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    MT3S113 Price and Stock

    Toshiba America Electronic Components MT3S113TU,LF

    RF TRANS NPN 5.3V 11.2GHZ UFM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MT3S113TU,LF Cut Tape 2,502 1
    • 1 $0.72
    • 10 $0.549
    • 100 $0.4229
    • 1000 $0.33669
    • 10000 $0.33669
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    MT3S113TU,LF Digi-Reel 2,502 1
    • 1 $0.72
    • 10 $0.549
    • 100 $0.4229
    • 1000 $0.33669
    • 10000 $0.33669
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    MT3S113TU,LF Reel 3,000
    • 1 -
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    • 10000 $0.30662
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    Mouser Electronics MT3S113TU,LF 2,449
    • 1 $0.71
    • 10 $0.492
    • 100 $0.417
    • 1000 $0.321
    • 10000 $0.252
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    Toshiba America Electronic Components MT3S113(TE85L,F)

    RF TRANS NPN 5.3V 12.5GHZ SMINI
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MT3S113(TE85L,F) Digi-Reel 1,617 1
    • 1 $0.78
    • 10 $0.594
    • 100 $0.4578
    • 1000 $0.36506
    • 10000 $0.36506
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    MT3S113(TE85L,F) Cut Tape 1,617 1
    • 1 $0.78
    • 10 $0.594
    • 100 $0.4578
    • 1000 $0.36506
    • 10000 $0.36506
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    MT3S113(TE85L,F) Reel 3,000
    • 1 -
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    • 1000 -
    • 10000 $0.33275
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    Toshiba America Electronic Components MT3S113P(TE12L,F)

    RF TRANS NPN 5.3V 7.7GHZ PW-MINI
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MT3S113P(TE12L,F) Cut Tape 4 1
    • 1 $1.06
    • 10 $0.804
    • 100 $0.6226
    • 1000 $0.53134
    • 10000 $0.53134
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    MT3S113P(TE12L,F) Digi-Reel 4 1
    • 1 $1.06
    • 10 $0.804
    • 100 $0.6226
    • 1000 $0.53134
    • 10000 $0.53134
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    MT3S113P(TE12L,F) Reel 1,000
    • 1 -
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    • 1000 $0.49951
    • 10000 $0.41926
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    Toshiba America Electronic Components MT3S113TULF

    Trans RF BJT NPN 5.3V 0.1A 3-Pin UFM - Tape and Reel (Alt: MT3S113TU,LF)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas MT3S113TULF Reel 12 Weeks 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.27267
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    Toshiba America Electronic Components MT3S113(TE85LF)

    Trans RF BJT NPN 5.3V 0.1A 3-Pin SC-59 Emboss T/R - Tape and Reel (Alt: MT3S113(TE85L,F))
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas MT3S113(TE85LF) Reel 3,000
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    Find more MT3S113 price and stock on Findchips.com

    MT3S113 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MT3S113 Toshiba Japanese - Transistors Original PDF
    MT3S113 Toshiba Transistors Original PDF
    MT3S113P Toshiba Transistors Original PDF
    MT3S113P Toshiba Japanese - Transistors Original PDF
    MT3S113P(TE12L,F) Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - RF SIGE HETEROJUNCTION BIPOLAR N Original PDF
    MT3S113(TE85L,F) Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - RF SIGE HETEROJUNCTION BIPOLAR N Original PDF
    MT3S113TU Toshiba Japanese - Transistors Original PDF
    MT3S113TU Toshiba Transistors Original PDF
    MT3S113TU,LF Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - RF SIGE HETEROJUNCTION BIPOLAR N Original PDF

    MT3S113 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MT3S113

    Abstract: transistor 2F to-236 4360A
    Text: MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:|S21e|2=11.8dB(Typ.) (@ f=1GHz) Marking


    Original     		PDF MT3S113 O-236 SC-59 MT3S113 transistor 2F to-236 4360A

    Untitled

    Abstract: No abstract text available
    Text: MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:|S21e|2=11.8dB(Typ.) (@ f=1GHz) Marking


    Original     		PDF MT3S113 O-236 SC-59

    mt3s113p

    Abstract: No abstract text available
    Text: MT3S113P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:|S21e|2=10.5dB(Typ.) (@ f=1GHz) Marking


    Original     		PDF MT3S113P SC-62 mt3s113p

    Untitled

    Abstract: No abstract text available
    Text: MT3S113P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF = 1.15dB typ. (@ f=1GHz) • High Gain:|S21e| = 10.5dB (typ.) (@ f=1GHz)


    Original     		PDF MT3S113P SC-62

    Untitled

    Abstract: No abstract text available
    Text: MT3S113 東芝トランジスタ シリコンゲルマニウムNPNエピタキシャルプレーナ形 MT3S113 ○ VHF～UHF 帯 特 低雑音・低歪み増幅用 単位: mm 長 • 雑音特性が優れています。:NF=1.15dB 標準 (@ f=1GHz) • 高利得です。:|S21e|2=11.8dB(標準) (@ f=1GHz)


    Original     		PDF MT3S113 O-236

    MT3S113TU

    Abstract: No abstract text available
    Text: MT3S113TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113TU VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm 2.1±0.1 3 1.1. 2.2. 3.3. R7 1 1 3 2 0.7±0.05 Marking +0.1 0.3 -0.05 High Gain:|S21e|2=12.5dB Typ. (@ f=1GHz)


    Original     		PDF MT3S113TU MT3S113TU

    Untitled

    Abstract: No abstract text available
    Text: MT3S113P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:|S21e|2=10.5dB(Typ.) (@ f=1GHz) Marking


    Original     		PDF MT3S113P SC-62

    Untitled

    Abstract: No abstract text available
    Text: MT3S113TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113TU VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm 2.1±0.1 3 3 2 1.1. Base 2.2. Emitter 3.3. Collector R7 1 1 0.7±0.05 Marking +0.1 0.3 -0.05 High Gain:|S21e|2=12.5dB Typ. (@ f=1GHz)


    Original     		PDF MT3S113TU

    Untitled

    Abstract: No abstract text available
    Text: MT3S113P 東芝トランジスタ シリコンゲルマニウムNPNエピタキシャルプレーナ形 MT3S113P ○ VHF～UHF 帯 特 低雑音・低歪み増幅用 単位: mm 長 • 雑音特性が優れています。:NF=1.15dB 標準 (@ f=1GHz) • 高利得です。:|S21e|2=10.5dB(標準) (@ f=1GHz)


    Original     		PDF MT3S113P SC-62

    Untitled

    Abstract: No abstract text available
    Text: MT3S113TU 東芝トランジスタ シリコンゲルマニウムNPNエピタキシャルプレーナ形 MT3S113TU ○ VHF～UHF 帯 低雑音・低歪み増幅用 単位: mm 2.1±0.1 高利得です。:|S21e|2=12.5dB 標準 (@ f=1GHz) 3 2 0.7±0.05 現品表示


    Original     		PDF MT3S113TU

    Untitled

    Abstract: No abstract text available
    Text: MT3S113TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113TU VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm 2.1±0.1 2 3 1.1. 2.2. 3.3. R7 1 1 3 2 0.7±0.05 Marking +0.1 0.3 -0.05 High Gain:|S21e| = 12.5dB typ. (@ f=1GHz)


    Original     		PDF MT3S113TU

    Untitled

    Abstract: No abstract text available
    Text: MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB typ. (@ f=1GHz) • High Gain:|S21e| =11.8dB (typ.) (@ f=1GHz) 2


    Original     		PDF MT3S113 O-236 SC-59

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    TA4029CTC

    Abstract: TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X
    Text: 製品カタログ 2011-1 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 アプリケーション別推奨製品 .3~8


    Original     		PDF BCJ0003G BCJ0003F TA4029CTC TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X

    RFM70U12D

    Abstract: 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919
    Text: 東芝半導体製品総覧表 2009 年 7 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック


    Original     		PDF SCJ0004N 2SC2714 2SC2715 2SC2716 2SC3123 2SC5064 2SC5084 2SC5089 2SC5094 2SC5106 RFM70U12D 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919

    3sk catalog

    Abstract: TE85L Toshiba
    Text: Semiconductor Catalog 2012-1 Radio-Frequency Semiconductors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Recommended Products by Application . 3 to 7 1.1 Cell Phones 1.2 TV Tuners 1.3 Low-Power Radios FRS/GMRS


    Original     		PDF BCE0003H 3sk catalog TE85L Toshiba

    MT4S300T

    Abstract: TA4032FT MT3S111TU JAPANESE 2SC TRANSISTOR 2010 MT4S301T TA4029CTC TB7602CTC MT3S111P JAPANESE TRANSISTOR 2SC 2010 2sk3476
    Text: 2011-1 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Recommended Products by Application . 3 to 8 1.1 Cell Phones 1.2 TV Tuners 1.3 FRS/GMRS 1.4 Cordless Phones


    Original     		PDF BCE0003F MT4S300T TA4032FT MT3S111TU JAPANESE 2SC TRANSISTOR 2010 MT4S301T TA4029CTC TB7602CTC MT3S111P JAPANESE TRANSISTOR 2SC 2010 2sk3476

    MT4S300T

    Abstract: TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T
    Text: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Diodes Small-Signal MMICs Radio-Frequency Cell Packs Microwave Semiconductors


    Original     		PDF 2010/9SCE0004K 2SC1923 MT4S300T TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    2sc5066

    Abstract: MT3S111P MT3S111 toshiba transistors catalog TIM4450-4UL TGI1314-50L MT3S106 MT4S200T X-band low noise amplifiers toshiba 2SC3136
    Text: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Bipolar Power Transistors Radio-Frequency Diodes Radio-Frequency Power Amp ICs


    Original     		PDF SCE0004I 2SC380TM 2sc5066 MT3S111P MT3S111 toshiba transistors catalog TIM4450-4UL TGI1314-50L MT3S106 MT4S200T X-band low noise amplifiers toshiba 2SC3136

    GT45F122

    Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
    Text: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 GT45F122 TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124

    GT30J124

    Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004I SC-43) 2SC1815 GT30J124 smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram

    RFM70U12D

    Abstract: 2SC3136 RFM70 TGI8596-50 MT4S300T TA4029 TA4032FT TA4029TU TA4029CTC 2SK403
    Text: 東芝半導体製品総覧表 2010 年 1 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック


    Original     		PDF SCJ0004O 2SC2714 2SC2715 2SC2716 2SC3123 2SC5064 2SC5084 2SC5089 2SC5106 2SC5109 RFM70U12D 2SC3136 RFM70 TGI8596-50 MT4S300T TA4029 TA4032FT TA4029TU TA4029CTC 2SK403

    *45F122

    Abstract: GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322
    Text: 東芝半導体製品総覧表 2010 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 *45F122 GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322