micron 256Mb RLDRAM Component Original PDF
    MT49H16M16HT-5 IT Micron 256Mb RLDRAM Component Original PDF
    MT49H16M16HU-33 Micron 256Mb RLDRAM Component Original PDF
    MT49H16M16HU-4 Micron 256Mb RLDRAM Component Original PDF
    MT49H16M16HU-5 Micron 256Mb RLDRAM Component Original PDF
    MT49H16M18 Micron 288Mb CIO Reduced Latency Original PDF
    MT49H16M18BM-18:B Micron Technology Memory, Integrated Circuits (ICs), IC RLDRAM 288MBIT 1.875NS UBGA Original PDF
    MT49H16M18BM-25 Micron 288Mb RLDRAM Component Original PDF
    ...

    MT49H Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MICRON BGA PART MARKING

    Abstract: No abstract text available
    Text: 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM 2 Features CIO RLDRAM 2 MT49H32M9 – 32 Meg x 9 x 8 Banks MT49H16M18 – 16 Meg x 18 x 8 Banks MT49H8M36 – 8 Meg x 36 x 8 Banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate


    Original     		PDF 288Mb: MT49H32M9 MT49H16M18 MT49H8M36 09005aef80a41b46/Source: 09005aef809f284b MICRON BGA PART MARKING

    MICRON diode 2u

    Abstract: 24256 WR1 marking code marking WB4 MARKING WB1 micron power resistor Micron DDR marking H12 43256 1/transistor BL P65 diode marking code 4n
    Text: ADVANCE‡ 256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM REDUCED LATENCY DRAM RLDRAM MT49H8M32 – 1 Meg x 32 x 8 banks MT49H16M16 – 2 Meg x 16 x 8 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/dramds FEATURES


    Original     		PDF 256Mb: MT49H8M32 MT49H16M16 144-Ball MT49H8M32 MICRON diode 2u 24256 WR1 marking code marking WB4 MARKING WB1 micron power resistor Micron DDR marking H12 43256 1/transistor BL P65 diode marking code 4n

    F37Z

    Abstract: X1800 hspice MT49H16M36 533401 MT49H16M36
    Text: Advance‡ 576Mb: x36, x18, x9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II Features 576Mb CIO RLDRAM II Memory MT49H16M36 MT49H32M18 MT49H64M9 Features Figure 1: • 533 MHz DDR operation 1,067 Mb/s/pin data rate • Organization – 16 Meg x 36, 32 Meg x 18, and 64 Meg x 9


    Original     		PDF 576Mb: 576Mb MT49H16M36 MT49H32M18 MT49H64M9 09005aef81fe35b2/Source: 09005aef81f83d49 MT49H F37Z X1800 hspice MT49H16M36 533401

    09005aef809f284b

    Abstract: No abstract text available
    Text: 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288MB CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9‡ Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization


    Original     		PDF 288MB 288Mb MT49H8M36 MT49H16M18 09005aef80a41b46/zip: 09005aef809f284b

    MT49H16M18C

    Abstract: No abstract text available
    Text: 16 Meg x 18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features 288Mb SIO Reduced Latency RLDRAM II MT49H16M18C For the latest data sheet, refer to Micron’s Web site: www.micron.com/rldram Features Figure 1: • 400 MHz DDR operation (800 Mb/s/pin data rate)


    Original     		PDF 288Mb MT49H16M18C 09005aef80a41b59/Source: 09005aef811ba111 MT49H8M18C MT49H16M18C

    MT49H32M18C

    Abstract: No abstract text available
    Text: 576Mb: x9, x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H32M18C – 32 Meg x 18 x 8 banks MT49H64M9C – 64 Meg x 9 x 8 banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate • 38.4 Gb/s peak bandwidth (x18 at 533 MHz clock


    Original     		PDF 576Mb: MT49H32M18C MT49H64M9C 09005aef80a41b59/Source: 09005aef811ba111 MT49H32M18C

    09005aef815b2df8

    Abstract: MT49H32M18C
    Text: 576Mb: x9, x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H32M18C – 32 Meg x 18 x 8 banks MT49H64M9C – 64 Meg x 9 x 8 banks Features Figure 1: • 533 MHz DDR operation 1.067 Gb/s/pin data rate • 19.2 Gb/s peak bandwidth (x18 at 533 MHz clock


    Original     		PDF 576Mb: MT49H32M18C MT49H64M9C 09005aef815b2df8/Source: 09005aef811ba111 09005aef815b2df8 MT49H32M18C

    MICRON BGA PART MARKING

    Abstract: NF 034 T6N 700 MT49H16M18
    Text: 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H32M9 – 32 Meg x 9 x 8 Banks MT49H16M18 – 16 Meg x 18 x 8 Banks MT49H8M36 – 8 Meg x 36 x 8 Banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate


    Original     		PDF 288Mb: MT49H32M9 MT49H16M18 MT49H8M36 09005aef80a41b46/Source: 09005aef809f284b MICRON BGA PART MARKING NF 034 T6N 700 MT49H16M18

    15READ

    Abstract: marking ba5 MT49H8M18C MT49H16M18C
    Text: 288Mb: 16 Meg x 18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features 288Mb SIO Reduced Latency RLDRAM II MT49H16M18C For the latest data sheet, refer to Micron’s Web site: www.micron.com/rldram Features Figure 1: • 400 MHz DDR operation (800 Mb/s/pin data rate)


    Original     		PDF 288Mb: 288Mb MT49H16M18C 09005aef80a41b59/Source: 09005aef811ba111 MT49H8M18C 15READ marking ba5 MT49H16M18C

    smd dk qk

    Abstract: SMD MARKING CODE ACY smd marking codes BA5 smd marking codes BA2 RLDRAM MT49H16M18C
    Text: ADVANCE‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization - 16 Meg x 18, 32 Meg x 9 Separate I/O


    Original     		PDF 288Mb 288Mb clo68-3900 MT49H16M18C smd dk qk SMD MARKING CODE ACY smd marking codes BA5 smd marking codes BA2 RLDRAM

    hspice MT49H16M36

    Abstract: MT49H16M36FM MT49H16M36 MT49H32M18FM
    Text: Advance‡ 576Mb: x36, x18, x9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II Features 576Mb CIO Reduced Latency RLDRAM II MT49H16M36 MT49H32M18 MT49H64M9 For the latest data sheet, refer to Micron’s Web site: www.micron.com/rldram Features Figure 1: • 533 MHz DDR operation (1,067 Mb/s/pin data rate)


    Original     		PDF 576Mb: 576Mb MT49H16M36 MT49H32M18 MT49H64M9 09005aef81fe35b2/Source: 09005aef81f83d49 hspice MT49H16M36 MT49H16M36FM MT49H32M18FM

    MT49H16M18C

    Abstract: No abstract text available
    Text: PRELIMINARY‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization • 16 Meg x 18, 32 Meg x 9 Separate I/O


    Original     		PDF 288Mb 288Mb MT49H8M18C MT49H16M18C

    smd diode schottky code marking 2U

    Abstract: smd wb3 smd diode marking codes 2U smd marking WB3 smd wb1 smd diode schottky code marking 2F smd diode wb1 marking 3U 3T 3C diode wb3 smd code SMD marking CODE 2U
    Text: ADVANCE‡ 256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM REDUCED LATENCY DRAM RLDRAM MT49H8M32 – 1 Meg x 32 x 8 banks MT49H16M16 – 2 Meg x 16 x 8 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/dramds FEATURES


    Original     		PDF 256Mb: MT49H8M32 MT49H16M16 144-Ball MT49H8M32 smd diode schottky code marking 2U smd wb3 smd diode marking codes 2U smd marking WB3 smd wb1 smd diode schottky code marking 2F smd diode wb1 marking 3U 3T 3C diode wb3 smd code SMD marking CODE 2U

    Untitled

    Abstract: No abstract text available
    Text: 256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM REDUCED LATENCY DRAM RLDRAM MT49H8M32 – 1 Meg x 32 x 8 Banks MT49H16M16 – 2 Meg x 16 x 8 Banks Features Figure 1: 144-Ball µFBGA • 256Mb • Organization 8 Meg x 32, 16 Meg x 16 in 8 banks


    Original     		PDF 256Mb: 256Mb 09005aef81121545/source: 09005aef810c0ffc 256Mbx16x32RLDRAM

    MICRON BGA PART MARKING

    Abstract: 195u MT49H16M36
    Text: 576Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H64M9 – 64 Meg x 9 x 8 Banks MT49H32M18 – 32 Meg x 18 x 8 Banks MT49H16M36 – 16 Meg x 36 x 8 Banks Features Figure 1: • 533 MHz DDR operation 1.067 Gb/s/pin data rate


    Original     		PDF 576Mb: MT49H64M9 MT49H32M18 MT49H16M36 09005aef80a41b46/Source: 09005aef809f284b MICRON BGA PART MARKING 195u MT49H16M36

    MT49H16M18C

    Abstract: No abstract text available
    Text: 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization • 16 Meg x 18, 32 Meg x 9 Separate I/O


    Original     		PDF 288Mb 288Mb 09005aef80a41b59/zip: 09005aef811ba111 MT49H8M18C MT49H16M18C

    RLDRAM

    Abstract: MT49H16M18C
    Text: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM 2 Features SIO RLDRAM 2 MT49H16M18C – 16 Meg x 18 x 8 banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate • 38.4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency) • Organization


    Original     		PDF 288Mb: MT49H16M18C 09005aef80a41b59/Source: 09005aef811ba111 2003Micron RLDRAM MT49H16M18C

    MICRON BGA PART MARKING

    Abstract: amd catalog MT49H32M18C
    Text: 576Mb: x9, x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM 2 Features SIO RLDRAM 2 MT49H32M18C – 32 Meg x 18 x 8 banks MT49H64M9C – 64 Meg x 9 x 8 banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate • 38.4 Gb/s peak bandwidth (x18 at 533 MHz clock


    Original     		PDF 576Mb: MT49H32M18C MT49H64M9C 09005aef80a41b59/Source: 09005aef811ba111 MICRON BGA PART MARKING amd catalog MT49H32M18C

    MT49H16M18

    Abstract: No abstract text available
    Text: 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288MB CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization


    Original     		PDF 288MB MT49H8M36 MT49H16M18 MT49H32M9 144-Ball 288Mb 09005aef80a41b46/zip: 09005aef809f284b MT49H8M36 MT49H16M18

    Untitled

    Abstract: No abstract text available
    Text: 256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM REDUCED LATENCY DRAM RLDRAM MT49H8M32 – 1 Meg x 32 x 8 Banks MT49H16M16 – 2 Meg x 16 x 8 Banks Features Figure 1: 144-Ball µFBGA • 256Mb • Organization 8 Meg x 32, 16 Meg x 16 in 8 banks


    Original     		PDF 256Mb: MT49H8M32 MT49H16M16 144-Ball 256Mb 09005aef81121545/source: 09005aef810c0ffc 256Mbx16x32RLDRAM

    smd transistor marking HT1

    Abstract: MT49H16M36 MICRON BGA PART MARKING MARKING SMD x9 RLDRAM
    Text: 576Mb: x9, x18, x36 2.5V Vext, 1.8V Vdd, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H64M9 – 64 Meg x 9 x 8 Banks MT49H32M18 – 32 Meg x 18 x 8 Banks MT49H16M36 – 16 Meg x 36 x 8 Banks Features Options • 533 MHz DDR operation 1.067 Gb/s/pin data rate


    Original     		PDF 576Mb: MT49H64M9 MT49H32M18 MT49H16M36 09005aef80a41b46/Source: 09005aef809f284b smd transistor marking HT1 MT49H16M36 MICRON BGA PART MARKING MARKING SMD x9 RLDRAM

    marking code a02 SMD Transistor

    Abstract: transistor SMD DK MT49H16M18 smd transistor marking d1c Diode A3X transistor smd marking BA RE marking BAX smd cod plastic BA5 marking code A22 SMD MARKING CODE
    Text: ADVANCE‡ 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288Mb CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization


    Original     		PDF 288Mb MT49H8M36 MT49H16M18 MT49H32M9 144-Ball 288Mb MT49H8M36 marking code a02 SMD Transistor transistor SMD DK MT49H16M18 smd transistor marking d1c Diode A3X transistor smd marking BA RE marking BAX smd cod plastic BA5 marking code A22 SMD MARKING CODE

    MT49H16M18C

    Abstract: No abstract text available
    Text: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H16M18C – 16 Meg x 18 x 8 banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate • 38.4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency) • Organization


    Original     		PDF 288Mb: MT49H16M18C 09005aef80a41b59/Source: 09005aef811ba111 2003Micron MT49H16M18C

    smd code marking x18

    Abstract: MT49H16M36
    Text: 576Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM 2 Features CIO RLDRAM 2 MT49H64M9 – 64 Meg x 9 x 8 Banks MT49H32M18 – 32 Meg x 18 x 8 Banks MT49H16M36 – 16 Meg x 36 x 8 Banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate


    Original     		PDF 576Mb: MT49H64M9 MT49H32M18 MT49H16M36 09005aef80a41b46/Source: 09005aef809f284b smd code marking x18 MT49H16M36