PMV213SN
Abstract: PMV213
Text: PMV213SN µTrenchMOS standard level FET Rev. 02 — 19 February 2003 Product data M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMV213SN in SOT23.
|
Original
|
PDF
|
PMV213SN
M3D088
PMV213SN
MBB076
MSB003
771-PMV213SN215
PMV213
|
sot23 marking V2p
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BFQ67 NPN 8 GHz wideband transistor Product specification Supersedes data of September 1995 1998 Aug 27 NXP Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67 FEATURES DESCRIPTION
|
Original
|
PDF
|
M3D088
BFQ67
BFQ67
MSB003
R77/04/pp12
771-BFQ67-T/R
sot23 marking V2p
|
BST82
Abstract: SMD TRANSISTOR MARKING BR BST82 TRANSISTOR Q 817 smd 4814 transistor smd marking dk smd transistor marking A1 SMD TRANSISTOR MARKING DE MSB003 02p SMD TRANSISTOR
Text: DISCRETE SEMICONDUCTORS DATA SHEET BST82 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor
|
Original
|
PDF
|
BST82
SC13b
SCA54
137107/00/01/pp12
BST82
SMD TRANSISTOR MARKING BR
BST82 TRANSISTOR
Q 817
smd 4814
transistor smd marking dk
smd transistor marking A1
SMD TRANSISTOR MARKING DE
MSB003
02p SMD TRANSISTOR
|
BSH111
Abstract: MSB003
Text: BSH111 N-channel enhancement mode field-effect transistor Rev. 01 — 07 August 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSH111 in SOT23.
|
Original
|
PDF
|
BSH111
BSH111
MSB003
MSB003
|
MBB691
Abstract: MBB076 MAR 745 TRANSISTOR MBB692 MSB003 PMBF107
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBF107 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC13b 1998 Mar 06 Philips Semiconductors Product specification
|
Original
|
PDF
|
M3D088
PMBF107
SC13b
SCA54
135108/00/03/pp8
MBB691
MBB076
MAR 745 TRANSISTOR
MBB692
MSB003
PMBF107
|
MSB003
Abstract: PMV213SN
Text: PMV213SN µTrenchMOS standard level FET Rev. 02 — 19 February 2003 Product data M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMV213SN in SOT23.
|
Original
|
PDF
|
PMV213SN
M3D088
PMV213SN
MBB076
MSB003
|
Untitled
Abstract: No abstract text available
Text: BSH111 N-channel enhancement mode field-effect transistor Rev. 02 — 26 April 2002 Product data M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: BSH111 in SOT23.
|
Original
|
PDF
|
BSH111
M3D088
BSH111
MSB003
|
PMV117
Abstract: PMV117EN
Text: PMV117EN µTrenchMOS enhanced logic level FET Rev. 01 — 26 February 2003 Product data M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology Product availability: PMV117EN in SOT23.
|
Original
|
PDF
|
PMV117EN
M3D088
PMV117EN
MSB003
MBB076
PMV117
|
BFR540
Abstract: MSB003 BFR540 philips
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR540 NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR540 The transistor is encapsulated in a
|
Original
|
PDF
|
BFR540
BFR540
MSB003
BFR540 philips
|
Untitled
Abstract: No abstract text available
Text: PMV56XN µTrenchMOS extremely low level FET Rev. 01 — 26 February 2003 Product data M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMV56XN in SOT23. 2. Features
|
Original
|
PDF
|
PMV56XN
M3D088
PMV56XN
MSB003
MBB07
|
BFT25
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFT25 NPN 2 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification NPN 2 GHz wideband transistor DESCRIPTION BFT25 PINNING NPN transistor in a plastic SOT23 envelope. It is primarily intended for use in RF
|
Original
|
PDF
|
BFT25
MSB003
R77/02/pp10
BFT25
|
Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFS17 NPN 1 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 1 GHz wideband transistor BFS17 DESCRIPTION NPN transistor in a plastic SOT23 package. 3 handbook, halfpage APPLICATIONS
|
Original
|
PDF
|
BFS17
MSB003
R77/02/pp8
|
Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFR106 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFR106 PINNING NPN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is
|
Original
|
PDF
|
BFR106
MSB003
R77/02/pp10
|
Untitled
Abstract: No abstract text available
Text: BSH114 N-channel enhancement mode field effect transistor Rev. 01 — 09 November 2000 Product specification M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:
|
Original
|
PDF
|
BSH114
M3D088
BSH114
MSB003.
|
|
|
B12 IC marking code
Abstract: BF547 MSB003 Y22 SOT23 transistor y21
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF547 NPN 1 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547 FEATURES DESCRIPTION • Feedback capacitance typ. 1 pF
|
Original
|
PDF
|
BF547
MSB003
B12 IC marking code
BF547
MSB003
Y22 SOT23
transistor y21
|
mosfet K 2865
Abstract: BF1107 PHILIPS RF MOSFET depletion MARKING PHILIPS MOSFET MARKING
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BF1107 N-channel single gate MOSFET Product specification Supersedes data of 1998 Apr 07 File under Discrete Semiconductors, SC07 1998 Jun 22 Philips Semiconductors Product specification N-channel single gate MOSFET
|
Original
|
PDF
|
M3D088
BF1107
BF1107
SCA60
115102/00/02/pp8
mosfet K 2865
PHILIPS RF MOSFET depletion MARKING
PHILIPS MOSFET MARKING
|
Untitled
Abstract: No abstract text available
Text: BFR92A NPN 5 GHz wideband transistor Rev. 04 — 2 March 2009 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact
|
Original
|
PDF
|
BFR92A
BFR92A
|
BFS17
Abstract: philips tuners BFS17 E1 marking code ce SOT23 RF NPN POWER TRANSISTOR 2.5 GHZ RF POWER TRANSISTOR NPN TRANSISTOR SOT23 MSB003
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFS17 NPN 1 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BFS17 DESCRIPTION NPN transistor in a plastic SOT23 package.
|
Original
|
PDF
|
BFS17
MSB003
BFS17
philips tuners
BFS17 E1
marking code ce SOT23
RF NPN POWER TRANSISTOR 2.5 GHZ
RF POWER TRANSISTOR NPN
TRANSISTOR SOT23
MSB003
|
bfr505
Abstract: MSB003 mra723 transistor ZO 103 MA
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR505 NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFR505 PINNING • High power gain
|
Original
|
PDF
|
BFR505
BFR505
MSB003
mra723
transistor ZO 103 MA
|
MBB264
Abstract: BFR91A transistor datasheet transistor No bfr91a BFR91A transistor marking R2p BFR93A BFT93 MSB003 transistor BFR93A BFR91A transistor
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR93A NPN 6 GHz wideband transistor Product specification Supersedes data of September 1995 File under discrete semiconductors, SC14 1997 Oct 29 Philips Semiconductors Product specification NPN 6 GHz wideband transistor
|
Original
|
PDF
|
BFR93A
BFT93.
MSB003
SCA55
127127/00/02/pp12
MBB264
BFR91A transistor datasheet
transistor No bfr91a
BFR91A
transistor marking R2p
BFR93A
BFT93
MSB003
transistor BFR93A
BFR91A transistor
|
W1p TRANSISTOR
Abstract: transistor w1P w1p npn SOT23 W1P W1P 65 transistor transistor w1P 97 W1p 25 TRANSISTOR BFT92 W1P 06 "W1P"
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT92 PNP 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 November 1992 Philips Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFT92 PINNING PNP transistor in a plastic SOT23
|
Original
|
PDF
|
BFT92
W1p TRANSISTOR
transistor w1P
w1p npn
SOT23 W1P
W1P 65 transistor
transistor w1P 97
W1p 25 TRANSISTOR
BFT92
W1P 06
"W1P"
|
Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification N-channel single gate MOS-FETs BF1107; BF1107W FEATURES • Currentless RF switch. APPLICATIONS • Various RF switching applications such as: - Passive loop through for VCR tuner T o p view - Transceiver switching.
|
OCR Scan
|
PDF
|
BF1107;
BF1107W
MSB003
BF1107)
BF1107
BF1107W
OT323
OT323
|
mosfet K 2865
Abstract: BF1107 ic sc 6200 passive loopthrough
Text: DISC RETE S E M IC O N D U C TO R S ATA S&flEET BF1107 Silicon N-channel single gate MOSFET 1998 A pr 07 P relim inary specification File under Discrete S em iconductors, SC 07 Philips Semiconductors PHILIPS PHILIPS Philips S e m ico nd uctors Prelim inary specification
|
OCR Scan
|
PDF
|
BF1107
115102/00/01/pp8
mosfet K 2865
BF1107
ic sc 6200
passive loopthrough
|
bb412
Abstract: bb407 c 2026 y transistor
Text: Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF747 FEATURES DESCRIPTION • Stable oscillator operation Low cost NPN transistor in a plastic SOT23 package. • High current gain • Good thermal stability. APPLICATIONS n 3 • It is intended for VHF and UHF TV-tuner applications
|
OCR Scan
|
PDF
|
BF747
MSB003
bb412
bb407
c 2026 y transistor
|
